DMV series ® DAMPER + MODULATION DIODE FOR VIDEO MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF(AV) 3A&6A 5A&6A VRRM 600 V 1500 V trr 50 ns 135 ns VF (max) 1.5 V 1.35 V DAMPER 1 MODULATION 2 3 FEATURES AND BENEFITS 1 FULL KIT IN ONE PACKAGE HIGH BREAKDOWN VOLTAGE CAPABILITY VERY FAST RECOVERY DIODE SPECIFIED TURN ON SWITCHING CHARACTERISTICS LOW STATIC AND PEAK FORWARD VOLTAGE DROP FOR LOW DISSIPATION INSULATED VERSION: Insulated voltage = 2500 VRMS Capacitance = 7 pF PLANAR TECHNOLOGY ALLOWING HIGH QUALITY AND BEST ELECTRICAL CHARACTERISTICS OUTSTANDING PERFORMANCE OF WELL PROVEN DTV AS DAMPER AND TURBOSWITCHTM AS MODULATION 2 3 Insulated TO-220AB (Bending option F5 available) DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220AB package includes both the DAMPER diode and the MODULATION diode. Assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer. ABSOLUTE RATINGS (limiting values, per diode) Symbol Value Parameter Unit MODUL DAMPER VRRM Repetitive peak reverse voltage IFSM Surge non repetitive forward current Tstg Tj tp = 10 ms sinusoidal Storage temperature range Maximum operating junction temperature 600 1500 V DMV16 50 50 A DMV32 60 75 DMV56 60 80 - 40 to + 150 °C 150 TURBOSWITCH is a trademark of STMicroelectronics August 1999 - Ed: 2A 1/9 DMV series THERMAL RESISTANCES Symbol Value Parameter DMV16 DMV32 DMV56 Rth(j-c) Damper junction to case 5.3 4.8 3.6 Rth(j-c) Modulation junction to case 6.5 5.3 5.3 Rth(c) Coupling 0.2 0.2 0.2 Rth(j-c) Total as per full IF(AV) maximum ratings 6.0 5.1 4.5 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES Value Symbol Parameter Test conditions Tj = 25°C Tj = 125°C Unit Typ. Max. Typ. Max. VF * IR ** Pulse test : Forward voltage drop Reverse leakage current IF = 5 A DMV16 1.6 1.0 1.5 IF = 6 A DMV32 1.5 1.1 1.35 IF = 6 A DMV56 1.8 1.1 1.5 VR = VRRM DMV16 60 100 500 DMV32 100 100 1000 DMV56 100 100 1000 V µA * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses of the DAMPER diode use the following equations : DMV16: P = 1.14 x IF(AV) + 0.072 x IF2(RMS) DMV32: P = 1.069 x IF(AV) + 0.047 x IF2(RMS) DMV56: P = 1.15 x IF(AV) + 0.059 x IF2(RMS) STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE Value Symbol Parameter Test conditions Tj = 25°C Typ. VF * IR ** Pulse test : Forward voltage drop Reverse leakage current Tj = 125°C Max. Typ. Max. IF = 3A DMV16 1.4 1 1.3 IF = 5A DMV32 1.75 1.2 1.5 IF = 5A DMV56 1.75 1.2 1.5 VR = 480V DMV16 20 150 500 DMV32 DMV56 100 100 600 600 2000 2000 Unit V µA * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses of the MODULATION diode use the following equations : DMV16: P = 1.06 x IF(AV) + 0.08x IF2(RMS) DMV32: P = 1.15 x IF(AV) + 0.07 x IF2(RMS) DMV56: P = 1.15 x IF(AV) + 0.07 x IF2(RMS) 2/9 ® DMV series RECOVERY CHARACTERISTICS OF THE DAMPER DIODE Symbol Parameter trr Reverse recovery time trr Reverse recovery time Value Test conditions IF = 100mA IR = 100mA IRR = 10mA Tj = 25°C IF = 1A dIF/dt = -50A/µs VR = 30V Tj = 25°C Typ. Max. DMV16 1500 DMV32 850 DMV56 DMV16 750 200 300 DMV32 130 175 DMV56 110 135 Unit ns ns RECOVERY CHARACTERISTICS OF THE MODULATION DIODE Symbol Parameter trr Reverse recovery time trr Reverse recovery time Value Test conditions IF = 100mA IR = 100mA IRR = 10mA Tj = 25°C IF = 1A dIF/dt = -50A/µs VR = 30V Tj = 25°C Typ. Max. DMV16 210 650 DMV32 110 350 DMV56 110 350 DMV16 95 DMV32 50 DMV56 50 Unit ns ns TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE Symbol Parameter tfr Forward recovery time VFP Peak forward voltage Value Test conditions IF = 6A dIF/dt = 80A/µs VFR = 3V Tj = 100°C IF = 6A dIF/dt = 80A/µs Tj = 100°C Typ. Max. DMV16 350 DMV32 DMV56 570 350 DMV16 25 34 DMV32 21 28 DMV56 19 26 Unit ns V TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE Symbol Parameter tfr Forward recovery time IF = 3A dIF/dt = 80A/µs VFR = 3V Tj = 100°C IF = 5A dIF/dt = 80A/µs VFR = 3V VFP Peak forward voltage IF = 3A dIF/dt = 80A/µs IF = 5A dIF/dt = 80A/µs ® Value Test conditions Tj = 100°C Typ. Max. DMV16 500 DMV32 300 DMV56 300 DMV16 8 DMV32 10 DMV56 10 Unit ns V 3/9 DMV series ORDERING INFORMATION DMVxx / F5 LEAD BENDING (OPTION) DAMPER AND MODULATION DIODES FOR VIDEO Fig. 1-1: Power dissipation versus peak forward current (triangular waveform, δ=0.45) (damper diode.) Fig. 1-2: Power dissipation versus peak forward current (triangular waveform, δ=0.45) (modulation diode) PF(av)(W) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 PF(av)(W) DMV16 DMV56 DMV32 Ip(A) 0 1 2 3 4 5 6 Fig. 2-1: Average forward current versus ambient temperature (damper diode). 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 DMV32/DMV56 DMV16 Ip(A) 0 1 2 3 4 5 6 Fig. 2-2: Average forward current versus ambient temperature (modulation diode). IF(av)(A) IF(av)(A) 7 6 DMV32 6 DMV32/DMV56 5 DMV16 5 DMV56 4 4 DMV16 3 3 2 Rth(j-a)=Rth(j-c) T 1 1 0 2 Rth(j-a)=Rth(j-c) T δ=tp/T 0 4/9 Tamb(°C) tp 25 50 75 100 125 150 0 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 ® DMV series Fig. 3-1: Forward voltage drop versus forward current (damper diode) DMV16. Fig. 3-2: Forward voltage drop versus forward current (damper diode)DMV32. IFM(A) IFM(A) 50.0 20.0 Typical Tj=125°C 10.0 Typical Tj=125°C 10.0 Maximum Tj=125°C Maximum Tj=25°C Maximum Tj=125°C 1.0 Maximum Tj=25°C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Fig. 3-3: Forward voltage drop versus forward current (damper diode)DMV56. Fig. 3-4: Forward voltage drop versus forward current (modulation diode)DMV16. IFM(A) 20.0 50.0 IFM(A) 10.0 Typical Tj=125°C Typical Tj=125°C 10.0 Maximum Tj=125°C Maximum Tj=125°C Maximum Tj=25°C 1.0 1.0 Maximum Tj=25°C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 3-5: Forward voltage drop versus forward current (modulation diode)DMV32 and DMV56. Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. 20.0 IFM(A) K=[Zth(j-c)/Rth(j-c)] 1.0 10.0 δ = 0.5 Typical Tj=125°C 0.5 δ = 0.2 Maximum Tj=125°C 1.0 δ = 0.1 Maximum Tj=25°C 0.2 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ® T Single pulse tp(s) 0.1 1E-3 1E-2 δ=tp/T 1E-1 tp 1E+0 5/9 DMV series Fig. 5-1: Non repetitive surge peak forward current versus overload duration (damper diode). IM(A) 45 40 35 30 25 20 15 10 IM 5 0 1E-3 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (modulation diode). IM(A) 40 Tc=100°C Tc=100°C 35 30 DMV56 25 DMV32 DMV32/DMV56 20 15 DMV16 10 t 1E-2 IM 5 t(s) δ=0.5 DMV16 1E-1 1E+0 0 1E-3 t t(s) δ=0.5 1E-2 1E-1 1E+0 Fig. 6-1: Reverse recovery charges versus dIF/dt (damper diode). Fig. 6-2: Reverse recovery charges versus dIF/dt (modulation diode). Qrr(µC) 2.4 2.2 90%IF=IF(av) confidence Tj=125°C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 0.2 Qrr(nC) 500 IF=IF(av) 90% confidence 450 Tj=125°C 400 350 300 250 200 150 100 50 0 0.1 DMV16 DMV32 DMV56 dIF/dt(A/µs) 0.5 1.0 2.0 5.0 Fig. 7-1: Reverse recovery current versus dIF/dt (damper diode). IRM(A) 3.0 2.5 IF=IF(av) 90% confidence Tj=125°C DMV16 2.0 DMV32 1.5 DMV56 1.0 0.5 0.0 0.1 6/9 dIF/dt(A/µs) 0.2 0.5 1.0 2.0 5.0 DMV16 DMV32/DMV56 1.0 dIF/dt(A/µs) 10.0 50.0 Fig. 7-2: Reverse recovery current versus dIF/dt (modulation diode). IRM(A) 10 IF=IF(av) 9 90% confidence Tj=125°C 8 7 6 5 4 3 2 1 0 0.1 DMV16 DMV32/DMV56 1.0 dIF/dt(A/µs) 10.0 100.0 ® DMV series Fig. 8-1: Transient peak forward voltage versus dIF/dt (damper diode). Fig. 8-2: Transient peak forward voltage versus dIF/dt (modulation diode). VFP(V) VFP(V) 50 45 40 35 30 25 20 15 10 5 0 IF=IF(av) 90% confidence Tj=125°C DMV16 DMV32 DMV56 0 20 dIF/dt(A/µs) 80 100 40 60 Fig. 9-1: Forward recovery time (damper diode). 120 140 versus dIF/dt 20 18 16 14 12 10 8 6 4 2 0 IF=IF(av) 90% confidence Tj=125°C DMV16 0 20 40 60 dIF/dt(A/µs) 100 120 140 160 180 200 80 Fig. 9-2: Forward recovery time versus dIF/dt (modulation diode). tfr(ns) tfr(ns) 700 650 600 550 500 450 400 350 300 250 200 DMV32/DMV56 400 IF=IF(av) 90% confidence Tj=125°C Vfr=3V IF=IF(av) 90% confidence Tj=125°C Vfr=1.5V 350 300 250 DMV16/DMV32/DMV56 200 DMV16 150 DMV32/DMV56 100 50 dIF/dt(A/µs) 0 20 40 60 80 100 120 140 Fig. 10: Dynamic parameters versus junction temperature (damper & modulation diodes). 0 dIF/dt(A/µs) 0 20 40 60 80 100 120 140 160 180 200 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) VFP,IRM,Qrr[Tj] / VFP,IRM,Qrr[Tj=125°C] 100 1.2 DMV16 1.0 DMV32 DMV56 0.8 IRM 0.6 0.4 VFP 0.2 Qrr 10 DMV16 0 20 ® DMV32/DMV56 Modulation diodes Tj(°C) 0.0 Tj=25°C F=1MHz Damper diodes 40 60 80 VR(V) 100 120 140 1 1 10 100 200 7/9 DMV series PACKAGE MECHANICAL DATA TO-220AB F5 OPTION DIMENSIONS REF. B Millimeters Inches Min. Max. Min. Max. A 15.20 15.90 0.598 0.625 a1 24.16 26.90 0.951 1.059 C b2 L F ØI A l4 a1 c2 R2 a3 l3 R1 l2 c2 b1 c1 M1 e a3 1.65 2.41 0.064 0.094 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 C 1.23 4.40 1.32 4.60 0.048 0.173 0.051 0.181 c1 c2 0.49 2.40 0.70 2.72 0.019 0.094 0.027 0.107 e F 2.40 6.20 2.70 6.60 0.094 0.244 0.106 0.259 I 3.75 3.85 0.147 0.151 L 2.65 2.95 0.104 0.116 I2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 l4 15.80 16.80 0.622 0.661 16.40 typ. M1 PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT 2.92 3.30 0.645 typ. 0.114 0.129 R1 1.40 typ. 0.055 typ. R2 1.40 typ. 0.055 typ. cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. 3.1mm 1mm 2.2mm 2.54mm 8/9 ® DMV series PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. B C b2 A L F I A Millimeters Inches Min. Typ. Max. Min. Typ. Max. 15.20 15.90 0.598 0.625 a1 a2 3.75 0.147 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L l2 2.65 1.14 2.95 0.104 1.70 0.044 0.116 0.066 l3 M 1.14 1.70 0.044 0.066 l4 c2 a1 l3 l2 a2 b1 M c1 e 2.60 0.102 cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Type Marking Package Weight Base qty Delivery mode DMV16 DMV16/F5 DMV16 TO-220AB 2.2 g. 50 Tube DMV32 DMV32/F5 DMV32 TO-220AB 2.2 g. 50 Tube DMV56 DMV56/F5 DMV56 TO-220AB 2.2 g. 50 Tube Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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