UTC-IC UT3401

UNISONIC TECHNOLOGIES CO., LTD
UT3401
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
3
DESCRIPTION
The UTC UT3401 is P-channel enhancement mode
Power MOSFET, designed with high density cell, with fast
switching speed, low on-resistance, excellent thermal and
electrical capabilities, operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
2
1
SOT-23
SYMBOL
2.Drain
*Pb-free plating product number: UT3401L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UT3401-AE3-R
UT3401L-AE3-R
UT3401L-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
34A
Lead Plating
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Copyright © 2007 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-109,A
UT3401
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
SYMBOL
VDSS
Gate-Source Voltage
VGSS
RATINGS
-30
UNITS
V
±12
V
Ta =25°C
-4.2
A
Continuous Drain Current (Note 1)
ID
Ta =70°C
-3.5
A
Pulsed Drain Current (Note 2)
IDM
-30
A
Power Dissipation (Note 1)
PD
1.4
W
℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction-to-Ambient
MIN
TYP
65
MAX
90
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
MIN TYP
BVDSS
IDSS
IGSS
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
-30
VGS(TH)
VDS=VGS, ID=-250µA
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
VDS=-5V, ID=-5A
-0.7
RDS(ON)
-1
42
53
80
11
MAX
UNIT
-1
±100
V
µA
nA
-1.3
50
65
120
V
mΩ
mΩ
mΩ
S
Forward Transconductance
gFS
7
DYNAMIC PARAMETERS
Input Capacitance
CISS
954
pF
Output Capacitance
COSS VGS =0V, VDS =-15V, f=1MHz
115
pF
77
pF
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
6.3
ns
VGS=-10V, VDS=-15V
Turn-ON Rise Time
tR
3.2
ns
Turn-OFF Delay Time
tD(OFF) RL=3.6Ω, RG =6Ω
38.2
ns
Turn-OFF Fall-Time
tF
12
ns
Total Gate Charge
QG
9.4
nC
VGS=-4.5V, VDS=-15V, ID=-4A
Gate-Source Charge
QGS
2
nC
3
nC
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VDS=0V, IS=-1A
-0.75
-1
V
Maximum Continuous Drain-Source Diode
IS
-2.2
A
Forward Current
Reverse Recovery Time
tRR
20.2
ns
IF=-4A, dI/dt=100A/µs
11.2
nC
Reverse Recovery Charge
QRR
Note: 1. The value of θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user ' s specific board
design. The current rating is based on the t ≤ 10s thermal resistance rating.
2. Repetitive Rating: Pulse width limited by TJ
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QW-R502-109,A
UT3401
Power MOSFET
TYPICAL CHARACTERISTICS
On-Region Characteristics(Note3)
Transfer Characteristics (Note3)
10
-10V
Continuous Drain Current, I D (A)
Continuous Drain Current, I D (A)
25.00
-4.5V
20.00
-3V
15.00
-2.5V
10.00
5.00
VGS =-2V
0.00
0.00
VDS=-5V
8
6
125℃
4
25℃
2
0
1.00
2.00
3.00
4.00
0
5.00
Drain-Source Voltage, VDSS (V)
Normalized On-Resistance
On-Resistance, RDS(ON) (mΩ)
VGS = -4.5V
40
VGS = 10V
20
0.00
I D=- 3.5 A, VGS=- 10V
1.4
VGS=-2.5V
ID =-1A
1.2
1
0.8
2.00
4.00
6.00
8.00
0
10.00
25
50
100
75
125
150 175
Temperature (°C)
On-Resistance vs.
Gate-Source Voltage (Note3)
Body-Diode Characteristics(Note3)
1.0E+01
Maximum Continuous Drain-Source
Diode Forward Current, -I S (A)
On-Resistance, RDS(ON) (mΩ)
3
1.6
Drain Current , I D (A)
190
2.5
1.8
VGS = -2.5V
60
2
On-Resistance vs.
Junction Temperature (Note3)
100
80
1.5
1
Gate-Source Voltage, VGSS (V)
On-Resistance vs.
Drain Current and Gate Voltage(Note3)
120
0.5
170
150
ID=-2A
130
110
90
125℃
70
50
25℃
30
10
0
3
4
6
8
10
Gate-Source Voltage, -VGS (V)
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1.0E+00
1.0E-01
125℃
1.0E-02
1.0E-03
25℃
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Source-Drain Voltage, -VSD (V)
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QW-R502-109,A
UT3401
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Gate-Charge Characteristics
Gate-Source Voltage, -VGS (V)
5
Capacitance Characteristics
1400
VDS=-15V
I D=-4A
1200
Capacitance (pF)
4
3
2
1000
C ISS
800
600
400
C OSS
1
0
0
0
2
10
4
6
8
Total Gate Charge, Qg (nC)
12
0
Maximum Forward Biased Safe
Operating Area (Note 4)
40
TJ(Max )=150°C
TA=25°C
5
10
15
20
25
Drain-Source Voltage, -VDS (V)
TJ(MAX)=150°C
TA=25°C
30
100µs
RDS(ON)
10.0 limited
1ms
0.1s
1.0
30
Single Pulse Power Rating
Junction-to-Ambient (Note 4)
10µs
Power (W)
100.0
Continuous Drain Current, -ID (A)
C RSS
200
10ms
1s
20
10
10s
DC
0.1
0.1
1
10
100
Drain-Source Voltage, -VDS (V)
Normalized Transient Thermal
Resistance, ZθJA
10
0.01
0.1
1
10
100
1000
Pulse Width (s)
Normalized Maximum Transient Thermal
Impedance
D=T on /T
T J,PK=T A+PDM .Z θJA .R θJA
R θJA=90°C/W
0
0.001
Note:
3. The static characteristics obtained using80µs
pulses, duty cycle 0.5% max.
4. The measurements are performed with the
2
device mounted on 1in FR-4 board with 2oz.
Copper, in a still air environment with TA=25°C.
The SOA curve provides a single pulse rating.
In descending order
D=0.5, 0. 3, 0.1, 0.05, 0.02, 0.01,
single pulse
1
PD
0.1
T on
T
Single Pulse
0.01
0.00001
0.0001
0. 001
0.01
0.1
1
10
100
1000
Pulse Width (s)
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4 of 5
QW-R502-109,A
UT3401
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-109,A