STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh™ II Power MOSFET (with fast diode) Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND 600V 600V 600V 600V 600V < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω 25A 25A 25A(1) 25A 25A 3 3 1 1 TO-220 1 3 2 2 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ 3 12 The world’s best RDS(on)*in TO-220 amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities I2PAK Figure 1. 2 3 1 TO-247 Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB30NM60ND 30NM60ND D²PAK Tape & reel STI30NM60ND 30NM60ND I²PAK Tube STF30NM60ND 30NM60ND TO-220FP Tube STP30NM60ND 30NM60ND TO-220 Tube STW30NM60ND 30NM60ND TO-247 Tube November 2007 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/15 www.st.com 15 Contents STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 6 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220/D2PAK I2PAK / TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 600 VGS Gate- source voltage ±30 V V (1) ID Drain current (continuous) at TC = 25°C 25 ID Drain current (continuous) at TC = 100°C 15.75 15.75(1) A Drain current (pulsed) 100 100(1) A Total dissipation at TC = 25°C 190 40 W Derating factor 1.51 0.24 W/°C IDM (2) PTOT dv/dt(3) Peak diode recovery voltage slope Viso Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Tstg Storage temperature TJ 25 40 -- A V/ns 2500 V –55 to 150 150 °C TO-220 TO-247 TO-220FP D²PAK/I²PAK Unit Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 25A, di/dt ≤ 600A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Table 4. Symbol Maximum lead temperature for soldering purpose 0.66 62.5 50 3.1 °C/W 62.5 °C/W 300 °C Max value Unit Avalanche characteristics Parameter IAS Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) TBD A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) TBD mJ 3/15 Electrical characteristics 2 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Value Symbol Parameter Test conditions Unit Min. Typ. Max. Drain-source breakdown voltage ID = 1mA, VGS = 0 Drain source voltage slope VDD= 480V, ID= 25A, VGS= 10V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 12.5 A 0.11 0.13 Ω Typ. Max. V(BR)DSS dv/dt(1) 600 V 48 3 V/ns 1. Characteristic value at turn off on inductive load Table 6. Symbol (1) Dynamic Parameter Test conditions Min. Unit Forward transconductance VDS = 15 V, ID = 12.5 A TBD Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 3000 600 90 Coss eq.(2) Equivalent output capacitance VGS = 0V, VDS = 0V to 480V TBD pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD =300 V, ID = 12.5A RG = 4.7Ω VGS = 10V (see Figure 7), (see Figure 2) TBD TBD TBD TBD ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480V, ID = 25A, VGS = 10V, (see Figure 3) 100 TBD TBD nC nC nC Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20mV Open drain 1.6 Ω gfs Ciss Coss Crss Rg S pF pF pF 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Table 7. Symbol Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max. Unit 25 100 A A 1.6 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 25A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25A, VDD = 60V di/dt=100A/µs (see Figure 4) TBD TBD TBD ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25A,VDD = 60V di/dt=100A/µs, TJ = 150°C (see Figure 4) TBD TBD TBD ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 5/15 Test circuit STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND 3 Test circuit Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped Inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform 6/15 Figure 3. Figure 7. Gate charge test circuit STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/15 Package mechanical data STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 8/15 Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Package mechanical data TO-220FP mechanical data mm. DIM. Min. A 4.4 inch Typ. Max. Min. 4.6 0.173 Typ. 0.181 Max. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 23 L4 9/15 Package mechanical data STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND TO-262 (I2PAK) mechanical data mm. inch DIM. Min. 10/15 Max. Min. A 4.40 Typ. 4.60 0.173 Typ. 0.181 Max. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Package mechanical data D²PAK mechanical data mm inch Dim Min A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 Typ 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 Max Min 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 10.4 0.393 8 10 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.409 0.334 5.28 15.85 1.4 1.75 3.2 0.4 0° Max 0.315 8.5 4.88 15 1.27 1.4 2.4 Typ 0.192 0.590 0.50 0.055 0.094 0.208 0.625 0.55 0.68 0.126 0.015 4° 11/15 Package mechanical data STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 12/15 TYP 5.50 0.216 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND 5 Packing mechanical data Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 13/15 Revision history 6 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Revision history Table 8. 14/15 Document revision history Date Revision 06-Nov-2007 1 Changes initial release. STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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