TSM2N7000 60V N-Channel MOSFET SOT-92 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 5 @ VGS = 10V Features ID (mA) 500 Block Diagram ● Fast Switching Speed ● Low Input and Output Leakage Application ● Direct Logic-Level Interface: TTL/CMOS ● Solid-State Relays Ordering Information Part No. Package Packing TSM2N7000CT B0 TSM2N7000CT A3 TO-92 TO-92 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 200 mA IDM 500 mA IS 500 mA Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 75 C Operating Junction Temperature 280 mW +150 o TJ, TSTG -55 to +150 o Symbol Limit TL 10 TJ Operating Junction and Storage Temperature Range 350 C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 357 Unit S o C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. 1/4 Version: A07 TSM2N7000 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 10µA BVDSS 60 -- -- V Gate Threshold Voltage VDS = VGS, ID = 1mA VGS(TH) 0.8 -- 3.0 V Gate Body Leakage VGS = ±15V, VDS = 0V IGSS -- -- ±10 nA Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V IDSS -- -- 1.0 µA -- -- 5.0 -- 7.5 -- Drain-Source On-State Resistance VGS = 10V, ID = 500mA VGS = 5V, ID = 50mA RDS(ON) Ω Forward Transconductance VDS = 15V, ID = 300mA gfs -- 320 -- mS Diode Forward Voltage IS = 200mA, VGS = 0V VSD -- 1.3 1.5 V Ciss -- 60 -- Coss -- 25 -- Crss -- 5 -- tr -- 10 -- tf -- 10 -- Dynamic b Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz pF c Switching Turn-On Rise Time Turn-Off Fall Time VDD = 15V, RL = 30Ω, ID = 500mA, VGEN = 10V, RG = 25Ω Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/4 nS Version: A07 TSM2N7000 60V N-Channel MOSFET TO-92 Mechanical Drawing DIM A B C D E F G H 3/4 TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 Version: A07 TSM2N7000 60V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A07