STB100NH02L N-channel 24V - 0.0052Ω - 60A - D2PAK STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STB100NH02L 24V <0.006Ω 60A(1) 1. Value limited by wire bonding ■ RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device 3 1 D2PAK Description The STB100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved. Internal schematic diagram Applications ■ Switching application Order codes Part number STB100NH02LT4 June 2006 Marking Package B100NH02L D Rev 4 2PAK Packaging Tape & reel 1/13 www.st.com 13 Contents STB100NH02L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STB100NH02L 1 Electrical ratings Electrical ratings Table 1. Symbol Vspike(1) VDS VDGR Absolute maximum ratings Parameter Value Unit Drain-source voltage rating 30 V Drain-source voltage (VGS = 0) 24 V Drain-gate voltage (RGS = 20 kΩ) 24 V ± 20 V VGS Gate- source voltage ID(2) Drain current (continuous) at TC = 25°C 60 A ID(2) Drain current (continuous) at TC = 100°C 60 A Drain current (pulsed) 240 A Total dissipation at TC = 25°C 100 W Derating Factor 0.67 W/°C Single pulse avalanche energy 600 mJ -55 to 175 °C IDM(3) Ptot EAS (4) Tstg Tj Storage temperature Max. operating junction temperature 1. Garanted when external Rg=4.7Ω and tf < tfmax. 2. Value limited by wire bonding 3. Pulse width limited by safe operating area. 4. Starting Tj = 25 °C, ID = 30A, VDD = 15V Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C TJ 3/13 Electrical characteristics 2 STB100NH02L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 25mA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 20V VDS = 20V, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A VGS = 5V, ID = 15A Table 4. Symbol Test conditions Typ. Max. 24 1 Unit V 1 10 µA µA ±100 nA 1.8 V 0.0052 0.007 0.006 0.011 Ω Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 10V , ID = 30A 40 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 15V, f = 1MHz, VGS = 0 2850 800 120 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 10V, ID = 30A RG = 4.7Ω VGS = 10V (see Figure 13) 13 75 50 18 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 10V, ID = 30A, VGS = 10V, RG = 4.7Ω (see Figure 14) 47.5 10 7 Gate input resistance f=1 MHz gate DC Bias=0 test signal level =20 mV open drain RG 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/13 Min. 1 64 nC nC nC Ω STB100NH02L Electrical characteristics Table 5. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 30A, VGS = 0 Reverse recovery time ISD = 60A, di/dt = 100A/µs, Reverse recovery charge VDD = 16V, Tj = 150°C Reverse recovery current (see Figure 15) 35 35 2 Max. Unit 60 240 A A 1.3 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/13 Electrical characteristics STB100NH02L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STB100NH02L Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/13 Test circuit 3 STB100NH02L Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/13 Figure 18. Switching time waveform STB100NH02L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB100NH02L D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 0.368 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 10/13 STB100NH02L 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/13 Revision history 6 STB100NH02L Revision history Table 6. 12/13 Document revision history Date Revision Changes 21-Jun-2006 3 Preliminary document 12-Jun-2006 4 New template STB100NH02L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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