STB85NF3LL N-channel 30V - 0.006Ω - 85A - D2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB85NF3LL 30V <0.008Ω 85A ■ Optimal RDS(on) x Qg trade-OFF @4.5V ■ COnduction losses reduced ■ Switching losses reduced 3 1 D²PAK Description This application specific Power MOSFET is the third genaration of STMicroelectronics unique “ Single Feature Size” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STB85NF3LLT4 B85NF3LL D²PAK Tape & reel August 2006 Rev 4 1/13 www.st.com 13 Contents STB85NF3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STB85NF3LL 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS VGSM Parameter Value Unit Drain-source voltage (VGS = 0) 30 V Drain-gate voltage (RGS = 20KΩ) 30 V Gate-source voltage ± 16 V Gate-source voltage pulsed (tp ≤50µs; duty cycle 25%; TJ ≤150°C) ± 20 V ID Drain current (continuous) at TC = 25°C 85 A ID Drain current (continuous) at TC=100°C 60 A IDM(1) Drain current (pulsed) 340 A PTOT Total dissipation at TC = 25°C 110 W Derating factor 0.73 W/°C –65 to 175 °C 175 °C Value Unit Tstg TJ Storage temperature Max. Operating Junction Temperature 1. Pulse width limited by safe operating area Table 2. Symbol Thermal data Parameter RthJC Thermal resistance junction-case Max 0.36 °C/W RthJA Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/13 Electrical characteristics 2 STB85NF3LL Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±16V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 40A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Typ. Max. 30 VDS = Max rating @125°C 1 10 µA µA ±100 nA 1 V 0.006 0.008 0.0075 0.0095 VGS = 4.5V, ID = 40A Unit V VDS = Max rating, IDSS Table 4. Min. Ω Ω Dynamic Parameter Test conditions Forward transconductance VDS > ID(on) x RDS(on)max, ID = 40 A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f = 1 MHz, VGS = 0 Total gate charge Gate-source charge Gate-drain charge Min. VDD =24V, ID = 60A VGS =4.5V Typ. Max. Unit 30 S 2210 635 138 pF pF pF 30 9 12.5 40 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Symbol td(on) tr td(off) tf td(off) tf tc 4/13 Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time RG=4.7Ω, VGS=4.5V Off-voltage rise time Fall time Cross-over time Vclamp =24V, ID =30A RG = 4.7Ω, VGS = 4.5V Figure 14 on page 8 VDD= 15V, ID= 30A, Figure 12 on page 8 Min. 22 130 36.5 36.5 ns ns ns ns 32 23 40 ns ns ns STB85NF3LL Electrical characteristics Table 6. Symbol Source drain diode Max Unit Source-drain current 85 A ISDM(1) Source-drain current (pulsed) 340 A VSD(2) Forward on voltage ISD = 85A, VGS = 0 1.3 V Reverse recovery time Reverse recovery charge Reverse recovery current di/dt = 100A/µs, VDD = 15V, TJ = 150°C ISD trr Qrr IRRM Parameter Test conditions ISD = 85A, Min Typ. 65 105 3.4 ns µC A Figure 14 on page 8 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/13 Electrical characteristics STB85NF3LL 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STB85NF3LL Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/13 Test circuit 3 STB85NF3LL Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 STB85NF3LL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB85NF3LL D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 E1 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 10/13 STB85NF3LL 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.153 0.161 MAX. MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. P0 3.9 4.1 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 1.574 0.933 0.956 * on sales type 11/13 Revision history 6 STB85NF3LL Revision history Table 7. 12/13 Revision history Date Revision Changes 09-Sep-2004 3 Complete document 28-Jul-2006 4 New template, SOA updated STB85NF3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13