MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ ■ STM PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 3 APPLICATIONS ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 1 DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN MJD3055 PNP MJD2955 Uni t V CBO Collector-Base Voltage (IE = 0) 60 V V CEO Collector-Emitter Voltage (I B = 0) 70 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 10 A IB Base Current 6 A 20 W P t ot June 1998 o Total Dissipation at T c = 25 C 1/6 MJD2955 / MJD3055 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 6.25 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Max. Un it I CEX Collector Cut-off Current V CB = 70 V V BE = -1.5V V CB = 70 V V BE = -1.5V Tj = 150 o C 0.2 2 µA µA I CBO Collector Cut-off Current (IE = 0) V CB = 70 V V CB = 70 V 0.2 2 µA µA I CEO Collector Cut-off Current (IB = 0) V CB = 30 V 50 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 0.5 mA V CEO(sus) Collector-Emitter Sustaining Voltage I C = 30 mA V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 4 A I C = 10 A IB = 0.4 A I B = 3.3 A V BE(on) ∗ Parameter Test Cond ition s T j = 150 o C Base-Emitter Voltage IC = 4 A V CE = 4 V DC Current G ain IC = 4 A I C = 10 A V CE = 4 V V CE = 4 V fT DC Current G ain I C = 0.5 A VCE = 10 V f = 500 KHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. 2/6 Typ . 60 h FE∗ Safe Operating Area Min. Derating Curves 20 5 2 V 1.1 8 V 1.8 V 100 MHz MJD2955 / MJD3055 DC Current Gain (NPN type) DC Current Gain (PNP type) DC Transconductance DC Transconductance (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) 3/6 MJD2955 / MJD3055 Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) Transition Frequency (NPN type) Transition Frequency (PNP type) 4/6 MJD2955 / MJD3055 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 5/6 MJD2955 / MJD3055 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 6/6