STMICROELECTRONICS STGP10NC60H

STGP10NC60H
N-channel 10A - 600V - TO-220
Very fast PowerMESH™ IGBT
General features
Type
VCES
STGP10NC60H
600V
IC
VCE(sat)
(Max)@ 25°C @100°C
< 2.5V
10A
■
Low on-voltage drop (Vcesat)
■
Low CRES / CIES ratio (no cross-conduction
susceptbility)
■
3
1
2
TO-220
Very soft ultra fast recovery antiparallel diode
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix "H" identifies a family
optimized for high frequency applications in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
Internal schematic diagram
Applications
■
High frequency motor controls
■
SMPS and PFC in both hard switch and
resonant topologies
■
Motor drivers
Order codes
Part number
Marking
Package
Packaging
STGP10NC60H
GP10NC60H
TO-220
Tube
October 2006
Rev 2
1/13
www.st.com
13
Contents
STGP10NC60H
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
............................................... 9
STGP10NC60H
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC(1)
Collector current (continuous) at TC = 25°C
20
A
IC(1)
Collector current (continuous) at TC = 100°C
10
A
ICL(2)
Collector current (pulsed)
40
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25°C
60
W
Tstg
Storage temperature
– 55 to 150
°C
Value
Unit
Tj
Operating junction temperature
1. Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = ----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
2. Vclamp=480V, Tj=150°C, RG=10Ω, VGE=15V
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case
Thermal resistance junction-case max
2.08
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
3/13
Electrical characteristics
2
STGP10NC60H
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
Parameter
VBR(CES)
Collector-emitter
breakdown voltage
ICES
Collector cut-off current
(VGE = 0)
IGES
Test conditions
IC= 1mA, VGE= 0
Min.
Typ.
Max.
600
Unit
V
VCE= Max rating,TC= 25°C
VCE=Max rating,TC= 125°C
150
1
µA
mA
Gate-emitter leakage
current (VCE = 0)
VGE= ±20V , VCE= 0
±100
nA
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250 µA
5.75
V
VCE(sat)
Collector-emitter saturation VGE= 15V, IC= 5A
voltage
VGE= 15V, IC= 5A, Tc= 125°C
2.5
V
V
gfs
Table 4.
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
4/13
Static
Forward transconductance
5
1.9
1.7
VCE = 15V, IC= 5A
3.5
S
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
VCE = 25V, f = 1MHz,
VGE = 0
VCE = 390V, IC = 5A,
VGE = 15V,
(see Figure 16)
Min.
Typ.
Max.
Unit
365
43
8.3
pF
pF
pF
19.2
4.5
7
nC
nC
nC
STGP10NC60H
Electrical characteristics
Table 5.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Symbol
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
Min.
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V,
(see Figure 17)
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V,
Tj=125°C
(see Figure 17)
Vcc = 390V, IC = 5A,
RGE = 10Ω , VGE = 15V,
(see Figure 17)
Vcc = 390V, IC = 5A,
RGE=10Ω , VGE =15V,
Tj=125°C
(see Figure 17)
Typ.
Max.
Unit
14.2
5
1000
ns
ns
A/µs
14
5
920
ns
ns
A/µs
27
72
85
ns
ns
ns
50
108
139
ns
ns
ns
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching Losses
Total switching losses
Test conditions
VCC = 390V, IC = 75A
RG= 10Ω, VGE=15V,
Tj=25°C
(see Figure 17)
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V,
Tj= 125°C
(see Figure 17)
Min.
Typ.
Max.
Unit
31.8
95
126.8
µJ
µJ
µJ
61.8
173
234.8
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in (see Figure 16). If the IGBT is
offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are
at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/13
Electrical characteristics
STGP10NC60H
2.1
Electrical characteristics (curves)
Figure 1.
Output characterisics
Figure 2.
Transfer charactristics
Figure 3.
Transconductance
Figure 4.
Collector-emitter on voltage vs
temperature
Figure 5.
Gate charge vs gate-source voltage Figure 6.
6/13
Capacitance variations
STGP10NC60H
Electrical characteristics
Figure 7.
Normalized gate threshold voltage
vs temperature
Figure 8.
Collector-emitter on voltage vs
collector current
Figure 9.
Normalized breakdown voltage vs
temperature
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
7/13
Electrical characteristics
Figure 13. Thermal Impedance
8/13
STGP10NC60H
Figure 14. Turn-off SOA
STGP10NC60H
3
Test circuits
Test circuits
Figure 15. Test circuit for inductive load
switching
Figure 16. Gate charge test circuit
Figure 17. Switching waveform
9/13
Package mechanical data
4
STGP10NC60H
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STGP10NC60H
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
11/13
Revision history
5
STGP10NC60H
Revision history
Table 7.
12/13
Revision history
Date
Revision
Changes
18-Nov-2005
1
Initial release.
12-Oct-2006
2
New template, complete version
STGP10NC60H
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