STMICROELECTRONICS EMIF10

EMIF10-COM01C2
IPAD™
EMI Filter including ESD protection
Main product characteristics
EMI filtering and ESD protection for:
■
Computers and printers
■
Communication systems
■
Mobile phones
Description
The EMIF10-COM01C2 is a highly integrated
device designed to suppress EMI / RFI noise in all
systems subjected to electromagnetic
interferences. The EMIF10 Flip-Chip packaging
means the package size is equal to the die size.
Additionally, this filter includes an ESD protection
circuitry which prevents damage to the application
when subjected to ESD surges up to 15 kV.
Lead free coated Flip-Chip
(25 Bumps)
Order code
Part Number
Marking
EMIF10-COM01C2
FE
Figure 1.
Benefits
■
EMI symmetrical (I/O) low-pass filter
■
Coating resin on flat side
Pin configuration (Bump side)
5
4
3
2
1
I5
I4
I3
I2
I1
A
I10
I9
I8
I7
I6
B
GND
GND
GND
GND
GND
C
010
09
08
07
06
D
05
04
03
02
01
E
mm2
■
Very low PCB space consuming: < 6
■
Very thin package: 0.65 mm
■
High efficiency in ESD suppression on both
input and output pins
■
High reliability offered by monolithic integration
■
Lead free package
Complies with the following standards:
Figure 2.
Basic cell configuration
Low-pass Filter
IEC 61000-4-2 level 4
Input
15 kV (air discharge)
Output
8 kV (contact discharge)
RI/O = 200Ω
Cline = 45 pF
TM: IPAD is a trademark of STMicroelctronics
April 2006
Rev4
1/7
www.st.com
7
Characteristics
1
EMIF10-COM01C2
Characteristics
Table 1.
Symbol
VPP
Tj
Absolute Ratings (Tamb = 25 °C)
Parameter and test conditions
Value
Unit
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
15
8
kV
Junction temperature
125
°C
Top
Operating temperature range
- 40 to + 85
°C
Tstg
Storage temperature range
- 55 to + 150
°C
Table 2.
Electrical Characteristics (Tamb = 25 °C)
Symbol
Parameter
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM
Stand-off voltage
VCL
Clamping voltage
Rd
Dynamic impedance
IPP
Peak pulse current
RI/O
Resistance between Input and Output
Cline
Input capacitance per line
Symbol
VCL VBR VRM
Test conditions
VBR
IR = 1 mA
IRM
VRM = 3 V per line
Rd
IPP = 10 A, tp = 2.5 µs
RI/O
Cline
tLH
2/7
I
slope : 1 / R d
Vinput = 2.8 V
Rload = 100 kΩ
IPP
Min.
Typ.
Max.
Unit
6
8
10
V
500
nA
Ω
1
180
At 0 V bias
V
IRM
IR
200
220
Ω
45
50
pF
25
ns
EMIF10-COM01C2
Figure 3.
Characteristics
Figure 4.
S21(db) attenuation
measurement(1)
Analog crosstalk
0.00
0.00
dB
dB
-10.00
-20.00
-10.00
-30.00
-20.00
-40.00
-50.00
-30.00
-60.00
-70.00
-40.00
-80.00
-90.00
-50.00
100.0k
1.0M
10.0M
100.0M
f/Hz
-100.00
1.0G
100.0k
1.0M
10.0M
Xtalk 1/2 448
f/Hz
100.0M
1.0G
Xtalk 1/2 342
1. Spikes at high frequencies are induced by the PCB layout
Figure 5.
ESD response to IEC 61000-4-2
Figure 6.
(+15 kV air discharge) on one input
(Vin) and on one output (Vout)
ESD response to IEC 61000-4-2
(-15 kV air discharge) on one input
(Vin) and on one output (Vout)
V(in1)
V(in1)
V(out1)
V(out1)
Figure 7.
Rise time measurement
EMIF10-COM01C2
In
Out
Vout
Square signal
Generator Vc = 2.8V
Vin
100k
Vout
Vin
3/7
Characteristics
EMIF10-COM01C2
Figure 8.
Capacitance versus reverse applied
voltage
C(pF)
50
F=1MHz
Vosc=30mV
40
30
20
10
0
1
2
3
4
5
VR(V)
Figure 9.
Aplac model
200R
out
in
MODEL = demif10
MODEL = demif10
Demif10 model
BV = 7
IBV = 1m
CJO = 25p
M = 0.3333
RS = 1
VJ = 0.6
TT = 100n
sub
1.1
PCB grounding recommendations
In order to ensure a good efficiency in terms of ESD protection and filtering behavior, we
recommend to implement microvias (100 µm dia.) between the GND bumps and the GND
layer. GND bumps can be connected together in PCB layer 1, and in addition, if possible,
use through hole vias (200 µm dia.) in both sides of filter to improve contact to GND (layer).
This layout will minimize the distance to the ground and thus parasitic inductances. In
addition, we recommend to have GND plane wherever possible.
4/7
EMIF10-COM01C2
2
Ordering Information Scheme
Ordering Information Scheme
EMIF
yy
-
xxx zz
Cx
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
C = coated flip-chip
x = 1: 500µm, Bump = 315µm
= 2: Leadfree Pitch = 500µm, Bump = 315µm
Package information
Figure 10. Flip-Chip package dimensions
500 µm ± 50
695 µm ± 70
315 µm ± 50
2.42 mm ± 50 µm
500 µm ± 50
3
2.42 mm ± 50 µm
Figure 11. Foot print recommendations Figure 12. Marking
Copper pad Diameter:
250 µm recommended, 300 µm max
Dot, ST logo
xx = marking
z = manufacturing location
yww = datecode
(y = year
ww = week)
E
Solder stencil opening: 330 µm
Solder mask opening recommendation:
340 µm min for 300 µm copper pad diameter
x x z
y ww
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Ordering information
EMIF10-COM01C2
Figure 13. Flip-Chip tape and reel specification
Dot identifying Pin A1 location
1.75 +/- 0.1
Ø 1.5 +/- 0.1
4 +/- 0.1
3.5 +/- 0.1
xxz
yww
ST E
ST E
xxz
yww
xxz
yww
ST E
8 +/- 0.3
0.73 +/- 0.05
4 +/- 0.1
User direction of unreeling
All dimensions in mm
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available
at: www.st.com.
Note:
More informations are available in the application notes:
AN1235: “Flip-Chip: Package description and recommendations for use”
AN1751: "EMI Filters: Recommendations and measurements"
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Ordering information
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
EMIF10-COM01C2
FE
Flip-Chip
8.3 mg
5000
Tape and reel
Revision history
Date
Revision
Description of Changes
12-Jul-2005
1
First issue.
12-Aug-2005
2
Lead free added in Benefits on page 1. ECOPACK
statement added on page 6.
27-Jan-2006
3
Improved graphics to show coating. Updated attenuation
measurement graphic (Figure 3). Weight corrected.
04-Apr-2006
4
Reformatted to current standard. Pin identification in
Figure 1 updated.
EMIF10-COM01C2
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