STI50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V - 50 A - 0.026 Ω Preliminary Data General features VCS(ON) IC 1.3 V 50 A RCS(ON) 0.026 ■ High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz ■ Ultra low Ciss ■ Low dynamic VCS(ON) W 4 1 2 3 I4PAC-4L Applications Internal schematic diagrams ■ Industrial converters ■ Welding Description The STI50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STI50DE100 is designed for use in industrial converters and/or welding equipment. Order codes Part Number Marking Package Packing STI50DE100 STI50DE100 I4PAC-4L Tube January 2007 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 STI50DE100 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STI50DE100 1 Electrical ratings Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit 1000 V VCS(SS) Collector-source voltage (V BS = VGS = 0 V) VBS(OS) Base-source voltage (IC = 0, V GS = 0 V) 40 V VSB(OS) Source-base voltage (IC = 0, V GS = 0 V) 12 V ± 20 V Collector current 50 A Collector peak current (tP < 5ms) 150 A Base current 10 A IBM Base peak current (tP < 5ms) 50 A Ptot Total dissipation at T c = 25°C 83 W VINS Insulation withstand voltage (RMS) from all three leads to external heatsink 2500 V Tstg Storage temperature -40 to 150 °C 150 °C Value Unit 1.5 °C/W VGS IC ICM IB TJ Table 2. Symbol Rthj-case Gate-source voltage Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case __max 3/11 Electrical characteristics 2 STI50DE100 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol Parameter ICS(SS) Collector-source current (VBS = V GS = 0) VCE = 1000V 100 µA IBS(OS) Base-source current (IC = 0, VGS = 0) VBS(OS) = 40V 10 µA ISB(OS) Source-base current (IC = 0, VGS = 0) VSB(OS) = 10V 100 µA IGS(OS) Gate-source leakage VGS = ± 20V 500 nA VCS(ON) Collector-source ON voltage VGS = 10V IC = 50A IB = 10A VGS = 10V_IC = 30A IB = 3A hFE DC current gain VBS(ON) Base Source ON voltage VGS(th) Gate threshold voltage CISS QGS(tot) ts tf ts tf VCSW VCS(dyn) VCS(dyn) 4/11 Electrical characteristics Input capacitance Gate-source charge INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time Maximum collectorsource voltage switched without snubber Test Conditions VGS = 10V_IC = 50A VCS = 1V VGS = 10V_IC = 30A VCS = 1V VGS = 10V_ IC = 50A 3 6 3 VCS = 25V ______f = 1MHz VGS = VCB = 0 VCS = 25V _____VGS = 10V VCB = 0 IC = 50A IC = 25A IB = 5A VGS = 10V VClamp = 800V tp = 4µs RG = 47Ω (see figure 13) IC = 25A IB = 2.5A VGS = 10V VClamp = 800V RG = 47Ω tp = 4µs (see figure 13) RG = 47Ω hFE = 5A IC = 35A VCC = VClamp = 300V V GS = 10V RG = 47Ω IC = 5A IB = 5A Collector-source dynamic voltage VCC = VClamp = 300V V GS = 10V IBpeak = IC = 25A RG = 47Ω 7 13 3.7 V V 4.5 V 2500 pF 60 nC 650 ns 10 ns 430 ns 6 ns 1000 V 5.5 V 4.8 V tpeak = 500ns IC = 5A IBpeak = IC = 25A V V 2.2 1.4 VGS = 10V_ IC = 30A_ IB = 3A VBS = VGS ______IB = 250µA Typ. Max. Unit 1.3 1.1 IB = 10A Collector-source dynamic voltage (500ns) (1 µs) Min. IB = 5A tpeak = 500ns STI50DE100 2.1 Electrical characteristics Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. DC current gain Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage Figure 5. Base-source On voltage Figure 6. Base-source On voltage 5/11 Electrical characteristics Figure 7. Reverse biased safe operting Figure 8. area Figure 9. Dynamic collector-emitter saturation voltage Figure 11. Inductive load switching time 6/11 STI50DE100 Gate threshold voltage vs temperature Figure 10. Inductive load switching time STI50DE100 2.2 Electrical characteristics Test circuits Figure 12. Static VCS(ON) test circuit Figure 13. Inductive load switching and RBSOA test circuit Figure 14. Inductive load turn-on switching and dynamic V CS(ON) test circuit 7/11 Package mechanical data 3 STI50DE100 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STI50DE100 Package mechanical data ISOPLUS I4PAC-4L MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 4.83 A1 2.59 5.21 3 A2 1.17 1.40 b 1.14 1.40 b1 1.60 1.83 b2 2.54 2.79 b3 1.47 1.73 c 0.51 0.74 D 20.62 21.13 E 19.56 e 20.29 3.81 L 19.81 20.83 L1 2.03 2.59 Q 5.33 5.97 R 3.81 4.57 S 16.97 17.48 T 15.24 U 1.65 15.75 2.03 9/11 Revision history 4 STI50DE100 Revision history Table 4. 10/11 Revision history Date Revision 10-Jan-2007 1 Changes Initial release. STI50DE100 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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