STTH60L06C ® TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF(AV) Up to 2 x 40 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 1.0 V trr (max) 65 ns K FEATURES AND BENEFITS ■ ■ ■ ■ A1 Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses K A2 TO-247 STTH60L06CW DESCRIPTION The STTH60L06, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Table 2: Order Codes Part Number STTH60L06CW Marking STTH60L06CW Table 3: Absolute Ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) Average forward current δ = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Tc = 125°C Per diode Tc = 110°C Per device Tc = 100°C Per diode Tc = 80°C Per device tp = 10ms sinusoidal Maximum operating junction temperature September 2004 REV. 1 Value 600 Unit V 60 A 30 60 40 80 210 A A -65 to + 175 °C 175 °C 1/6 STTH60L06C Table 4: Thermal Resistance Symbol Rth(j-c) Rth(c) Parameter Junction to case Value (max). Unit Per diode 1.05 °C/W Total 0.68 Coupling 0.3 °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol IR * Parameter Test conditions Reverse leakage current Tj = 25°C Min. VR = VRRM Tj = 150°C VF ** Forward voltage drop Tj = 25°C 80 IF = 30A 1.0 IF =60A Unit 25 µA 800 V 1.25 1.78 Tj = 150°C Pulse test: Max. 1.55 Tj = 150°C Tj = 25°C Typ 1.24 1.55 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 2 To evaluate the conduction losses use the following equation: P = 0.95 x IF(AV) + 0.010 I F (RMS) Table 6: Dynamic Characteristics (per diode) Symbol Parameter trr Reverse recovery time Tj = 25°C IRM Reverse recovery current Tj = 125°C IF = 30A VR = 400V dIF/dt = 100 A/µs tfr Forward recovery time Tj = 25°C IF = 30A dIF/dt = 100 A/µs VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25°C IF = 30A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 2/6 Test conditions Min. Typ Max. Unit IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = 50 A/µs VR =30V 65 ns 65 90 11.5 16 A 500 ns 2.5 V STTH60L06C Figure 1: Conduction losses versus average forward current (per diode) Figure 2: Forward voltage drop versus forward current (per diode) IFM(A) P(W) 100 80 δ = 0.1 70 δ = 0.2 δ = 0.5 90 δ = 0.05 Tj=150°C (maximum values) 80 60 70 δ=1 50 Tj=150°C (typical values) 60 Tj=25°C (maximum values) 50 40 40 30 30 T 20 20 10 δ=tp/T IF(AV)(A) 10 tp 0 VFM(V) 0 0 10 20 30 40 50 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) Zth(j-c)/Rth(j-c) 1.0 45 0.9 40 0.8 35 VR=400V Tj=125°C IF=2 x IF(AV) IF=IF(AV) 0.7 30 IF=0.5 x IF(AV) 0.6 25 0.5 20 0.4 15 0.3 T 10 0.2 Single pulse 0.1 δ=tp/T tp(s) 5 tp dIF/dt(A/µs) 0.0 0 1.E-03 1.E-02 1.E-01 1.E+00 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) 0 50 100 150 200 250 300 350 400 450 500 Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) trr(ns) Qrr(nC) 3500 800 VR=400V Tj=125°C 700 VR=400V Tj=125°C 3000 600 IF=2 x IF(AV) 2500 IF=2 x IF(AV) 500 IF=IF(AV) 2000 400 IF=IF(AV) IF=0.5 x IF(AV) IF=0.5 x IF(AV) 1500 300 1000 200 500 100 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 3/6 STTH60L06C Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) Figure 8: Relative variations of dynamic parameters versus junction temperature S factor 1.6 1.4 IF< 2 x IF(AV) VR=400V Tj=125°C 1.4 S factor 1.2 1.2 1.0 1.0 0.8 QRR 0.8 0.6 0.6 IRM 0.4 0.4 IF=IF(AV) VR=400V Reference: Tj=125°C trr 0.2 0.2 Tj(°C) dIF/dt(A/µs) 0.0 0.0 0 50 100 150 200 250 300 350 400 450 500 Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) 25 50 75 100 125 Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) tfr(ns) VFP(V) 450 10 IF=IF(AV) Tj=125°C 9 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 400 8 350 7 300 6 250 5 200 4 150 3 100 2 1 50 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 4/6 10 100 1000 0 100 200 300 400 500 STTH60L06C Figure 12: TO-247 Package Mechanical Data DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 REF. V Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 D L3 F4 F(x3) M G = = E Table 7: Ordering Information Ordering type STTH60L06CW ■ ■ ■ ■ Marking STTH60L06CW Package TO-247 Weight 4.46 g Base qty 50 Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N. Table 8: Revision History Date 07-Sep-2004 Revision 1 Description of Changes First issue 5/6 STTH60L06C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6