START620 NPN SiGe RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 (SC70) DESCRIPTION The START620 is a member of the START family that provide market with the state of the art of RF silicon process. It uses ST’s Silicon Germanium technology. This technology offers ft’s of up to 45GHz and Fmax’s of over 60GHz. The START620 offers the best mix of gain and NF for given breakdown voltage(BVceo = 3.3V). It reaches performance level only achieved with GaAs products before. ORDER CODE START620TR BRANDING 620 APPLICATIONS • LNA FOR GSM/DCS, CDMA, WCDMA, BLUETOOTH • GENERAL PURPOSE 500MHz-5GHz ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Vceo Collector emitter voltage Parameter 3.3 V Vcbo Collector base voltage 10 V Vebo Emitter base voltage 1.5 V Ic Collector current 40 mA Ib Base current Ptot Total dissipation, Ts = 101 Tstg Storage temperature Tj Max. operating junction temperature 4 mA 135 mW -65 to 150 oC 150 oC ABSOLUTE MAXIMUM RATINGS Rthjs May, 3 2002 Thermal Resistance Junction soldering point 270 oC/W 1/5 START620 ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified) Symbol Parameter Test Conditions Icbo Collector cutoff current Iebo Emitter-base cutoff current Hfe DC current gain Ic = 20mA, Vce = 2V 100 NFmin Minimim noise figure Ic = 5mA, Vce = 2V, f = 1.8GHz, Zs = Zsopt 0.8 dB Ga NFmin associated gain Ic = 5mA, Vce = 2V, f = 1.8GHz 14.5 dB Insertion power gain Ic = 20mA, Vce = 2V, f = 1.8GHz 16.2 dB |S21|2 (1) Min. Typ. Max. Unit Vcb = 8V, Ie = 0A 150 nA Veb = 1.5V, Ic = 0A 15 µA Maximum stable gain Ic = 20mA, Vce = 2V, f = 1.8GHz 18.6 dB P-1dB 1dB compression point Ic = 20mA,Vce = 2V, f = 1.8GHz 13 dBm OIP3 Ouput third order intercept point Ic = 20mA,Vce = 2V, f = 1.8GHz 23 dBm Gms Note(1): Gms = | S 21 / S12 | PINOUT 4 PIN CONNECTION 3 Top view 1 2 SOT343 2/5 Pin No. Description 1 BASE 3 COLLECTOR 2,4 EMITTER START620 COMMON EMITTER S-PARAMETERS ( VCE = 2V, IC = 20mA ) FREQ IS11I S11∠Φ (MHz) 0.1 0.5 0.9 1 1.5 1.8 2 2.5 3 3.5 4 0.505 0.322 0.245 0.237 0.193 0.188 0.190 0.218 0.219 0.209 0.195 -21 -69 -88 -92 -97 -95 -89 -76 -86 -80 -89 IS21I 35.490 19.713 12.607 11.751 7.564 6.534 5.834 4.639 3.688 3.537 3.006 S21∠Φ IS12I S12∠Φ IS22I S22∠Φ 163 134 130 130 133 139 144 154 165 172 180 0.009 0.030 0.048 0.052 0.071 0.088 0.093 0.109 0.160 0.181 0.200 80 84 100 102 118 127 133 148 170 174 173 0.940 0.611 0.484 0.470 0.430 0.443 0.449 0.497 0.455 0.412 0.355 -14 -38 -43 -44 -46 -48 -49 -55 -66 -73 -80 3/5 START620 PACKAGE DIMENSIONS SOT343 (SC-70 4 leads) 1.30 1.15-1.35 2.00-2.20 1.15 0.55-0.65 1.90-2.10 1.15-1.35 0.80-1.00 0.25-0.35 4/5 0.00-0.10 0.45 0.10-0.20 START620 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5