MIG100J7CSB1W MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG100J7CSB1W (600V/100A 7in1) High Power Switching Applications Motor Control Applications • Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. • The electrodes are isolated from the case • Low thermal resistance • VCE (sat) = 1.9 V (typ.) • UL recognized: File No.E87989 • Weight: 278 g (typ.) Equivalent Circuit 20 FO 19 18 FO IN VD GND GND VS 17 W 1. VD (U) 8. 15. 15 IN VD GND GND VS OUT 16 FO 14 IN VD GND GND VS OUT 13 OUT V 12 11 10 FO IN VD GND GND VS OUT U 2. FO (U) 3. IN (U) GND (V) 9. VD (W) 10. Open 16. IN (B) 17. 9 8 7 6 5 GND (U) FO (W) 11. IN (X) 18. 3 2 1 GND IN FO VD GND IN FO VD GND IN FO VD GND VS GND VS GND VS OUT OUT B 4. 4 OUT N 5. VD (V) IN (W) 12. GND (W) IN (Y) 19. IN (Z) 6. P FO (V) 7. IN (V) 13. VD (L) 14. FO (L) 20. GND (L) 2004-10-01 1/10 MIG100J7CSB1W Package Dimensions Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 2/10 MIG100J7CSB1W Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 3/10 MIG100J7CSB1W Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Supply voltage VCC 450 V VCES 600 V Collector current Tc = 25°C, DC IC 100 A Forward current Tc = 25°C, DC IF 100 A Collector power dissipation Tc = 25°C, DC PC 590 W ⎯ Supply voltage Tj 150 °C P-N Power terminal VCC 450 V ⎯ VCES 600 V IC 50 A ⎯ VR 600 V IF 50 A Collector-emitter voltage Tc = 25°C, DC Collector current Reverse voltage Forward current Tc = 25°C, DC Collector power dissipation Tc = 25°C, DC ⎯ Junction temperature Control Module Unit ⎯ Junction temperature Brake Rating P-N Power terminal Collector-emitter voltage Inverter Symbol PC 340 W Tj 150 °C VD 20 V Control supply voltage VD-GND Terminal Input voltage IN-GND Terminal VIN 20 V Fault output voltage FO-GND Terminal VFO 20 V Fault output current FO sink current IFO 14 mA Operating temperature ⎯ Tc −20~ + 100 °C Storage temperature Range ⎯ Tstg −40~ + 125 °C VISO 2500 V Isolation voltage AC 1 min Screw torque (Terminal) M4 ⎯ 2 Screw torque (Mounting) M5 ⎯ 3 N･m Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE (sat) VF Test Condition VCE = 600 V VD = 15 V IC = 100 A VIN = 15 V → 0 V Min Switching time trr toff tc (off) Max Tj = 25°C ⎯ ⎯ 1 Tj = 125°C ⎯ ⎯ 10 Tj = 25°C 1.6 1.9 2.3 Tj = 125°C ⎯ 2.1 ⎯ ⎯ 2.1 2.5 ⎯ 1.3 2.2 ⎯ 0.3 ⎯ ⎯ 0.2 ⎯ ⎯ 1.1 2.1 ⎯ 0.2 ⎯ IF = 100 A, Tj = 25°C ton tc (on) Typ. VCC = 300 V, IC = 100 A VD = 15 V, VIN = 15 V ↔ 0 V Tj = 25°C, Inductive load (Note 1) Unit mA V V µs Note 1: Switching time test circuit & timing chart 2004-10-01 4/10 MIG100J7CSB1W 2. Brake stage Characteristics Collector cut-off current Symbol ICEX Collector-emitter saturation voltage VCE (sat) Reverse current Forward voltage Test Condition VCE = 600 V VD = 15 V IC = 50 A VIN = 15 V → 0 V IR VR = 600 V VF IF = 50 A, Tj = 25°C Min tc (on) trr Max Tj = 25°C ⎯ ⎯ 1 Tj = 125°C ⎯ ⎯ 10 Tj = 25°C ⎯ 1.8 2.2 Tj = 125°C ⎯ 2.0 ⎯ Tj = 25°C ⎯ ⎯ 1 Tj = 125°C ⎯ ⎯ 10 1.5 1.9 2.3 ⎯ 1.3 1.8 ⎯ 0.65 ⎯ ⎯ 0.8 ⎯ ⎯ 1.1 2.1 ⎯ 0.2 ⎯ Min Typ. Max ⎯ 13 17 ⎯ 52 68 ton Switching time Typ. VCC = 300 V, IC = 50 A VD = 15 V, VIN = 15 V ↔ 0 V Tj = 25°C, Inductive load toff (Note 1) tc (off) Unit mA V mA V µs Note 1: Switching time test circuit & timing chart 3. Control stage (Tj = 25°C) Characteristics Control circuit current Symbol High side ID (H) Low side ID (L) Input on signal voltage VIN (on) Input off signal voltage VIN (off) Protection IFO (on) Normal IFO (off) Fault output current Over current protection trip level Inverter OC Brake Short circuit protection trip Inverter level Brake Over current cut-off time Over temperature protection Control supply under voltage protection SC toff (OC) Trip level OT Reset level OTr Trip level UV Reset level UVr Fault output pulse width tFO Test Condition VD = 15 V Unit mA 1.4 1.6 1.8 2.2 2.5 2.8 ⎯ 10 12 ⎯ ⎯ 0.1 VD = 15 V, Tj < = 125°C 160 ⎯ ⎯ 80 ⎯ ⎯ VD = 15 V, Tj < = 125°C 160 ⎯ ⎯ 80 ⎯ ⎯ ⎯ 5 ⎯ 110 118 125 ⎯ 98 ⎯ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit Inverter IGBT ⎯ ⎯ 0.210 Inverter FRD ⎯ ⎯ 0.313 Brake IGBT ⎯ ⎯ 0.360 VD = 15 V VD = 15 V VD = 15 V Case temperature ⎯ VD = 15 V V mA A A µs °C V 4. Thermal resistance (Tc = 25°C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Brake FRD ⎯ ⎯ 0.600 Compound is applied ⎯ 0.017 ⎯ 2004-10-01 °C/W °C/W 5/10 MIG100J7CSB1W Switching Time Test Circuit Intelligent power module TLP559 (IGM) P VD 0.1 µF 15 kΩ OUT IN VS 10 µF 15 V GND GND U (V, W, B) VCC VD IF = 16mA 0.1 µF 15 kΩ OUT IN PG VS 10 µF 15 V GND N GND Timing Chart Input pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% toff 10% tc (off) 10% ton 20% Irr trr 10% tc (on) 2004-10-01 6/10 MIG100J7CSB1W 5. Recommended conditions for application Characteristics Supply voltage Symbol VCC Test Condition Max Unit ⎯ 300 400 V 15 16.5 V PWM Control ⎯ ⎯ 20 kHz Switching time test circuit (See page.6) (Note 2) 3 ⎯ ⎯ µs VD VD-GND Signal terminal Carrier frequency fc tdead Typ. 13.5 P-N Power terminal Control supply voltage Dead time Min Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG100J7CSB1W IC – VCE IC – VCE 200 200 VD = 17 V (A) 13 V 15 V Collector current Collector current 150 100 50 15 V 100 50 Common emitter Common emitter Tj = 125°C Tj = 25°C 0 0 1 2 3 Collector-emitter voltage VCE 0 0 4 (V) 1 10 5 5 (µs) 1 toff Switching time (µs) Switching time ton 0.5 tc (on) 0.3 tc (off) 0.1 Tj = 25°C 0.05 (V) 40 20 60 80 Collector current IC 100 ton toff 1 0.5 tc (on) 0.3 tc (off) 0.1 Tj = 125°C 0.05 VCC = 300 V VD = 15 V L-Load 0.03 VCC = 300 V VD = 15 V L-Load 0.03 0.01 0 120 20 (A) 60 40 IF – VF 100 80 Collector current IC 120 (A) trr, Irr – IF 200 100 Peak reverse recovery current Irr (A) Reverse recovery time trr (×10ns) (A) VCE 4 3 3 150 100 50 Common cathode :Tj = 25°C :Tj = 125°C 0 0 3 Switching time – IC 10 0.01 0 2 Collector-emitter voltage Switching time – IC Forward current IF 13 V IC 150 IC (A) VD = 17 V 1 2 Forward voltage 3 VF (V) 4 Irr 30 trr 10 Common cathode 3 :Tj = 25°C :Tj=125°C 1 0 20 40 Forward 60 80 current IF 100 120 (A) 2004-10-01 8/10 MIG100J7CSB1W OC – TC ID (H) – fc (mA) Inverter stage 200 150 Brake stage 100 50 VD = 15 V 0 0 25 50 75 Case temperature 100 TC 125 ID (H) 250 30 25 High side control circuit current Over current protection trip level OC (A) 300 20 150 15 10 5 VD = 15 V Tj = 25°C 0 0 5 (°C) 10 Carrier frequency OC 160 IC (A) 80 140 120 60 40 20 VD = 15 V 10 5 20 15 fc 80 60 40 20 Tj = 25°C 0 0 100 Tj < = 125°C VD = 15 V 0 0 25 100 (kHz) 400 500 Collector-emitter voltage VCE Rth (t) – tw Inverter stage 1 Tc = 25°C 0.5 Diode stage 300 600 700 (V) 1 Tc = 25°C Diode stage 0.5 0.3 Rth (t) 0.3 Transistor stage Transient thermal resistance 0.1 0.05 0.03 0.01 0.005 0.003 0.001 0.001 200 Rth (t) – tw Brake stage (°C/W) (°C/W) (kHz) 180 Carrier frequency Rth (t) fc 25 20 Reverse bias SOA 100 Collector current Low side control circuit current ID (L) (mA) ID (L) – fc Transient thermal resistance 15 0.01 0.1 Pulse width 1 tw (s) 10 Transistor stage 0.1 0.05 0.03 0.01 0.005 0.003 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 2004-10-01 9/10 MIG100J7CSB1W Turn off loss − IC 5 5 3 3 (mJ) 10 Eoff 1 0.5 0.3 0.1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 0.05 0.03 0.01 0 Turn off loss Turn on loss Eon (mJ) Turn on loss − IC 10 20 40 60 80 Collector current IC (A) 100 1 0.5 0.3 0.1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 0.05 0.03 120 0.01 0 20 40 60 80 100 120 Collector current IC (A) 2004-10-01 10/10