STGW30NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH™ IGBT General features Type VCES STGW30NC60VD 600V VCE(sat) (Max)@ 25°C IC @100°C <2.5V 40A ■ High current capability ■ High frequency operation up to 50KHz ■ Very soft ultra fast recovery antiparallel diode ■ New generation products with tighter parameter distribution TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency. Internal schematic diagram Applications ■ High frequency inverters, UPS ■ Motor drivers ■ SMPS and PFC in both hard switch and resonant topologies Order code Part number Marking Package Packaging STGW30NC60VD GW30NC60VD TO-247 Tube February 2007 Rev 2 1/13 www.st.com 13 Contents STGW30NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 9 STGW30NC60VD 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at 25°C 80 A IC (1) Collector current (continuous) at 100°C 40 A Collector current (pulsed) 100 A ICL Turn-off soa minimum current 100 A VGE Gate-emitter voltage ± 20 V Diode RMS forward current at Tc=25°C 30 A Total dissipation at TC = 25°C 250 W – 55 to 150 °C ICM (2) IF PTOT Tj Tstg Operating junction temperature Storage temperature 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulse width limited by max junction temperature Table 2. Symbol Thermal resistance Parameter Min. Typ. Max. Unit Thermal resistance junction-case IGBT 0.48 °C/W Thermal resistance junction-case diode 1.5 °C/W Thermal resistance junction-ambient 62.5 °C/W Rthj-case Rthj-amb 3/13 Electrical characteristics 2 STGW30NC60VD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter Test conditions VBR(CES) Collector-emitter breakdown IC = 1mA, VGE = 0 voltage VCE(SAT) Collector-emitter saturation voltage VGE=15V, IC=20A,Tj=25°C Gate threshold voltage VCE= VGE, IC= 250µA ICES Collector-emitter leakage current (VGE = 0) VCE = Max rating,Tc=25°C IGES VGE(th) gfs Table 4. Symbol Cies Coes Cres Qg Qge Qgc 4/13 Static Min. Typ. Max. Unit 600 V 1.8 1.7 2.5 V V 5.75 V VCE= Max rating, Tc=125°C 250 1 µA mA Gate-emitter leakage current (VCE = 0) VGE = ± 20V, VCE = 0 ±100 nA Forward transconductance VCE = 15V, IC= 20A VGE=15V, IC=20A,Tj=125°C 3.75 15 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1 MHz, VGE= 0 VCE = 390V, IC = 20A, VGE = 15V, (see Figure 17) Min. Typ. Max 2200 225 50 100 16 45 Unit pF pF pF 140 nC nC nC STGW30NC60VD Table 5. Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Current rise time Turn-on current slope VCC=390 V, IC= 20A, Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Min. RG=3.3Ω, VGE=15V Tj=25°C (see Figure 16) VCC=390 V, IC= 20A, RG=3.3Ω, VGE=15V Tj=125°C (see Figure 16) VCC=390 V, IC= 20A, RG=3.3Ω, VGE=15V Tj=25°C (see Figure 16) VCC=390 V, IC= 20A, RG=3.3Ω, VGE=15V Tj=125°C (see Figure 16) Typ. Max. Unit 31 11 1600 ns ns A/µs 31 11.5 1500 ns ns A/µs 28 100 75 ns ns ns 66 150 130 ns ns ns Switching energy (inductive load) Parameter Eon (1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses Eon (1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses Test conditions Min VCC=390 V, IC= 20A, RG=3.3Ω, VGE=15V, Tj= 25°C (see Figure 18) VCC=390 V, IC= 20A, Typ. Max Unit 220 330 550 300 450 750 µJ µJ µJ 450 770 1220 RG=3.3Ω, VGE=15V, Tj= 125°C (see Figure 18) µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 18. Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) Table 7. Symbol Collector-emitter diode Parameter Test conditions Min Typ. Max Unit 2.0 V V Vf Forward on-voltage If = 10A If = 10A, Tj = 125°C 1.3 1 trr Reverse recovery time Reverse recovery charge Reverse recovery current If = 20A, VR = 40V, Tj = 25°C, di/dt =100A/µs 44 66 3 ns nC A 88 237 5.4 ns nC A Qrr Irrm trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current (see Figure 19) If = 20A, VR = 40V, Tj = 125°C, di/dt =100A/µs (see Figure 19) 5/13 Electrical characteristics STGW30NC60VD 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Collector-emitter on voltage vs collector current Figure 6. Normalized gate threshold vs temperature 6/13 STGW30NC60VD Electrical characteristics Figure 7. Normalized breakdown voltage vs temperature Figure 8. Gate charge vs gate-emitter voltage Figure 9. Capacitance variations Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/13 Electrical characteristics Figure 13. Thermal impedance Figure 15. Emitter-collector diode characteristics 8/13 STGW30NC60VD Figure 14. Turn-off SOA STGW30NC60VD 3 Test circuit Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveforms Figure 19. Diode recovery times waveform 9/13 Package mechanical data 4 STGW30NC60VD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW30NC60VD Package mechanical data TO-247 MECHANICAL DATA DIM. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Diam MIN. 4.90 2.35 0.6 1.2 mm. TYP MAX. 5.16 2.45 0.76 1.33 MIN. 0.193 0.093 0.024 0.047 3 2 1.9 3.04 2.13 3.2 0.075 0.120 16.03 21.09 4.45 19.18 20.31 41.40 6.30 3 0.621 0.820 0.155 0.737 0.789 1.609 0.238 3.66 0.140 0.084 0.126 0.429 0.078 5° 60° 5° 60° 3.56 MAX. 0.203 0.096 0.030 0.052 0.118 0.078 10.90 15.77 20.83 3.93 18.72 20.04 40.88 6.04 2 inch TYP. 0.631 0.830 0.175 0.755 0.800 1.630 0.248 0.118 0.144 11/13 Revision history 5 STGW30NC60VD Revision history Table 8. 12/13 Revision history Date Revision Changes 12-Feb-2007 1 First release 19-Feb-2007 2 Figure 5. has been updated STGW30NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13