STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive ■ Low saturation voltage ■ High pulsed current capability ■ Gate and gate-emitter resistor 3 2 1 3 1 DPAK IPAK 3 3 12 1 D²PAK I²PAK Application ■ Pencil coil electronic ignition driver Figure 1. Internal schematic diagram Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order codes Marking Package Packaging STGD18N40LZT4 GD18N40LZ DPAK Tape and reel STGD18N40LZ-1 GD18N40LZ IPAK Tube STGB18N40LZT4 GB18N40LZ D²PAK Tape and reel STGB18N40LZ-1 GB18N40LZ I²PAK Tube March 2008 Rev 2 1/18 www.st.com 18 Contents STGD18N40LZ - STGB18N40LZ Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/18 ............................................... 9 STGD18N40LZ - STGB18N40LZ 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter DPAK D²PAK IPAK I²PAK Unit VCES Collector-emitter voltage (vGE = 0) VCES(clamped) V VECS Emitter collector voltage (VGE = 0) 20 V IC (1) Collector current (continuous) at TC = 100 °C ICP (2) Pulsed collector current 25 30 A 40 A VGE(clamped) V VGE Gate-emitter voltage PTOT Total dissipation at TC = 25 °C EAS Single pulse energy TC= 25 °C, L = 3 mH, RG = 1 KΩ 300 mJ EAS Single pulse energy TC=150 °C, L = 3 mH, RG = 1 KΩ 180 mJ 8 kV 800 V 2 kV – 55 to 175 °C 125 Human body model, R= 1550 Ω, C = 100 pF ESD Machine model, R = 0, C = 100 pF Charged device model Tstg Tj 150 W Storage temperature Operating junction temperature 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulse width limited by max. junction temperature allowed Table 3. Thermal resistance Value Symbol Parameter DPAK D²PAK IPAK I²PAK Unit Rthj-case Thermal resistance junction-case max 1.2 1 °C/W Rthj-amb Thermal resistance junction-ambient max 65 62.5 °C/W 3/18 Electrical characteristics 2 STGD18N40LZ - STGB18N40LZ Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Static electrical characteristics Parameter Min. Typ. Max. Unit IC = 2 mA, RG = 1 kΩ TC = - 40 °C to 150 °C 370 400 430 Emitter collector break-down voltage (VGE = 0) IC = 75 mA 20 28 VGE(clamped) Gate emitter clamped voltage IG = ±2 mA 12 ICES Collector cut-off current (VGE = 0) IGES Gate cut-off current (VCE = 0) RGE Gate emitter resistance RG Gate resistance VGE(th) Gate threshold voltage Collector emitter VCES(clamped) clamped voltage (VGE = 0) V(BR)ECS VGEP VCE(sat) 4/18 Test conditions V V 16 V VCE = 15 V, TC = 150 °C 10 µA VCE = 200 V,TC = 150 °C 100 µA VGE = ±10 V 450 625 830 µA 12 16 22 KΩ 1.6 VCE = 12 V, IC = 1 mA,TC = -40 °C 1.4 VCE = 12 V, IC = 1 mA 1.2 VCE = 12 V, IC = 1 mA, TC =150 °C 0.7 KΩ V 1.6 2.3 V V Gate emitter plateau VCE = 12 V, IC = 10 A voltage 2.9 VGE = 4.5 V, IC = 10 A 1.35 VGE = 4.5 V, IC = 10 A, TC = 150 °C 1.30 V VGE = 3.8 V, IC = 6 A 1.30 V Collector emitter saturation voltage V 1.7 V STGD18N40LZ - STGB18N40LZ Table 5. Symbol Cies Dynamic electrical characteristics Parameter Test conditions Min. Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Electrical characteristics Gate charge Table 6. Switching on/off Symbol Parameter VCE = 25 V, f = 1 MHz, VGE = 0 VCE = 280 V, IC = 10 A, VGE = 5 V Test conditions td(on) tr Resistive load Turn-on delay time Rise time VCC = 14 V, IC = 10 A RG = 1 kΩ, VGE = 5 V td(on) tr Resistive load Turn-on delay time Rise time VCC = 14 V, IC = 10 A RG = 1 kΩ, VGE = 5 V, TC = 150 °C td(off) tf dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope VCC = 300 V, L = 1 mH RG = 1 kΩ, VGE = 5 V td(off) tf dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope VCC = 300 V, L = 1 mH RG = 1 kΩ, VGE = 5 V TC = 150 °C Min. Typ. Max. Unit 490 pF 90 pF 6.5 pF 23 nC Typ. Max. Unit 1 5.8 µs µs 1 5.9 µs µs 14 6.7 90 µs µs V/µs 15 9.8 80 µs µs V/µs 5/18 Electrical characteristics STGD18N40LZ - STGB18N40LZ 2.1 Electrical characteristics (curves) Figure 2. Collector-emitter voltage vs temperature Figure 3. Collector-emitter voltage vs temperature Figure 4. Collector-emitter voltage vs temperature Figure 5. Self clamped inductive switch Figure 6. Collector current vs collector emitter voltage @ 25 °C Figure 7. Collector current vs collector emitter voltage @ -40 °C HV42380 60 IC (A) V GE = 8 V 50 V GE = 5 V HV42390 IC (A) 60 V GE = 4. 5 V VGE = 8 V VGE = 4.5 V 50 → VGE = 5 V V GE = 4 V 40 VGE = 4 V 40 V GE = 3 . 8 V 30 20 VGE = 3.8 V 30 20 TC = -40 °C T C = 25 °C 10 10 0 0 0 6/18 1 2 3 4 5 V CE (V) 0 1 2 3 4 5 VCE (V)6 STGD18N40LZ - STGB18N40LZ Figure 8. Electrical characteristics Collector current vs collector emitter voltage @ 175 °C HV42400 60 IC (A) Figure 9. Transfer characteristics HV38710 30 IC (A) VGE = 5 V VGE = 8 V 50 VGE = 4.5 V 40 VGE = 4 V 24 18 30 VGE = 3.8 V 12 TC = 25 °C 20 TC = 175 °C TC = 175 °C TC = -40 °C 6 10 0 0 0 1 2 3 4 5 VCE (V)6 1 2 3 4 VGE (V)5 Figure 10. Collector emitter leakage current vs. temperature Figure 11. Normalized collector emitter breakdown voltage vs temperature Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized collector emitter voltage vs temperature 7/18 Electrical characteristics Figure 14. Thermal impedance for D²PAK / I²PAK 8/18 STGD18N40LZ - STGB18N40LZ Figure 15. Thermal impedance for DPAK / IPAK STGD18N40LZ - STGB18N40LZ 3 Test circuits Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Test circuit for resistive load switching 9/18 Package mechanical data 4 STGD18N40LZ - STGB18N40LZ Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STGD18N40LZ - STGB18N40LZ Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 11/18 Package mechanical data STGD18N40LZ - STGB18N40LZ TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 e e1 6.60 2.28 4.40 H 4.60 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 12/18 STGD18N40LZ - STGB18N40LZ Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 13/18 Package mechanical data STGD18N40LZ - STGB18N40LZ I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 14/18 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 STGD18N40LZ - STGB18N40LZ 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 15/18 Packaging mechanical data STGD18N40LZ - STGB18N40LZ D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STGD18N40LZ - STGB18N40LZ 6 Revision history Revision history Table 7. Document revision history Date Revision Changes 18-Jan-2008 1 Initial release. 07-Mar-2008 2 Modified Figure 7, Figure 8, Figure 10. 17/18 STGD18N40LZ - STGB18N40LZ Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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