MITSUBISHI MIG600J2CMB1W

MIG600J2CMB1W
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG600J2CMB1W (600V/600A 2in1)
High Power Switching Applications
Motor Control Applications
•
Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit
current, overcurrent, undervoltage and overtemperature) into a single package.
•
The electrodes are isolated from the case.
•
Low thermal resistance
•
VCE (sat) = 2.1 V (typ.)
•
UL recognized: File No.E87989
•
Weight: 380 g (typ.)
Equivalent Circuit
1
2
3
4
5
6
7
8
FO GND IN VD
FO GND IN VD
GND VS
GND VS
OUT
OUT
E2
C1
C2/E1
1.
FO (L)
2.
GND (L)
3.
IN (L)
4.
VD (L)
5.
FO (H)
6.
GND (H)
7.
IN (H)
8.
VD (H)
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MIG600J2CMB1W
Package Dimensions
Unit: mm
1.
FO (L)
2.
GND (L)
3.
IN (L)
4.
VD (L)
5.
FO (H)
6.
GND (H)
7.
IN (H)
8.
VD (H)
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MIG600J2CMB1W
Signal Terminal Layout
Unit: mm
1.
FO (L)
2.
GND (L)
3.
IN (L)
4.
VD (L)
5.
FO (H)
6.
GND (H)
7.
IN (H)
8.
VD (H)
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MIG600J2CMB1W
Maximum Ratings (Tj = 25°C)
Stage
Characteristics
Condition
Supply voltage
Symbol
Rating
Unit
P-N power terminal
VCC
450
V
⎯
VCES
600
V
Collector-emitter voltage
Inverter
Collector current
Tc = 25°C, DC
IC
600
A
Forward current
Tc = 25°C, DC
IF
600
A
Collector power dissipation
Tc = 25°C
PC
2770
W
⎯
Junction temperature
Control
Module
Tj
150
°C
Control supply voltage
VD-GND terminal
VD
20
V
Input voltage
IN-GND terminal
VIN
20
V
Fault output voltage
FO-GND terminal
VFO
20
V
Fault output current
FO sink current
IFO
10
mA
Operating temperature
⎯
Tc
−20~+100
°C
Storage temperature
⎯
Tstg
−40~+125
°C
Isolation voltage
AC 1 min
VISO
2500
V
Screw torque (terminal)
M6
⎯
3
N・m
Screw torque (mounting)
M5
⎯
3
N・m
Electrical Characteristics
1. Inverter stage
Characteristics
Collector cut-off current
Collector-emitter saturation voltage
Forward voltage
Symbol
ICEX
VCE (sat)
VF
Test Condition
VCE = 600 V
VD = 15 V
IC = 600 A
VIN = 15 V → 0 V
Min
Typ.
Max
Tj = 25°C
⎯
⎯
1
Tj = 125°C
⎯
⎯
10
Tj = 25°C
1.8
2.1
2.5
Tj = 125°C
⎯
2.3
⎯
⎯
2.2
2.6
⎯
2.2
3.0
IF = 600 A, Tj = 25°C
ton
tc (on)
Switching time
trr
toff
tc (off)
VCC = 300 V, IC = 600 A
VD = 15 V, VIN = 15 V ↔ 0 V
Tj = 25°C, Inductive load
(Note 1)
⎯
0.4
⎯
⎯
0.2
⎯
⎯
2.1
3.0
⎯
0.35
⎯
Unit
mA
V
V
µs
Note 1: Switching time test circuit & timing chart
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2. Control stage (Tj = 25°C)
Characteristics
Control circuit current
Symbol
High side
ID (H)
Low side
ID (L)
Input on signal voltage
VIN (on)
Input off signal voltage
VIN (off)
Protection
IFO (on)
Normal
IFO (off)
Fault output current
Test Condition
VD = 15 V
VD = 15 V
VD = 15 V
Min
Typ.
Max
⎯
13
17
⎯
13
17
1.4
1.6
1.8
2.2
2.5
2.8
⎯
10
12
⎯
⎯
0.1
Unit
mA
V
mA
Overcurrent protection trip
Inverter
level
OC
VD = 15 V, Tj <
= 125°C
960
⎯
⎯
A
Short-circuit protection
trip level
SC
VD = 15 V, Tj <
= 125°C
960
⎯
⎯
A
µs
Inverter
Overcurrent cut-off time
toff (OC)
Overtemperature
protection
Trip level
OT
Reset level
OTr
Control supply under
voltage protection
Trip level
UV
Reset level
UVr
Fault output pulse width
tFO
VD = 15 V
⎯
5
⎯
110
118
125
⎯
108
⎯
11.0
12.0
12.5
12.0
12.5
13.0
1
2
3
ms
Min
Typ.
Max
Unit
IGBT
⎯
⎯
0.045
FRD
⎯
⎯
0.068
Compound is applied
⎯
0.013
⎯
Case temperature
⎯
VD = 15 V
°C
V
3. Thermal resistance (Tc = 25°C)
Characteristics
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
Rth (j-c)
Rth (c-f)
Test Condition
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°C/W
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MIG600J2CMB1W
Switching Time Test Circuit
Intelligent power module
TLP559 (IGM)
C1
VD
0.1 µF
15 kΩ
OUT
IN
VS
68 µF
15 V
GND
GND
C2/E1
VCC
VD
IF =
16 mA
0.1 µF
15 kΩ
OUT
IN
PG
VS
68 µF
15 V
GND
E2
GND
Timing Chart
Input pulse
15 V
VIN Waveform
2.5 V
1.6 V
0
90% Irr
Irr
IC Waveform
90%
VCE Waveform
10%
toff
10%
tc (off)
10%
ton
20% Irr
trr
10%
tc (on)
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4. Recommended conditions for application
Characteristics
Supply voltage
Symbol
VCC
Test Condition
P-N power terminal
Control supply voltage
VD
VD-GND signal terminal
Carrier frequency
fc
PWM control
Dead time
Switching time test circuit
tdead
(Note 2)
Min
Typ.
Max
Unit
⎯
300
400
V
13.5
15
16.5
V
⎯
⎯
20
kHz
5
⎯
⎯
µs
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
time given above.
Dead Time Timing Chart
15 V
VIN Waveform
0
15 V
VIN Waveform
0
tdead
tdead
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MIG600J2CMB1W
IC – VCE
IC – VCE
1200
1200
VD = 17 V
1000
IC
800
VD = 17 V
(A)
VD = 13 V
VD = 15 V
Collector current
Collector current
IC
(A)
1000
600
400
VD = 13 V
800
VD = 15 V
600
400
200
200
Common emitter
Common emitter
Tj = 125°C
Tj = 25°C
0
0
1
2
3
Collector-emitter voltage
VCE
0
0
4
(V)
1
2
3
Collector-emitter voltage
Switching time – IC
VCE
10
ton
(µs)
toff
1
tc (on)
Switching time
Switching time
(µs)
ton
tc (off)
0.1
Tj = 25°C
VCC = 300 V
VD = 15 V
L-LOAD
100
200
300
400
500
Collector current IC
600
toff
1
tc (on)
tc (off)
0.1
Tj = 125°C
VCC = 300 V
VD = 15 V
L-LOAD
0.01
700
0
100
(A)
200
IF – VF
400
500
600
700
(A)
trr, Irr – IF
Peak reverse recovery current Irr (A)
Reverse recovery time trr (× 10 ns)
1000
(A)
1000
Forward current IF
300
Collector current IC
1200
800
600
400
Common cathode
200
: Tj = 25°C
: Tj = 125°C
0
0
(V)
Switching time – IC
10
0.01
0
4
1
2
Forward voltage
3
VF (V)
4
Irr
100
trr
10
Common cathode
: Tj = 25°C
: Tj = 125°C
1
0
100
200
300
400
Forward current
500
600
700
IF (A)
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MIG600J2CMB1W
OC – Tc
ID – fc
100
(A)
1600
80
ID
1200
1000
Control circuit current
Over current protection trip level
OC
(mA)
1400
800
600
400
60
40
20
VD = 15 V
Tj = 25°C
200
VD = 15 V
0
0
0
25
50
75
100
Case temperature
Tc
125
150
5
0
(°C)
Carrier frequency
Reverse bias SOA
Rth (t) (°C/W)
Transient thermal resistance
Collector current
IC
(A)
OC
800
640
480
320
160
0
0
Tj <
= 125°C
VD = 15 V
200
400
600
Collector-emitter voltage
VCE
800
fc (kHz)
0.3
Diode stage
0.1
0.03
Transistor stage
0.01
0.003
0.001
Tc = 25°C
0.0003
0.001
0.01
0.1
Pulse width
Turn on loss – IC
1
10
tw (s)
Turn off loss – IC
(mJ)
100
10
Eoff
10
Turn off loss
Eon (mJ)
25
1
(V)
100
Turn on loss
20
Rth (t) – tw
1120
960
15
10
1
VCC = 300 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
0.1
0
100
200
300
400
500
Collector current IC (A)
600
700
1
VCC = 300 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
0.1
0
100
200
300
400
500
600
700
Collector current IC (A)
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