CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications. MARKING CODE: C702E SOT-23 CASE APPLICATIONS: • Load/Power switches • DC-DC converter circuits • Power management MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage ♦ Continuous Drain Current Maximum Pulsed Drain Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: ♦ • ESD protection up to 1800V • 350mW power dissipation • Low gate charge • Low rDS(ON) SYMBOL VDS VDG IDSS VGS(th) VSD VDS=60V, VGS=0, TJ=125°C VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=0, IS=115mA UNITS V 60 V VGS ID 20 V 300 mA IDM PD 800 mA 350 mW TJ, Tstg ΘJA -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 ♦ IDSS VDS=60V, VGS=0 ♦ BVDSS 60 60 70 1.2 1.5 0.5 MAX 10 UNITS μA 100 nA 500 μA 2.0 V 1.1 V Ω V ♦ rDS(ON) VGS=10V, ID=500mA 1.0 1.4 rDS(ON) VGS=5.0V, ID=100mA 1.1 1.8 Ω rDS(ON) VGS=2.5V, ID=10mA VDS=10V, ID=200mA 3.0 6.0 Ω gFS Crss 220 mS VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss 50 pF Coss VDS=25V, VGS=0, f=1.0MHz 25 pF ♦ Enhanced specification R3 (3-October 2013) CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL SYMBOL Qg(tot) Qgs CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS TYP MAX VDS=10V, VGS=4.5V, ID=200mA 0.5 VDS=10V, VGS=4.5V, ID=200mA 0.2 Qgd ton VDS=10V, VGS=4.5V, ID=200mA VDD=30V, VGS=10V, ID=200mA toff RG=25Ω, RL=150Ω 0.14 UNITS nC nC nC 20 ns 45 ns SOT-23 CASE - MECHANICAL OUTLINE 2 1 3 LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C702E R3 (3-October 2013) w w w. c e n t r a l s e m i . c o m CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R3 (3-October 2013) w w w. c e n t r a l s e m i . c o m