STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT General features TYPE VCES VCE(sat) STGE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C ■ High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current ■ Low gate charge ■ High current capability ISOTOP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz). Internal schematic diagram Applications ■ Low frequency motor controls ■ Aluminum welding equipment Order codes Part number Marking Package Packaging STGE200NB60S GE200NB60S ISOTOP Tube November 2006 Rev 8 1/13 www.st.com 13 Contents STGE200NB60S Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/13 ................................................ 9 STGE200NB60S 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V VGE Gate-emitter voltage ±20 V IC Collector current (continuous) at TC = 25°C 200 A IC Collector current (continuous) at TC = 100°C 150 A Collector current (pulsed) 400 A Total dissipation at TC = 25°C 600 W Derating factor 4.8 W/°C 2500 V – 55 to 150 °C Value Unit 0.208 °C/W °C/W 30 °C/W ICM (1) PTOT VISO Insulation winthstand voltage (DC) Tstg Storage temperature Tj 1. Parameter Operating junction temperature Pulse width limited by safe operating area Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 3/13 Electrical characteristics 2 STGE200NB60S Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage IC = 250µA, VGE = 0 ICES Collector cut-off (VGE = 0) VCE = Max rating, @ 25°C VCE = Max rating, @ 125°C 500 5 µA mA IGES Gate-emitterleakage current (VCE = 0) VGE = ±20V, VCE = 0 ±100 nA VGE(th) Gate threshold voltage VCE = VGE, IC = 250µA 5 V VCE(sat) Collector-emitter saturation VGE = 15V, IC = 100A voltage VGE = 15V, IC=150A,@100°C 1.2 1.2 1.6 V V Forward transconductance 80 gfs Table 4. Symbol 4/13 Static Test conditions Min. Typ. Max. 600 V 3 VCE = 15V , IC = 100A Unit S Dynamic Parameter Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance Qg Qge Qgc ICL Test conditions Min. Typ. Max. Unit VCE = 25V, f = 1MHz, VGE = 0 1560 0 1100 95 pF pF pF Total gate charge Gate-emitter charge Gate-collector charge VCE = 480V, IC = 100A, VGE = 15V 560 70 170 nC nC nC Latching current Vclamp = 480V Tj = 125°C , RG = 10Ω 300 A STGE200NB60S Table 5. Symbol Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Delay time Current rise time Turn-on current slope IC = 100A , VCC = 480V VGE = 15V , RG = 3Ω Tj = 25°C (see Figure 17) 64 112 1840 ns ns A/µs td(on) tr (di/dt)on Dealy time Current rise time Turn-on current slope IC = 100A , VCC = 480V VGE = 15V , RG= 3Ω Tj = 125°C (see Figure 17) 56 114 1800 ns ns A/µs tc tr(Voff) td(off) tf Cross-over time Off voltage rise time Delay time Current fall time IC = 100A , VCC = 480V VGE = 15V , RG = 3Ω Tj = 25°C (see Figure 17) 2.98 1.7 2.4 1.23 µs tc tr(Voff) td(off) tf Cross-over time Off voltage rise time Delay time Current fall time IC = 100A , VCC = 480V VGE = 15V , RG= 3Ω Tj = 125°C (see Figure 17) 4.52 2.6 2.8 1.8 µs Table 6. Symbol 1. Electrical characteristics µs µs µs µs µs µs Switching energy (inductive load) Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching loss Total switching loss VCC = 480V, IC = 100A RG= 3Ω, VGE= 15V, Tj= 25°C (see Figure 17) 11.7 59 70.7 mJ mJ mJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching loss Total switching loss VCC = 480V, IC = 100A RG= 3Ω, VGE= 15V, Tj= 125°C (see Figure 17) 12 92 104 mJ mJ mJ Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17 2. Turn-off losses include also the tail of the collector current. 5/13 Electrical characteristics STGE200NB60S 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. 6/13 Capacitance variations STGE200NB60S Electrical characteristics Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/13 Electrical characteristics Figure 13. Thermal impedance 8/13 STGE200NB60S Figure 14. Turn-off SOA STGE200NB60S 3 Test circuit Test circuit Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit Figure 17. Switching waveform Figure 18. Diode recovery time waveform 9/13 Package mechanical data 4 STGE200NB60S Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGE200NB60S Package mechanical data ISOTOP MECHANICAL DATA mm DIM. MIN. A TYP. 11.8 inch MAX. MIN. TYP. 12.2 0.466 MAX. 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 8.2 0.307 0.157 N 4 O 7.8 0.157 0.322 A G B O F E H D N J K C L M 11/13 Revision history 5 STGE200NB60S Revision history Table 7. 12/13 Revision history Date Revision Changes 28-Feb-2005 6 Complete version 26-Jul-2006 7 New template 03-Nov-2006 8 New value inserted on Table 1.: Absolute maximum ratings STGE200NB60S Please Read Carefully: Information in this document is provided solely in connection with ST products. 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