STD11NM60N-1 - STB11NM60N-1 STD11NM60N-STP11NM60N-STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh™ Power MOSFET Features VDSS (@TJmax) RDS(on) STB11NM60N-1 650 V < 0.45 Ω 10 A STD11NM60N 650 V < 0.45 Ω 10 A STD11NM60N-1 650 V < 0.45 Ω 10 A STF11NM60N 650 V < 0.45 Ω 10 A(1) STP11NM60N 650 V < 0.45 Ω 10 A Type 3 ID 2 3 1 1 2 TO-220 IPAK 3 1 DPAK 3 1. Limited only by maximum temperature allowed 3 12 I²PAK ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Figure 1. 1 2 TO-220FP Internal schematic diagram Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB11NM60N-1 B11NM60N I²PAK Tube STD11NM60N-1 D11NM60N IPAK Tube STD11NM60N D11NM60N DPAK Tape & reel STP11NM60N P11NM60N TO-220 Tube STF11NM60N F11NM60N TO-220FP Tube October 2007 Rev 3 1/18 www.st.com 18 Contents STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/18 ................................................ 9 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220/I²PAK DPAK/IPAK Unit TO-220FP VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 10 10(1) A ID Drain current (continuous) at TC = 100 °C 6.3 6.3 (1) A IDM (2) Drain current (pulsed) 40 40(1) A PTOT Total dissipation at TC = 25 °C 90 25 W Derating factor 0.8 0.2 W/°C dv/dt (3) VISO TJ Tstg Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;TC = 25 °C) Operating junction temperature Storage temperature 15 V/ns -- 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤10A, di/dt ≤400A/µs, VDD =80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter TO-220 / I²PAK DPAK / IPAK Unit TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max 62.5 °C/W Maximum lead temperature for soldering purposes 300 °C Max value Unit Tl Table 4. Symbol 1.38 5 °C/W Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 3.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 200 mJ 3/18 Electrical characteristics 2 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt(1) 1. Parameter Drain-source breakdown voltage Drain-source voltage slope Test conditions ID = 1 mA, VGS= 0 Min. Typ. VDS = Max rating, IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5 A V/ns 1 10 µA µA ±100 nA 3 4 V 0.37 0.45 Ω Typ. Max. Unit VDS=Max rating,Tc=125°C 2 Unit V 45 VGS =10 V Zero gate voltage drain current (VGS = 0) Max. 600 VDD = 400 V,ID = 5 A, IDSS Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions Min. gfs(1) Forward transconductance VDS =15 V, ID= 5 A 7.5 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =50V, f=1MHz, VGS=0 850 44 5 pF pF pF Equivalent output capacitance VGS=0, VDS =0 V to 480 V 130 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 3.7 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge 31 4.2 15.9 nC nC nC Coss eq.(2) 1. On/off states VDD=480 V, ID = 10 A VGS =10 V (see Figure 19) Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. VDD = 300 V, ID = 5 A, Typ. Max. Unit 22 18.5 50 12 RG = 4.7 Ω, VGS = 10 V (see Figure 18) (see Figure 23) ns ns ns ns Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current Source-drain current (pulsed) 10 40 A A 1.3 V Forward on voltage ISD = 10 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD =10 A, di/dt =100 A/µs, VDD =100 V, TJ = 25 °C (see Figure 20) 340 3.26 19.2 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current VDD =100 V di/dt =100 A/µs, ISD = 10 A TJ = 150 °C (see Figure 20) 460 4.42 19.2 ns µC A Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/18 Electrical characteristics STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / I²PAK Figure 3. Thermal impedance for TO-220 / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK / IPAK Figure 7. 6/18 Thermal impedance for DPAK / IPAK STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Figure 8. Output characteristics Figure 10. Transconductance Figure 9. Electrical characteristics Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/18 Electrical characteristics STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data 4 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/18 Package mechanical data STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N TO-220FP mechanical data mm. DIM. Min. inch Typ. Max. Min. Typ. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L5 L3 L6 F2 H G G1 F F1 L7 L2 12/18 L5 1 23 L4 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-251 (IPAK) mechanical data mm DIM. Min. inch Max. Min. A 2.2 Typ. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 Typ. Max. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 13/18 Package mechanical data STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N DPAK mechanical data mm. inch DIM. Max. Min. A A1 A2 B b4 Min. 2.2 0.9 0.03 0.64 5.2 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 e e1 H L (L1) L2 L4 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 R V2 Typ. 5.1 6.4 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0˚ 0.260 0.185 0.090 4.6 10.1 0.6 Max. 0.200 4.7 2.28 4.4 9.35 1 Typ. 0.039 0.008 8˚ 0˚ 8˚ 0068772-F 14/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-262 (I2PAK) mechanical data mm. inch DIM. Max. Min. A 4.40 Min. Typ. 4.60 0.173 Typ. 0.181 Max. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 15/18 Packaging mechanical data 5 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 16/18 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 03-Aug-2006 1 First release 14-Nov-2006 2 Complete version 02-Oct-2007 3 Figure 8.: Output characteristics has been updated. Added new package (I²PAK) 17/18 STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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