TOSHIBA MIG75J7CSB1W

MIG75J7CSB1W
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75J7CSB1W (600V/75A 7in1)
High Power Switching Applications
Motor Control Applications
·
Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against
short-circuit current, over-current, under-voltage and over-temperature) into a single package.
·
The electrodes are isolated from the case
·
Low thermal resistance
·
VCE (sat) = 1.8 V (typ.)
·
UL recognized: File No.E87989
·
Weight: 278 g (typ.)
Equivalent Circuit
20
FO
19
18
IN VD GND
GND VS
FO
17
15
IN VD GND
GND VS
OUT
16
W
FO
14
IN VD GND
GND VS
OUT
13
OUT
V
12 11 10
FO
IN VD GND
GND VS
OUT
U
9
8
7
6
5
4
3
2
1
GND IN FO VD
GND IN FO VD
GND IN FO VD
GND VS
GND VS
GND VS
OUT
OUT
B
OUT
N
P
1.
VD (U)
2.
FO (U)
3.
IN (U)
4.
GND (U)
5.
VD (V)
6.
FO (V)
7.
IN (V)
8.
GND (V)
9.
VD (W)
10.
FO (W)
11.
IN (W)
12.
GND (W)
13.
VD (L)
14.
FO (L)
15.
Open
16.
IN (B)
17.
IN (X)
18.
IN (Y)
19.
IN (Z)
20.
GND (L)
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2001-11-13
MIG75J7CSB1W
Package Dimensions: TOSHIBA 2-108G1A
Unit: mm
1.
VD (U)
2.
FO (U)
3.
IN (U)
4.
GND (U)
5.
VD (V)
6.
FO (V)
7.
IN (V)
8.
GND (V)
9.
VD (W)
10.
FO (W)
11.
IN (W)
12.
GND (W)
13.
VD (L)
14.
FO (L)
15.
Open
16.
IN (B)
17.
IN (X)
18.
IN (Y)
19.
IN (Z)
20.
GND (L)
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MIG75J7CSB1W
Signal Terminal Layout
Unit: mm
1.
VD (U)
2.
FO (U)
3.
IN (U)
4.
GND (U)
5.
VD (V)
6.
FO (V)
7.
IN (V)
8.
GND (V)
9.
VD (W)
10.
FO (W)
11.
IN (W)
12.
GND (W)
13.
VD (L)
14.
FO (L)
15.
Open
16.
IN (B)
17.
IN (X)
18.
IN (Y)
19.
IN (Z)
20.
GND (L)
3
2001-11-13
MIG75J7CSB1W
Maximum Ratings (Tj = 25°C)
Stage
Characteristic
Condition
Supply voltage
Symbol
Rating
Unit
P-N Power terminal
VCC
450
V
¾
VCES
600
V
IC
75
A
Collector-emitter voltage
Inverter
Collector current
Tc = 25°C, DC
Forward current
Tc = 25°C, DC
IF
75
A
Collector power dissipation
Tc = 25°C, DC
PC
460
W
Tj
150
°C
P-N Power terminal
VCC
450
V
¾
VCES
600
V
IC
50
A
VR
600
V
¾
Junction temperature
Supply voltage
Collector-emitter voltage
Tc = 25°C, DC
Collector current
Brake
¾
Reverse voltage
Forward current
Tc = 25°C, DC
IF
50
A
Collector power dissipation
Tc = 25°C
PC
340
W
Tj
150
°C
¾
Junction temperature
Control supply voltage
VD-GND Terminal
VD
20
V
Input voltage
IN-GND Terminal
VIN
20
V
Fault output voltage
FO-GND Terminal
VFO
20
V
Fault output current
FO sink current
IFO
14
mA
Control
Module
Operating temperature
¾
Tc
-20~ + 100
°C
Storage temperature range
¾
Tstg
-40~ + 125
°C
V
Isolation voltage
AC 1 min
VISO
2500
Screw torque (Terminal)
M4
¾
2
Screw torque (Mounting)
M5
¾
3
N・m
Electrical Characteristics
1. Inverter stage
Characteristics
Collector cut-off current
Collector-emitter saturation voltage
Forward voltage
Symbol
ICEX
VCE (sat)
VF
Test Condition
VCE = 600 V
VD = 15 V
IC = 75 A
VIN = 15 V ® 0 V
Min
Typ.
Max
Tj = 25°C
¾
¾
1
Tj = 125°C
¾
¾
10
Tj = 25°C
1.5
1.8
2.2
Tj = 125°C
¾
2.0
¾
¾
1.8
2.2
¾
1.3
2.2
¾
0.25
¾
¾
0.2
¾
¾
1.1
2.1
¾
0.2
¾
IF = 75 A, Tj = 25°C
ton
tc (on)
Switching time
trr
VCC = 300 V, IC = 75 A
VD = 15 V, VIN = 15 V « 0 V
Tj = 25°C, Inductive load
toff
(Note 1)
tc (off)
Unit
mA
V
V
ms
Note 1: Switching time test circuit & timing chart
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2001-11-13
MIG75J7CSB1W
2. Brake stage
Characteristics
Collector cut-off current
Symbol
ICEX
Collector-emitter saturation voltage
VCE (sat)
Reverse current
Forward voltage
Test Condition
Min
Typ.
Max
Tj = 25°C
¾
¾
1
Tj = 125°C
¾
¾
10
Tj = 25°C
¾
1.8
2.2
Tj = 125°C
¾
2.0
¾
Tj = 25°C
¾
¾
1
Tj = 125°C
¾
¾
10
1.5
1.9
2.3
¾
1.3
1.8
¾
0.65
¾
¾
0.8
¾
¾
1.1
2.1
¾
0.2
¾
Min
Typ.
Max
¾
13
17
¾
52
68
1.4
1.6
1.8
2.2
2.5
2.8
¾
10
12
¾
¾
0.1
VD = 15 V, Tj <
= 125°C
120
¾
¾
80
¾
¾
VD = 15 V, Tj <
= 125°C
120
¾
¾
80
¾
¾
¾
5
¾
110
118
125
¾
98
¾
11.0
12.0
12.5
12.0
12.5
13.0
1
2
3
ms
Min
Typ.
Max
Unit
Inverter IGBT
¾
¾
0.270
Inverter FRD
¾
¾
0.313
Brake IGBT
¾
¾
0.360
Brake FRD
¾
¾
0.600
Compound is applied
¾
0.017
¾
VCE = 600 V
VD = 15 V
IC = 50 A
VIN = 15 V ® 0 V
IR
VR = 600 V
VF
IF = 50 A, Tj = 25°C
ton
tc (on)
Switching time
trr
VCC = 300 V, IC = 50 A
VD = 15 V, VIN = 15 V « 0 V
Tj = 25°C, Inductive load
toff
(Note 1)
tc (off)
Unit
mA
V
mA
V
ms
Note 1: Switching time test circuit & timing chart
3. Control stage (Tj = 25°C)
Characteristics
Control circuit current
Symbol
High side
ID (H)
Low side
ID (L)
Input on signal voltage
VIN (on)
Input off signal voltage
VIN (off)
Protection
IFO (on)
Normal
IFO (off)
Fault output current
Over current protection
trip level
Inverter
OC
Brake
Short circuit protection trip Inverter
level
Brake
Over current cut-off time
SC
toff (OC)
Over temperature
protection
Trip level
Reset level
OTr
Control supply under
voltage protection
Trip level
UV
Reset level
UVr
Test Condition
VD = 15 V
VD = 15 V
VD = 15 V
VD = 15 V
Case temperature
tFO
mA
V
OT
Fault output pulse width
Unit
¾
VD = 15 V
mA
A
A
ms
°C
V
4. Thermal resistance (Tc = 25°C)
Characteristics
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
Rth (j-c)
Rth (c-f)
Test Condition
5
°C/W
°C/W
2001-11-13
MIG75J7CSB1W
Switching Time Test Circuit
Intelligent power module
TLP559
P
VD
0.1 mF
15 kW
OUT
IN
VS
10 mF
15 V
GND
GND
U (V, W, B)
VCC
VD
IF =
16mA
0.1 mF
15 kW
OUT
IN
PG
VS
10 mF
15 V
GND
N
GND
Timing Chart
Input pulse
15 V
VIN Waveform
2.5 V
1.6 V
0
90% Irr
Irr
IC Waveform
90%
VCE Waveform
10%
toff
10%
10%
tc (off)
ton
6
20% Irr
trr
10%
tc (on)
2001-11-13
MIG75J7CSB1W
5. Recommended conditions for application
Characteristics
Supply voltage
Symbol
VCC
Test Condition
P-N Power terminal
Min
Typ.
Max
Unit
¾
300
400
V
13.5
15
16.5
V
Control supply voltage
VD
VD-GND Signal terminal
Carrier frequency
fc
PWM Control
¾
¾
20
kHz
Switching time test circuit
(See page.6)
(Note 2)
3
¾
¾
ms
Dead time
tdead
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
time given above.
Dead Time Timing Chart
15 V
VIN Waveform
0
15 V
VIN Waveform
0
tdead
tdead
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2001-11-13
MIG75J7CSB1W
IC – VCE
IC – VCE
150
150
VD = 17 V
13 V
125
125
(A)
15 V
(A)
IC
100
Collector current
IC
Collector current
VD = 17 V
13 V
75
50
25
15 V
100
75
50
25
Common emitter
Common emitter
Tj = 25°C
0
0
1
2
Tj = 125°C
3
Collector-emitter voltage
0
0
4
VCE
(V)
1
2
3
Collector-emitter voltage
Switching time – IC
4
VCE
(V)
Switching time – IC
10
10
5
5
3
3
(ms)
1
Switching time
Switching time
(ms)
ton
ton
toff
0.5
0.3
tc (on)
tc (off)
0.1
Tj = 25°C
0.05
0.01
0
20
40
60
Collector current
IC
80
0.5
tc (on)
0.3
tc (off)
0.1
Tj = 125°C
0.05
VCC = 300 V
VD = 15 V
L-Load
0.03
toff
1
VCC = 300 V
VD = 15 V
L-Load
0.03
0.01
0
100
20
(A)
40
Collector current
IF – VF
IC
100
(A)
Peak reverse recovery current Irr (A)
Peak reverse recovery time trr (´10ns)
100
(A)
125
Forward current IF
80
trr, Irr – IF
150
100
75
50
Common cathode
:Tj = 25°C
:Tj = 125°C
25
0
0
60
1
2
Forward voltage
3
VF
Irr
10
(V)
Common cathode
3
:Tj = 25°C
:Tj = 125°C
1
0
4
trr
30
20
40
Forward current
8
60
80
IF
100
(A)
2001-11-13
MIG75J7CSB1W
OC – TC
ID (H) – fc
(mA)
High side control circuit current ID (H)
Over current protection trip level
OC (A)
300
Inverter stage
200
Brake stage
100
VD = 15 V
0
0
25
50
75
100
Case temperature TC
125
150
30
25
20
15
10
5
VD = 15 V
Tj = 25°C
0
0
5
(°C)
10
Carrier frequency fc
ID (L) – fc
(mA)
15
20
25
(kHz)
Reverse bias SOA
100
140
90
OC
(A)
100
IC
70
60
Collector current
Low side control circuit current ID (L)
120
80
50
40
30
80
60
40
20
VD = 15 V
Tj = 25°C
10
20
Tj <
= 125°C
VD = 15 V
0
0
5
10
15
Carrier frequency fc
20
0
0
25
100
(kHz)
400
500
Collector-emitter voltage
VCE
Tc = 25°C
0.5
Diode
1
Transistor
0.1
0.05
0.03
0.01
0.005
0.003
0.01
0.1
Pulse width
1
tw
600
700
(V)
Tc = 25°C
Diode
0.5
0.3
Transient thermal resistance Rth (t)
Transient thermal resistance Rth (t)
0.3
0.001
0.001
300
Rth (t) – tw Brake stage
1
(°C/W)
(°C/W)
Rth (t) – tw Inverter stage
200
10
(s)
Transistor
0.1
0.05
0.03
0.01
0.005
0.003
0.001
0.001
0.01
0.1
Pulse width
9
1
tw
10
(s)
2001-11-13
MIG75J7CSB1W
Turn off loss - IC
5
5
3
3
(mJ)
10
Eoff
1
0.5
0.3
Turn off loss
Turn on loss Eon
(mJ)
Turn on loss - IC
10
0.1
VCC = 300 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
0.05
0.03
0.01
0
20
40
Collector current
60
IC
80
1
0.5
0.3
0.1
VCC = 300 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
0.05
0.03
0.01
0
100
20
40
Collector current
(A)
10
60
IC
80
100
(A)
2001-11-13
MIG75J7CSB1W
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2001-11-13