MMBT3906 ® SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ Type Marking MMBT3906 36 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE ■ SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) -60 V V CEO Collector-Emitter Voltage (I B = 0) -40 V V EBO Emitter-Base Voltage (I C = 0) -6 V -200 mA 350 mW IC Collector Current o P tot Total Dissipation at T C = 25 C T stg Storage Temperature Tj June 2002 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/4 MMBT3906 THERMAL DATA R thj-amb • Thermal Resistance Junction-Ambient • Device mounted on a PCB area of 1 cm Max o 357.1 C/W 2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CEX Collector Cut-off Current (V BE = 3 V) Parameter V CE = -30 V -50 nA I BEX Collector Cut-off Current (V BE = 3 V) V CE = -30 V -50 nA V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) Test Conditions Min. Typ. I C = -1 mA -40 V V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) I C = -10 µA -60 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -10 µA -6 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -10 mA I C = -50 mA I B = -1 mA I B = -5 mA V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -10 mA I C = -50 mA I B = -1 mA I B = -5 mA DC Current Gain IC IC IC IC IC V CE = V CE = V CE = V CE = V CE = h FE ∗ fT = = = = = -0.1 mA -1 mA -10 mA -50 mA -100 mA V V V V V 60 80 100 60 30 V V -0.85 -0.95 V V 300 Transition Frequency I C = -10mA V CE = -20 V f = 100MHz Noise Figure V CE = -5 V I C = -0.1 mA f = 10 Hz to 15.7 KHz R G = 1 KΩ 4 dB C CBO Collector-Base Capacitance IE = 0 V CB = -5 V 6 pF C EBO Emitter-Base Capacitance IC = 0 VEB = -0.5 V 25 pF td Delay Time I B = -1 mA tr Rise Time I C = -10 mA V CC = -3V ts Storage Time I C = -10 mA V CC = -3V I B1 = -I B2 = -1 mA NF Fall Time tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 -1 -1 -1 -1 -1 -0.65 -0.25 -0.4 f = 100 KHz f = 100 KHz 250 MHz 35 ns 35 ns 225 ns 72 ns MMBT3906 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 MMBT3906 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4