MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C 3 APPLICATIONS ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 1 DPAK TO-252 (Suffix ”T4”) DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN MJD31B MJD31C PNP MJD32B MJD32C V CBO Collector-Base Voltage (IE = 0) 80 100 V V CEO Collector-Emitter Voltage (IB = 0) 80 100 V V EBO Emitter-Base Voltage (IC = 0) 5 V Collector Current 3 A Collector Peak Current 5 A Base Current 1 A IC I CM IB o P t ot Total Dissipation at Tc = 25 C T stg Storage T emperature Tj Max. O perating Junction Temperature 15 W -65 to 150 o C 150 o C For PNP types the values are intented negative. May 1999 1/5 MJD31B/31C - MJD32B/32C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 8.33 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Max. Un it I CES Collector Cut-off Current (V BE = 0) V CE = Max Rating 20 µA I CEO Collector Cut-off Current (I B = 0) V CE = 60 V 50 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 0.1 mA Collector-Emitter Sustaining Voltage I C = 30 mA for MJD31B/32B for MJD31C/32C V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 3 A IB = 375 mA 1.2 V V BE(on) ∗ Base-Emitt er Voltage IC = 3 A V CE = 4 V 1.8 V DC Current Gain IC = 1 A IC = 3 A V CE = 4 V V CE = 4 V V CEO(sus) h F E∗ h fe Parameter Dynamic Current G ain Test Cond ition s I C = 0.5 A I C = 0.5 A 2/5 Typ . 80 100 V CE = 10 V V CE = 10 V 25 10 f = 1 KHz f = 1 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP type voltage and current values are negative. Safe Operating Area Min. Derating Curves 20 3 V V 50 MJD31B/31C - MJD32B/32C DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Collector-Base Capacitance (PNP type) 3/5 MJD31B/31C - MJD32B/32C TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 4/5 MJD31B/31C - MJD32B/32C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5