BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. INTERNAL SCHEMATIC DIAGRAM R 1 T yp.= 7K Ω R 2 T yp.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 V CBO Collector-Base Voltage (IE = 0) 60 80 100 V V CEO Collector-Emitter Voltage (IB = 0) 60 80 100 V V EBO Emitter-Base Voltage (IC = 0) IC I CM IB V Collector Current 4 A Collector Peak Current 6 A Base Current o P t ot Total Dissipation at Tc ≤ 25 C T stg Storage T emperature Tj 5 Max. O perating Junction Temperature 0.1 A 40 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. December 2000 1/6 BD677/677A/678/678A/679/679A/680/680A/681/682 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.12 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Test Cond ition s Collector Cut-off Current (I E = 0) V CE = rated V CBO V CE = rated V CBO I CEO Collector Cut-off Current (I B = 0) V CE = half rated V CEO I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ V BE ∗ h F E∗ h fe Collector-Emitter Saturation Voltage Base-Emitt er Voltage DC Current Gain Small Signal Current Gain Min. T C = 100 oC I C = 50 mA for BD677/677A/678/678A for BD679/679A/680/680A for BD681/682 for BD677/678/679/680/681/682 V CE = 3 V I C = 1.5 A for BD677A/678A/679A/680A V CE = 3 V IC = 2 A for BD677/678/679/680/681/682 V CE = 3 V I C = 1.5 A for BD677A/678A/679A/680A V CE = 3 V IC = 2 A V CE = 3 V f = 1MHz * Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % Safe Operating Areas 2/6 Max. Un it 0.2 2 mA mA 0.5 mA 2 mA 60 80 100 for BD677/678/679/680/681/682 I B = 30 mA I C = 1.5 A for BD677A/678A/679A/680A IB = 40 mA IC = 2 A I C = 1.5 A Typ . Derating Curve 750 750 1 V V V 2.5 V 2.8 V 2.5 V 2.5 V BD677/677A/678/678A/679/679A/680/680A/681/682 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) 3/6 BD677/677A/678/678A/679/679A/680/680A/681/682 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN types) Freewheel Diode Forward Voltage (PNP types) 4/6 BD677/677A/678/678A/679/679A/680/680A/681/682 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G H 0.087 4.65 0.163 3.8 3 0.183 0.150 3.2 0.118 2.54 0.126 0.100 H2 c1 0016114 5/6 BD677/677A/678/678A/679/679A/680/680A/681/682 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6