STMICROELECTRONICS STI50DE100

STI50DE100
Hybrid Emitter Switched Bipolar Transistor
ESBT® 1000 V - 50 A - 0.026 Ω
Preliminary Data
General features
VCS(ON)
IC
1.3 V
50 A
RCS(ON)
0.026
■
High voltage / high current Cascode
configuration
■
Ultra low equivalent on resistance
■
Very fast-switch up to 150 kHz
■
Ultra low Ciss
■
Low dynamic VCS(ON)
W
4
1
2
3
I4PAC-4L
Applications
Internal schematic diagrams
■
Industrial converters
■
Welding
Description
The STI50DE100 is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STI50DE100 is designed for use in industrial
converters and/or welding equipment.
Order codes
Part Number
Marking
Package
Packing
STI50DE100
STI50DE100
I4PAC-4L
Tube
January 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
STI50DE100
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 5
2.2
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STI50DE100
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum rating
Symbol
Parameter
Value
Unit
1000
V
VCS(SS)
Collector-source voltage (V BS = VGS = 0 V)
VBS(OS)
Base-source voltage (IC = 0, V GS = 0 V)
40
V
VSB(OS)
Source-base voltage (IC = 0, V GS = 0 V)
12
V
± 20
V
Collector current
50
A
Collector peak current (tP < 5ms)
150
A
Base current
10
A
IBM
Base peak current (tP < 5ms)
50
A
Ptot
Total dissipation at T c = 25°C
83
W
VINS
Insulation withstand voltage (RMS) from all three leads to
external heatsink
2500
V
Tstg
Storage temperature
-40 to 150
°C
150
°C
Value
Unit
1.5
°C/W
VGS
IC
ICM
IB
TJ
Table 2.
Symbol
Rthj-case
Gate-source voltage
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
__max
3/11
Electrical characteristics
2
STI50DE100
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Symbol
Parameter
ICS(SS)
Collector-source current
(VBS = V GS = 0)
VCE = 1000V
100
µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0)
VBS(OS) = 40V
10
µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 10V
100
µA
IGS(OS)
Gate-source leakage
VGS = ± 20V
500
nA
VCS(ON)
Collector-source ON
voltage
VGS = 10V IC = 50A IB = 10A
VGS = 10V_IC = 30A IB = 3A
hFE
DC current gain
VBS(ON)
Base Source ON voltage
VGS(th)
Gate threshold voltage
CISS
QGS(tot)
ts
tf
ts
tf
VCSW
VCS(dyn)
VCS(dyn)
4/11
Electrical characteristics
Input capacitance
Gate-source charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Maximum collectorsource voltage switched
without snubber
Test Conditions
VGS = 10V_IC = 50A VCS = 1V
VGS = 10V_IC = 30A VCS = 1V
VGS = 10V_ IC = 50A
3
6
3
VCS = 25V ______f = 1MHz
VGS = VCB = 0
VCS = 25V _____VGS = 10V
VCB = 0
IC = 50A
IC = 25A IB = 5A VGS = 10V
VClamp = 800V
tp = 4µs
RG = 47Ω
(see figure 13)
IC = 25A IB = 2.5A VGS = 10V
VClamp = 800V RG = 47Ω
tp = 4µs
(see figure 13)
RG = 47Ω hFE = 5A IC = 35A
VCC = VClamp = 300V V GS = 10V
RG = 47Ω IC = 5A IB = 5A
Collector-source
dynamic voltage
VCC = VClamp = 300V V GS = 10V
IBpeak = IC = 25A
RG = 47Ω
7
13
3.7
V
V
4.5
V
2500
pF
60
nC
650
ns
10
ns
430
ns
6
ns
1000
V
5.5
V
4.8
V
tpeak = 500ns
IC = 5A
IBpeak = IC = 25A
V
V
2.2
1.4
VGS = 10V_ IC = 30A_ IB = 3A
VBS = VGS ______IB = 250µA
Typ. Max. Unit
1.3
1.1
IB = 10A
Collector-source
dynamic voltage
(500ns)
(1 µs)
Min.
IB = 5A
tpeak = 500ns
STI50DE100
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
DC current gain
Figure 3.
Collector-source On voltage
Figure 4.
Collector-source On voltage
Figure 5.
Base-source On voltage
Figure 6.
Base-source On voltage
5/11
Electrical characteristics
Figure 7.
Reverse biased safe operting Figure 8.
area
Figure 9.
Dynamic collector-emitter
saturation voltage
Figure 11. Inductive load switching time
6/11
STI50DE100
Gate threshold voltage vs
temperature
Figure 10. Inductive load switching time
STI50DE100
2.2
Electrical characteristics
Test circuits
Figure 12. Static VCS(ON) test circuit
Figure 13. Inductive load switching and RBSOA test circuit
Figure 14. Inductive load turn-on switching and dynamic V CS(ON) test circuit
7/11
Package mechanical data
3
STI50DE100
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STI50DE100
Package mechanical data
ISOPLUS I4PAC-4L MECHANICAL DATA
DIM.
mm.
MIN.
TYP
MAX.
A
4.83
A1
2.59
5.21
3
A2
1.17
1.40
b
1.14
1.40
b1
1.60
1.83
b2
2.54
2.79
b3
1.47
1.73
c
0.51
0.74
D
20.62
21.13
E
19.56
e
20.29
3.81
L
19.81
20.83
L1
2.03
2.59
Q
5.33
5.97
R
3.81
4.57
S
16.97
17.48
T
15.24
U
1.65
15.75
2.03
9/11
Revision history
4
STI50DE100
Revision history
Table 4.
10/11
Revision history
Date
Revision
10-Jan-2007
1
Changes
Initial release.
STI50DE100
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