TI TS5A23157RSER

TS5A23157
www.ti.com ................................................................................................................................................................ SCDS165D – MAY 2004 – REVISED MAY 2008
DUAL 10-Ω SPDT ANALOG SWITCH
FEATURES
1
•
•
•
•
•
•
•
•
•
Specified Break-Before-Make Switching
Low ON-State Resistance (10 Ω)
Control Inputs Are 5-V Tolerant
Low Charge Injection
Excellent ON-Resistance Matching
Low Total Harmonic Distortion
1.8-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
DGS PACKAGE
(TOP VIEW)
IN1
1
10
NO1
2
9
NC1
GND
3
8
V+
NO2
4
7
NC2
IN2
5
6
COM2
COM1
RSE PACKAGE
(TOP VIEW)
COM1
IN1
1
APPLICATIONS
NO1
•
•
•
•
Sample-and-Hold Circuits
Battery-Powered Equipment
Audio and Video Signal Routing
Communication Circuits
9
NC1
2
8
V+
GND
3
7
NC2
NO2
4
6
COM2
10
5
IN2
DESCRIPTION/ORDERING INFORMATION
The TS5A23157 is a dual single-pole double-throw (SPDT) analog switch designed to operate from 1.65 V to
5.5 V. This device can handle both digital and analog signals. Signals up to 5.5 V (peak) can be transmitted in
either direction.
ORDERING INFORMATION
TA
–40°C to 85°C
(1)
(2)
(3)
PACKAGE
(1) (2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING (3)
VSSOP (MSOP-10) – DGS
Tape and reel
TS5A23157DGSR
JBR
QFN – RSE
Tape and reel
TS5A23157RSER
JB_
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
RSE: The actual top-side marking has one additional character that designates the assembly/test site.
FUNCTION TABLE
INPUT NC TO COM, NO TO COM,
IN
COM TO NC COM TO NO
L
ON
OFF
H
OFF
ON
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2008, Texas Instruments Incorporated
TS5A23157
SCDS165D – MAY 2004 – REVISED MAY 2008 ................................................................................................................................................................ www.ti.com
SUMMARY OF CHARACTERISTICS
Configuration
2:1 Multiplexer/Demultiplexer
(2 × SPDT)
Number of channels
2
ON-state resistance (ron)
10 Ω
ON-state resistance match
between channels (Δron)
0.15 Ω
ON-state resistance flatness
(ron(flat))
4Ω
Turn-on/turn-off time (tON/tOFF)
5.7 ns/3.8 ns
Break-before-make time (tBBM)
0.5 ns
Charge injection (QC)
7 pC
Bandwidth (BW)
220 MHz
OFF isolation (OSIO)
–65 dB at 10 MHz
Crosstalk 9XTALK)
–66 dB at 10 MHz
Total harmo nic distortion (THD)
0.01%
Leakage current
(ICOM(OFF)/INC(OFF))
±1 µA
Package options
10-pin DGS and RSE
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
Supply voltage range (2)
–0.5
6.5
V
VNC
VNO
VCOM
Analog voltage range (2) (3) (4)
–0.5
V+ + 0.5
V
II/OK
Analog port diode current
VNC, VNO, VCOM < 0 or VNC, VNO,
VCOM > V+
±50
mA
INC
INO
ICOM
On-state switch current
VNC, VNO, VCOM = 0 to V+
±50
mA
VIN
Digital input voltage range (2) (3)
6.5
V
IIK
Digital input clamp current
–50
mA
±100
mA
–0.5
VIN < 0
Continuous current through V+ or GND
θJA
Package thermal impedance (5)
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
2
DGS package
56.5
RSE package
243
–65
150
UNIT
°C/W
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
The package thermal impedance is calculated in accordance with JESD 51-7.
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TS5A23157
www.ti.com ................................................................................................................................................................ SCDS165D – MAY 2004 – REVISED MAY 2008
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP (1)
MAX
UNIT
Analog Switch
Analog signal range
VCOM,
VNO, VNC
ON-state resistance
ron
0 ≤ VNO or VNC ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 10
Full
4.5 V
ON-state resistance
match between
channels
Δron
VNO or VNC = 3.15 V,
ICOM = –30 mA,
Switch ON,
See Figure 10
25°C
4.5 V
0.15
Ω
ON-state resistance
flatness
ron(flat)
0 ≤ VNO or VNC ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 10
25°C
4.5 V
4
Ω
NC, NO
OFF leakage current
INC(OFF),
INO(OFF)
VNC or VNO = 0 to V+,
VCOM = 0 to V+,
Switch OFF,
See Figure 11
25°C
NC, NO
ON leakage current
INC(ON),
INO(ON)
VNC or VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 11
25°C
COM
ON leakage current
ICOM(ON)
VNC or VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 11
25°C
0
Full
Full
Full
5.5 V
5.5 V
5.5 V
–1
0.05
V+
V
10
Ω
1
–1
1
–0.1
0.1
–1
1
–0.1
0.1
–1
1
µA
µA
µA
Digital Inputs (IN12, IN2) (2)
Input logic high
VIH
Full
Input logic low
VIL
Full
Input leakage current
(1)
(2)
IIH, IIL
VIN = 5.5 V or 0
25°C
Full
V+
× 0.7
V
V+
× 0.3
5.5 V
–1
–1
0.05
1
1
V
µA
TA = 25°C
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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SCDS165D – MAY 2004 – REVISED MAY 2008 ................................................................................................................................................................ www.ti.com
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP (1)
MAX
UNIT
Dynamic
Turn-on time
tON
VNC = GND and VNO = V+ RL = 500 Ω,
or
CL = 50 pF,
VNC = V+ and VNO = GND, See Figure 13
Full
4.5 V to
5.5 V
1.7
5.7
ns
Turn-off time
tOFF
VNC = GND and VNO = V+ RL = 500 Ω,
or
CL = 50 pF,
VNC = V+ and VNO = GND, See Figure 13
Full
4.5 V to
5.5 V
0.8
3.8
ns
Break-before-make
time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 14
Full
4.5 V to
5.5 V
0.5
Charge injection
QC
VNC = VNO = V+/2,
RL = 50 Ω,
See Figure 18
25°C
5V
7
pC
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 12
25°C
5V
5.5
pF
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 12
25°C
5V
17.5
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 12
25°C
5V
17.5
pF
ns
Digital input
capacitance
CIN
VIN = V+ or GND,
See Figure 12
25°C
5V
2.8
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 15
25°C
4.5 V
220
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 16
25°C
4.5 V
–65
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 17
25°C
4.5 V
–66
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to
20 kHz,
See Figure 19
25°C
4.5 V
0.01
%
Switch ON or
OFF
Supply
Positive supply
current
I+
VIN = V+ or GND,
Change in
supply current
ΔI+
VIN = V+ – 0.6 V
4
25°C
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Full
Full
5.5 V
5.5 V
1
10
500
µA
µA
Copyright © 2004–2008, Texas Instruments Incorporated
Product Folder Link(s): TS5A23157
TS5A23157
www.ti.com ................................................................................................................................................................ SCDS165D – MAY 2004 – REVISED MAY 2008
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP (1)
MAX
UNIT
Analog Switch
Analog signal range
VCOM,
VNO, VNC
ON-state resistance
ron
ON-state resistance
match between
channels
Δron
ON-state resistance
flatness
0
V+
V
18
Ω
0 ≤ VNO or VNC ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 10
Full
3V
VNO or VNC = 2.1 V,
ICOM = –24 mA,
Switch ON,
See Figure 10
25°C
3V
0.2
Ω
ron(flat)
0 ≤ VNO or VNC ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 12
25°C
3V
9
Ω
NC, NO
OFF leakage current
INC(OFF),
INO(OFF)
VNC or VNO = 0 to V+,
VCOM = 0 to V+,
Switch OFF,
See Figure 11
25°C
NC, NO
ON leakage current
INC(ON),
INO(ON)
VNC or VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 11
25°C
COM
ON leakage current
ICOM(ON)
VNC or VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 11
25°C
Full
Full
Full
3.6 V
3.6 V
3.6 V
–1
0.05
1
–1
1
–0.1
0.1
–1
1
–0.1
0.1
–1
1
µA
µA
µA
Digital Inputs (IN12, IN2) (2)
Input logic high
VIH
Full
Input logic low
VIL
Full
Input leakage current
IIH, IIL
25°C
VIN = 5.5 V or 0
Full
V+
× 0.7
V
V+
× 0.3
3.6 V
–1
0.05
1
–1
1
V
µA
Dynamic
Turn-on time
tON
VNC = GND and VNO = V+
or
VNC = V+ and VNO = GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 13
Full
3 V to
3.6 V
2.5
7.6
ns
Turn-off time
tOFF
VNC = GND and VNO = V+
or
VNC = V+ and VNO = GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 13
Full
3 V to
3.6 V
1.5
5.3
ns
Break-before-make
time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 14
Full
3 V to
3.6 V
0.5
ns
Charge injection
QC
RL = 50 Ω,
CL = 0.1 nF,
See Figure 18
25°C
3.3 V
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 15
25°C
3V
220
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 16
25°C
3V
–65
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 17
25°C
3V
–66
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to
20 kHz,
See Figure 19
25°C
3V
0.015
%
Switch ON or OFF
3
pC
Supply
Positive supply
current
I+
VIN = V+ or GND,
Change in
supply current
ΔI+
VIN = V+ – 0.6 V
(1)
(2)
25°C
Full
Full
3.6 V
3.6 V
1
10
500
µA
µA
TA = 25°C
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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SCDS165D – MAY 2004 – REVISED MAY 2008 ................................................................................................................................................................ www.ti.com
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP (1)
MAX
UNIT
Analog Switch
Analog signal range
VCOM,
VNO, VNC
ON-state resistance
ron
ON-state resistance
match
between channels
Δron
ON-state resistance
flatness
0
V+
V
45
Ω
0 ≤ VNO or VNC ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 10
Full
2.3 V
VNO or VNC = 1.6 V,
ICOM = –8 mA,
Switch ON,
See Figure 10
25°C
2.3 V
0.5
Ω
ron(flat)
0 ≤ VNO or VNC ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 10
25°C
2.3 V
27
Ω
NC, NO
OFF leakage current
INC(OFF),
INO(OFF)
VNC or VNO = 0 to V+,
VCOM = 0 to V+,
Switch OFF,
See Figure 11
25°C
NC, NO
ON leakage current
INC(ON),
INO(ON)
VNC or VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 11
25°C
COM
ON leakage current
ICOM(ON)
VNC or VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 11
25°C
Full
Full
Full
2.7 V
2.7 V
2.7 V
–1
0.05
1
–1
1
–0.1
0.1
–1
1
–0.1
0.1
–1
1
µA
µA
µA
Digital Inputs (IN12, IN2) (2)
Input logic high
VIH
Full
Input logic low
VIL
Full
Input leakage current
IIH, IIL
25°C
VIN = 5.5 V or 0
Full
V+
× 0.7
V
V+
× 0.3
2.7 V
–1
0.05
1
–1
1
V
µA
Dynamic
Turn-on time
tON
VNC = GND and VNO = V+ RL = 500 Ω,
or
CL = 50 pF,
VNC = V+ and VNO = GND, See Figure 13
Full
2.3 V to
2.7 V
3.5
14
ns
Turn-off time
tOFF
VNC = GND and VNO = V+ RL = 500 Ω,
or
CL = 50 pF,
VNC = V+ and VNO = GND, See Figure 13
Full
2.3 V to
2.7 V
2
7.5
ns
Break-before-make
time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 14
Full
2.3 V to
2.7 V
0.5
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 15
25°C
2.3 V
220
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 16
25°C
2.3 V
–65
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 17
25°C
2.3 V
–66
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to
20 kHz,
See Figure 19
25°C
2.3 V
0.025
%
Switch ON or OFF
ns
Supply
Positive supply
current
I+
VIN = V+ or GND,
Change in
supply current
ΔI+
VIN = V+ – 0.6 V
(1)
(2)
6
25°C
Full
Full
2.7 V
2.7 V
1
10
500
µA
µA
TA = 25°C
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS5A23157
www.ti.com ................................................................................................................................................................ SCDS165D – MAY 2004 – REVISED MAY 2008
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP (1)
MAX
UNIT
Analog Switch
Analog signal range
VCOM,
VNO, VNC
ON-state resistance
ron
0 ≤ VNO or VNC ≤ V+,
ICOM = –4 mA,
Switch ON,
See Figure 10
Full
1.65 V
ON-state resistance
match between
channels
Δron
VNO or VNC = 1.15 V,
ICOM = –4 mA,
Switch ON,
See Figure 10
25°C
1.65 V
1
Ω
ON-state resistance
flatness
ron(flat)
0 ≤ VNO or VNC ≤ V+,
ICOM = –4 mA,
Switch ON,
See Figure 10
25°C
1.65 V
110
Ω
NC, NO
OFF leakage current
INC(OFF),
INO(OFF)
VNC or VNO = 0 to V+,
VCOM = 0 to V+,
Switch OFF,
See Figure 11
25°C
NC, NO
ON leakage current
INC(ON),
INO(ON)
VNC or VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 11
25°C
COM
ON leakage current
ICOM(ON)
VNC or VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 11
25°C
0
Full
Full
Full
1.95 V
1.95 V
1.95 V
–1
0.05
V+
V
140
Ω
1
–1
1
–0.1
0.1
–1
1
–0.1
0.1
–1
1
µA
µA
µA
Digital Inputs (IN12, IN2) (2)
Input logic high
VIH
Full
Input logic low
VIL
Full
Input leakage current
IIH, IIL
25°C
VIN = 5.5 V or 0
Full
V+
× 0.75
V
V+
× 0.25
1.95 V
–1
0.05
1
–1
1
V
µA
Dynamic
Turn-on time
tON
VNC = GND and VNO = V+ RL = 500 Ω,
or
CL = 50 pF,
VNC = V+ and VNO = GND, See Figure 13
Full
1.65 V
to
1.95 V
7
24
ns
Turn-off time
tOFF
VNC = GND and VNO = V+ RL = 500 Ω,
or
CL = 50 pF,
VNC = V+ and VNO = GND, See Figure 13
Full
1.65 V
to
1.95 V
3
13
ns
Break-before-make
time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 14
Full
1.65 V
to
1.95 V
0.5
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 15
25°C
1.8 V
220
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 16
25°C
1.8 V
–60
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 17
25°C
1.8 V
–66
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to
20 kHz,
See Figure 19
25°C
1.8 V
0.015
%
Switch ON or OFF
ns
Supply
Positive supply
current
I+
VIN = V+ or GND,
Change in
supply current
ΔI+
VIN = V+ – 0.6 V
(1)
(2)
25°C
Full
Full
1.95 V
1.95 V
1
10
500
µA
µA
TA = 25°C
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Submit Documentation Feedback
Copyright © 2004–2008, Texas Instruments Incorporated
Product Folder Link(s): TS5A23157
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SCDS165D – MAY 2004 – REVISED MAY 2008 ................................................................................................................................................................ www.ti.com
TYPICAL CHARACTERISTICS
20
140
TA = 255C
120
V+ = 1.65 V
16
80
ron − Ω
ron − Ω
100
60
V+ = 2.3 V
40
12
8
V+ = 3 V
20
V+ = 4.5 V
0
4
0
1
2
TA = +855C
TA = +255C
TA = -405C
3
VCOM − V
4
5
0
0.5
Figure 1. ron vs VCOM
1
1.5
2
VCOM − V
2.5
3
3.5
80
100
Figure 2. ron vs VCOM (V+ = 3 V)
5
10
INC(OFF), INO(OFF),
INC(ON), INO(ON), and
ICOM(ON)
OFF
TA = +85°C
TA = +25°C
TA = −40°C
4
3
ron − W
Leakage − nA
8
6
ON
2
1
0
−1
−60
4
0
1
2
3
VCOM − V
4
5
−40
0
20
40
60
Temperature − 5C
Figure 3. ron vs VCOM (V+ = 5 V)
Figure 4. Leakage Current vs Temperature
(V+ = 5.5 V)
5
12
tON
TA = 25°C
10
4
8
6
tON/tOFF − ns
tON/tOFF − ns
−20
tON
4
tOFF
3
2
tOFF
2
0
1.5
1
2
2.5
3
3.5
4
4.5
V+ − Supply Voltage − V
5
5.5
0
−60
−40
Figure 5. tON and tOFF vs V+
8
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−20
0
20
40
TA − Temperature − 5C
60
80
100
Figure 6. tON and tOFF vs Temperature
(V+ = 5 V)
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Product Folder Link(s): TS5A23157
TS5A23157
www.ti.com ................................................................................................................................................................ SCDS165D – MAY 2004 – REVISED MAY 2008
TYPICAL CHARACTERISTICS (continued)
10
0.0020
0.0018
0
−20
0.0016
Bandwidth
THD + Noise − %
−10
Loss − dB
−30
−40
−50
Off-Isolation
−60
−70
TA = 25°C
−80
−90
−100
0.1
0.0014
0.0012
0.0010
0.0008
0.0006
0.0004
0.0000
1
TA = 25°C
0.0002
Crosstalk
10
Frequency − MHz
100
1000
Figure 7. Frequency Response (V+ = 3 V)
100
1000
Frequency −Hz
10000
Figure 8. Total Harmonic Distortion (THD)
vs Frequency (V+ = 3 V)
100
90
80
ICC+ − nA
70
60
50
40
30
20
10
0
−60
−40
−20
0
20
40
60
TA − Temperature − 5C
80
100
Figure 9. Power-Supply Current vs Temperature
(V+ = 5 V)
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TS5A23157
SCDS165D – MAY 2004 – REVISED MAY 2008 ................................................................................................................................................................ www.ti.com
PIN DESCRIPTION
PIN NO.
NAME
1
IN1
Digital control to connect COM to NO or NC
DESCRIPTION
2
NO1
Normally open
3
GND
Digital ground
4
NO2
Normally open
5
IN2
Digital control to connect COM to NO or NC
6
COM2
7
NC2
8
V+
9
NC1
10
COM1
Common
Normally closed
Power supply
Normally closed
Common
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
Δron
Difference of ron between channels
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
worst-case input and output conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
worst-case input and output conditions
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) being open
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) being open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (NO to COM or NC to COM) in the ON state
and the output (NC or NO) being open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Minimum input voltage for logic low for the control input (IN)
VIN
Voltage at IN
IIH, IIL
Leakage current measured at IN
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog outputs (COM/NC/NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog outputs (COM/NC/NO) signal when the switch is turning OFF.
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or
COM) output. This is measured in coulombs ) and measured by the total charge induced due to switching of the control
input. Charge injection, QC = CL× ΔVO, CL is the load capacitance and ΔVO is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NC to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON)
Capacitance at the NO port when the corresponding channel (NC to COM) is ON
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
CIN
Capacitance of IN
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state. OFF isolation, OISO = 20 LOG
(VNC/VCOM) dB, VCOM is the input and VNC is the output.
10
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TS5A23157
www.ti.com ................................................................................................................................................................ SCDS165D – MAY 2004 – REVISED MAY 2008
PARAMETER DESCRIPTION (continued)
SYMBOL
DESCRIPTION
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
NC). This is measured at a specific frequency and in dB. Crosstalk, XTALK = 20 log (VNC1/VNO1), VNO1 is the input and
VNC1 is the output.
BW
Bandwidth of the switch. This is the frequency where the gain of an ON channel is –3 dB below the dc gain. Gain is
measured from the equation, 20 log (VNC/VCOM) dB, where VNC is the output and VCOM is the input.
I+
Static power-supply current with the control (IN) pin at V+ or GND
ΔI+
This is the increase in I+ for each control (IN) input that is at the specified voltage, rather than at V+ or GND.
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11
TS5A23157
SCDS165D – MAY 2004 – REVISED MAY 2008 ................................................................................................................................................................ www.ti.com
PARAMETER MEASUREMENT INFORMATION
V+
VNC
NC
VCOM
Channel ON
NO
VNO
COM
r on +
IN
VIN
ICOM
VCOM * VNOńNC
ICOM
W
VIN = VIH or VIL
GND
Figure 10. ON-State Resistance on)
V+
VNC
OFF-State Leakage Current
Channel OFF
VIN = VIH or VIL
VCOM
NC
NO
VNO
COM
ON-State Leakage Current
Channel ON
VIN = VIH or VIL
IN
VIN
VNC or VNO = 0 to V+
or
VCOM = 0 to V+
VNC or VNO = 0 to V+, VCOM = Open
or
VNC or VNO = Open, VCOM = 0 to V+
GND
Figure 11. ON- and OFF-State Leakage Current (ICOM(ON), INC(OFF), INO(OFF), INC(ON), INO(ON))
V+
VCOM
Capacitance
Meter
VBIAS = V+ or GND
VNC
VIN = VIH or VIL
VNO
VBIAS
VIN
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
IN
GND
Figure 12. Capacitance IN, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))
12
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www.ti.com ................................................................................................................................................................ SCDS165D – MAY 2004 – REVISED MAY 2008
PARAMETER MEASUREMENT INFORMATION (continued)
V+
VNC or VNO
NC or NO
CL
VNC
VNO
tON
500 Ω
50 pF
GND
V+
V+
GND
tOFF
500 Ω
50 pF
GND
V+
V+
GND
COM
RL
CL
Logic
Input
IN
Logic
Input
RL
VCOM
NC or NO
VIN
TEST
50%
VIN
50%
tON
GND
Switch
Output
tOFF
90%
VCOM
90%
Figure 13. Turn-On (tON) and Turn-Off (tOFF) Time
tr < 5 ns
tf < 5 ns
V+
VI
COM
RL
CL
IN
Logic
Input
50%
0
NC or NO
VIN
Logic
VIN
Input
VCOM
NC or NO
Switch
Output VCOM
90%
VI = V+/2
RL = 50 Ω
CL = 35 pF
GND
90%
tBBM
Figure 14. Break-Before-Make (tBBM) Time
V+
Network Analyzer
50 W
VNC
Channel ON: NC to COM
NC
COM
Source
Signal
VCOM
Gain + 20 log
NO
50 W
VIN
VCOM
dB
VNC
Network Analyzer Setup
IN
GND
Source Power = 0 dBM
DC Bias = 350 mV
Figure 15. Frequency Response (BW)
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SCDS165D – MAY 2004 – REVISED MAY 2008 ................................................................................................................................................................ www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
50 W
VNC
Channel OFF: NC to COM
NC
COM
Source
Signal
50 W
VCOM
VCOM
dB
VNC
OFF Isolation + 20 log
NO
GND
Network Analyzer Setup
50 W
Source Power = 0 dBM
DC Bias = 350 mV
Figure 16. OFF Isolation (OISO)
V+
Network Analyzer
Channel ON: NC to COM
50 W
VNC
NC
Channel OFF: NO to COM
VCOM
Source
Signal
Crosstalk + 20 log
NO
VNO
VNO
dB
VNC
50 W
GND
50 W
Network Analyzer Setup
Source Power = 0 dBM
DC Bias = 350 mV
Figure 17. Crosstalk (XTALK)
V+
Logic
Input
NC or NO
ON
OFF
∆VOUT
VOUT
COM
RL
VIN
OFF
VOUT
NC or NO
+
VIN
VINL
RGEN
VGEN
VINH
CL
VGEN = 0
IN
RGEN = 0
RL = 1 MΩ
Logic
Input
CL = 35 pF
QC = CL × ∆VOUT
VIN = VIH or VIL
GND
Figure 18. Charge Injection (QC)
14
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TS5A23157
www.ti.com ................................................................................................................................................................ SCDS165D – MAY 2004 – REVISED MAY 2008
PARAMETER MEASUREMENT INFORMATION (continued)
Channel ON: COM to NC
V+/2
VSOURCE = 0.5 V P-P
V+
10 mF
Analyzer
fSOURCE = 600 Hz to 20 kHz
RL
RL = 600 Ω
NC
CL
CL = 50 pF
10 mF
VO
NO
COM
RL
VSOURCE
GND
Figure 19. Total Harmonic Distortion (THD)
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15
PACKAGE OPTION ADDENDUM
www.ti.com
8-Dec-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TS5A23157DGSR
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23157DGSRE4
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23157DGSRG4
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23157DGST
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23157DGSTE4
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23157DGSTG4
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23157RSER
ACTIVE
UQFN
RSE
10
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23157RSERG4
ACTIVE
UQFN
RSE
10
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TS5A23157 :
• Automotive: TS5A23157-Q1
NOTE: Qualified Version Definitions:
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
8-Dec-2009
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
31-Jul-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TS5A23157DGSR
MSOP
DGS
10
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
TS5A23157RSER
UQFN
RSE
10
3000
179.0
8.4
1.75
2.25
0.65
4.0
8.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
31-Jul-2010
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS5A23157DGSR
MSOP
DGS
10
2500
358.0
335.0
35.0
TS5A23157RSER
UQFN
RSE
10
3000
203.0
203.0
35.0
Pack Materials-Page 2
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