CENTRAL CMPDM7002AE_1310

CMPDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM7002AE
is a special ESD protected version of the 2N7002
enhancement-mode N-Channel MOSFET designed for
high speed pulsed amplifier and driver applications.
MARKING CODE: C702E
SOT-23 CASE
APPLICATIONS:
• Load/Power switches
• DC-DC converter circuits
• Power management
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
♦ Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
♦
• ESD protection up to 1800V
• 350mW power dissipation
• Low gate charge
• Low rDS(ON)
SYMBOL
VDS
VDG
IDSS
VGS(th)
VSD
VDS=60V, VGS=0, TJ=125°C
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=0, IS=115mA
UNITS
V
60
V
VGS
ID
20
V
300
mA
IDM
PD
800
mA
350
mW
TJ, Tstg
ΘJA
-65 to +150
°C
357
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=20V, VDS=0
♦ IDSS
VDS=60V, VGS=0
♦ BVDSS
60
60
70
1.2
1.5
0.5
MAX
10
UNITS
μA
100
nA
500
μA
2.0
V
1.1
V
Ω
V
♦ rDS(ON)
VGS=10V, ID=500mA
1.0
1.4
rDS(ON)
VGS=5.0V, ID=100mA
1.1
1.8
Ω
rDS(ON)
VGS=2.5V, ID=10mA
VDS=10V, ID=200mA
3.0
6.0
Ω
gFS
Crss
220
mS
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
5.0
pF
Ciss
50
pF
Coss
VDS=25V, VGS=0, f=1.0MHz
25
pF
♦ Enhanced specification
R3 (3-October 2013)
CMPDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
TEST CONDITIONS
TYP
MAX
VDS=10V, VGS=4.5V, ID=200mA
0.5
VDS=10V, VGS=4.5V, ID=200mA
0.2
Qgd
ton
VDS=10V, VGS=4.5V, ID=200mA
VDD=30V, VGS=10V, ID=200mA
toff
RG=25Ω, RL=150Ω
0.14
UNITS
nC
nC
nC
20
ns
45
ns
SOT-23 CASE - MECHANICAL OUTLINE
2
1
3
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: C702E
R3 (3-October 2013)
w w w. c e n t r a l s e m i . c o m
CMPDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (3-October 2013)
w w w. c e n t r a l s e m i . c o m