STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH™ IGBT General features VCES VCE(sat) @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type ■ Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven) ■ Low gate charge ■ Ideal for soft switching application Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. TO-247 Internal schematic diagram Applications ■ Induction heating Order codes Part number Marking Package Packaging STGW30NC120HD GW30NC120HD TO-247 Tube January 2007 Rev 8 1/13 www.st.com 13 Contents STGW30NC120HD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 9 STGW30NC120HD 1 Electrical ratings Electrical ratings Table 1. Symbol Parameter Value Unit 1200 V VCES Collector-emitter voltage (VGS = 0) IC (1) Collector current (continuous) at 25°C 60 A IC (1) Collector current (continuous) at 100°C 30 A ICL (2) Collector current (pulsed) 135 A VGE Gate-emitter voltage ±25 V PTOT Total dissipation at TC = 25°C 220 W If Diode RMS forward current at TC = 25°C 30 A Tj Operating junction temperature –55 to 150 °C Value Unit Tstg 1. Absolute maximum ratings Storage temperature Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp=960V, Tj=125°C, RG=10Ω, VGE=15V Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case 0.57 °C/W Rthj-amb Thermal resistance junction-ambient (diode) 1.6 °C/W Rthj-amb Thermal resistance junction-ambient (IGBT) 50 °C/W 3/13 Electrical characteristics 2 STGW30NC120HD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(SAT) Collector-emitter saturation VGE= 15V, IC= 20A, Tj= 25°C voltage VGE= 15V, IC= 20A, Tj=125°C Test conditions IC = 1mA, VGE = 0 Gate threshold voltage VCE= VGE, IC= 250µA ICES Collector-emitter leakage current (VCE = 0) VGE =Max rating,Tc=25°C IGES Gate-emitter leakage current (VCE = 0) VGE =± 20V , VCE = 0 Forward transconductance VCE = 25V, IC= 20A VGE(th) gfs Table 4. Symbol Cies Coes Cres Qg Qge Qgc 4/13 Static Min. Typ. Max. 1200 Unit V 2.2 2.0 3.75 VGE =Max rating, Tc=125°C 2.75 V V 5.75 V 500 10 µA mA ± 100 nA 14 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1 MHz, VGE=0 VCE = 960V, IC= 20A,VGE=15V Min. Typ. Max. 2510 175 30 110 16 49 Unit pF pF pF 120 nC nC nC STGW30NC120HD Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Symbol Eon (1) Eoff (2) Ets Eon (1) Eoff (2) Ets 1. Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Current rise time Turn-on current slope VCC = 960V, IC = 20A Turn-on delay time Current rise time Turn-on current slope VCC = 960V, IC = 20A Off voltage rise time Turn-off delay time Current fall time VCC = 960V, IC = 20A Off voltage rise time Turn-off delay time Current fall time VCC = 960V, IC = 20A Min. RG= 10Ω, VGE= 15V, Tj=25°C (see Figure 16) RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 16) RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 16) RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 16) Typ. Max. Unit 29 11 1820 ns ns A/µs 27 14 1580 ns ns A/µs 90 275 312 ns ns ns 150 336 592 ns ns ns Switching energy (inductive load) Parameter Test conditions Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960V, IC = 20A Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960V, IC = 20A Min. RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 16) RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 16) Typ. Max. Unit 1660 4438 6098 µJ µJ µJ 3015 6900 9915 µJ µJ µJ Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 7. Symbol Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit 2.5 V V Vf Forward on-voltage If = 20A, Tj = 25°C If = 20A, Tj = 125°C 1.9 1.7 trr Reverse recovery time Reverse recovery charge Reverse recovery current If = 20A, VR = 27V, Tj = 125°C, di/dt = 100A/µs 152 722 9 Qrr Irrm (see Figure 19) ns nC A 5/13 Electrical characteristics 2.1 6/13 STGW30NC120HD Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs. temperature Figure 5. Gate charge vs. gate-source voltage Figure 6. Capacitance variations STGW30NC120HD Electrical characteristics Figure 7. Normalized gate threshold voltage vs. temperature Figure 8. Figure 9. Normalized breakdown voltage vs. temperature Figure 10. Switching losses vs. temperature Figure 11. Switching losses vs. gate resistance Collector-emitter on voltage vs. collector current Figure 12. Switching losses vs. collector current 7/13 Electrical characteristics Figure 13. Thermal Impedance Figure 15. Emitter-collector diode characteristics 8/13 STGW30NC120HD Figure 14. Turn-off SOA STGW30NC120HD 3 Test circuit Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform 9/13 Package mechanical data 4 STGW30NC120HD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW30NC120HD Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 11/13 Revision history 5 STGW30NC120HD Revision history Table 8. 12/13 Revision history Date Revision Changes 23-Nov-2005 1 First issue. 17-Mar-2006 2 Complete version 05-May-2006 3 Modified value on Table 1.: Absolute maximum ratings 30-May-2006 4 New values onTable 2: Thermal resistance 23-Jun-2006 5 Modified value on Table 3.: Static 07-Sep-2006 6 Modified TJ temperature range to 150°C in Table 1.: Absolute maximum ratings 14-Nov-2006 7 Modified Figure 4. and Figure 8. 26-Jan-2007 8 Typing error on first page. STGW30NC120HD Please Read Carefully: Information in this document is provided solely in connection with ST products. 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