STMICROELECTRONICS STB85NF3LLT4

STB85NF3LL
N-channel 30V - 0.006Ω - 85A - D2PAK
Low gate charge STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB85NF3LL
30V
<0.008Ω
85A
■
Optimal RDS(on) x Qg trade-OFF @4.5V
■
COnduction losses reduced
■
Switching losses reduced
3
1
D²PAK
Description
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique “
Single Feature Size” strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STB85NF3LLT4
B85NF3LL
D²PAK
Tape & reel
August 2006
Rev 4
1/13
www.st.com
13
Contents
STB85NF3LL
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
................................................ 8
STB85NF3LL
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
VDS
VDGR
VGS
VGSM
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
30
V
Drain-gate voltage (RGS = 20KΩ)
30
V
Gate-source voltage
± 16
V
Gate-source voltage pulsed
(tp ≤50µs; duty cycle 25%; TJ ≤150°C)
± 20
V
ID
Drain current (continuous) at TC = 25°C
85
A
ID
Drain current (continuous) at TC=100°C
60
A
IDM(1)
Drain current (pulsed)
340
A
PTOT
Total dissipation at TC = 25°C
110
W
Derating factor
0.73
W/°C
–65 to 175
°C
175
°C
Value
Unit
Tstg
TJ
Storage temperature
Max. Operating Junction Temperature
1. Pulse width limited by safe operating area
Table 2.
Symbol
Thermal data
Parameter
RthJC
Thermal resistance junction-case Max
0.36
°C/W
RthJA
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
3/13
Electrical characteristics
2
STB85NF3LL
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
V(BR)DSS
On/off states
Parameter
Drain-source breakdown
voltage
Test conditions
ID = 250µA, VGS= 0
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±16V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 40A
Symbol
gfs (1)
Ciss
Coss
Crss
Qg
Qgs
Qgd
Typ.
Max.
30
VDS = Max rating @125°C
1
10
µA
µA
±100
nA
1
V
0.006 0.008
0.0075 0.0095
VGS = 4.5V, ID = 40A
Unit
V
VDS = Max rating,
IDSS
Table 4.
Min.
Ω
Ω
Dynamic
Parameter
Test conditions
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 40 A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f = 1 MHz,
VGS = 0
Total gate charge
Gate-source charge
Gate-drain charge
Min.
VDD =24V, ID = 60A
VGS =4.5V
Typ.
Max.
Unit
30
S
2210
635
138
pF
pF
pF
30
9
12.5
40
nC
nC
nC
Typ.
Max.
Unit
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
Symbol
td(on)
tr
td(off)
tf
td(off)
tf
tc
4/13
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
Fall time
RG=4.7Ω, VGS=4.5V
Off-voltage rise time
Fall time
Cross-over time
Vclamp =24V, ID =30A
RG = 4.7Ω, VGS = 4.5V
Figure 14 on page 8
VDD= 15V, ID= 30A,
Figure 12 on page 8
Min.
22
130
36.5
36.5
ns
ns
ns
ns
32
23
40
ns
ns
ns
STB85NF3LL
Electrical characteristics
Table 6.
Symbol
Source drain diode
Max
Unit
Source-drain current
85
A
ISDM(1)
Source-drain current (pulsed)
340
A
VSD(2)
Forward on voltage
ISD = 85A, VGS = 0
1.3
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
di/dt = 100A/µs,
VDD = 15V, TJ = 150°C
ISD
trr
Qrr
IRRM
Parameter
Test conditions
ISD = 85A,
Min
Typ.
65
105
3.4
ns
µC
A
Figure 14 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/13
Electrical characteristics
STB85NF3LL
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/13
STB85NF3LL
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
7/13
Test circuit
3
STB85NF3LL
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
Figure 15. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/13
STB85NF3LL
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data
STB85NF3LL
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
MIN.
4.4
TYP
4.6
0.173
TYP.
0.181
MAX.
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
10
E1
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0º
0.015
4º
3
V2
1
10/13
STB85NF3LL
5
Packaging mechanical data
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
0.153 0.161
MAX.
MIN.
330
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
P0
3.9
4.1
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
1.574
0.933 0.956
* on sales type
11/13
Revision history
6
STB85NF3LL
Revision history
Table 7.
12/13
Revision history
Date
Revision
Changes
09-Sep-2004
3
Complete document
28-Jul-2006
4
New template, SOA updated
STB85NF3LL
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