STC03DE220HV Hybrid emitter switched bipolar transistor ESBT® 2200 V - 3 A - 0.33 W Features Table 1. Features VCS(ON) IC RCS(ON) 1V 3A 0.33Ω ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω . Applications ■ 1 Aux SMPS for three phase mains 23 4 TO247-4L HV Description The STC03DE220HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE220HV is designed for use in aux flyback smps for any three phase application. Table 2. Figure 1. Internal schematic diagrams Device summary Order code Marking Package Packaging STC03DE220HV C03DE220HV TO247-4L HV Tube May 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 1 STC03DE220HV Electrical ratings Table 3. Absolute maximum ratings Symbol Value Unit 2200 V VCS(SS) Collector-source voltage (V BS = VGS =0) VBS(OS) Base-source voltage (IC = 0, VGS = 0) 30 V VSB(OS) Source-base voltage (IC = 0, VGS = 0) 9 V ± 20 V Collector current 3 A Collector peak current (tP < 5 ms) 6 A Base current 3 A IBM Base peak current (tP < 1 ms) 6 A Ptot Total dissipation at Tc ≤25 °C 166 W Tstg Storage temperature -40 to 150 °C 125 °C VGS IC ICM IB TJ Table 4. Symbol Rthj-case 2/7 Parameter Gate-source voltage Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case max Value Unit 0.6 °C/W STC03DE220HV 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 5. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICS(SS) Collector-source = 2200 V V current (V BS =VGS = 0) CS(SS) 100 µA IBS(OS) Base-source current (IC =0, VGS = 0) VBS(OS) = 30 V 10 µA ISB(OS) Source-base current (IC =0, VGS = 0) VSB(OS) = 9 V 100 µA IGS(OS) Gate-source leakage (V BS = 0) VGS = ± 20 V 500 nA VCS(ON) Collector-source ON voltage VGS = 10 V IC = 1.5 A IB = 0.15 A VGS = 10 V IC = 3 A VCS = 1 V VGS =10 V IC =1.5 A 15 VCS = 1 V VGS =10 V IC =3 A 10 hFE DC current gain VBS(ON) Base-source ON voltage VGS(th) Gate threshold voltage VBS = VGS IB = 250 µA Input capacitance (VGS = VCB = 0) f = 1 MHz Ciss QGS(tot) ts tf 0.2 0.25 IB = 0.6 A VGS = 10 V IC = 1.5 A IB = 0.15 A IB = 0.6 A VGS =10 V IC =3 A VCS = 25 V 0.82 1 1.5 Gate-source Charge (V CB = 0) VCS =15 V INDUCTIVE LOAD Storage time Fall time VGS = 10 V RG = 47 Ω VClamp = 1760 V tp = 4 µs IC = 1.5 A IB = 0.3 A V V VGS = 10 V IC = 1.8 A 2.2 V V 3 V 750 pF 12.5 nC 1040 ns 20 ns 7.6 V 5.8 V VCC = V Clamp = 400 V VCS(dyn) Collector-source dynamic voltage (500 ns) VGS = 10 V IC = 1.5 A IB = 0.3 A RG = 47 Ω tpeak = 500 ns IBpeak = 3 A VCC = V Clamp = 400 V VCS(dyn) Collector-source dynamic voltage (1 µs) VGS = 10 V IC = 1.5 A IB = 0.3 A RG = 47 Ω tpeak = 500 ns VCSW Maximum collectorsource voltage switched without snubber RG = 47 Ω hFE = 5 IBpeak = 3 A IC = 3 A 2200 V 3/7 Package mechanical data 3 STC03DE220HV Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 4/7 STC03DE220HV Package mechanical data TO247-4L HV mechanical data DIM. A A1 A2 MIN. 4.85 2.20 mm. TYP 2.50 1.27 MAX. 5.15 2.60 b 0.95 b1 1.10 1.50 b2 c D D1 E 2.50 0.40 23.85 2.90 0.80 24.15 15.45 e 24 21.50 15.60 2.54 1.30 15.75 5.08 e1 L L1 L2 L3 øP S 1.10 10.20 2.20 2.50 18.50 3 3.55 10.80 2.80 3.65 5.50 7734874_A 5/7 Revision history STC03DE220HV 4 Revision history Table 6. 6/7 Document revision history Date Revision Changes 27-Nov-2006 1 First release. 19-May-2008 2 Document status promoted from preliminary data to datasheet. 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