BUL57 BUL57FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ ■ ■ ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA TO-220FP FULLY ISOLATED PACKAGE (U.L. COMPLIANT) 1 2 3 3 1 TO-220 2 TO-220FP APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds. The devices are designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BUL57 V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature January 1999 Uni t BUL57FP 700 400 9 8 16 4 7 85 35 -65 to 150 150 V V V A A A A W o C o C 1/7 BUL57 / BUL57FP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max TO-220 TO-220F P 1.47 62.5 3.5 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ V BE(s at)∗ Parameter Test Cond ition s Collector Cut-off Current (V BE = 0) V CE = 700 V V CE = 700 V Collector Cut-off Current (I B = 0) V EC = 400 V Collector-Emitter Sustaining Voltage I C = 100 mA Emitter-Base Voltage (I C = 0) I E = 10 mA Collector-Emitter Saturation Voltage IC IC IC IC IC 2 3 4 5 8 A A A A A o L = 25 mH IB IB IB IB IB = = = = = DC Current Gain IC = 2 A IC = 4 A I C = 10 mA VCE = 5 V VCE = 5 V VCE = 5 V ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 3 A I B1 = 0.6 A L = 200 µH V CL = 250 V I B2 = -1.2 A ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 3 A I B1 = 0.6 A L = 200 µH V CL = 250 V I B2 = -1.2 A o Tj = 125 C ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 3 A V BE(of f) = -5 V V CL = 250 V ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 3 A V BE(of f) = -5V V CL = 250 V o T j = 125 C IB1 = 0.6 A R BB = 0 Ω L = 200 µH ts tf RESISTIVE LO AD Storage Time Fall Time V CC = 300 V I B1 = 0.4 A Tp = 30 µs IC = 2 A IB2 = -0.4 A Max. Un it 100 500 µA µA 250 µA 400 V 9 V 0.4 A 0.6 A 0.8 A 1 A 2 A IC = 2 A IC = 5 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Typ . Tj = 125 C Base-Emitt er Saturation Voltage h F E∗ 2/7 = = = = = Min. 0.65 0.75 1.2 2 V V V V V 1.2 1.6 V V 2 IB = 0.4 A IB = 1 A 15 6 8 40 1.8 60 2.6 110 µs ns 2.6 110 IB1 = 0.6 A R BB = 0 Ω L = 200 µH 1 54 1.6 100 µs ns µs ns 1.5 90 3 µs ns 4.2 350 ms ns BUL57 / BUL57FP Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL57 / BUL57FP Inductive Fall Time Inductive Storage Time Resistive Fall Time Resistive Load Storage Time Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit 1) Fast electronic switc h 2) Non-inductive Resistor 3) Fast recovery Rect ifier 4/7 BUL57 / BUL57FP TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/7 BUL57 / BUL57FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 6/7 L4 BUL57 / BUL57FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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