SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures Description The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. M174 Epoxy sealed Figure 1. Pin connection The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors. Table 1. 4 1 3 2 1. Drain 3. Gate 2. Source 4. Source Device summary Order code Marking Package Packaging SD2931-10 SD2931-10 M174 Plastic tray March 2008 Rev 6 1/16 www.st.com 16 Contents SD2931-10 Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/16 SD2931-10 Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol V(BR)DSS(1) VDGR VGS ID PDISS TJ TSTG Parameter Value Unit Drain source voltage 125 V Drain-gate voltage (RGS = 1 MΩ) 125 V Gate-source voltage ±20 V Drain current 20 A Power dissipation 389 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.45 °C/W Storage temperature 1. TJ = 150°C 1.2 Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance 3/16 Electrical characteristics (TCASE = +25 ºC) SD2931-10 2 Electrical characteristics (TCASE = +25 ºC) 2.1 Static Table 4. Static (per side) Symbol Test conditions Min 125 Typ Max Unit V(BR)DSS VGS = 0 V IDS = 100 mA IDSS VGS = 0 V VDS = 50 V 50 µA VGS = 20 V VDS = 0 V 250 nA VDS = 10 V ID = 250 mA VDS(ON) VGS = 10 V ID = 10 A GFS VDS = 10 V ID = 5 A CISS VGS = 0 V VDS = 50 V COSS VGS = 0 V CRSS VGS = 0 V IGSS VGS(Q) (1) V See table below 3.0 5 V V 6 mho f = 1 MHz 480 pF VDS = 50 V f = 1 MHz 190 pF VDS = 50 V f = 1 MHz 18 pF 1. VGS(Q) sorted with alpha/numeric code marked on unit. 2.2 Dynamic Table 5. Dynamic Symbol Test conditions Min Max Unit POUT VDD = 50 V f = 175 MHz 150 GPS VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 14 15 dB nD VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 55 65 % IDQ = 250 mA VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz Load mismatch All phase angles Table 6. 4/16 Typ W 10:1 VSWR VGS sorts A 2.0 - 2.1 K 2.9 - 3.0 B 2.1 - 2.2 L 3.0 - 3.1 C 2.2 - 2.3 M 3.1 - 3.2 D 2.3 - 2.4 N 3.2 - 3.3 E 2.4 - 2.5 P 3.3 - 3.4 F 2.5 - 2.6 Q 3.4 - 3.5 G 2.6 - 2.7 R 3.5 - 3.6 H 2.7 - 2.8 S 3.6 - 3.7 J 2.8 - 2.9 SD2931-10 3 Impedance data Impedance data Figure 2. Impedance data D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S Table 7. Impedance data Freq ZIN (Ω) ZDL (Ω) 30 MHz 1.7 - j 5.7 6.8 + j 0.9 175 MHz 1.2 - j 2.0 2.0 + j 2.4 5/16 Typical performance SD2931-10 4 Typical performance Figure 3. Capacitance vs drain-source voltage Figure 4. 10000 Drain current vs gate voltage 20 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) Tc=-20 °C f =1MHz 1000 Ciss Coss 100 Tc=+25 °C 15 10 Tc=+80 °C VDS = 10 V 5 Crss 0 10 0 10 20 30 40 2 50 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) Gate-source voltage vs case temperature Figure 6. Id =10A 1.04 5 5.5 6 Maximum thermal resistance vs case temperature Id =7A Id =5A Id =11A 1 0.96 Id =4A Id =2A 0.92 Id =1A 0.88 0.56 0.52 0.48 Id =.25A Vds= 10 V 0.84 Id =.1A 0.44 25 0.8 -25 Figure 7. 0 25 50 75 100 Safe operating area 100 Ids(A) 4.5 0.6 Id =9A 1.08 Tc, CASE TEMPERATURE (°C) 10 (1) 1 1 10 100 Vds(V) (1) Current in this area may be limited by Rds(on) 6/16 4 1.12 RTH(j-c) (°C/W) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Figure 5. 3.5 VGS, GATE-SOURCE VOLTAGE (V) 1000 35 45 55 65 Tc, CASE TEMPERATURE (°C) 75 85 SD2931-10 Typical performance 175 MHz 5 Typical performance 175 MHz Figure 8. Output power vs input power Figure 9. Output power vs input power 270 240 Vdd= 50V Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 270 210 180 Vdd= 40V 150 120 90 60 f= 175MHz Idq= 250mA 30 0 0 5 10 15 20 180 120 90 30 0 0 10 16 70 14 12 10 Vdd=50V Idq=250mA f=175Mhz 6 20 25 150 200 60 50 40 Vdd=50V Idq=250mA f=175Mhz 30 20 250 0 50 100 Pout, OUTPUT POWER (W) 150 200 250 Pout, OUTPUT POWER (W) Figure 12. Output power vs supply voltage Figure 13. Drain current vs gate-source voltage 270 20 Pin =10W 240 Tc=-20 °C 210 ID, DRAIN CURRENT (A) Pout,OUTPUT POWER(W) 15 Figure 11. Efficiency vs output power Nd, EFFICIENCY (%) Gp, POWER GAIN (dB) 5 Pin, INPUT POWER(W) 80 100 Vdd= 50V Idq= 250mA f= 175MHz 60 18 50 Tc =+80 °C 150 25 Figure 10. Power gain vs output power 0 Tc =+25 °C 210 Pin, INPUT POWER (W) 8 Tc =-20 °C 240 Pin =5W 180 150 Pin =2.5W 120 90 60 Tc=+25 °C 15 10 Tc=+80 °C 5 Idq= 250mA f= 175MHz 30 0 0 24 28 32 36 40 Vdd,DRAIN VOLTAGE(V) 44 48 52 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) 7/16 Test circuit 6 SD2931-10 Test circuit Figure 14. 175 MHz test circuit schematic (production test circuit) Note: All dimensions in inches REF. 1021579C Table 8. 8/16 Component part list Component Description T1 4:1 transformer, 25 ohm flexible coax .090 OD 6” long T2 1:4 transformer, 25 ohm semi-rigid coax .141 OD 6” long FB1 Toroid X 2, 0.5” OD .312” ID 850µ 2 turns FB2, FB3 VK200 FB4 Shield bead, 1” OD 0.5” ID 850µ 3 turns L1 1/4 wave choke, 50 ohm semi-rigid coax .141 OD 12” Long PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55 R1, R3 470 ohm 1 W chip resistor R2 360 ohm 1/2 W resistor R4 20 Kohm 10 turn potentiometer R5 560 ohm 1 W resistor C1, C11 470 pF ATC chip cap C2 43 pF ATC chip cap C3, C8, C9 Arco 404, 12-65 pF C4 Arco 423, 16-100 pF SD2931-10 Test circuit Table 8. Component part list (continued) Component Description C5 120 pF ATC chip cap C6 0.01 µF ATC chip cap C7 30 pF ATC chip cap C10 91 pF ATC chip cap C12, C15 1200 pF ATC chip cap C13, C14,C16, C17 0.01 µF / 500 V chip cap C18 10 µF 63 V electrolytic capacitor 4 inches Figure 15. 175 MHz test circuit photomaster 6.4 inches 9/16 Test circuit SD2931-10 Figure 16. 175 MHz test circuit 10/16 SD2931-10 7 Typical performance 30 MHz Typical performance 30 MHz Figure 17. Output power vs input power Figure 18. Power gain vs output power Pout, OUTPUT POWER (W) 250 30 PG, POWER GAIN (dB) Vdd = 50 V 200 150 Vdd = 40 V 100 f = 30 MHz IDQ = 250 mA 50 0 0 0.1 0.2 0.3 0.4 29 28 27 f = 30 MHz VDD = 50 V IDQ = 250 mA 26 25 24 0.5 0 40 Pin, INPUT POWER (W) 80 120 Figure 19. Efficiency vs output power 200 Pin=.31 W 60 50 Pin=.22 W 150 Pout(W) 40 30 f = 30 MHz VDD = 50 V IDQ = 250 mA 20 200 Figure 20. Output power vs supply voltage 70 Efficiency (%) 160 Pout, OUTPUT POWER (W) 10 100 Pin=.13 W 50 f = 30 MHz IDQ = 250 mA 0 0 40 80 120 160 200 0 24 Pout, OUTPUT POWER (W) 28 32 36 40 44 48 52 VDD(V) Pout, OUTPUT POWER (W) Figure 21. Output power vs gate voltage 200 T= +25 °C T= -20 °C 150 T= +80 °C 100 VDD = 50 V IDQ = 250 mA f = 30 MHz Pin = Constant 50 0 0 1 2 3 4 5 6 VGS GATE-SOURCE VOLTAGE (V) 11/16 Test circuit 30 MHz 8 SD2931-10 Test circuit 30 MHz Figure 22. 30 MHz test circuit schematic (engineering test circuit) Figure 23. 30 MHz test circuit component part list Symbol Description T1 9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15” long T2 1:4 transformer, 50 Ω flexible coax .225 OD 15” long FB1 Toroid 1.7” OD .30” ID 220 µ 4 turns FB2 Surface mount EMI shield bead FB3 Toroid 1.7” OD .300” ID 220µ 3 turns RFC1 Toroid 0.5” OD 0.30” ID 125µ 4 turns 12 awg wire PCB 0.62” Woven Fiberglass, 1 oz. Copper, 2 Sides, εr = 2.55 R1, R3 R2 1 KΩ 1 W chip resistor 680 Ω 3 W wirewound resistor C1,C4,C6,C7,C8,C 9, 0.1 µF ATC chip cap C11,C12,C13 12/16 C2,C3 750 pF ATC chip cap C5 470 pF ATC chip cap C10 10 µF 63 V electrolytic capacitor C14 100 µF 63 V electrolytic capacitor SD2931-10 9 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 13/16 Package mechanical data Table 9. SD2931-10 M174 (0.500 DIA 4/L N/HERM W/FLG) mechanical data mm. Inch Dim. Min A Typ 5.56 B Max Min 5.584 0.219 3.18 Typ Max 0.230 0.125 C 6.22 6.48 0.245 0.255 D 18.28 18.54 0.720 0.730 E 3.18 0.125 F 24.64 24.89 0.970 0.980 G 12.57 12.83 0.495 0.505 H 0.08 0.18 0.003 0.007 I 2.11 3.00 0.083 0.118 J 3.81 4.45 0.150 0.175 K 7.11 0.280 L 25.53 26.67 1.005 1.050 M 3.05 3.30 0.120 0.130 Figure 24. Package dimensions Controlling Dimension: Inches 14/16 1011000D SD2931-10 10 Revision history Revision history Table 10. Document revision history Date Revision Changes 09-Sep-2004 4 17-Jun-2004 5 Updated Table 5: Dynamic on page 4 04-Mar-2008 6 Updated Table 4: Static (per side), Table 5: Dynamic and Table 6: VGS sorts on page 4 15/16 SD2931-10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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