TI THS4032ID

THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
DEVICE
DESCRIPTION
THS4011/12
240-MHz Low Distortion High-Speed Amplifiers
THS4021/2
350-MHz Low Noise High-Speed Amplifiers
THS4081/2
175-MHz Low Power High-Speed Amplifiers
3
6
4
5
NULL
VCC+
OUT
NC
NC – No internal connection
THS4032
D AND DGN PACKAGE
(TOP VIEW)
1OUT
1IN –
1IN +
–VCC
1
8
2
7
3
6
4
5
VCC+
2OUT
2IN–
2IN+
Cross-Section View Showing
PowerPAD Option (DGN)
3
2
1
20 19
NC
NULL
THS4031
FK PACKAGE
(TOP VIEW)
NC
4
18 NC
IN–
5
17 VCC+
NC
6
16 NC
IN+
7
15 OUT
NC
8
14 NC
9
10 11 12 13
NC
Related Devices
7
NC
The THS4031 and THS4032 are ultralow-voltage
noise, high-speed voltage feedback amplifiers
that are ideal for applications requiring low voltage
noise, including communication and imaging. The
single-amplifier THS4031 and the dual-amplifier
THS4032 offer very good ac performance with
100-MHz bandwidth, 100-V/µs slew rate, and
60-ns settling time (0.1%). The THS4031 and
THS4032 are stable at gains of 2 (–1) or greater.
These amplifiers have a high drive capability of
90 mA and draw only 8.5-mA supply current per
channel. With total harmonic distortion (THD) of
–72 dBc at f = 1 MHz, the THS4031 and THS4032
are ideally suited for applications requiring low
distortion.
8
2
NC
description
1
NULL
D
NULL
IN –
IN +
VCC–
VCC–
NC
D
D
D
D
THS4031
D, DGN, AND JG PACKAGE
(TOP VIEW)
NC
D
D
Ultra-low 1.6 nV/√Hz Voltage Noise
High Speed
– 100 MHz Bandwidth (G = 2 (–1), –3 dB)
– 100 V/µs Slew Rate
Stable in Gains of 2 (–1) or Greater
Very Low Distortion
– THD = –72 dBc (f = 1 MHz, RL = 150 Ω)
– THD = –90 dBc (f = 1 MHz, RL = 1 kΩ)
Low 0.5 mV (Typ) Input Offset Voltage
90 mA Output Current Drive (Typical)
±5 V to ±15 V Typical Operation
Available in Standard SOIC, MSOP
PowerPAD, JG, or FK Package
Evaluation Module Available
NC
D
D
CAUTION: The THS4031 and THS4032 provide ESD protection circuitry. However, permanent damage can still occur if this device
is subjected to high-energy electrostatic discharges. Proper ESD precautions are recommended to avoid any performance
degradation or loss of functionality.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
Copyright  2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
VOLTAGE NOISE AND CURRENT NOISE
vs
FREQUENCY
20
I n – Current Noise – pA/ Hz
Vn – Voltage Noise – nV/ Hz
VCC = ± 15 V AND ± 5 V
TA = 25°C
10
Vn
In
1
10
100
10 k
1k
100 k
f – Frequency – Hz
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
0°C to 70°C
–40°C
40°C to 85°C
NUMBER
OF
CHANNELS
PLASTIC
SMALL
OUTLINE†
(D)
PLASTIC MSOP† (DGN)
CERAMIC DIP
(JG)
CHIP
CARRIER
(FK)
EVALUATION
MODULE
DEVICE
SYMBOL
TIACM
—
—
THS4031EVM
1
THS4031CD
THS4031CDGN
2
THS4032CD
THS4032CDGN
TIABD
—
—
THS4032EVM
1
THS4031ID
THS4031IDGN
TIACN
—
—
—
2
THS4032ID
THS4032IDGN
TIABG
—
—
—
–55°C to 125°C
1
—
—
—
THS4031MJG
THS4031MFK
† The D and DGN packages are available taped and reeled. Add an R suffix to the device type (i.e., THS4031CDGNR).
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
—
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
functional block diagram
VCC
1IN–
Null
IN+
2
3
8
–
1
1IN+
IN–
2
3
1OUT
+
1
–
8
6
2IN–
OUT
6
–
7
+
2IN+
5
2OUT
+
4
Figure 1. THS4031 – Single Channel
–VCC
Figure 2. THS4032 – Dual Channel
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage, VCC+ to VCC– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V
Input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±VCC
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA
Differential input voltage, VIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±4 V
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature, TA: C-suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
I-suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
M-suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C
Maximum junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Storage temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds, JG package . . . . . . . . . . . . . . . . . . . . 300°C
Case temperature for 60 seconds, FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
PACKAGE
θJA
(°C/W)
θJC
(°C/W)
TA = 25°C
POWER RATING
D
167‡
38.3
740 mW
DGN§
58.4
4.7
2.14 W
JG
119
28
1050 mW
FK
87.7
20
1375 mW
‡ This data was taken using the JEDEC standard Low-K test PCB. For the JEDEC Proposed
High-K test PCB, the θJA is 95°C/W with a power rating at TA = 25°C of 1.32 W.
§ This data was taken using 2 oz. trace and copper pad that is soldered directly to a 3-in. × 3-in.
PC. For further information, refer to Application Information section of this data sheet.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
recommended operating conditions
MIN
Supply voltage
voltage, VCC+
CC and VCC–
CC
Operating free-air temperature, TA
NOM
MAX
±4.5
±16
Single supply
9
32
C-suffix
0
70
Dual supply
I-suffix
–40
85
M-suffix
–55
125
UNIT
V
°C
electrical characteristics at TA = 25°C, VCC = ±15 V, RL = 150 Ω (unless otherwise noted)
dynamic performance
TEST CONDITIONS†
PARAMETER
BW
SR
Small signal bandwidth (–3
Small-signal
( 3 dB)
VCC = ±15 V
VCC = ±5 V
Gain = –1
1 or 2
Bandwidth for 0.1
0 1 dB flatness
VCC = ±15 V
VCC = ±5 V
Gain = –1
1 or 2
Full power bandwidth§
VO(pp) = 20 V,
VO(pp) = 5 V,
VCC = ±15 V
VCC = ±5 V
Slew rate‡
VCC = ±15 V,
VCC = ±5 V,
20-V step
Settling time to 0.1%
0 1%
VCC = ±15 V,
VCC = ±5 V,
5-V step
Settling time to 0
0.01%
01%
VCC = ±15 V,
VCC = ±5 V,
5-V step
ts
5-V step
2.5-V step
2.5-V step
THS403xC, THS403xI
MIN
TYP
MAX
100
MHz
90
50
MHz
45
1.6
RL = 1 kΩ
MHz
5
100
Gain = –1
1
V/µs
80
60
Gain = –1
1
ns
45
90
Gain = –1
1
UNIT
ns
80
† Full range = 0°C to 70°C for the THS403xC and –40°C to 85°C for the THS403xI.
‡ Slew rate is measured from an output level range of 25% to 75%.
§ Full power bandwidth = slew rate/2 πVO(Peak).
noise/distortion performance
THS4031
THD
Total harmonic
distortion
Input voltage noise
Input current noise
RL = 150 Ω
–81
RL = 1 kΩ
–96
RL = 150 Ω
–72
RL = 1 kΩ
–90
MAX
UNIT
VCC = ±5 V or ±15 V,
VCC = ±5 V or ±15 V,
f = 10 kHz
1.6
nV/√Hz
f = 10 kHz
1.2
pA/√Hz
Gain = 2,,
40 IRE modulation,
NTSC and PAL,,
±100 IRE ramp
Differential phase error
VCC = ±5 V or ±15 V,
VCC = ±15 V
VCC = ±5 V
0.015%
VCC = ±15 V
VCC = ±5 V
0.025°
f = 1 MHz
† Full range = 0°C to 70°C for the THS403xC and – 40°C to 85°C for the THS403xI.
4
TYP
VO(pp)
O( ) = 2 V,,
Gain = 2
Differential gain error
Channel-to-channel crosstalk
(THS4032 only)
MIN
VCC = ±5 V or ±15 V,,
f = 1 MHz,
THS4032
Vn
In
THS403xC, THS403xI
TEST CONDITIONS†
PARAMETER
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
dBc
0.02%
0.03°
–61
dBc
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
electrical characteristics at TA = 25°C, VCC = ±15 V, RL = 150 Ω (unless otherwise noted) (continued)
dc performance
THS403xC, THS403xI
TEST CONDITIONS†
PARAMETER
VCC = ±15 V,
V RL = 1 kΩ
TYP
75
VO = ±10 V
TA = 25°C
TA = full range
45
VO = ±2.5
±2 5 V
TA = 25°C
TA = full range
35
Open loop gain
VCC = ±5 V
V, RL = 1 kΩ
MIN
40
UNIT
V/mV
55
30
VOS
Input offset voltage
VCC = ±5 V or ±15 V
TA = 25°C
TA = full range
0.5
IIB
Input bias current
VCC = ±5 V or ±15 V
TA = 25°C
TA = full range
3
IOS
Input offset current
VCC = ±5 V or ±15 V
TA = 25°C
TA = full range
30
Offset voltage drift
VCC = ±5 V or ±15 V
VCC = ±5 V or ±15 V
TA = full range
TA = full range
Input offset current drift
MAX
2
3
6
8
250
400
mV
µA
nA
10
µV/°C
0.2
nA/°C
† Full range = 0°C to 70°C for the THS403xC and – 40°C to 85°C for the THS403xI.
input characteristics
VICR
Common mode input voltage range
Common-mode
VCC = ±15 V
VCC = ±5 V
VCC = ±15 V,
V
CMRR
MIN
TYP
±13.5
±14.3
± 3.8
± 4.3
95
VICR = ±12 V
TA = 25°C
TA = full range
85
VICR = ±2
±2.5
5V
TA = 25°C
TA = full range
90
Common mode rejection ratio
VCC = ±5 V
V,
ri
THS403xC, THS403xI
TEST CONDITIONS†
PARAMETER
MAX
UNIT
V
80
dB
100
85
Input resistance
Ci
Input capacitance
† Full range = 0°C to 70°C for the THS403xC and – 40°C to 85°C for the THS403xI.
2
MΩ
1.5
pF
output characteristics
TEST CONDITIONS†
PARAMETER
VO
Output voltage swing
VCC = ±15 V
VCC = ±5 V
VCC = ±15 V
VCC = ±5 V
IO
Output current‡
VCC = ±15 V
VCC = ±5 V
ISC
Short-circuit current‡
VCC = ±15 V
THS403xC, THS403xI
MIN
TYP
±13
±13.6
±3.4
±3.8
RL = 250 Ω
±12
±12.9
RL = 150 Ω
±3
±3.5
60
90
50
70
RL = 1 kΩ
RL = 20 Ω
150
MAX
UNIT
V
mA
mA
RO
Output resistance
Open loop
13
Ω
† Full range = 0°C to 70°C for the THS403xC and – 40°C to 85°C for the THS403xI.
‡ Observe power dissipation ratings to keep the junction temperature below the absolute maximum rating when the output is heavily loaded or
shorted. See the absolute maximum ratings section of this data sheet for more information.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
electrical characteristics at TA = 25°C, VCC = ±15 V, RL = 150 Ω (unless otherwise noted) (continued)
power supply
TEST CONDITIONS†
PARAMETER
VCC
ICC
PSRR
Dual supply
Supply voltage operating range
THS403xC, THS403xI
MIN
±16.5
9
33
VCC = ±15 V
TA = 25°C
TA = full range
8.5
VCC = ±5 V
TA = 25°C
TA = full range
7.5
VCC = ±5 V or ±15 V
TA = 25°C
TA = full range
Supply current (each amplifier)
MAX
±4.5
Single supply
Power supply rejection ratio
TYP
UNIT
V
10
11
mA
9
10.5
85
95
dB
80
† Full range = 0°C to 70°C for C suffix and – 40°C to 85°C for I suffix
electrical characteristics at TA = full range, VCC = ±15 V, RL = 1 kΩ (unless otherwise noted)
dynamic performance
TEST CONDITIONS†
PARAMETER
VCC = ±15 V,
VCC = ±15 V
Unity gain bandwidth
Small signal bandwidth (–3
Small-signal
( 3 dB)
BW
VCC = ±5 V
VCC = ±15 V
Bandwidth for 0.1
0 1 dB flatness
VCC = ±5 V
VO(pp) = 20 V,
Full power bandwidth‡
SR
Closed loop
VO(pp) = 5 V,
VCC = ±15 V
Slew rate
MIN
100§
VCC = ±15 V
VCC = ±5 V
Settling time to 0.1%
0 1%
Settling time to 0
0.01%
01%
VCC = ±15 V,
VCC = ±5 V,
5-V step
2.5-V step
2.5-V step
MAX
120
100
Gain = –1 or 2
90
MHz
MHz
45
1.6
MHz
5
80§
100
V/µs
60
Gain = –1
1
ns
45
90
Gain = –1
1
UNIT
MHz
50
RL = 1 kΩ
RL = 1 kΩ
5-V step
TYP
Gain = –1 or 2
Gain = –1
1 or 2
VCC = ±15 V,
VCC = ±5 V,
ts
RL = 1 kΩ
THS4031M
ns
80
† Full range = –55°C to 125°C for the THS4031M.
‡ Full power bandwidth = slew rate/2 πVO(Peak).
§ This parameter is not tested.
noise/distortion performance
MAX
UNIT
–81
–96
f = 10 kHz,
RL = 150 Ω
1.6
nV/√Hz
VCC = ±5 V or ±15 V,
TA = 25°C
f = 10 kHz,
RL = 150 Ω
1.2
pA/√Hz
Gain = 2,
40 IRE modulation,
modulation
25 C
TA = 25°C
NTSC and PAL,
±100 IRE ram
ramp,
RL = 150 Ω
VCC = ±5 V or ±15 V,,
f = 1 MHz, Gain = 2,
VO(
O(pp)) = 2 V,,
TA = 25°C
Vn
Input voltage noise
VCC = ±5 V or ±15 V,
TA = 25°C
In
Input current noise
VCC = ±15 V
VCC = ±5 V
VCC = ±15 V
VCC = ±5 V
† Full range = –55°C to 125°C for the THS4031M.
6
TYP
RL = 1 kΩ
Total harmonic distortion
Differential phase error
MIN
RL = 150 Ω
THD
Differential gain error
THS4031M
TEST CONDITIONS†
PARAMETER
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
0.015%
0.02%
0.025°
0.03°
dBc
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
electrical characteristics at TA = full range, VCC = ±15 V, RL = 1 kΩ (unless otherwise noted)
(continued)
dc performance
THS4031M
TEST CONDITIONS†
PARAMETER
MIN
TYP
75
VCC = ±15 V,
V VO = ±10 V
TA = 25°C
TA = full range
45
5V
VCC = ±5 V
V, VO = ±2
±2.5
TA = 25°C
TA = full range
40
0.5
Open loop gain
40
UNIT
V/mV
55
35
VIO
Input offset voltage
VCC = ±5 V or ±15 V
TA = 25°C
TA = full range
IIB
Input bias current
VCC = ±5 V or ±15 V
TA = 25°C
TA = full range
3
IIO
Input offset current
VCC = ±5 V or ±15 V
TA = 25°C
TA = full range
30
Offset voltage drift
VCC = ±5 V or ±15 V
VCC = ±5 V or ±15 V
TA = full range
TA = full range
Input offset current drift
MAX
2
3
6
8
250
400
mV
µA
nA
10
µV/°C
0.2
nA/°C
† Full range = –55°C to 125°C for the THS4031M.
input characteristics
VICR
CMRR
ri
Common mode input voltage range
Common-mode
THS4031M
TEST CONDITIONS†
PARAMETER
VCC = ±15 V
VCC = ±5 V
MIN
TYP
±13.5
±14.3
± 3.8
± 4.3
95
VCC = ±15 V,
V
VICR = ±12 V
TA = 25°C
TA = full range
85
VCC = ±5 V
V,
VICR = ±2
±2.5
5V
TA = 25°C
TA = full range
90
Common mode rejection ratio
MAX
UNIT
V
80
dB
100
85
Input resistance
Ci
Input capacitance
† Full range = –55°C to 125°C for the THS4031M.
2
MΩ
1.5
pF
output characteristics
TEST CONDITIONS†
PARAMETER
VO
Output voltage swing
VCC = ±15 V
VCC = ±5 V
VCC = ±15 V
VCC = ±5 V
IO
Output current‡
VCC = ±15 V
VCC = ±5 V
ISC
Short-circuit current‡
VCC = ±15 V
RL = 1 kΩ
RL = 250 Ω
RL = 150 Ω
RL = 20 Ω
THS4031M
MIN
TYP
±13
±13.6
±3.4
±3.8
±12
±12.9
±3
±3.5
60
90
50
70
150
MAX
UNIT
V
mA
mA
RO
Output resistance
Open loop
13
Ω
† Full range = –55°C to 125°C for the THS4031M.
‡ Observe power dissipation ratings to keep the junction temperature below the absolute maximum rating when the output is heavily loaded or
shorted. See the absolute maximum ratings section of this data sheet for more information.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
electrical characteristics at TA = full range, VCC = ±15 V, RL = 1 kΩ (unless otherwise noted)
(continued)
power supply
VCC
ICC
PSRR
THS4031M
TEST CONDITIONS†
PARAMETER
MIN
Dual supply
Supply voltage operating range
±16.5
9
33
VCC = ±15 V
TA = 25°C
TA = full range
8.5
VCC = ±5 V
TA = 25°C
TA = full range
7.5
VCC = ±5 V or ±15 V
TA = 25°C
TA = full range
Supply current (each amplifier)
MAX
±4.5
Single supply
Power supply rejection ratio
TYP
11
9
330 Ω
_
95
dB
80
VI1
330 Ω
_
VO1
+
CH1
50 Ω
150 Ω
VO2
150 Ω
VI2
+
CH2
50 Ω
Figure 3. THS4032 Crosstalk Test Circuit
Rg
Rf
Rg
VI
VO
+
50 Ω
50 Ω
POST OFFICE BOX 655303
_
VO
+
RL
Figure 4. Step Response Test Circuit
8
Rf
VI
_
RL
Figure 5. Step Response Test Circuit
• DALLAS, TEXAS 75265
mA
10
85
PARAMETER MEASUREMENT INFORMATION
330 Ω
V
10
† Full range = –55°C to 125°C for the THS4031M.
330 Ω
UNIT
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Input offset voltage distribution
6, 7
VIO
IIB
Input offset voltage
vs Free-air temperature
8
Input bias current
vs Free-air temperature
9
VO
VOM
Output voltage swing
vs Supply voltage
10
Maximum output voltage swing
vs Free-air temperature
11
IO
ICC
Maximum output current
vs Free-air temperature
12
Supply current
vs Free-air temperature
13
VIC
ZO
Common-mode input voltage
vs Supply voltage
14
Closed-loop output impedance
vs Frequency
15
Open-loop gain
16
Phase response
PSRR
Power-supply rejection ratio
vs Frequency
17
CMRR
Common-mode rejection ratio
vs Frequency
18
Crosstalk
vs Frequency
19
Harmonic distortion
vs Frequency
20, 21
Harmonic distortion
vs Peak-to-peak output voltage
22, 23
Slew rate
vs Free-air temperature
24
0.1% settling time
vs Output voltage step size
25
Output amplitude
vs Frequency
SR
Small and large signal frequency response
26 – 30
31 – 34
Differential phase
vs Number of 150-Ω loads
35, 36
Differential gain
vs Number of 150-Ω loads
37, 38
1-V step response
39, 40
4-V step response
41
20-V step response
42
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9
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
INPUT OFFSET VOLTAGE DISTRIBUTION
INPUT OFFSET VOLTAGE DISTRIBUTION
22.5
14
250 Samples
3 Wafer Lots
TA = 25°C
VCC = ± 15 V
Percentage of Amplifiers – %
Percentage of Amplifiers – %
12
10
8
6
4
2
17.5
15
12.5
10
7.5
5
2.5
0
0
–2
–1.6
0.4
0.8
–1.2 –0.8 –0.4
0
VIO – Input Offset Voltage – mV
–2
1.2
–1.6
0.4
–1.2 –0.8 –0.4
0
VIO – Input Offset Voltage – mV
0.8
1.2
Figure 7
Figure 6
INPUT OFFSET VOLTAGE
vs
FREE-AIR TEMPERATURE
INPUT BIAS CURRENT
vs
FREE-AIR TEMPERATURE
–0.3
3.10
3.05
–0.35
I IB – Input Bias Current – µ A
V IO – Input Offset Voltage – mV
250 Samples
3 Wafer Lots
TA = 25°C
VCC = ± 5 V
20
VCC = ± 5 V
–0.4
–0.45
VCC = ± 15 V
–0.5
VCC = ± 15 V
3
2.95
2.90
2.85
VCC = ± 5 V
2.80
–0.55
2.75
–0.6
–40
–20
60
40
80
0
20
TA – Free-Air Temperature – °C
100
2.70
–40
–20
Figure 8
10
0
20
40
60
80
TA – Free-Air Temperature – °C
Figure 9
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100
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE SWING
vs
SUPPLY VOLTAGE
MAXIMUM OUTPUT VOLTAGE SWING
vs
FREE–AIR TEMPERATURE
14
14
VOM – Maximum Output Voltage Swing – ± V
|VO | – Output Voltage Swing – ± V
TA = 25°C
12
RL = 1 KΩ
10
RL = 150 Ω
8
6
4
13
13
7
9
11
± VCC – Supply Voltage – ± V
VCC = ± 15 V
RL = 250 Ω
12.5
2
5
VCC = ± 15 V
RL = 1 kΩ
13.5
12
4.5
VCC = ± 5 V
RL = 1 kΩ
4
3.5
VCC = ± 5 V
RL = 150 Ω
3
2.5
–40
15
–20
60
80
0
20
40
TA – Free-Air Temperature – °C
Figure 10
Figure 11
MAXIMUM OUTPUT CURRENT
vs
FREE-AIR TEMPERATURE
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
110
11
Each Amplifier
VCC = ± 15 V
Source Current
100
10
I CC – Supply Current – mA
I O – Maximum Output Current – mA
RL = 20 Ω
90
80
100
VCC = ± 15 V
Sink Current
VCC = ± 5 V
Sink Current
70
VCC = ± 5 V
Source Current
VCC = ± 10 V
8
VCC = ± 5 V
7
6
60
50
–40
VCC = ± 15 V
9
–20
60
80
0
20
40
TA – Free-Air Temperature – °C
100
5
–40
–20
Figure 12
0
20
60
80
40
TA – Free-Air Temperature – °C
100
Figure 13
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11
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
COMMON-MODE INPUT VOLTAGE
vs
SUPPLY VOLTAGE
CLOSED-LOOP OUTPUT IMPEDANCE
vs
FREQUENCY
15
100
Z O– Closed-Loop Output Impedance – Ω
VIC– Common-Mode Input – ± V
TA = 25°C
13
11
9
7
5
3
5
13
7
9
11
± VCC – Supply Voltage – ± V
Gain = 1
RF = 1 kΩ
PI = + 3 dBm
10
1
0.1
+
50 Ω
f – Frequency – Hz
Figure 15
OPEN-LOOP GAIN AND PHASE RESPONSE
100
45°
VCC = ± 15 V
RL = 150 Ω
80
0°
60
–45°
Phase
40
–90°
20
–135°
0
–180°
–225°
10 k
100 k
1M
10 M 100 M 1 G
f – Frequency – Hz
Figure 16
12
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Phase Response
Open-Loop Gain – dB
Gain
1k
VI
THS403x
1000
VO
Zo =
–1
VI
10 M
1M
Figure 14
–20
100
1 kΩ
(
0.01
100 k
15
VO
1 kΩ
–
100 M
)
500 M
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
POWER-SUPPLY REJECTION RATIO
vs
FREQUENCY
COMMON-MODE REJECTION RATIO
vs
FREQUENCY
120
CMRR – Common-Mode Rejection Ratio – dB
THS4032 – VCC+
100
THS4031 – VCC+
THS4031 – VCC–
80
60
THS4032 – VCC–
40
20
VCC = ± 15 V and ± 5 V
10
100
1k
10 k
1M
100 k
10 M
VCC = ± 5 V
100
VCC = ± 15 V
80
60
1 kΩ
1 kΩ
40
_
VI
VO
+
20
0
1 kΩ
RL
150 Ω
1 kΩ
0
100 M
10
100
1k
10 k
100 k
1M
f – Frequency – Hz
f – Frequency – Hz
Figure 17
Figure 18
10 M 100 M
THS4032
CROSSTALK
vs
FREQUENCY
0
–10
VCC = ± 15 V
PI = 0 dBm
See Figure 3
–20
Crosstalk – dB
PSRR – Power-Supply Rejection Ratio – dB
120
–30
–40
–50
Input = CH 2
Output = CH 1
–60
–70
Input = CH 1
Output = CH 2
–80
–90
100 k
1M
10 M
100 M
500 M
f – Frequency – Hz
Figure 19
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13
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
HARMONIC DISTORTION
vs
FREQUENCY
–40
–40
VCC = ± 15 V and ± 5 V
Gain = 2
RF = 300 Ω
RL = 1 kΩ
VO(PP) = 2 V
THS4031 and THS4032
Third Harmonics
–60
–70
THS4031
Second Harmonic
–80
VCC = ± 15 V and ± 5 V
Gain = 2
RF = 300 Ω
RL = 150 Ω
VO(PP) = 2 V
THS4031
Second Harmonic
–50
Harmonic Distortion – dBc
–50
Harmonic Distortion – dBc
HARMONIC DISTORTION
vs
FREQUENCY
THS4032
Second Harmonic
–90
–100
–60
THS4032
Second Harmonic
–70
–80
–90
–100
THS4031 and THS4032
Third Harmonics
–110
100 k
–110
100 k
10 M
1M
f – Frequency – Hz
Figure 20
Figure 21
HARMONIC DISTORTION
vs
PEAK-TO-PEAK OUTPUT VOLTAGE
HARMONIC DISTORTION
vs
PEAK-TO-PEAK OUTPUT VOLTAGE
–50
–10
THS4031 and THS4032
Third Harmonics
VCC = ± 15 V
Gain = 5
RF = 300 Ω
RL = 150 Ω
f = 1 MHz
–20
–30
THS4032
Second Harmonic
Harmonic Distortion – dBc
Harmonic Distortion – dBc
–60
–70
–80
THS4031
Second Harmonic
–90
VCC = ± 15 V
Gain = 5
RF = 300 Ω
RL = 1 kΩ
f = 1 MHz
–100
0
2
4
6
8
10 12 14 16 18
VO(PP) – Peak-to-Peak Output Voltage – V
–40
–50
THS4032
Second Harmonic
–60
–70
–80
THS4031
Second Harmonic
–90
THS4031 and THS4032
Third Harmonics
–100
–110
20
–110
0
2
4
6
8
10 12 14 16 18
VO(PP) – Peak-to-Peak Output Voltage – V
Figure 22
14
10 M
1M
f – Frequency – Hz
Figure 23
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20
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
SLEW RATE
vs
FREE-AIR TEMPERATURE
0.1% SETTLING TIME
vs
OUTPUT VOLTAGE STEP SIZE
120
80
Gain = –1
RL = 150 Ω
t s – 0.1% Settling Time – ns
SR – Slew Rate – V/ µ s
Vcc = ± 15 V
Step = 20 V
100
Gain = –1
RF = 430 Ω
70
110
90
80
Vcc = ± 5 V
Step = 4 V
70
60
60
VCC = ± 5 V
50
40
VCC = ± 15 V
30
20
10
50
–40
–20
60
80
0
20
40
TA – Free-Air Temperature – °C
0
100
4
2
3
VO – Output Voltage Step Size – V
1
Figure 24
Figure 25
OUTPUT AMPLITUDE
vs
FREQUENCY
OUTPUT AMPLITUDE
vs
FREQUENCY
8
8
RF = 1 kΩ
7
6
5
Output Amplitude – dB
Output Amplitude – dB
7
RF = 300 Ω
RF = 100 Ω
4
3
2
1
0
5
VCC = ± 15 V
Gain = 2
RL = 150 Ω
VO(PP) = 0.4 V
–1
100 k
1M
6
5
500 M
RF = 100 Ω
3
2
0
100 M
RF = 300 Ω
4
1
10 M
RF = 1 kΩ
VCC = ± 5 V
Gain = 2
RL = 150 Ω
VO(PP) = 0.4 V
–1
100 k
1M
10 M
f – Frequency – Hz
f – Frequency – Hz
Figure 26
Figure 27
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100 M
500 M
15
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
OUTPUT AMPLITUDE
vs
FREQUENCY
OUTPUT AMPLITUDE
vs
FREQUENCY
2
2
1
RF = 1 kΩ
0
–1
Output Amplitude – dB
Output Amplitude – dB
1
RF = 360 Ω
RF = 100 Ω
–2
–3
–4
–5
–6
VCC = ± 15 V
Gain = –1
RL = 150 Ω
VO(PP) = 0.4 V
–7
100 k
RF = 1 kΩ
0
–1
RF = 360 Ω
RF = 100 Ω
–2
–3
–4
VCC = ± 5 V
Gain = –1
RL = 150 Ω
VO(PP) = 0.4 V
–5
–6
1M
100 M
10 M
–7
100 k
500 M
1M
f – Frequency – Hz
10 M
f – Frequency – Hz
Figure 28
Figure 29
OUTPUT AMPLITUDE
vs
FREQUENCY
16
VCC = ± 15 V
Output Amplitude – dB
14
12
10
VCC = ± 5 V
8
6
4
2
0
100 k
Gain = 5
RF = 3.9 kΩ
RL = 150 Ω
VO(PP) = 0.4 V
1M
10 M
100 M
f – Frequency – Hz
Figure 30
16
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500 M
100 M
500 M
THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
SMALL AND LARGE SIGNAL
FREQUENCY RESPONSE
SMALL AND LARGE SIGNAL
FREQUENCY RESPONSE
3
–3
–6
0
VO – Output Voltage Level – dBV
VO – Output Voltage Level – dBV
0
3
VCC = ± 15 V
Gain = 2
RF = 300 Ω
RL= 150 Ω
VI = 0.5 V RMS
VI = 0.25 V RMS
–9
–12
VI = 125 mV RMS
–15
–18
VI = 62.5 mV RMS
–3
–6
VI = 0.25 V RMS
–9
–12
VI = 125 mV RMS
–15
–18
VI = 62.5 mV RMS
–21
–21
–24
100 k
1M
10 M
100 M
–24
100 k
500 M
1M
f – Frequency – Hz
VI = 0.25 V RMS
–15
18
VI = 125 mV RMS
–21
–24
VI = 62.5 mV RMS
–27
–30
100 k
–3
–6
VO – Output Voltage Level – dBV
VO – Output Voltage Level – dBV
–9
–12
SMALL AND LARGE SIGNAL
FREQUENCY RESPONSE
VCC = ± 15 V
Gain = –1
RF = 430 Ω
RL = 150 Ω
VI = 0.5 V RMS
500 M
Figure 32
SMALL AND LARGE SIGNAL
FREQUENCY RESPONSE
–3
100 M
10 M
f – Frequency – Hz
Figure 31
–6
VCC = ± 5 V
Gain = 2
RF = 300 Ω
RL = 150 Ω
VI = 0.5 V RMS
VCC = ± 5 V
Gain = –1
RF = 430 Ω
RL = 150 Ω
VI = 0.5 V RMS
–9
–12
VI = 0.25 V RMS
–15
18
VI = 125 mV RMS
–21
–24
VI = 62.5 mV RMS
–27
1M
10 M
100 M
500 M
–30
100 k
f – Frequency – Hz
1M
10 M
100 M
500 M
f – Frequency – Hz
Figure 33
Figure 34
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
DIFFERENTIAL PHASE
vs
NUMBER OF 150-Ω LOADS
DIFFERENTIAL PHASE
vs
NUMBER OF 150-Ω LOADS
0.2°
0.25°
Gain = 2
RF = 680 Ω
40 IRE-NTSC Modulation
Worst Case ± 100 IRE Ramp
VCC = ± 5 V
0.2°
Differential Phase
Differential Phase
0.15°
0.1°
Gain = 2
RF = 680 Ω
40 IRE-PAL Modulation
Worst Case ± 100 IRE Ramp
VCC = ± 15 V
0.15°
VCC = ± 5 V
VCC = ± 15 V
0.1°
0.05°
0.05°
0°
1
2
3
Number of 150-Ω Loads
0°
4
1
2
3
Number of 150-Ω Loads
Figure 35
Figure 36
DIFFERENTIAL GAIN
vs
NUMBER OF 150-Ω LOADS
DIFFERENTIAL GAIN
vs
NUMBER OF 150-Ω LOADS
0.025°
0.03
Gain = 2
RF = 680 Ω
40 IRE-NTSC Modulation
Worst Case ± 100 IRE Ramp
Gain = 2
RF = 680 Ω
40 IRE-PAL Modulation
Worst Case ± 100 IRE Ramp
0.02°
Differential Gain – %
0.025
Differential Gain – %
4
VCC = ± 5 V
VCC = ± 15 V
0.015°
VCC = ± 5 V
0.02
VCC = ± 15 V
0.15
0.01°
1
3
2
Number of 150-Ω Loads
4
0.01
1
Figure 37
18
3
2
Number of 150-Ω Loads
Figure 38
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
TYPICAL CHARACTERISTICS
1-V STEP RESPONSE
1-V STEP RESPONSE
0.6
0.6
VCC = ± 5 V
Gain = 2
RF = 300 Ω
RL = 150 Ω
See Figure 4
0.4
VO – Output Voltage – V
VO – Output Voltage – V
0.4
VCC = ± 15 V
Gain = 2
RF = 300 Ω
RL = 150 Ω
See Figure 4
0.2
0
–0.2
–0.4
0.2
0
–0.2
–0.4
–0.6
–0.6
0
200
400
800
600
1000
0
200
t – Time – ns
600
800
1000
800
1000
t – Time – ns
Figure 39
Figure 40
4-V STEP RESPONSE
20-V STEP RESPONSE
2.5
15
2
10
VO – Output Voltage – V
1.5
VO – Output Voltage – V
400
1
0.5
0
–0.5
VCC = ± 5 V
Gain = –1
RF = 430 Ω
RL = 150 Ω
See Figure 5
–1
–1.5
–2
200
400
600
0
RL = 150 Ω
–5
–10
–2.5
0
RL = 1 kΩ
5
VCC = ± 15 V
Gain = 2
RF = 330 Ω
See Figure 4
Offset For Clarity
800
1000
–15
0
200
t – Time – ns
400
600
t – Time – ns
Figure 42
Figure 41
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
theory of operation
The THS403x is a high-speed operational amplifier configured in a voltage feedback architecture. It is built using
a 30-V, dielectrically isolated, complementary bipolar process with NPN and PNP transistors possessing fTs of
several GHz. This results in an exceptionally high-performance amplifier that has a wide bandwidth, high slew
rate, fast settling time, and low distortion. A simplified schematic is shown in Figure 43.
(7) VCC +
(6) OUT
IN – (2)
IN + (3)
(4) VCC –
NULL (1)
NULL (8)
Figure 43. THS4031 Simplified Schematic
noise calculations and noise figure
Noise can cause errors on very small signals. This is especially true when amplifying small signals. The noise
model for the THS403x, shown in Figure 44, includes all of the noise sources as follows:
•
•
•
•
20
en = Amplifier internal voltage noise (nV/√Hz)
IN+ = Noninverting current noise (pA/√Hz)
IN– = Inverting current noise (pA/√Hz)
eRx = Thermal voltage noise associated with each resistor (eRx = 4 kTRx )
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
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APPLICATION INFORMATION
noise calculations and noise figure (continued)
eRs
RS
en
Noiseless
+
_
eni
IN+
eno
eRf
RF
eRg
IN–
RG
Ǹǒ Ǔ
Figure 44. Noise Model
The total equivalent input noise density (eni) is calculated by using the following equation:
e
Where:
+
ni
en
2
ǒ
) IN )
Ǔ )ǒ ǒ
2
R
S
IN–
R
ǓǓ
ǒ
Ǔ
ø RG ) 4 kTRs ) 4 kT RF ø RG
F
2
k = Boltzmann’s constant = 1.380658 × 10–23
T = Temperature in degrees Kelvin (273 +°C)
RF || RG = Parallel resistance of RF and RG
ǒ Ǔ
To get the equivalent output noise of the amplifier, just multiply the equivalent input noise density (eni) by the
overall amplifier gain (AV).
e no
+ eni AV + e
ni
1
) RR
F
(Noninverting Case)
G
As the previous equations show, to keep noise at a minimum, small-value resistors should be used. As the
closed-loop gain is increased (by reducing RG), the input noise is reduced considerably because of the parallel
resistance term. This leads to the general conclusion that the most dominant noise sources are the source
resistor (RS) and the internal amplifier noise voltage (en). Because noise is summed in a root-mean-squares
method, noise sources smaller than 25% of the largest noise source can be effectively ignored. This advantage
can greatly simplify the formula and make noise calculations much easier to calculate.
For more information on noise analysis, please refer to the Noise Analysis section in Operational Amplifier
Circuits Applications Report (literature number SLVA043).
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
noise calculations and noise figure (continued)
This brings up another noise measurement usually preferred in RF applications, the noise figure (NF). Noise
figure is a measure of noise degradation caused by the amplifier. The value of the source resistance must be
defined and is typically 50 Ω in RF applications.
NF
+ 10log
ȱȧ
Ȳǒ
ȳȧ
Ǔȴ
e 2
ni
2
e
Rs
Because the dominant noise components are generally the source resistance and the internal amplifier noise
voltage, we can approximate noise figure as:
ȱȧ ȡȧǒ
ȧȧ )Ȣ
ȧȲ
e
NF
+ 10log
1
Ǔ )ǒ )
2
n
IN
4 kTR
Ǔ ȣȧȤȳȧ
2
R
S
S
ȧȧ
ȧȴ
Figure 45 shows the noise figure graph for the THS403x.
NOISE FIGURE
vs
SOURCE RESISTANCE
16
f = 10 kHz
TA = 25°C
14
Noise Figure – dB
12
10
8
6
4
2
0
10
100
1k
Source Resistance – Ω
10 k
Figure 45. Noise Figure vs Source Resistance
22
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
optimizing frequency response
Internal frequency compensation of the THS403x was selected to provide very wide bandwidth performance
and still maintain a very low noise floor. In order to meet these performance requirements, the THS403x must
have a minimum gain of 2 (–1). Because everything is referred to the noninverting terminal of an operational
amplifier, the noise gain in a G = –1 configuration is the same as a G = 2 configuration.
One of the keys to maintaining a smooth frequency response, and hence, a stable pulse response, is to pay
particular attention to the inverting terminal. Any stray capacitance at this node causes peaking in the frequency
response (see Figure 46 and Figure 47). Two things can be done to help minimize this effect. The first is to simply
remove any ground planes under the inverting terminal of the amplifier, including the trace that connects to this
terminal. Additionally, the length of this trace should be minimized. The capacitance at this node causes a lag
in the voltage being fed back due to the charging and discharging of the stray capacitance. If this lag becomes
too long, the amplifier will not be able to correctly keep the noninverting terminal voltage at the same potential
as the inverting terminal’s voltage. Peaking and possible oscillations will then occur if this happens.
OUTPUT AMPLITUDE
vs
FREQUENCY
9
Output Amplitude – dB
8
7
4
VCC = ± 15 V
Gain = 2
RF = 300 Ω
RL = 150 Ω
VO(PP) = 0.4 V
Ci– = 10 pF
3
2
Output Amplitude – dB
10
OUTPUT AMPLITUDE
vs
FREQUENCY
6
No Ci–
(Stray C Only)
5
4
3
2
300 Ω
Ci–
300 Ω
VI
+
0
No Ci–
(Stray C Only)
–1
–2
–3
–4
150 Ω
Ci–= 10 pF
1
VO
50 Ω
1
0
100 k
_
VCC = ± 15 V
Gain = –1
RF = 360 Ω
RL = 150 Ω
VO(PP) = 0.4 V
360 Ω
360 Ω
VI
56 Ω
Ci–
_
VO
+
150 Ω
–5
1M
10 M
100 M
500 M
–6
100 k
1M
10 M
f – Frequency – Hz
f – Frequency – Hz
Figure 46
Figure 47
100 M
500 M
The second precaution to help maintain a smooth frequency response is to keep the feedback resistor (Rf) and
the gain resistor (Rg) values fairly low. These two resistors are effectively in parallel when looking at the ac
small-signal response. This is why in Figure 30, a feedback resistor of 3.9 kΩ with a gain resistor of 1 kΩ only
shows a small peaking in the frequency response. The parallel resistance is only 800 Ω. This value, in
conjunction with a very small stray capacitance test PCB, forms a zero on the edge of the amplifier’s natural
frequency response. To eliminate this peaking, all that needs to be done is to reduce the feedback and gain
resistances. One other way to compensate for this stray capacitance is to add a small capacitor in parallel with
the feedback resistor. This helps to neutralize the effects of the stray capacitance. To keep this peaking out of
the operating range, the stray capacitance and resistor value’s time constant must be kept low. But, as can be
seen in Figures 26 – 29, a value too low starts to reduce the bandwidth of the amplifier. Table 1 shows some
recommended feedback resistors to be used with the THS403x.
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
optimizing frequency response (continued)
Table 1. Recommended Feedback Resistors
GAIN
Rf for VCC = ±15 V and ± 5 V
2
300 Ω
–1
360 Ω
5
3.3 kΩ (low stray-c PCB only)
unity-gain concerns
THS403x was designed for extremely low noise with a minimum gain of 2 (–1). If the amplifier were to be
configured for unity gain, the output would tend to oscillate because the open-loop intersection on a Bode
diagram is at a –40 dB/decade slope instead of the –20 dB/decade slope required for stable operation. But, it
is sometimes desirable to have a low-noise unity gain buffer. There is a way to accomplish this feat with the
THS403x with some added complexity (see Figure 48). The lag compensation circuit shown in Figure 48
increases the noise gain of the amplifier without increasing the signal gain. Another way to look at this is that
the open-loop gain is effectively reduced by the 1 + RF/RC gain. This reduction causes the –40 dB/decade pole
to be shifted down into an open-loop gain of less than 1. The drawbacks of this circuit are the decreased
frequency response, the increased noise, and the increased output offset voltage (VOO). One way to eliminate
the VOO increase is to add a capacitor (CC) in series with RC, with the added requirement that the time constant
of CC and RC be set low enough for the Bode plot intersection to be at a –20 dB/decade slope. Typically, a 1
+ RF /RC gain of 2 to 3 yields a smooth frequency response for the THS403x. If CC is used, it is desirable to have
the 1/(2 π RC CC) frequency 5 to 10 times lower than the amplifier’s natural bandwidth. One additional advantage
this circuit provides is that it makes driving capacitive loads much easier. A capacitive load causes the
–40 dB/decade intersection (because of the phase lag), to be above unity gain, the same as described
previously. In general, this RC and CC modification can be used in both an inverting and noninverting
configuration with the same results.
24
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100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
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APPLICATION INFORMATION
unity-gain concerns (continued)
Original Open
Loop Response
Gain (dB)
See Note A
RF
RC
CC
VI
_
VO
+
RL
Effective
Compensated
O.L. Response
(without CC)
CL
Unstable
Intersection
f
0
Stable
Intersection
NOTE A: The difference is due to 1+RF/RC noise gain.
Figure 48. Unity Gain Compensation
driving a capacitive load
Driving capacitive loads with high-performance amplifiers is not a problem as long as certain precautions are
taken. The first is to realize that the THS403x has been internally compensated to maximize its bandwidth and
slew-rate performance. When the amplifier is compensated in this manner, capacitive loading directly on the
output will decrease the phase margin of the device leading to high-frequency ringing or oscillations. Therefore,
for capacitive loads of greater than 10 pF, it is recommended that a resistor be placed in series with the output
of the amplifier, as shown in Figure 49. A minimum value of 20 Ω should work well for most applications. For
example, in 75-Ω transmission systems, setting the series resistor value to 75 Ω both isolates any capacitance
loading and provides the proper line impedance matching at the source end.
360 Ω
360 Ω
Input
_
20 Ω
Output
THS403x
+
CLOAD
Figure 49. Driving a Capacitive Load
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THS4031, THS4032
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SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
offset nulling
The THS403x has very low input offset voltage for a high speed amplifier. However, if additional correction is
required, the designer can make use of an offset nulling function provided on the THS4031. By placing a
potentiometer between terminals 1 and 8 of the device and tying the wiper to the negative supply, the input offset
can be adjusted. This is shown in Figure 50.
VCC+
0.1 µF
+
THS4031
_
10 kΩ
0.1 µF
VCC –
Figure 50. Offset Nulling Schematic
offset voltage
The output offset voltage (VOO) is the sum of the input offset voltage (VIO) and both input bias currents (IIB) times
the corresponding gains. The following schematic and formula can be used to calculate the output offset
voltage:
RF
IIB–
RG
+
VI
RS
–
VO
+
ƪ ǒ Ǔƫ ƪ ǒ Ǔƫ
IIB+
V
OO
+ VIO 1 )
R
R
F
G
" IIB) RS 1 )
R
R
F
G
" IIB– RF
Figure 51. Output Offset Voltage Model
26
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100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
general configurations
When receiving low-level signals, limiting the bandwidth of the incoming signals into the system is often
required. The simplest way to accomplish this is to place an RC filter at the noninverting terminal of the amplifer
(see Figure 52).
RG
RF
–
VO
+
VI
R1
V
O
V
I
C1
ǒ Ǔǒ
+ 1 ) RRF
G
1
f
–3dB
Ǔ
1
+ 2pR1C1
) sR1C1
1
Figure 52. Single-Pole Low-Pass Filter
If even more attenuation is needed, a multiple-pole filter is required. The Sallen-Key filter can be used for this
task. For best results, the amplifier should have a bandwidth that is 8 to 10 times the filter frequency bandwidth.
Otherwise, phase shift of the amplifier can occur.
C1
+
_
VI
R1
R1 = R2 = R
C1 = C2 = C
Q = Peaking Factor
(Butterworth Q = 0.707)
R2
f
C2
RG
RF
–3dB
RG =
+ 2p1RC
(
RF
1
2–
Q
)
Figure 53. 2-Pole Low-Pass Sallen-Key Filter
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APPLICATION INFORMATION
circuit-layout considerations
In order to achieve the levels of high-frequency performance of the THS403x, it is essential that proper
printed-circuit board high-frequency design techniques be followed. A general set of guidelines is given below.
In addition, a THS403x evaluation board is available to use as a guide for layout or for evaluating the device
performance.
D
D
D
D
D
Ground planes – It is highly recommended that a ground plane be used on the board to provide all
components with a low inductive ground connection. However, in the areas of the amplifier inputs and
output, the ground plane can be removed to minimize the stray capacitance.
Proper power-supply decoupling – Use a 6.8-µF tantalum capacitor in parallel with a 0.1-µF ceramic
capacitor on each supply terminal. It may be possible to share the tantalum among several amplifiers
depending on the application, but a 0.1-µF ceramic capacitor should always be used on the supply terminal
of every amplifier. In addition, the 0.1-µF capacitor should be placed as close as possible to the supply
terminal. As this distance increases, the inductance in the connecting trace makes the capacitor less
effective. The designer should strive for distances of less than 0.1 inch between the device power terminals
and the ceramic capacitors.
Sockets – Sockets are not recommended for high-speed operational amplifiers. The additional lead
inductance in the socket pins will often lead to stability problems. Surface-mount packages soldered directly
to the printed-circuit board is the best implementation.
Short trace runs/compact part placements – Optimum high-frequency performance is achieved when stray
series inductance has been minimized. To realize this, the circuit layout should be made as compact as
possible, thereby minimizing the length of all trace runs. Particular attention should be paid to the inverting
input of the amplifier. Its length should be kept as short as possible. This will help to minimize stray
capacitance at the input of the amplifier.
Surface-mount passive components – Using surface-mount passive components is recommended for
high-frequency amplifier circuits for several reasons. First, because of the extremely low lead inductance
of surface-mount components, the problem with stray series inductance is greatly reduced. Second, the
small size of surface-mount components naturally leads to a more compact layout thereby minimizing both
stray inductance and capacitance. If leaded components are used, it is recommended that the lead lengths
be kept as short as possible.
general PowerPAD design considerations
The THS403x is available in a thermally enhanced DGN package, which is a member of the PowerPAD family
of packages. This package is constructed using a downset leadframe upon which the die is mounted [see Figure
54(a) and Figure 54(b)]. This arrangement results in the leadframe being exposed as a thermal pad on the
underside of the package [see Figure 54(c)]. Because this thermal pad has direct thermal contact with the die,
excellent thermal performance can be achieved by providing a good thermal path away from the thermal pad.
The PowerPAD package allows for both assembly and thermal management in one manufacturing operation.
During the surface-mount solder operation (when the leads are being soldered), the thermal pad can also be
soldered to a copper area underneath the package. Through the use of thermal paths within this copper area,
heat can be conducted away from the package into either a ground plane or other heat-dissipating device.
The PowerPAD package represents a breakthrough in combining the small area and ease of assembly of
surface mount with the heretofore awkward mechanical methods of heatsinking.
28
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APPLICATION INFORMATION
general PowerPAD design considerations (continued)
DIE
Side View (a)
Thermal
Pad
DIE
End View (b)
Bottom View (c)
NOTE B: The thermal pad is electrically isolated from all terminals in the package.
Figure 54. Views of Thermally Enhanced DGN Package
Although there are many ways to properly heatsink this device, the following steps illustrate the recommended
approach.
Thermal pad area (68 mils x 70 mils) with 5 vias
(Via diameter = 13 mils)
Figure 55. PowerPAD PCB Etch and Via Pattern
1. Prepare the PCB with a top-side etch pattern as shown in Figure 55. There should be etch for the leads as
well as etch for the thermal pad.
2. Place five holes in the area of the thermal pad. These holes should be 13 mils in diameter. They are kept
small so that solder wicking through the holes is not a problem during reflow.
3. Additional vias may be placed anywhere along the thermal plane outside of the thermal pad area. This helps
dissipate the heat generated by the THS403xDGN IC. These additional vias may be larger than the 13-mil
diameter vias directly under the thermal pad. They can be larger because they are not in the thermal pad
area to be soldered so that wicking is not a problem.
4. Connect all holes to the internal ground plane.
5. When connecting these holes to the ground plane, do not use the typical web or spoke via connection
methodology. Web connections have a high thermal-resistance connection that is useful for slowing the
heat transfer during soldering operations. This makes the soldering of vias that have plane connections
easier. In this application, however, low thermal resistance is desired for the most efficient heat transfer.
Therefore, the holes under the THS403xDGN package should connect to the internal ground plane with a
complete connection around the entire circumference of the plated-through hole.
6. The top-side solder mask should leave the terminals of the package and the thermal pad area with its five
holes exposed. The bottom-side solder mask should cover the five holes of the thermal pad area, which
prevents solder from being pulled away from the thermal pad area during the reflow process.
7. Apply solder paste to the exposed thermal pad area and to all the IC terminals.
8. With these preparatory steps in place, the THS403xDGN IC is simply placed in position and run through
the solder reflow operation as any standard surface-mount component. This results in a part that is properly
installed.
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THS4031, THS4032
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SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
general PowerPAD design considerations (continued)
The actual thermal performance achieved with the THS403xDGN in its PowerPAD package depends on the
application. In the example above, if the size of the internal ground plane is approximately 3 inches × 3 inches,
then the expected thermal coefficient, θJA, is about 58.4_C/W. For comparison, the non-PowerPAD version
of the THS403x IC (SOIC) is shown. For a given θJA, the maximum power dissipation is shown in Figure 56 and
is calculated by the following formula:
P
Where:
+
D
ǒ Ǔ
T
–T
MAX A
q JA
PD = Maximum power dissipation of THS403x IC (watts)
TMAX = Absolute maximum junction temperature (150°C)
TA
= Free-ambient air temperature (°C)
θJA = θJC + θCA
θJC = Thermal coefficient from junction to case
θCA = Thermal coefficient from case to ambient air (°C/W)
MAXIMUM POWER DISSIPATION
vs
FREE-AIR TEMPERATURE
Maximum Power Dissipation – W
3.5
DGN Package
θJA = 58.4°C/W
2 oz. Trace And Copper Pad
With Solder
3
2.5
SOIC Package
High-K Test PCB
θJA = 98°C/W
2
TJ = 150°C
DGN Package
θJA = 158°C/W
2 oz. Trace And
Copper Pad
Without Solder
1.5
1
0.5
SOIC Package
Low-K Test PCB
θJA = 167°C/W
0
–40
–20
60
80
0
20
40
TA – Free-Air Temperature – °C
100
NOTE A: Results are with no air flow and PCB size = 3”× 3”
Figure 56. Maximum Power Dissipation vs Free-Air Temperature
More complete details of the PowerPAD installation process and thermal management techniques can be
found in the Texas Instruments technical brief, PowerPAD  Thermally Enhanced Package. This document can
be found at the TI web site (www.ti.com) by searching on the key word PowerPAD. The document can also
be ordered through your local TI sales office. Refer to literature number SLMA002 when ordering.
30
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
general PowerPAD design considerations (continued)
The next thing to be considered is package constraints. The two sources of heat within an amplifier are
quiescent power and output power. The designer should never forget about the quiescent heat generated within
the device, especially multiamplifier devices. Because these devices have linear output stages (Class A-B),
most of the heat dissipation is at low output voltages with high output currents. Figure 57 to Figure 60 shows
this effect, along with the quiescent heat, with an ambient air temperature of 50°C. When using VCC = ±5 V, heat
is generally not a problem, even with SOIC packages. But, when using VCC = ±15 V, the SOIC package is
severely limited in the amount of heat it can dissipate. The other key factor when looking at these graphs is how
the devices are mounted on the PCB. The PowerPAD devices are extremely useful for heat dissipation. But,
the device should always be soldered to a copper plane to fully use the heat dissipation properties of the
PowerPAD. The SOIC package, on the other hand, is highly dependent on how it is mounted on the PCB. As
more trace and copper area is placed around the device, θJA decreases and the heat dissipation capability
increases. The currents and voltages shown in these graphs are for the total package. For the dual amplifier
package (THS4032), the sum of the RMS output currents and voltages should be used to choose the proper
package.
THS4031
MAXIMUM RMS OUTPUT CURRENT
vs
RMS OUTPUT VOLTAGE DUE TO THERMAL LIMITS
VCC = ± 5 V
TJ = 150°C
TA = 50°C
180
1000
Maximum Output
Current Limit Line
| IO | – Maximum RMS Output Current – mA
| IO | – Maximum RMS Output Current – mA
200
160
140
Package With
θJA < = 120°C/W
120
100
SO-8 Package
θJA = 167°C/W
Low-K Test PCB
80
60
40
Safe Operating
Area
20
4
1
2
3
| VO | – RMS Output Voltage – V
VCC = ± 15 V
TJ = 150°C
TA = 50°C
DGN Package
θJA = 58.4°C/W
Maximum Output
Current Limit Line
100
SO-8 Package
θJA = 98°C/W
High-K Test PCB
SO-8 Package
θJA = 167°C/W
Low-K Test PCB
Safe Operating
Area
10
0
0
THS4031
MAXIMUM RMS OUTPUT CURRENT
vs
RMS OUTPUT VOLTAGE DUE TO THERMAL LIMITS
5
0
3
6
9
12
| VO | – RMS Output Voltage – V
15
Figure 58
Figure 57
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
general PowerPAD design considerations (continued)
THS4032
MAXIMUM RMS OUTPUT CURRENT
vs
RMS OUTPUT VOLTAGE DUE TO THERMAL LIMITS
| IO | – Maximum RMS Output Current – mA
200
Maximum Output
Current Limit Line
Package With
θJA ≤ 60°C/W
180
160
140
120
100
SO-8 Package
θJA = 167°C/W
Low-K Test PCB
80
60
Safe Operating Area
40
VCC = ± 5 V
TJ = 150°C
TA = 50°C
Both Channels
SO-8 Package
θJA = 98°C/W
High-K Test PCB
20
0
0
1
2
3
4
| VO | – RMS Output Voltage – V
5
Figure 59
THS4032
MAXIMUM RMS OUTPUT CURRENT
vs
RMS OUTPUT VOLTAGE DUE TO THERMAL LIMITS
| IO | – Maximum RMS Output Current – mA
1000
VCC = ± 15 V
TJ = 150°C
TA = 50°C
Both Channels
Maximum Output
Current Limit Line
100
SO-8 Package
θJA = 98°C/W
High-K Test PCB
10
DGN Package
θJA = 58.4°C/W
Safe Operating Area
1
0
SO-8 Package
θJA = 167°C/W
Low-K Test PCB
3
6
9
12
| VO | – RMS Output Voltage – V
Figure 60
32
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
APPLICATION INFORMATION
evaluation board
An evaluation board is available for the THS4031 (literature number SLOP203) and THS4032 (literature
Number SLOP135). This board has been configured for very low parasitic capacitance in order to realize the
full performance of the amplifier. A schematic of the evaluation board is shown in Figure 61. The circuitry has
been designed so that the amplifier may be used in either an inverting or noninverting configuration. For more
information, please refer to the THS4031 EVM User’s Guide (literature number SLOU038) or the THS4032 EVM
User’s Guide (literature number SLOU039). To order the evaluation board, contact your local TI sales office or
distributor.
VCC+
+
C3
0.1 µF
R4
301 Ω
IN +
C2
6.8 µF
NULL
R5
49.9 Ω
+
R3
49.9 Ω
OUT
THS4031
_
NULL
R2
301 Ω
+
C4
0.1 µF
C1
6.8 µF
IN –
VCC –
R4
49.9 Ω
Figure 61. THS4031 Evaluation Board
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
MECHANICAL INFORMATION
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
PINS **
0.050 (1,27)
8
14
16
A MAX
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MIN
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
DIM
0.020 (0,51)
0.014 (0,35)
14
0.010 (0,25) M
8
0.244 (6,20)
0.228 (5,80)
0.008 (0,20) NOM
0.157 (4,00)
0.150 (3,81)
1
Gage Plane
7
A
0.010 (0,25)
0°– 8°
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.069 (1,75) MAX
0.010 (0,25)
0.004 (0,10)
0.004 (0,10)
4040047 / D 10/96
NOTES: A.
B.
C.
D.
34
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
Falls within JEDEC MS-012
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THS4031, THS4032
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SLOS224C – JULY 1999 – REVISED APRIL 2000
MECHANICAL INFORMATION
DGN (S-PDSO-G8)
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE
0,38
0,25
0,65
8
0,25 M
5
Thermal Pad
(See Note D)
0,15 NOM
3,05
2,95
4,98
4,78
Gage Plane
0,25
1
0°– 6°
4
3,05
2,95
0,69
0,41
Seating Plane
1,07 MAX
0,15
0,05
0,10
4073271/A 04/98
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions include mold flash or protrusions.
The package thermal performance may be enhanced by attaching an external heat sink to the thermal pad.
This pad is electrically and thermally connected to the backside of the die and possibly selected leads.
E. Falls within JEDEC MO-187
PowerPAD is a trademark of Texas Instruments.
POST OFFICE BOX 655303
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THS4031, THS4032
100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
MECHANICAL INFORMATION
FK (S-CQCC-N**)
LEADLESS CERAMIC CHIP CARRIER
28 TERMINAL SHOWN
18
17
16
15
14
13
NO. OF
TERMINALS
**
12
19
11
20
10
A
B
MIN
MAX
MIN
MAX
20
0.342
(8,69)
0.358
(9,09)
0.307
(7,80)
0.358
(9,09)
28
0.442
(11,23)
0.458
(11,63)
0.406
(10,31)
0.458
(11,63)
21
9
22
8
44
0.640
(16,26)
0.660
(16,76)
0.495
(12,58)
0.560
(14,22)
23
7
52
0.739
(18,78)
0.761
(19,32)
0.495
(12,58)
0.560
(14,22)
24
6
68
25
5
0.938
(23,83)
0.962
(24,43)
0.850
(21,6)
0.858
(21,8)
84
1.141
(28,99)
1.165
(29,59)
1.047
(26,6)
1.063
(27,0)
B SQ
A SQ
26
27
28
1
2
3
4
0.080 (2,03)
0.064 (1,63)
0.020 (0,51)
0.010 (0,25)
0.020 (0,51)
0.010 (0,25)
0.055 (1,40)
0.045 (1,14)
0.045 (1,14)
0.035 (0,89)
0.045 (1,14)
0.035 (0,89)
0.028 (0,71)
0.022 (0,54)
0.050 (1,27)
4040140 / D 10/96
NOTES: A.
B.
C.
D.
E.
36
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
This package can be hermetically sealed with a metal lid.
The terminals are gold plated.
Falls within JEDEC MS-004
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100-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
SLOS224C – JULY 1999 – REVISED APRIL 2000
MECHANICAL INFORMATION
JG (R-GDIP-T8)
CERAMIC DUAL-IN-LINE PACKAGE
0.400 (10,20)
0.355 (9,00)
8
5
0.280 (7,11)
0.245 (6,22)
1
4
0.065 (1,65)
0.045 (1,14)
0.310 (7,87)
0.290 (7,37)
0.020 (0,51) MIN
0.200 (5,08) MAX
Seating Plane
0.130 (3,30) MIN
0.063 (1,60)
0.015 (0,38)
0.100 (2,54)
0°–15°
0.023 (0,58)
0.015 (0,38)
0.014 (0,36)
0.008 (0,20)
4040107/C 08/96
NOTES: A.
B.
C.
D.
E.
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
This package can be hermetically sealed with a ceramic lid using glass frit.
Index point is provided on cap for terminal identification only on press ceramic glass frit seal only.
Falls within MIL-STD-1835 GDIP1-T8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
37
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