MIG200J6CMB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG200J6CMB1W (600V/200A 6in1) High Power Switching Applications Motor Control Applications · Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package. · The electrodes are isolated from the case · Low thermal resistance · VCE (sat) = 2.0 V (typ.) · UL recognized: File No.E87989 · Weight: 385 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND GND GND GND GND GND VS OUT VS OUT W VS OUT V VS OUT VS OUT U VS OUT N P 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 1 2002-07-22 MIG200J6CMB1W Package Dimensions: TOSHIBA 2-123A1A Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2 2002-07-22 MIG200J6CMB1W Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 3 2002-07-22 MIG200J6CMB1W Maximum Ratings (Tj = 25°C) Stage Characteristics Condition Supply voltage Symbol Rating Unit P-N Power terminal VCC 450 V ¾ VCES 600 V IC 200 A Collector-emitter voltage Inverter Collector current Tc = 25°C, DC Forward current Tc = 25°C, DC IF 200 A Collector power dissipation Tc = 25°C, DC PC 1000 W Tj 150 °C ¾ Junction temperature Control supply voltage VD-GND Terminal VD 20 V Input voltage IN-GND Terminal VIN 20 V Fault output voltage FO-GND Terminal VFO 20 V Fault output current FO sink current IFO 10 mA Control Operating temperature ¾ Tc -20~+100 °C Storage temperature Range ¾ Tstg -40~+125 °C VISO 2500 V ¾ 3 N•m Module Isolation voltage AC 1 min Screw torque M5 Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICES VCE (sat) VF Test Condition VCE = 600 V VD = 15 V, IC = 200 A, VIN = 15 V ® 0 V Min Typ. Max Tj = 25°C ¾ ¾ 1 Tj = 125°C ¾ ¾ 10 Tj = 25°C 1.7 2.0 2.4 Tj = 125°C ¾ 2.2 ¾ ¾ 2.2 2.6 ¾ 2.0 2.9 ¾ 0.4 ¾ ¾ 0.2 ¾ ¾ 1.3 2.3 ¾ 0.2 ¾ IF = 200 A, Tj = 25°C ton tc (on) Switching time trr VCC = 300 V, IC = 200 A VD = 15 V, VIN = 3 V « 0 V Tj = 25°C, Inductive load toff (Note 1) tc (off) Unit mA V V ms Note 1: Switching time test circuit & timing chart 4 2002-07-22 MIG200J6CMB1W 2. Control stage (Tj = 25°C) Characteristics Control circuit current Symbol High side ID (H) Low side ID (L) Input on signal voltage VIN (on) Input off signal voltage VIN (off) Test Condition VD = 15 V VD = 15 V Min Typ. Max ¾ 13 17 ¾ 39 51 1.4 1.6 1.8 2.2 2.5 2.8 ¾ 10 12 ¾ ¾ 0.1 Unit mA V Protection IFO (on) Normal IFO (off) Inverter OC VD = 15 V, Tj < = 125°C 320 ¾ ¾ A Short circuit protection trip Inverter level SC VD = 15 V, Tj < = 125°C 320 ¾ ¾ A ¾ 5 ¾ ms 110 118 125 ¾ 98 ¾ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit IGBT ¾ ¾ 0.125 FRD ¾ ¾ 0.195 Compound is applied ¾ 0.013 ¾ Fault output current Over current protection trip level Over current cut-off time toff (OC) Over temperature protection Trip level Reset level OTr Control supply under voltage protection Trip level UV Reset level UVr VD = 15 V VD = 15 V OT Case temperature Fault output pulse width tFO ¾ VD = 15 V mA °C V 3. Thermal resistance (Tc = 25°C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 5 °C/W °C/W 2002-07-22 MIG200J6CMB1W Switching Time Test Circuit Intelligent power module TLP559 P VD 0.1 mF 15 kW OUT IN VS 47 mF 15 V GND GND U (V, W) VCC VD IF = 16mA 0.1 mF 15 kW OUT IN PG VS 47 mF 15 V GND N GND Timing Chart Input pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% toff 10% 10% tc (off) ton 6 20% Irr trr 10% tc (on) 2002-07-22 MIG200J6CMB1W 4. Recommended conditions for application Characteristics Symbol Supply voltage VCC Test Condition P-N Power terminal Min Typ. Max Unit ¾ 300 400 V 13.5 15 16.5 V Control supply voltage VD VD-GND Signal terminal Carrier frequency fc PWM Control ¾ ¾ 20 kHz Switching time test circuit (See page.6) 4 ¾ ¾ ms Dead time (Note 2) tdead Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 7 2002-07-22 MIG200J6CMB1W IC – VCE IC – VCE 400 400 VD = 17 V (A) 13 V 15 V 300 13 V IC 15 V Collector current Collector current IC (A) VD = 17 V 300 200 100 200 100 Common emitter Common emitter Tj = 25°C 0 0 1 2 3 Collector-emitter voltage VCE Tj = 125°C 0 0 4 (V) 1 Switching time – IC (ms) Switching time (ms) Switching time ton ton toff tc (off) 0.1 Tj = 25°C toff 1 tc (on) tc (off) 0.1 Tj = 125°C VCC = 300 V VD = 15 V VCC = 300 V VD = 15 V L-LOAD L-LOAD 50 100 150 Collector current IC 200 0.01 0 250 50 (A) IF – VF IC 200 250 (A) trr, Irr – IF Peak reverse recovery current Irr (A) Reverse recovery time trr (´10 ns) (A) 150 100 350 Forward current IF 100 Collector current 400 200 150 100 Common cathode : Tj = 25°C 50 : Tj = 125°C 0 0 (V) Switching time – IC tc (on) 250 VCE 4 10 1 300 3 Collector-emitter voltage 10 0.01 0 2 1 2 Forward voltage 3 VF Irr 10 Common cathode : Tj = 25°C 1 0 4 (V) trr : Tj = 125°C 50 100 Forward current 8 150 IF 200 250 (A) 2002-07-22 MIG200J6CMB1W ID (H) – fc (mA) 500 High side control circuit current ID (H) Over current protection trip level OC (A) OC – Tc 600 400 300 200 100 VD = 15 V 0 0 25 50 75 100 Case temperature Tc 125 150 50 40 30 20 10 VD = 15 V Tj = 25°C 0 0 5 (°C) 10 Carrier frequency fc 20 25 (kHz) Reverse bias SOA 120 400 OC (A) 100 320 IC 80 240 Collector current (mA) ID (L) – fc Low side control circuit current ID (L) 15 60 40 160 80 20 VD = 15 V Tj < = 125°C VD = 15 V Tj = 25°C 0 0 5 10 15 Carrier frequency fc 20 0 0 25 (kHz) 100 200 300 400 Collector-emitter voltage 500 VCE 600 700 (V) Rth (t) – tw Inverter stage Transient thermal resistance Rth (t) (°C/W) 1 Diode 0.1 Transistor 0.01 Tc = 25°C 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 9 2002-07-22 MIG200J6CMB1W Turn on loss - IC Turn off loss - IC (mJ) 100 10 Eoff 10 1 Turn off loss Turn on loss Eon (mJ) 100 VCC = 300 V VD = 15 V 0.1 1 VCC = 300 V VD = 15 V 0.1 L-LOAD L-LOAD : Tj = 25°C : Tj = 25°C : Tj = 125°C 0.01 0 50 100 Collector current 150 IC 200 : Tj = 125°C 0.01 0 250 (A) 50 100 Collector current 10 150 IC 200 250 (A) 2002-07-22 MIG200J6CMB1W RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 11 2002-07-22