STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh™ Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A STP11NM60FD 600V <0.45Ω 11A STP11NM60FDFP 600V <0.45Ω 11A ■ 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Tight process control and high manufacturing yields 3 1 2 3 2 1 TO-220 TO-220FP 3 1 3 12 D²PAK D²PAK I²PAK Internal schematic diagram Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications ■ Switching application Order codes Part number Marking Package Packaging STB11NM60FD B11NM60FD D²PAK Tape & reel STB11NM60FD-1 B11NM60FD I²PAK Tube STP11NM60FD P11NM60FD TO-220 Tube STP11NM60FDFP P11NM60FDFP TO-220FP Tube July 2006 Rev 9 1/17 www.st.com 17 Contents STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ................................................ 9 STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter TO-220/ TO-220FP D²PAK/I²PAK VDS VDGR VGS Unit Drain-source voltage (vgs = 0) 600 V Drain-gate voltage (RGS = 20 kΩ) 600 V Gate- source voltage ±30 V (1) ID Drain current (continuos) at TC = 25°C 11 11 ID Drain current (continuos) at TC = 100°C 7 7 (1) IDM (2) PTOT A Drain current (pulsed) 44 Total dissipation at TC = 25°C 160 35 W Derating factor 0.88 0.28 W/°C dv/dt (3) Peak diode recovery voltage slope VISO Insulation winthstand voltage (dc) Tstg Storage temperature 44 (1) A 20 A V/ns -- 2500 –65 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD<11A, di/dt<400A/µs, VDD= 80% V(BR)DSS Table 2. Thermal resistance Value Symbol Parameter Unit TO-220 D²PAK/I²PAK Rthj-case Thermal resistance junction-case Max 0.78 TO-220FP 3.57 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit Table 3. Symbol Avalanche data Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 5.5 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 35V) 350 mJ 3/17 Electrical characteristics 2 STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS = 0 Min. Typ. Max. Unit 600 V VDS = Max rating 1 µA VDS=Max rating, TC=125°C 100 µA Gate-body leakage current (VDS = 0) VGS = ±30V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 5.5A 0.40 0.45 W IDSS Zero gate voltage Drain current (VGS = 0) IGSS Table 5. Symbol gfs (1) 3 Dynamic Parameter Forward transconductance Test conditions VDS > ID(on) x RDS(on)max, ID = 5.5A Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq (2) Equivalent output capacitance VGS = 0V, VDS = 0V to 400V RG Gate input resistance f=1 MHz Gate DC Bias= 0 test signal level = 20mV open drain Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS = 25V, f = 1 MHz, VGS = 0 VDD = 400V, ID = 11A, VGS = 10V (see Figure 15) Min. Typ. Max. Unit 5.2 S 900 pF 350 pF 35 pF 100 pF 3 Ω 28 40 nC 7.8 nC 13 nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/17 STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Table 6. Symbol Electrical characteristics Switching times Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 250V, ID = 5.5A RG = 4.7Ω VGS = 10V (see Figure 14) 20 16 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 400V, ID = 11A, RG = 4.7Ω, VGS = 10V (see Figure 16) 10 15 24 ns ns ns Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current 11 A Source-drain current (pulsed) 44 A 1.5 V Forward on voltage ISD = 11A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11A, VDD = 50V di/dt = 100A/µs, (see Figure 19) 140 680 A ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11A, VDD = 50V di/dt = 100A/µs, Tj=150°C (see Figure 19) 260 1600 13 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/17 Electrical characteristics STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Safe operating areafor TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/17 STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Electrical characteristics Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/17 Electrical characteristics STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Figure 13. Source-drain diode forward characteristics 8/17 STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/17 Package mechanical data STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 10/17 STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/17 Package mechanical data STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 4.88 5.28 0.192 0.208 D1 E 8 10 E1 G 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 12/17 STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 13/17 Package mechanical data STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 14/17 MAX. MIN. A 4.40 TYP 4.60 0.173 TYP. MAX. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 0.181 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP 5 Packaging mechanical Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 15/17 Revision history 6 STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Revision history Table 8. 16/17 Revision history Date Revision Changes 09-Sep-2004 6 Preliminary version 08-May-2006 7 D2PAK package inserted 22-May-2006 8 Updated values Table 5: Dynamic 26-Jul-2006 9 New template, no content change STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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