STGF19NC60WD N-channel 600V - 7A - TO-220 Ultra fast PowerMESH™ IGBT PRELIMINARY DATA Features Type VCES STGF19NC60WD 600V ■ VCE(sat) IC @100°C (max)@25°C < 2.5V 7A 3 High frequency operation 1 ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode 2 TO-220FP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application. Internal schematic diagram Applications ■ High frequency motor controls, inverters, UPS ■ HF, SMPS and PFC in both hard switch and resonant topologies Order code Part number Marking Package Packaging STGF19NC60WD GF19NC60WD TO-220 Tube May 2007 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/14 www.st.com 14 Contents STGF19NC60WD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STGF19NC60WD 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at TC = 25°C 14 A IC(1) Collector current (continuous) at TC = 100°C 7 A Collector current (pulsed) 35 A Diode RMS forward current at TC = 25°C 12 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25°C 32 W Tstg Storage temperature – 55 to 150 °C Value Unit 4 °C/W 62.5 °C/W ICL (2) IF Tj Operating junction temperature 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp=480V, Tj=150°C, RG=10Ω, VGE=15V Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 3/14 Electrical characteristics 2 STGF19NC60WD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation VGE= 15V, IC= 12A voltage VGE= 15V, IC=12A,Tc=125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C IGES gfs Table 4. Symbol Cies Coes Cres Qg Qge Qgc 4/14 Static Test conditions IC= 1mA, VGE= 0 Min. Typ. Max. 600 Unit V 2.1 1.8 2.5 V V 5.75 V VCE= Max rating,TC= 125°C 150 1 µA mA Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA Forward transconductance VCE = 15V, IC= 12A 3.75 10 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 5A, VGE = 15V, Figure 16 Min. Typ. Max. Unit 1180 130 26 pF pF pF 53 10 21 nC nC nC STGF19NC60WD Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions Min. VCC = 390V, IC = 12A RG= 10Ω, VGE= 15V, Figure 17 VCC = 390V, IC = 12A RG= 10Ω, VGE= 15V, Tj = 125°C Figure 17 VCC = 390V, IC = 12A RG= 10Ω, VGE= 15V, Figure 17 VCC = 390V, IC = 12A RG= 10Ω, VGE= 15V, Tj = 125°C Figure 17 Typ. Max. Unit 25 7 1600 ns ns A/µs 25 8 1400 ns ns A/µs 22 90 43 ns ns ns 47 127 77 ns ns ns Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 12A RG= 10Ω, VGE= 15V, Figure 17 VCC = 390V, IC = 12A RG= 10Ω, VGE= 15V, Tj = 125°C Figure 17 Min. Typ. Max. Unit 81 125 206 µJ µJ µJ 161 255 416 µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 15 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics Table 7. Symbol Collector-emitter diode Parameter Vf Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm trr Qrr Irrm 6/14 STGF19NC60WD Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 12A If = 12A, Tj = 125°C If = 12A,VR = 50V, Tj = 25°C, di/dt = 100 A/µs Figure 18 If = 12A,VR = 50V, Tj =125°C, di/dt = 100A/µs Figure 18 Min. Typ. Max. Unit 1.9 1.5 2.5 V V 31 30 2 ns nC A 59 102 4 ns nC A STGF19NC60WD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 7/14 Electrical characteristics STGF19NC60WD Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 8/14 STGF19NC60WD Figure 13. Turn-off SOA Electrical characteristics Figure 14. Emitter-collector diode characteristics 9/14 Test circuit 3 STGF19NC60WD Test circuit Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit Figure 17. Switching waveform Figure 18. Diode recovery time waveform 10/14 STGF19NC60WD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGF19NC60WD TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/14 L5 1 2 3 L4 STGF19NC60WD 5 Revision history Revision history Table 8. Revision history Date Revision Changes 13-Oct-2006 1 Initial release. 08-May-2007 2 Corrected value on Table 1, Table 2 13/14 STGF19NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. 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