UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. FEATURES * Pb-free package is available * Collector-Emitter voltage: VCEO = 400V * Pulse collector current to 4A *Pb-free plating product number: T2096L ORDERING INFORMATION Order Number Normal Lead Free Plating T2096-TM3-T T2096L-TM3-T www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd Package TO-251 Pin Assignment 1 2 3 B C E Packing Tube 1 of 4 QW-R213-017,A T2096 NPN SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current DC Collector Current Pulse Collector Current (Note 2) RATINGS UNIT 800 V 800 V 400 V 8 V 1 A 2 A 4 A Ta=25℃ 1 Collector Dissipation PC W Tc=25℃ 15 °C Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test: Pulse Width ≤300μS, Duty Cycle≤10% SYMBOL VCBO VCES VCEO VEBO IB IC ICP ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) ICBO IEBO hFE 1 hFE 2 fT Cob tON tSTG tF TEST CONDITIONS IC =1mA, IE =0 IC =5mA, RBE=∞ IE =1mA, IC =0 IC =1A, IB =0.2A IC =1A, IB =0.2A VCB =400V, IE =0 VEB =5V, IC =0 VCE =5V, IC =1mA VCE =5V, IC =0.2A VCE =10V, IC =0.2A VCB =10V, f =1MHz IC =1.0A, IB1 =0.05A IB2 = -0.5A, RL =200Ω VCC=200V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 800 400 8 TYP MAX 0.8 1.5 10 10 45 120 UNIT V V V V V μA μA 180 20 20 0.5 2.5 0.3 MHz pF μs μs μs 2 of 4 QW-R213-017,A T2096 NPN SILICON TRANSISTOR SWITCHING TIME TEST CIRCUIT IB1 IB2 PW=20μS D. C 1% OUTPUT RB INPUT 50Ω RL VR + 100μF VBE= -5V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw + 470μF VCC=200V 3 of 4 QW-R213-017,A T2096 Collector Current, IC (A) TYPICAL CHARACTERISTICS Collector Current, IC (A) ■ NPN SILICON TRANSISTOR UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R213-017,A