DMV1500SD ® DAMPER + MODULATION DIODE FOR VIDEO Table 1: Main Product Characteristics DAMPER MODUL. IF(AV) 6A 6A VRRM 1500 V 600 V trr (typ) 150 ns 60 ns VF (typ) 1.1 V 1.0 V DAMPER 1 MODULATION 2 3 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2000 VRMS 1 2 3 TO-220FPAB DMV1500SDFD Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation 3 1 2 TO-220FPAB FD6 DMV1500SDFD6 (optional) DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220FPAB package includes both the DAMPER diode and the MODULATION diode, thanks to a dedicated design. Assembled on automated line, it offers very low dispersion values on insulating and thermal performanes. October 2004 Table 2: Order Codes REV. 1 Part Number DMV1500SDFD DMV1500SDFD6 Marking DMV1500SD DMV1500SD 1/8 DMV1500SD Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM Repetitive peak reverse voltage IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Value Parameter Unit Damper Modul. 1500 600 V 50 50 A tp = 10ms sinusoidal -40 to +150 °C 150 °C Maximum operating junction temperature Table 4: Thermal resistances Symbol Rth(j-c) Parameter Value (max.) Unit 4 °C/W Junction to case thermal resistance Table 5: Static Electrical Characteristics Value Symbol Parameter Test conditions Tj = 25°C Typ. IR * VF ** Pulse test: Reverse leakage current Forward voltage drop Tj = 125°C Max. Typ. Max. Damper VR = 1500 V 100 100 1000 Modul. VR = 600 V 3 3 30 Damper IF = 6 A 1.2 1.75 1.1 1.5 Modul. IF = 6 A 1.15 1.4 1 1.25 Unit µA V * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations : 2 DAMPER: P = 1.2 x IF(AV) + 0.050 x IF (RMS) 2 MODULATION: P = 0.89 x IF(AV) + 0.055 x IF (RMS) Table 6: Recovery Characteristics Value Symbol trr 2/8 Parameter Reverse recovery time Test conditions IF = 100mA IR =100mA IRR = 10mA Tj = 25°C IF = 1A dIF/dt = -50 A/µs Tj = 25°C VR =30V Damper Modul. Typ. Max. Typ. Max. 1000 2000 250 400 Unit ns 150 250 60 85 DMV1500SD Table 7: Turn-On Switching Characteristics Symbol Parameter tfr Typ. Max. 350 500 Damper IF = 6 A dIF/dt = 80 A/µs VFR = 3 V Tj = 100°C Modul. IF = 6 A dIF/dt = 80 A/µs VFR = 2 V Tj = 100°C 70 125 Damper IF = 6 A dIF/dt = 80 A/µs Tj = 100°C 26 36 Modul. IF = 6 A dIF/dt = 80 A/µs Tj = 100°C Forward recovery time VFP Value Test conditions Peak forward voltage Figure 1: Power dissipation versus peak forward current (triangular waveform, δ=0.45) (damper diode) Unit ns V 5 7.5 Figure 2: Power dissipation versus peak forward current (triangular waveform, δ=0.45) (modulation diode) PF(AV)(W) PF(AV)(W) 2.0 1.6 1.8 1.4 1.6 1.2 1.4 1.0 1.2 0.8 1.0 0.8 0.6 0.6 0.4 0.4 0.2 0.2 IP(A) IP(A) 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 6.0 Figure 3: Average forward current versus ambient temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Figure 4: Forward voltage drop versus forward current (damper diode) IFM(A) IF(AV)(A) 15 7 14 Rth(j-a)=Rth(j-c) Tj=125°C (maximum values) 13 DAMPER diode 6 12 11 5 10 9 4 MODULATION diode Tj=125°C (typical values) 8 7 3 Tj=25°C (maximum values) 6 5 2 4 T 3 1 2 δ=tp/T 0 0 Tamb(°C) tp 1 VFM(V) 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 3/8 DMV1500SD Figure 5: Forward voltage drop versus forward current (modulation diode) Figure 6: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) IFM(A) 1.0 10 9 0.9 Tj=125°C (maximum values) 8 0.8 7 0.7 6 0.6 MODULATION diode DAMPER diode Tj=125°C (typical values) 0.5 5 Tj=25°C (maximum values) 4 0.4 3 0.3 2 0.2 1 0.1 VFM(V) 0 tp(s) Single pulse 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Figure 7: Reverse recovery charges versus dI F/dt (damper diode) 1.E-03 1.E-01 1.E+00 1.E+01 1.E+02 Figure 8: Reverse recovery charges versus dIF/ dt (modulation diode) Qrr(nC) Qrr(µC) 300 4.0 IF=IP Tj=125°C IF=IP Tj=125°C 3.5 1.E-02 250 3.0 200 2.5 150 2.0 1.5 100 1.0 50 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0.0 0 0.1 1.0 10.0 100.0 Figure 9: Peak reverse recovery current versus dIF/dt (damper diode) 0.1 1.0 10.0 100.0 Figure 10: Peak reverse recovery current versus dIF/dt (modulation diode) IRM(A) IRM(A) 4.5 4.0 IF=IP Tj=125°C 4.0 IF=IP Tj=125°C 3.5 3.5 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0.0 0.0 0.1 4/8 1.0 10.0 0.1 1.0 10.0 100.0 DMV1500SD Figure 11: Transient peak forward voltage versus dIF/dt (damper diode, typical values) Figure 12: Transient peak forward voltage versus dIF/dt (modulation diode, typical values) VFP(V) VFP(V) 50 10 IF=IP Tj=100°C 45 IF=IP Tj=100°C 9 40 8 35 7 30 6 25 5 20 4 15 3 10 2 5 1 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 20 40 60 80 100 120 140 160 180 200 Figure 13: Forward recovery time versus dIF/dt (damper diode, typical values) 0 20 40 60 80 100 120 140 160 180 200 Figure 14: Forward recovery time versus dIF/dt (modulation diode, typical values) tfr(ns) tfr(ns) 800 140 IF=IP Tj=100°C VFR=3V 700 IF=IP Tj=100°C VFR=2V 120 600 100 500 80 400 60 300 40 200 20 100 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 20 40 60 80 100 120 140 160 180 200 Figure 15: Relative variation of dynamic parameters versus junction temperature 0 20 40 60 80 100 120 140 160 180 200 Figure 16: Junction capacitance versus reverse voltage applied (typical values) IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125°C] C(pF) 1.2 100 F=1MHz VOSC=30mVRMS Tj=25°C 1.0 MODULATION diode 0.8 VFP 0.6 10 DAMPER diode IRM 0.4 QRR 0.2 Tj(°C) VR(V) 1 0.0 25 50 75 100 125 1 10 100 1000 5/8 DMV1500SD Figure 17: TO-220FPAB FD6 Option Package Mechanical Data DIMENSIONS REF. A A B H Dia L6 L2 L7 L4 D L3 M1 F E Max. Min. Max. 4.4 4.9 0.173 0.192 B 2.5 2.9 0.098 0.114 D 2.45 2.75 0.096 0.108 E 0.4 0.7 0.016 0.028 F 0.6 1 0.024 0.039 G 4.95 5.2 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.7 0.394 0.421 L2 12.7 12.8 0.500 0.504 4.2 0.150 0.165 L6 2.8 3.2 0.110 0.126 L7 9 9.9 0.354 0.390 3.75 Typ. 7 R Dia. Figure 18: TO-220FPAB FD6 PCB layout (typical, in millimeters) 2.54 7.5 2.2 7.9 1.0 6/8 0.189 Typ. 3.8 M2 G 4.8 Typ. L4 M1 M2 Inches Min. L3 L5 G1 Millimeters 8 1 Typ. 2.9 0.148 Typ. 0.276 0.315 0.039 Typ. 3.5 0.114 0.138 DMV1500SD Figure 19: TO-220FPAB Package Mechanical Data REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.192 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.7 0.016 0.027 0.6 1 0.024 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.7 0.393 0.421 16 Typ. 0.630 Typ. 28.6 30.6 1.126 1.205 9.8 10.7 0.385 0.421 15.8 16.4 0.622 0.646 9 9.9 0.354 0.390 2.9 3.5 0.114 0.138 Table 8: Ordering Information Part Number Marking Package Weight Base qty DMV1500SDFD DMV1500SDFD6 DMV1500SD DMV1500SD TO-220FPAB TO-220FPAB FD6 2.4 g 2.4 g 50 45 Delivery mode Tube Tube Table 9: Revision History Date Revision 25-Oct-2004 1 Description of Changes First issue 7/8 DMV1500SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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