Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — - 31.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power 945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, + 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 223 1.79 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.56 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C6 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor MRF9060NR1 1 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) 3 3.7 5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) — 0.21 0.4 Vdc gfs — 5.3 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 101 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 53 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.5 — pF Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — - 31.5 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — - 14.5 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Gps — 18 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) η — 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) IRL — - 12.5 — dB On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Off Characteristics MRF9060NR1 2 RF Device Data Freescale Semiconductor B1 B2 + + C7 C6 L1 L2 C4 NOT RECOMMENDED FOR NEW DESIGN RF INPUT Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 VDD + + C15 C16 C17 RF OUTPUT C9 DUT Z11 Z1 C14 Z12 Z13 Z14 Z15 Z16 Z17 C10 C11 C12 Z18 Z10 C13 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.240″ 0.240″ 0.500″ 0.100″ 0.330″ 0.120″ 0.270″ 0.240″ 0.340″ C3 x 0.060″ x 0.060″ x 0.100″ x 0.270″ x 0.270″ x 0.270″ x 0.520″ x 0.520″ x 0.520″ C8 C5 Microstrip Microstrip Microstrip x 0.080″, Taper Microstrip Microstrip x 0.140″, Taper Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 0.060″ 0.360″ 0.060″ 0.130″ 0.300″ 0.210″ 0.600″ 0.290″ 0.340″ x 0.520″ x 0.270″ x 0.270″ x 0.060″ x 0.060″ x 0.060″ x 0.060″ x 0.060″ x 0.060″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead 2743019447 Fair - Rite B2 Long Ferrite Bead 2743029446 Fair - Rite C1, C7, C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C2, C3, C11 0.8 - 8.0 Gigatrim Variable Capacitors 27291SL Johanson C4, C5 11 pF Chip Capacitors (MRF9060NR1) 10 pF Chip Capacitors (MRF9060NBR1) ATC100B110JT500XT ATC100B100JT500XT ATC C6, C15, C16 10 mF, 35 V Tantalum Chip Capacitors T491D106K035AT Kemet C8, C9 10 pF Chip Capacitors ATC100B100JT500XT Newark C10 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC C12 1.7 pF Chip Capacitor ATC100B1R7BT500XT ATC C17 220 mF Electrolytic Chip Capacitor MCAX63V227M13X22 Multicomp L1, L2 12.5 nH Inductors A04T - 5 Coilcraft RF - 35 - 0300 Taconic Board Material 30 mil Glass Teflon®, εr = 2.55 Copper Clad, 2 oz Cu NOT RECOMMENDED FOR NEW DESIGN VGG MRF9060NR1 RF Device Data Freescale Semiconductor 3 C6 VGG C17 VDD B1 B2 L1 INPUT C1 C2 C4 C3 C5 C15 C16 L2 WB1 WB2 CUT OUT AREA NOT RECOMMENDED FOR NEW DESIGN C14 C8 C9 OUTPUT C10 C11 C12 C13 MRF9060M MRF9060MB Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout NOT RECOMMENDED FOR NEW DESIGN C7 MRF9060NR1 4 RF Device Data Freescale Semiconductor 50 Gps 40 VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 450 mA Two−Tone, 100 kHz Tone Spacing 16 15 35 −28 −30 14 IMD −32 13 −34 12 11 930 935 940 945 950 955 −36 960 −10 −12 −14 −16 IRL, INPUT RETURN LOSS (dB) 17 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 45 η IRL −18 f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance IMD, INTERMODULATION DISTORTION (dBc) IDQ = 625 mA G ps , POWER GAIN (dB) 18.5 500 mA 18 450 mA 17.5 275 mA 17 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 16.5 1 10 −15 −20 −25 IDQ = 275 mA −30 −35 450 mA −40 500 mA −45 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 625 mA −50 −55 100 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power −10 20 −30 3rd Order −40 −50 Gps 18 G ps , POWER GAIN (dB) VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz −20 60 5th Order −60 7th Order 16 40 14 30 12 20 −80 VDD = 26 Vdc IDQ = 450 mA f = 945 MHz η 10 −70 50 8 1 10 100 0.1 1 10 0 100 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power η, DRAIN EFFICIENCY (%) 19 IMD, INTERMODULATION DISTORTION (dBc) NOT RECOMMENDED FOR NEW DESIGN 18 NOT RECOMMENDED FOR NEW DESIGN 19 η, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS MRF9060NR1 RF Device Data Freescale Semiconductor 5 60 Gps NOT RECOMMENDED FOR NEW DESIGN G ps , POWER GAIN (dB) 18 40 η 16 20 14 0 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz 12 −20 IMD −40 10 8 −60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency, and IMD versus Output Power MTTF FACTOR (HOURS X AMPS2) 1011 1010 109 108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature NOT RECOMMENDED FOR NEW DESIGN 20 IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS MRF9060NR1 6 RF Device Data Freescale Semiconductor Zo = 2 Ω f = 960 MHz Zsource f = 930 MHz Zload f = 960 MHz VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz Zsource Ω Zload Ω 930 0.63 + j0.57 1.8 + j0.84 945 0.60 + j0.41 1.7 + j0.55 960 0.57 + j0.45 1.6 + j0.36 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN f = 930 MHz Figure 10. Series Equivalent Source and Load Impedance MRF9060NR1 RF Device Data Freescale Semiconductor 7 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PACKAGE DIMENSIONS MRF9060NR1 8 RF Device Data Freescale Semiconductor MRF9060NR1 RF Device Data Freescale Semiconductor 9 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN MRF9060NR1 10 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 12 Sept. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Added Product Documentation and Revision History, p. 11 13 June 2009 • Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 1 • Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 11 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages MRF9060NR1 RF Device Data Freescale Semiconductor 11 Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF9060NR1 Document Number: MRF9060N Rev. 13, 6/2009 12 RF Device Data Freescale Semiconductor