MICROWAVE POWER GaAs FET S8836B MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER SUITABLE FOR C-BAND AMPLIFIER P1dB= 29.5 dBm at 8 GHz HIGH GAIN G1dB= 7.5 dB at 8 GHz ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS ( Ta= 25°°C ) CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point P1dB Power Gain at 1dB Compression Point G1dB CONDITION VDS= 10V f = 8 GHz UNIT MIN. TYP. MAX. dBm 28.5 29.5 dB 6.5 7.5 Drain Current IDS A 0.25 0.4 Power Added Efficiency ηadd % 30 ELECTRICAL CHARACTERISTICS ( Ta= 25°°C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITION VDS= 3V IDS= 0.28A VDS= 3V IDS= 5mA VDS= 3V VGS= 0V IGS= -10µA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff UNIT MIN. mS TYP. MAX. 170 V -2.0 -3.5 -5.0 A 0.55 0.7 V -5 °C/W 20 30 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Revised Aug. 2000 S8836B ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS ( Ta= 25°°C ) SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 1.4 Total Power Dissipation (Tc= 25 °C) PT W 7.5 Channel Temperature Tch °C 175 Storage Tstg °C -65 ∼ +175 PACKAGE OUTLINE (2-3K1B) c 2-φ1.6± ±0.1 2.0 MIN. Unit in mm 0.5± ±0.15 d d 2.0 MIN. e c Gate d Source e Drain 2.5± ±0.1 2.3± ±0.1 2.2 MAX. 2-C0.5 0.5± ±0.15 6.1± ±0.1 +0.1 0.1 -0.05 8.7 MAX 0.8± ±0.15 0.53± ±0.2 1.5 MAX. 3.0 MAX HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°°C. 2 S8836B RF PERFORMANCES Output Power vs. Input Power 90 f = 8 GHz VDS=10V IDS≅ 0.25A 31 80 70 Po Po(dBm 50 27 40 ηadd 30 25 20 10 23 0 16 18 20 22 Pin(dBm) 24 26 POWER DISSIPATION vs. CASE TEMPERATURE 6 5 PT(W) 4 3 2 1 0 0 40 80 120 Tc(°°C) 3 160 200 ηadd(%) 60 29