STMICROELECTRONICS MJD32B

MJD31B/31C
MJD32B/32C

COMPLEMENTARY SILICON POWER TRANSISTORS
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
ELECTRICALLY SIMILAR TO TIP31B/C AND
TIP32B/C
3
APPLICATIONS
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GENERAL PURPOSE SWITCHING AND
AMPLIFIER TRANSISTORS
1
DPAK
TO-252
(Suffix ”T4”)
DESCRIPTION
The MJD31B and MJD31C and the MJD32B and
MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
NPN
MJD31B
MJD31C
PNP
MJD32B
MJD32C
V CBO
Collector-Base Voltage (IE = 0)
80
100
V
V CEO
Collector-Emitter Voltage (IB = 0)
80
100
V
V EBO
Emitter-Base Voltage (IC = 0)
5
V
Collector Current
3
A
Collector Peak Current
5
A
Base Current
1
A
IC
I CM
IB
o
P t ot
Total Dissipation at Tc = 25 C
T stg
Storage T emperature
Tj
Max. O perating Junction Temperature
15
W
-65 to 150
o
C
150
o
C
For PNP types the values are intented negative.
May 1999
1/5
MJD31B/31C - MJD32B/32C
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
8.33
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Max.
Un it
I CES
Collector Cut-off
Current (V BE = 0)
V CE = Max Rating
20
µA
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 60 V
50
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
0.1
mA
Collector-Emitter
Sustaining Voltage
I C = 30 mA
for MJD31B/32B
for MJD31C/32C
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 3 A
IB = 375 mA
1.2
V
V BE(on) ∗
Base-Emitt er Voltage
IC = 3 A
V CE = 4 V
1.8
V
DC Current Gain
IC = 1 A
IC = 3 A
V CE = 4 V
V CE = 4 V
V CEO(sus)
h F E∗
h fe
Parameter
Dynamic Current G ain
Test Cond ition s
I C = 0.5 A
I C = 0.5 A
2/5
Typ .
80
100
V CE = 10 V
V CE = 10 V
25
10
f = 1 KHz
f = 1 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
Safe Operating Area
Min.
Derating Curves
20
3
V
V
50
MJD31B/31C - MJD32B/32C
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Collector-Base Capacitance (PNP type)
3/5
MJD31B/31C - MJD32B/32C
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
4/5
MJD31B/31C - MJD32B/32C
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