STMICROELECTRONICS THS9001DBVT

THS9001
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SLOS426B – NOVEMBER 2003 – REVISED JANUARY 2007
50 MHz to 350 MHz CASCADEABLE AMPLIFIER
FEATURES
APPLICATIONS
•
•
•
•
•
High Dynamic Range
– OIP3 = 36 dBm
– NF < 4.5 dB
Single Supply Voltage
High Speed
– VS = 3 V to 5 V
– IS = Adjustable
Input / Output Impedance
– 50 Ω
IF Amplifier
– TDMA: GSM, IS-136, EDGE/UWE-136
– CDMA: IS-95, UMTS, CDMA2000
– Wireless Local Loop
– Wireless LAN: IEEE802.11
DESCRIPTION
The THS9001 is a medium power, cascadeable, gain block optimized for high IF frequencies. The amplifier
incorporates internal impedance matching to 50 Ω, and achieves greater than 15-dB input, and output return
loss from 50 MHz to 350 MHz with VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH. Design requires only 2
dc-blocking capacitors, 1 power-supply bypass capacitor, 1 RF choke, and 1 bias resistor.
Functional Block Diagram
VS
THS9001
IF(IN)
R(BIAS)
1
6
2
5
3
4
CIN
IF(OUT)
COUT
L(COL)
C(BYP)
VS
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2007, Texas Instruments Incorporated
THS9001
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SLOS426B – NOVEMBER 2003 – REVISED JANUARY 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
PACKAGED DEVICES (1)
PACKAGE TYPE
THS9001DBVT
Tape and Reel, 250
SOT-23-6
THS9001DBVR
(1)
TRANSPORT MEDIA, QUANTITY
Tape and Reel, 3000
For the most current package and ordering information, see the Package Option Addendum at the end
of this document, or see the TI Web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature (unless otherwise noted) (1)
UNIT
VSS
Supply voltage, GND to VS
VI
Input voltage
5.5 V
GND to VS
Continuous power dissipation
TJ
See Dissipation Ratings
Table
Maximum junction temperature
150°C
TJ
Maximum junction temperature, continuous operation, long term reliability
Tstg
Storage temperature
125°C
-65°C to 150°C
ESD Ratings
(1)
(2)
HBM
2000
CDM
1500
MM
100
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
(2)
DISSIPATION RATING TABLE
POWER RATING (1)
PACKAGE
ΘJC
(°C/W)
ΘJA
(°C/W)
TA≤ 25°C
TA = 85°C
DBV (2)
70.1
216
463 mW
185 mW
(1)
(2)
Power rating is determined with a junction temperature of 125°C. Thermal management of the final PCB should strive to keep the
junction temperature at or below 125°C for best performance.
This data was taken using the JEDEC standard High-K test PCB.
RECOMMENDED OPERATING CONDITIONS
MIN
2
NOM
MAX
UNIT
VSS
Supply voltage
2.7
5
V
TA
Operating free-air temperature,
-40
85
°C
IS
Supply current
100
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ELECTRICAL CHARACTERISTICS
Typical Performance (VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH) (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Gain
OIP3
1-dB compression
Input return loss
Output return loss
Reverse isolation
Noise figure
MIN
TYP
f = 50 MHz
15.8
f = 350 MHz
15.0
f = 50 MHz
35
f = 350 MHz
37
f = 50 MHz
20.6
f = 350 MHz
20.6
f = 50 MHz
15.4
f = 350 MHz
16.6
f = 50 MHz
17
f = 350 MHz
15
f = 50 MHz
20.7
f = 350 MHz
20.7
f = 50 MHz
3.7
f = 350 MHz
4
MAX
UNITS
dB
dBm
dBm
dB
dB
dB
dB
PIN ASSIGNMENT
IF(IN)
1
6
GND
2
5
VS
3
4
BIAS
IF(OUT)
L(COL)
Terminal Functions
Pin Numbers
Name
1
IF(IN)
Description
Signal input
2
GND
Negative power supply input
3
VS
Positive power supply input
4
L(COL)
Output transistor load inductor
5
IF(OUT)
Signal output
6
BIAS
Bias current input
SIMPLIFIED SCHEMATIC
VS
L(COL)
Bias
IF(OUT)
IF(IN)
GND
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TYPICAL CHARACTERISTICS
TABLE OF GRAPHS
FIGURE
IS
S21 Frequency response
1
S22 Frequency response
2
S11 Frequency response
3
S12 Frequency response
4
S21
vs R(Bias)
5
Noise figure
vs Frequency
6
Supply current
vs R(Bias)
7
Output power
vs Input power
8
Adjacent channel (ACPR) and
Alternate channel (AltCPR)
protection ratios
vs Input power
9
OIP2
vs Frequency
10
OIP3
vs Frequency
11
S21 Frequency response
12
S22 Frequency response
13
S11 Frequency response
S12 Frequency response
14
vs Frequency
Noise figure
4
15
16
OIP2
vs Frequency
17
Output power
vs Input power
18
OIP3
vs Frequency
19
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S-Parameters of THS9001 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 Ω, and L(COL) = 68 nH to 470 nH
at room temperature.
S21 FREQUENCY RESPONSE
S22 FREQUENCY RESPONSE
17
0
L(COL) = 470 nH
16
L(COL) = 100 nH
L(COL) = 220 nH
L(COL) = 330 nH
VS = 5 V,
R(BIAS) = 237W,
L(COL) = 68 nH
−5
S22 − dB
S21 − dB
15
14
13
L(COL) = 220 nH
L(COL) = 100 nH
12
−15
L(COL) = 68 nH
11
1M
10 M
100 M
L(COL) = 330 nH
L(COL) = 470 nH
VS = 5 V,
R(BIAS) = 237W,
10
−10
−20
1M
1G
10 M
100 M
1G
f − Frequency − Hz
f − Frequency − Hz
Figure 1.
Figure 2.
S11 FREQUENCY RESPONSE
S12 FREQUENCY RESPONSE
−15
0
VS = 5 V,
R(BIAS) = 237W
L(COL) = 68 nH
−5
L(COL) = 470 nH
−20
L(COL) = 100 nH
L(COL) = 330 nH
L(COL) = 220 nH
−15
−20
−25
S12 − dB
S11 − dB
−10
L(COL) = 330 nH
−25
L(COL) = 220 nH
−30
L(COL) = 470 nH
L(COL) = 100 nH
−30
L(COL) = 68 nH
−35
VS = 5 V,
R(BIAS) = 237W,
−35
−40
1M
10 M
100 M
f − Frequency − Hz
1G
−40
1M
10 M
100 M
1G
f − Frequency − Hz
Figure 3.
Figure 4.
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S-Parameters of THS9001 as mounted on the EVM with VS = 3 V and 5 V, R(BIAS) = various, and L(COL) = 470
nH at room temp.
S21
vs
R(BIAS)
NOISE FIGURE
vs
FREQUENCY
17
5
R(BIAS) = 56.2 , VS = 3 V
4.75
16
VS = 5 V, IS = 99 mA
15
R(BIAS) = 237 ,
VS = 5 V
Noise Figure − dB
S21 − dB
VS = 5 V, IS = 75 mA
4.5
R(BIAS) = 97.7, VS = 3 V
14
R(BIAS) = 340 , VS = 5 V
13
R(BIAS) = 549 VS = 5 V
VS = 3 V, IS = 94 mA
4.25
VS = 5 V, IS = 50 mA
4
VS = 3 V, IS = 49 mA
3.75
VS = 3 V, IS = 70 mA
12
3.5
R(BIAS) = 174 , VS = 3 V
11
3.25
VS = 3 V to 5 V,
L(col) = 470 nH
3
50
10
1G
10 M
100 M
f − Frequency − Hz
1M
350
Figure 5.
Figure 6.
SUPPLY CURRENT
vs
R(BIAS)
OUTPUT POWER
vs
INPUT POWER
22
450
500
VS = 5 V, IS = 99 mA
21
180
20
PO − Output Power − dBm
160
140
120
VS = 5 V
100
80
VS = 3 V
60
250
f − Frequency − MHz
200
I S − Supply Current − mA
150
VS = 5 V, IS = 75 mA
19
VS = 5 V, IS = 50 mA
18
17
16
15
VS = 3 V, IS = 94 mA
14
VS = 3 V, IS = 70 mA
13
12
40
VS = 3 V, IS = 49 mA
11
f = 100 MHz
20
50
150
250
350
R(BIAS) − W
450
550
10
−6
Figure 7.
6
−4
−2
0
2
4
6
8
PI − Input Power − dBm
Figure 8.
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12
14
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ADJACENT CHANNEL (ACPR) and ALTERNATE
CHANNEL (AltCPR) PROTECTION RATIOS
vs INPUT POWER
WCDMA Modulation, f = 184.32 MHz, PAR = 10.4 dB
OIP2
vs
FREQUENCY
-20
-30
50
VS = 5 V
IS = 99 mA
L(col) = 220 nH
L(COL) = 470 nH
ACPR
VS = 3 V,
IS = 94 mA
48
VS = 5 V,
IS = 99 mA
44
OIP2 − dBm
-40
-50
42
VS = 5 V,
IS = 75 mA
40
-60
VS = 3 V,
IS = 70 mA
Source ACPR
38
-70
36
Source AltCPR
-80
-21
-18
-15
-12
-9
-6
-3
0
34
3
VS = 3 V,
IS = 49 mA
100
50
0
VS = 5 V,
IS = 50 mA
150
200
f − Frequency − MHz
Input Power − dBM
Figure 9.
250
300
Figure 10.
OIP3
vs
FREQUENCY
40
L(COL) = 470 nH
VS = 5 V, IS = 99 mA
38
36
OIP3 − dBm
Power Ratio − dB
46
AltCPR
VS = 5 V, IS = 75 mA
34
VS = 3 V, IS = 94 mA
VS = 3 V, IS = 70 mA
32
VS = 5 V, IS = 50 mA
30
28
VS = 3 V, IS = 49 mA
26
24
0
100
200
300
400
500
f − Frequency − MHz
Figure 11.
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THS9001 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 Ω, and L(COL) = 470 nH at 40°C, 25°C, and 85°C.
S21 FREQUENCY RESPONSE
S22 FREQUENCY RESPONSE
17
0
−455C
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
−2
16
−4
255C
15
−6
855C
S22 − dB
S21 − dB
−8
14
13
−10
855C
−12
−14
12
255C
−16
VS = 5 V,
R(BIAS) = 237 W,
L(col) = 470 nH
11
10
1M
10 M
100 M
−18
−455C
−20
1G
1M
100 M
f − Frequency − Hz
Figure 12.
Figure 13.
S11 FREQUENCY RESPONSE
0
1G
S12 FREQUENCY RESPONSE
−15
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
−5
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
−20
−10
−455C
−15
S12 − dB
S11 − dB
10 M
f − Frequency − Hz
855C
−20
−25
255C
−25
855C
−30
−30
−35
−455C
−40
−35
255C
−45
1M
8
10 M
100 M
1G
−40
1M
10 M
100 M
f − Frequency − MHz
f − Frequency − Hz
Figure 14.
Figure 15.
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NOISE FIGURE
vs
FREQUENCY
OIP2
vs
FREQUENCY
48
6
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
5.5
47
855C
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
−455C
5
OIP2 − dBm
Noise Figure − dB
46
255C
4.5
45
255C
855C
44
43
4
42
−455C
3.5
3
41
0
100
200
300
400
40
50
500
100
Figure 17.
OUTPUT POWER
vs
INPUT POWER
OIP3
vs
FREQUENCY
250
300
40
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
f = 100 MHz
255C
39
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
855C
20
38
−455C
255C
19
OIP3 − dBm
PO − Output Power − dBm
200
Figure 16.
22
21
150
f − Frequency − MHz
f − Frequency − MHz
855C
18
37
36
17
35
16
34
15
33
14
−2
0
2
4
6
8
PI − Input Power − dBm
10
12
32
50
−455C
100
150 200
250 300 350 400 450 500
f − Frequency − MHz
Figure 18.
Figure 19.
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TYPICAL CHARACTERISTICS
S-Parameters Tables of THS9001 with EVM De-Embedded
VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH
S21
Frequency
(MHz)
10
S11
Gain (dB)
Phase (deg)
Gain (dB)
1.0
-3.5
-165.0
5.0
11.7
-127.1
10.2
15.8
-150.1
19.7
16.3
50.1
15.9
69.7
S22
S12
Phase (deg)
Gain (dB)
Phase (deg)
Gain (dB)
Phase (deg)
-2.3
-1.1
-2.6
174.8
-64.4
-121.7
-1.5
-14.9
-2.8
140.4
-32.4
123.0
-2.2
-42.3
-5.3
99.8
-23.6
79.5
-170.8
-6.6
-69.3
-10.7
64.5
-21.1
40.7
175.7
-16.2
-90.3
-16.2
33.9
-20.6
14.5
15.8
171.5
-21.1
-95.4
-16.9
26.4
-20.6
9.4
102.4
15.7
165.7
-32.3
-86.5
-17.1
19.9
-20.6
5.3
150.5
15.6
158.2
-28.0
45.9
-16.8
14.7
-20.7
2.1
198.1
15.5
151.1
-21.9
46.8
-16.2
10.8
-20.7
0.1
246.9
15.3
144.1
-18.9
37.2
-15.3
6.0
-20.7
-1.4
307.6
15.2
135.3
-16.0
27.8
-14.2
-1.8
-20.6
-3.9
362.8
15.0
127.8
-14.2
17.4
-13.3
-9.2
-20.6
-5.9
405.0
14.9
121.9
-12.8
10.9
-12.6
-16.0
-20.6
-8.2
452.2
14.7
115.4
-11.6
3.0
-11.8
-23.9
-20.6
-10.8
504.7
14.5
108.4
-10.3
-6.0
-10.9
-33.0
-20.7
-14.2
563.4
14.4
100.3
-8.9
-17.4
-9.8
-45.2
-20.9
-19.3
595.3
14.2
96.0
-8.2
-23.3
-9.2
-52.2
-21.0
-22.6
664.5
14.1
87.0
-6.7
-36.9
-8.0
-68.3
-21.7
-30.5
702.1
14.0
80.9
-5.9
-44.6
-7.3
-79.1
-22.5
-38.6
741.8
13.9
76.5
-5.1
-54.0
-6.8
-91.4
-24.0
-44.9
828.1
13.5
62.2
-4.3
-76.1
-6.3
-113.2
-26.5
-35.0
874.9
13.0
54.0
-4.1
-84.6
-5.9
-126.0
-27.0
-49.0
924.4
12.8
44.9
-3.6
-93.1
-5.1
-136.8
-28.0
-62.9
976.7
11.6
35.9
-3.5
-104.4
-5.3
-157.8
-34.0
-104.4
1031.9
11.1
33.0
-3.4
-115.7
-5.8
-172.3
-37.1
107.9
1090.3
10.4
29.2
-3.3
-122.0
-5.7
-173.4
-37.8
162.5
1151.9
10.3
22.2
-3.0
-131.3
-4.8
179.4
-31.1
169.5
1217.1
9.7
4.7
-2.9
-142.3
-3.9
161.9
-26.3
137.1
1285.9
8.6
0.7
-2.9
-151.7
-3.6
147.6
-22.7
121.9
1358.6
7.3
-8.3
-2.9
-161.2
-3.4
134.6
-20.6
116.5
1435.5
5.8
-14.5
-3.0
-170.1
-3.2
122.6
-18.8
105.2
1516.6
4.6
-22.7
-3.1
-178.6
-3.2
112.1
-17.2
96.0
1602.4
3.2
-28.4
-3.1
173.2
-3.1
101.7
-15.7
87.0
1693.0
1.5
-38.0
-3.1
165.1
-3.0
92.4
-14.3
79.2
1788.8
-0.5
-47.9
-3.1
157.6
-2.9
83.6
-13.1
68.8
1889.9
-2.5
-51.0
-3.2
148.8
-2.7
74.4
-12.4
56.9
1996.8
-4.1
-49.0
-3.4
139.5
-2.3
65.0
-12.2
48.2
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APPLICATION INFORMATION
The THS9001 is a medium power, cascadeable, amplifier optimized for high intermediate frequencies in radios.
The amplifier is unconditionally stable and design requires only 2 dc-blocking capacitors, 1 power-supply bypass
capacitor, 1 RF choke, and 1 bias resistor. Refer to Figure 25 for circuit diagram.
The THS9001 operates with a power supply voltage ranging from 2.5 V to 5.5 V.
The value of R(BIAS) sets the bias current to the amplifier. Refer to Figure 7. This allows the designer to trade-off
linearity versus power consumption. R(BIAS) can be removed without damage to the device.
Component selection of C(BYP), CIN, and COUT is not critical. The values shown in Figure 25 were used for all the
data shown in this data sheet.
The amplifier incorporates internal impedance matching to 50 Ω that can be adjusted for various frequencies of
operation by proper selection of L(COL).
Figure 20 shows the s-parameters of the part mounted on the standard EVM with VS = 5 V, R(BIAS) = 237Ω , and
L(COL) = 470 nH. With this configuration, the part is very broadband, and achieves greater than 15-dB input and
output return loss from 50 MHz to 325 MHz.
17
S11
S22
16
0
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
−5
S21 − dB
−10
14
−15
13
S12
−20
12
S11, S12, S22 − dB
S21
15
−25
11
10
−30
1M
10 M
100 M
1G
f − Frequency − Hz
Figure 20. S-Parameters of THS9001 Mounted on the Standard EVM With VS = 5 V, R(BIAS) = 237 Ω,
and L(COL) = 470 nH
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APPLICATION INFORMATION (continued)
Figure 21 Shows an example of a single conversion receiver architecture and where the THS9001 would
typically be used.
900 MHz − 2 GHz
900 MHz − 2 GHz
Image Rejection
Filter
LNA 2
LNA 1
LO Drive
Amp 1
RX LO
IF Amp 2
IF Amp 1
Mixer
IF SAW
PGA
IF SAW
ADC
LO Drive
Amp 2
THS9001
2x for Diversity
Figure 21. Example Single Conversion Receiver Architecture
Figure 22 shows an example of a dual conversion receiver architecture and where the THS9001 would typically
be used.
900 MHz − 2 GHz
LNA 1
100 MHz − 300 MHz
1st IF Amp
Image Reject
Filter 1st Mixer
1st IF SAW PGA
LNA 2
LO1 Drive LO1 Drive
Amp 2
RX LO 1 Amp 1
20 MHz − 70 MHz
2nd IF Amp1
2nd IF SAW 2nd IF
Amp2
2nd Mixer
Alias Filter
ADC
LO2 Drive LO2 Drive
Amp 1
Amp 2
RX LO2
THS9001
2x for Diversity
Figure 22. Example Dual Conversion Receiver Architecture
Figure 23 shows an example of a dual conversion transmitter architecture and where the THS9001 would
typically be used.
BB
100 MHz − 300 MHz
900 MHz − 2 GHz
1st IF amp
DAC
RX LO1
BB Amp
Alias Filter 1st Mixer
LO1 Drive LO1 Drive
Amp 2
Amp 1
IF SAW
RX LO2
PGA
2nd Mixer
LO2 Drive LO2 Drive
Amp 2
Amp 1
THS9001
2x for Diversity
Figure 23. Example Dual Conversion Transmitter Architecture
12
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THS9001
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SLOS426B – NOVEMBER 2003 – REVISED JANUARY 2007
APPLICATION INFORMATION (continued)
Figure 24 shows the THS9001 and Sawtek #854916 SAW filter frequency response along with the frequency
response of the SAW filter alone. The SAW filter has a center frequency of 140 MHz with 10-MHz bandwidth
and 8-dB insertion loss. It can be seen that the frequency response with the THS9001 is the same as with the
SAW except for a 15-dB gain. The THS9001 is mounted on the standard EVM with VS = 5 V, R(BIAS) = 237 Ω,
and L(COL) = 470 nH. Note the amplifier does not add artifacts to the signal.
SAW + THS90001
SAW
THS9001
RED =
SAW
140 MHz
SAW Only
GREEN =
140 MHz SAW: Sawtek #854916
Figure 24. Frequency Response of the THS9001 and SAW Filter, and SAW Filter Only
VS
THS9001
IF(IN)
CIN
R(BIAS)
1
6
2
5
1 nF
COUT
IF(QUT)
1 nF
3
4
L(COL)
C(BYP)
0.1 mF
VS
Figure 25. THS9001 Recommended Circuit (Used for all Tests)
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THS9001
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SLOS426B – NOVEMBER 2003 – REVISED JANUARY 2007
APPLICATION INFORMATION (continued)
Evaluation Module
Table 1 is the bill of materials, and Figure 26 and Figure 27 show the EVM layout.
Bill Of Materials
ITEM
(1)
DESCRIPTION
1
Cap, 0.1 µF, ceramic, X7R, 50 V
2
Cap, 1000 pF, ceramic, NPO, 100 V
3
Inductor, 470 nH, 5%
4
Resistor, 237 Ω, 1/8 W, 1%
5
Open
6
REF DES
QTY
PART NUMBER (1)
(AVX) 08055C104KAT2A
C1
1
C2, C3
2
(AVX) 08051A102JAT2A
L1
1
(Coilcraft) 0805CS-471XJBC
(Phycomp) 9C08052A2370FKHFT
R1
1
TR1
1
Jack, banana receptance, 0.25" dia.
J3, J4
2
(SPC) 813
7
Connector, edge, SMA PCB jack
J1, J2
2
(Johnson) 142-0701-801
8
Standoff, 4-40 Hex, 0.625" Length
4
(KEYSTONE) 1808
9
Screw, Phillips, 4-40, .250"
4
SHR-0440-016-SN
10
IC, THS9001
1
(TI) THS9001DBV
11
Board, printed-circuit
1
(TI) EDGE # 6453522 Rev.A
U1
The manufacturer's part numbers are used for test purposes only.
Figure 26. EVM Top Layout
14
Figure 27. EVM Bottom Layout
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SLOS426B – NOVEMBER 2003 – REVISED JANUARY 2007
0.085
0.053
0.008
Pin 1
0.040
0.032
0.032
Top View
Figure 28. THS9001 Recommended Footprint (dimensions in inches)
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Jan-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
THS9001DBVR
ACTIVE
SOT-23
DBV
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
THS9001DBVRG4
ACTIVE
SOT-23
DBV
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
THS9001DBVT
ACTIVE
SOT-23
DBV
6
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
THS9001DBVTG4
ACTIVE
SOT-23
DBV
6
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
THS9001DBVR
SOT-23
DBV
6
3000
180.0
THS9001DBVT
SOT-23
DBV
6
250
180.0
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
9.0
3.15
3.2
1.4
4.0
8.0
Q3
9.0
3.15
3.2
1.4
4.0
8.0
Q3
Pack Materials-Page 1
W
Pin1
(mm) Quadrant
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
THS9001DBVR
SOT-23
DBV
6
3000
182.0
182.0
20.0
THS9001DBVT
SOT-23
DBV
6
250
182.0
182.0
20.0
Pack Materials-Page 2
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