Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030MR1 MRF9030MBR1 • Typical Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 20 dB Efficiency — 41% (Two Tones) IMD — - 31 dBc • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. • 200_C Capable Plastic Package • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF9030MR1 CASE 1337 - 03, STYLE 1 TO - 272- 2 PLASTIC MRF9030MBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, + 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 139 0.93 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 1.08 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions ARCHIVE INFORMATION ARCHIVE INFORMATION Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model MRF9030MR1 MRF9030MBR1 C7 (Minimum) C6 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF9030MR1 MRF9030MBR1 1 Table 5. Electrical Characteristics (Tc = 25°c Unless Otherwise Noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 3 3.8 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) — 0.23 0.4 Vdc gfs — 2.7 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 49 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 27 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.2 — pF Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 20 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 41 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — - 31 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — - 13 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 20 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 40.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — - 12 — dB Off Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Functional Tests (In Freescale Test Fixture) ARCHIVE INFORMATION ARCHIVE INFORMATION On Characteristics MRF9030MR1 MRF9030MBR1 2 RF Device Data Freescale Semiconductor B2 B1 VDD VGG + C8 L1 L2 C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z9 C15 + + C16 C17 C18 C9 DUT Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 C14 C1 C2 ARCHIVE INFORMATION RF OUTPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C3 C4 C10 C6 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.200″ x 0.270″ Microstrip 0.330″ x 0.270″ Microstrip 0.140″ x 0.270″ x 0.520″, Taper 0.040″ x 0.520″ Microstrip 0.090″ x 0.520″ Microstrip 0.370″ x 0.520″ Microstrip (MRF9030MR1) 0.290″ x 0.520″ Microstrip (MRF9030MBR1) 0.130″ x 0.520″ Microstrip (MRF9030MR1) 0.210″ x 0.520″ Microstrip (MRF9030MBR1) Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board C11 C12 C13 0.360″ x 0.270″ Microstrip 0.050″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.220″ x 0.060″ Microstrip 0.100″ x 0.060″ Microstrip 0.870″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Taconic RF - 35- 0300, εr = 3.5 Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead, Surface Mount 95F786 Newark B2 Long Ferrite Bead, Surface Mount 95F787 Newark C1, C7, C14, C15 47 pF Chip Capacitors 100B470JP 500X ATC C2 0.6- 4.5 Variable Capacitor, Gigatrim 44F3360 Newark C3, C11 3.9 pF Chip Capacitors 100B3R6BP 500X ATC C4, C12 0.8- 8.0 Variable Capacitors, Gigatrim 44F3360 Newark C5, C6 6.8 pF Chip Capacitors 100B7R5JP 500X ATC C8, C16, C17 10 μF, 35 V Tantulum Chip Capacitors 93F2975 Newark C9, C10 10 pF Chip Capacitors 100B100JP 500X ATC C13 1.8 pF Chip Capacitor (MRF9030MR1) 0.6- 4.5 Variable Capacitor, Gigatrim (MRF9030MBR1) 100B1R8BP 44F3360 ATC Newark C18 220 μF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Coilcraft Inductors A04T- 5 Coilcraft WB1, WB2 20 mil Brass Shim (0.250 x 0.250) RF - Design Lab RF - Design Lab PCB Etched Circuit Board 900 MHz μ250/Viper Rev 02 DSelectronics ARCHIVE INFORMATION RF INPUT C7 + MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 3 C18 C8 VGG B1 VDD B2 C7 C16 C17 C15 L1 C2 C5 C14 L2 CUT OUT AREA C4 WB1 C3 C6 C9 WB2 C10 C11 C12 C13 ARCHIVE INFORMATION 900 MHz Rev 02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout (MRF9030MR1) C18 C8 VGG B2 VDD B1 C7 C15 L1 C2 WB1 C3 C4 C6 WB2 CUT OUT AREA C1 C5 C16 C17 L2 C9 C14 C10 C11 C12 C13 ARCHIVE INFORMATION C1 MRF9030M Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. 930 - 960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 4 RF Device Data Freescale Semiconductor 45 Gps 20 40 η 19 35 18 −30 IMD 17 −32 IRL 16 VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two−Tone, 100 kHz Tone Spacing 14 930 935 940 945 950 955 −36 −38 960 −12 −14 −16 −18 f, FREQUENCY (MHz) Figure 4. Class AB Broadband Circuit Performance 20.5 300 mA 20 250 mA 19.5 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 200 mA 19 18.5 0.1 −15 −20 −25 −30 −35 IDQ = 200 mA −40 300 mA −45 −50 250 mA −55 1 10 100 0.1 VDD = 26 Vdc 375 mA f1 = 945 MHz f2 = 945.1 MHz 1 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Power Gain versus Output Power Figure 6. Intermodulation Distortion versus Output Power −10 22 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz −20 −30 20 3rd Order −40 −50 5th Order −60 7th Order 1 10 100 60 Gps 50 18 40 16 30 14 20 12 −70 −80 0.1 100 10 Pout, OUTPUT POWER (WATTS) PEP 10 0.1 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz η 1 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Power Gain and Efficiency versus Output Power η, DRAIN EFFICIENCY (%) IDQ = 375 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 21 IMD, INTERMODULATION DISTORTION (dBc) 21.5 IMD, INTERMODULATION DISTORTION (dBc) ARCHIVE INFORMATION 15 −34 −10 ARCHIVE INFORMATION G ps , POWER GAIN (dB) 21 IRL, INPUT RETURN LOSS (dB) 50 IMD, INTERMODULATION DISTORTION (dBc) 22 h , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 10 0 100 MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 5 G ps , POWER GAIN (dB) 20 60 Gps 40 20 18 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz η 16 14 12 10 0.1 0 −20 −40 IMD 1 10 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 22 −60 100 ARCHIVE INFORMATION Figure 9. Power Gain, Efficiency and IMD versus Output Power ARCHIVE INFORMATION Pout, OUTPUT POWER (WATTS) PEP MRF9030MR1 MRF9030MBR1 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION Zo = 5 Ω Zsource f = 930 MHz Zload f = 960 MHz f = 960 MHz f = 930 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz Zload Ω Zsource Ω 930 1.07 + j0.160 3.53 - j0.20 945 1.14 + j0.385 3.41 - j0.24 960 1.17 + j0.170 3.60 - j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload Note: = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance (MRF9030MR1) MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION ARCHIVE INFORMATION Zo = 5 Ω Zload Zsource f = 960 MHz f = 960 MHz f = 930 MHz f = 930 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) Zload Ω f MHz Zsource Ω 930 1.0 - j0.18 3.05 - j0.09 945 1.0 - j0.10 3.00 - j0.07 960 1.0 - j0.03 2.95 - j0.03 Zsource = Test circuit impedance as measured from gate to ground. Zload Note: = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 8 RF Device Data Freescale Semiconductor NOTES MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 9 NOTES MRF9030MR1 MRF9030MBR1 10 RF Device Data Freescale Semiconductor NOTES MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MRF9030MR1 MRF9030MBR1 12 RF Device Data Freescale Semiconductor MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 13 MRF9030MR1 MRF9030MBR1 14 RF Device Data Freescale Semiconductor 2X aaa M A E1 B r1 C A B GATE LEAD D1 2X ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ DRAIN LEAD b1 aaa M D C A 2 E DRAIN ID PIN 3 1 NOTE 8 E2 VIEW Y - Y c1 H F ZONE "J" DATUM PLANE A A1 A2 7 E2 Y Y C SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 1337 - 03 ISSUE C TO - 272 - 2 PLASTIC MRF9030MBR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .193 .199 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 5.05 4.90 .28 .18 1.73 1.60 .10 MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. 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Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF9030MR1 MRF9030MBR1 MRF9030M Rev. 9, 5/2006 16 RF Device Data Freescale Semiconductor