UNISONIC TECHNOLOGIES CO., LTD 2SC3320 NPN SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability 1 TO-3P *Pb-free plating product number:2SC3320L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC3320-T3P-T 2SC3320L-T3P-T 2SC3320L-T3P-T 1 B Pin Assignment 2 3 C E Package Packing TO-3P Tube (1)Packing Type (1) T: Tube (2)Package Type (2) T3P: TO-3P (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R214-008,B 2SC3320 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC = 25℃) PARAMETER SYMBOL RATINGS UNIT VCBO 500 V VCEO 400 V Collector Emitter Voltage 400 V VCEO(SUS) Emitter Base Voltage VEBO 7 V Collector Current IC 15 A Base Current IB 5 A Power Dissipation PD 80 W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Collector Base Voltage THERMAL DATA PARAMETER Thermal Resistance Junction to Case SYMBOL θJC RATINGS 1.55 UNIT ℃/W ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Switching Time SYMBOL VCBO VCEO VCEO(SUS) VEBO VCE (SAT) VBE (SAT) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=0.2A IEBO=1mA IC=6A, IB=1.2A VCBO=500V VEBO=7V IC=6A, VCE=5V IC=7.5A, IB1 =1.5A, IB2=-3A RL=20Ω, Pw=20µs, Duty ≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 500 400 400 7 TYP MAX 1 1.5 1 1 UNIT V V V V V V mA mA 0.5 1.5 0.15 µs µs µs 10 2 of 5 QW-R214-008,B 2SC3320 NPN SILICON TRANSISTOR SWITCHING TIME TEST CIRCUIT RL=20Ω IB1 IB1 IB2 IC IB2 0.9IC IC 0.1IC PW =20μs tON UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw t STG tF 3 of 5 QW-R214-008,B 2SC3320 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Gain Collector Output Characteristics 3 IC=1A 2A 3A 5A 10A 300 TC=25℃ DC Current Gain, hFE Collector Emitter Voltage, VCE (V) 5 1 0.5 0.3 0.1 VCE=5V 100 50 30 10 TC=150℃ 75℃ 25℃ -50℃ 5 3 0.05 0.03 0.03 0.05 0.1 1 0.3 0.5 1 3 5 0.05 0.1 0.3 0.5 Base Current, I B (A) 30 10 μ 10 Collector Current, I C (A) 0.5 0.3 VCE(SAT) 0.1 0.05 0.03 1 0.3 0.5 3 5 10 20 Collector Current, I C (A) 5 3 s s VBE(SAT) 0.01 0.05 0.1 10 15 Safe Operating Area TC=25℃IC=5IB 1 5 0μ 10 Saturation Voltage, VCE (SAT), VBE (SAT) (V) Base and Collector Saturation Voltage 4 3 3 1 Collector Current, I C (A) PW =1ms DC 1 0.5 0.3 0.1 T C=25℃ 0.05 Single Pulse 0.03 1 3 5 10 30 50 100 300 5001000 Collector Emitter voltage, VCE (V) Switching Time 1.5 Switching Time (µs) 1 t STG 0.5 0.3 t ON 0.1 TC=25℃ 0.05 VCC=150V IC=5I B1 =-2.5IB2 0.03 0.5 1 tF 3 5 10 25 Collector Current, I C (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R214-008,B 2SC3320 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R214-008,B