FREESCALE MRF21085LSR3_08

Freescale Semiconductor
Technical Data
Document Number: MRF21085
Rev. 11, 10/2008
RF Power Field Effect Transistor
MRF21085LSR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA,
Pout = 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.6 dB
Drain Efficiency — 23%
IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 90 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465A - 06, STYLE 1
NI - 780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
224
1.28
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.78
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFET
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
1 (Minimum)
M3 (Minimum)
MRF21085LSR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.18
0.21
Vdc
Crss
—
3.6
—
pF
Off Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3
measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz)
Gps
12
13.6
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz)
η
20
23
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz
and f2 +10 MHz referenced to carrier channel power.)
IM3
—
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and
f2 +5 MHz.)
ACPR
—
- 41
- 38
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz)
IRL
—
- 12
-9
dB
1. Part is internally matched both on input and output.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
On Characteristics (DC)
(continued)
MRF21085LSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
13.6
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
36
—
%
Two - Tone Intermodulation Distortion
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
—
- 12
—
dB
P1dB
—
100
—
W
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued)
MRF21085LSR3
RF Device Data
Freescale Semiconductor
3
VBIAS
R3
R1
R4
B1
+
C5
C4
C3
C7
C2
Z4
RF
INPUT
Z1
Z2
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z5
Z6
x 0.084″
x 0.084″
x 0.800″
x 0.050″
x 0.800″
x 0.084″
x 0.084″
x 0.070″
C10
C11
C12
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
RF
OUTPUT
C6
DUT
0.750″
1.015″
0.480″
0.750″
0.610″
0.885″
0.720″
0.800″
C9
+
Z8
Z3
C1
C8
+
0.030″ Glass Teflon®,
Keene GX - 0300 - 55 - 22, εr = 2.55
Etched Circuit Boards
MRF21085 Rev. 3, CMR
Board
PCB
Figure 1. MRF21085L Test Circuit Schematic
Table 5. MRF21085 Test Circuit Component Designations and Values
Designators
Description
B1
Short Ferrite Bead, Fair Rite, #2743019447
C1, C6
43 pF Chip Capacitors, ATC #100B430JCA500X
C2
10 pF Chip Capacitor, ATC #100B100JCA500X
C3, C9
1000 pF Chip Capacitors, ATC #100B102JCA500X
C4, C10
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C5
1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050
C7
2.7 pF Chip Capacitor, ATC #100B2R7JCA500X
C8
10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394
C11, C12
22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
L1
1 Turn, #20 AWG, 0.100″ ID
N1, N2
Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10
R1
1.0 kΩ, 1/8 W Chip Resistor
R2
180 kΩ, 1/8 W Chip Resistor
R3, R4
10 Ω, 1/8 W Chip Resistors
ARCHIVE INFORMATION
R2
VSUPPLY
L1
+
MRF21085LSR3
4
RF Device Data
Freescale Semiconductor
C8
C7
C2
R1
B1
C3
L1
R3
WB1
ARCHIVE INFORMATION
CUT OUT
C5 C4
C1
C10 R4
C9
WB2
C11 C12
C6
MRF21085
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF21085L Test Circuit Component Layout
ARCHIVE INFORMATION
R2
MRF21085LSR3
RF Device Data
Freescale Semiconductor
5
10
−45
ACPR
5
−50
0
−55
1
−35
35
30
−40
−45
25
3rd Order
20
−50
5th Order
−55
15
η
−60
10
7th Order
5
100
−65
30
10
40
4
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion
Products versus Output Power
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−25
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS Avg.) N−CDMA
24
−30
22
−35
−40
1150 mA
−45
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
1000 mA
−30
IM3
−40
ACPR
−50
14
G ps
12
−55
4
−20
16
850 mA
−50
VDD = 28 Vdc
2−Carrier W−CDMA
P
out = 19 W (Avg.)
10 MHz Carrier Spacing
IDQ = 1000 mA
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
18
1300 mA
−10
IRL
20
IDQ = 700 mA
0
η
10
100
2090
2110
2130
2150
2170
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 5. Third Order Intermodulation
Distortion versus Output Power
Figure 6. 2-Carrier W-CDMA Broadband
Performance
14.5
60
−60
2190
42
−24
IMD
40
13
30
η
20
VDD = 28 Vdc
IDQ = 1000 mA
f = 2140 MHz
12
11.5
2
10
Pout, OUTPUT POWER (WATTS)
Figure 7. CW Performance
η, DRAIN EFFICIENCY (%)
13.5
12.5
41
50
G ps
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
14
40
−26
39
−27
38
−28
37
−29
36
−30
IDQ = 1000 mA
f = 2140 MHz
10 MHz Tone Spacing
10
35
0
100 130
−25
η
−31
34
24
25
26
27
28
ARCHIVE INFORMATION
−40
−30
η, DRAIN EFFICIENCY (%)
G ps
15
ARCHIVE INFORMATION
−35
45
VDD = 28 Vdc
IDQ = 1000 mA
f1 = 2135 MHz
f2 = 2145 MHz
IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB)
20
−30
IM3
−25
IMD, INTERMODULATION DISTORTION (dBc)
25
−25
η
VDD = 28 Vdc, IDQ = 1000 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
30
IMD, INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
−32
29
VDD, DRAIN SUPPLY (V)
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
MRF21085LSR3
6
RF Device Data
Freescale Semiconductor
G ps , POWER GAIN (dB)
1150 mA
14
1000 mA
850 mA
13.5
700 mA
13
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
4
100
10
IRL
35
−15
η
VDD = 28 Vdc
Pout = 90 W (PEP)
IDQ = 1000 mA
10 MHz Tone Spacing
30
25
−30
15
Gps
−35
10
2095
2110
−30
3rd Order
2125
2140
2155
−40
2185
2170
f, FREQUENCY (MHz)
Figure 10. Two-Tone Broadband Performance
−20
−25
−25
IMD
Figure 9. Two-Tone Power Gain versus
Output Power
VDD = 28 Vdc
IDQ = 1000 mA
f = 2140 MHz
−20
20
Pout, OUTPUT POWER (WATTS) PEP
+20
3.84 MHz
Channel BW
+30
0
−10
−35
(dB)
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
12.5
−10
40
−40
−20
−30
−40
5th Order
−45
−50
7th Order
−70
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25
−20
−60
−50
−55
0.1
1
10
Df, TONE SPACING (kHz)
Figure 11. Intermodulation Distortion Products
versus Two - Tone Spacing
30
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
f, FREQUENCY (MHz)
Figure 12. 2-Carrier W-CDMA Spectrum
25
ARCHIVE INFORMATION
IDQ = 1300 mA
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
14.5
G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
MRF21085LSR3
RF Device Data
Freescale Semiconductor
7
Zo = 5 Ω
Zload
f = 2110 MHz
f = 2170 MHz
Zsource
f = 2110 MHz
VDD = 28 V, IDQ = 1000 mA, Pout = 19 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2110
1.10 - j3.71
1.23 - j2.10
2140
1.11 - j3.57
1.26 - j1.92
2170
1.12 - j3.40
1.25 - j1.76
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 2170 MHz
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF21085LSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
4X U
(FLANGE)
1
K
2X
2
B
(FLANGE)
D
bbb
M
T A
M
B
M
ARCHIVE INFORMATION
N
ccc
M
R
(LID)
M
T A
M
B
M
M
B
M
ccc
M
T A
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF21085LSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
ARCHIVE INFORMATION
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
MRF21085LSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
11
Oct. 2008
Description
• Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
ARCHIVE INFORMATION
• Data sheet archived. Part no longer manufactured.
• Added Product Documentation and Revision History, p. 10
ARCHIVE INFORMATION
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
MRF21085LSR3
10
RF Device Data
Freescale Semiconductor
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
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© Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF21085LSR3
Document
Number:
RF
Device
Data MRF21085
Rev. 11, 10/2008
Freescale
Semiconductor
11