STMICROELECTRONICS STGW30NC60VD

STGW30NC60VD
N-channel 40A - 600V - TO-247
Very fast switching PowerMESH™ IGBT
General features
Type
VCES
STGW30NC60VD 600V
VCE(sat)
(Max)@ 25°C
IC
@100°C
<2.5V
40A
■
High current capability
■
High frequency operation up to 50KHz
■
Very soft ultra fast recovery antiparallel diode
■
New generation products with tighter
parameter distribution
TO-247
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “V” identifies a family
optimized for high frequency.
Internal schematic diagram
Applications
■
High frequency inverters, UPS
■
Motor drivers
■
SMPS and PFC in both hard switch and
resonant topologies
Order code
Part number
Marking
Package
Packaging
STGW30NC60VD
GW30NC60VD
TO-247
Tube
February 2007
Rev 2
1/13
www.st.com
13
Contents
STGW30NC60VD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
................................................ 9
STGW30NC60VD
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC(1)
Collector current (continuous) at 25°C
80
A
IC (1)
Collector current (continuous) at 100°C
40
A
Collector current (pulsed)
100
A
ICL
Turn-off soa minimum current
100
A
VGE
Gate-emitter voltage
± 20
V
Diode RMS forward current at Tc=25°C
30
A
Total dissipation at TC = 25°C
250
W
– 55 to 150
°C
ICM (2)
IF
PTOT
Tj
Tstg
Operating junction temperature
Storage temperature
1. Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = ----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
2. Pulse width limited by max junction temperature
Table 2.
Symbol
Thermal resistance
Parameter
Min.
Typ.
Max.
Unit
Thermal resistance junction-case IGBT
0.48
°C/W
Thermal resistance junction-case diode
1.5
°C/W
Thermal resistance junction-ambient
62.5
°C/W
Rthj-case
Rthj-amb
3/13
Electrical characteristics
2
STGW30NC60VD
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
Parameter
Test conditions
VBR(CES)
Collector-emitter breakdown
IC = 1mA, VGE = 0
voltage
VCE(SAT)
Collector-emitter saturation
voltage
VGE=15V, IC=20A,Tj=25°C
Gate threshold voltage
VCE= VGE, IC= 250µA
ICES
Collector-emitter leakage
current (VGE = 0)
VCE = Max rating,Tc=25°C
IGES
VGE(th)
gfs
Table 4.
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
4/13
Static
Min.
Typ.
Max. Unit
600
V
1.8
1.7
2.5
V
V
5.75
V
VCE= Max rating, Tc=125°C
250
1
µA
mA
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20V, VCE = 0
±100
nA
Forward transconductance
VCE = 15V, IC= 20A
VGE=15V, IC=20A,Tj=125°C
3.75
15
S
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
VCE = 25V, f = 1 MHz, VGE= 0
VCE = 390V, IC = 20A,
VGE = 15V,
(see Figure 17)
Min.
Typ.
Max
2200
225
50
100
16
45
Unit
pF
pF
pF
140
nC
nC
nC
STGW30NC60VD
Table 5.
Symbol
td(on)
tr
(di/dt)onf
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Symbol
Electrical characteristics
Switching on/off (inductive load)
Parameter
Test conditions
Turn-on delay time
Current rise time
Turn-on current slope
VCC=390 V, IC= 20A,
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Min.
RG=3.3Ω, VGE=15V
Tj=25°C (see Figure 16)
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V
Tj=125°C (see Figure 16)
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V
Tj=25°C (see Figure 16)
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V
Tj=125°C (see Figure 16)
Typ.
Max.
Unit
31
11
1600
ns
ns
A/µs
31
11.5
1500
ns
ns
A/µs
28
100
75
ns
ns
ns
66
150
130
ns
ns
ns
Switching energy (inductive load)
Parameter
Eon (1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon (1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
Min
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V,
Tj= 25°C (see Figure 18)
VCC=390 V, IC= 20A,
Typ.
Max
Unit
220
330
550
300
450
750
µJ
µJ
µJ
450
770
1220
RG=3.3Ω, VGE=15V,
Tj= 125°C
(see Figure 18)
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 18. Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
Table 7.
Symbol
Collector-emitter diode
Parameter
Test conditions
Min
Typ.
Max
Unit
2.0
V
V
Vf
Forward on-voltage
If = 10A
If = 10A, Tj = 125°C
1.3
1
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 20A, VR = 40V,
Tj = 25°C, di/dt =100A/µs
44
66
3
ns
nC
A
88
237
5.4
ns
nC
A
Qrr
Irrm
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
(see Figure 19)
If = 20A, VR = 40V,
Tj = 125°C,
di/dt =100A/µs
(see Figure 19)
5/13
Electrical characteristics
STGW30NC60VD
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance
Figure 4.
Collector-emitter on voltage vs
temperature
Figure 5.
Collector-emitter on voltage vs
collector current
Figure 6.
Normalized gate threshold vs
temperature
6/13
STGW30NC60VD
Electrical characteristics
Figure 7.
Normalized breakdown voltage vs
temperature
Figure 8.
Gate charge vs gate-emitter voltage
Figure 9.
Capacitance variations
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
7/13
Electrical characteristics
Figure 13. Thermal impedance
Figure 15. Emitter-collector diode
characteristics
8/13
STGW30NC60VD
Figure 14. Turn-off SOA
STGW30NC60VD
3
Test circuit
Test circuit
Figure 16. Test circuit for inductive load
switching
Figure 17. Gate charge test circuit
Figure 18. Switching waveforms
Figure 19. Diode recovery times waveform
9/13
Package mechanical data
4
STGW30NC60VD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STGW30NC60VD
Package mechanical data
TO-247 MECHANICAL DATA
DIM.
A
D
E
F
F1
F2
F3
F4
G
H
L
L1
L2
L3
L4
L5
M
V
V2
Diam
MIN.
4.90
2.35
0.6
1.2
mm.
TYP
MAX.
5.16
2.45
0.76
1.33
MIN.
0.193
0.093
0.024
0.047
3
2
1.9
3.04
2.13
3.2
0.075
0.120
16.03
21.09
4.45
19.18
20.31
41.40
6.30
3
0.621
0.820
0.155
0.737
0.789
1.609
0.238
3.66
0.140
0.084
0.126
0.429
0.078
5°
60°
5°
60°
3.56
MAX.
0.203
0.096
0.030
0.052
0.118
0.078
10.90
15.77
20.83
3.93
18.72
20.04
40.88
6.04
2
inch
TYP.
0.631
0.830
0.175
0.755
0.800
1.630
0.248
0.118
0.144
11/13
Revision history
5
STGW30NC60VD
Revision history
Table 8.
12/13
Revision history
Date
Revision
Changes
12-Feb-2007
1
First release
19-Feb-2007
2
Figure 5. has been updated
STGW30NC60VD
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13/13