TI TS5A3359YZPR

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SCDS214 – OCTOBER 2005
Description
Features
The TS5A3359 is a single-pole triple-throw (SP3T)
analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers a low ON-state resistance
and excellent ON-state resistance matching with the
break-before-make feature, to prevent signal distortion
during the transferring of a signal from one channel to
another. The device has an excellent total harmonic
distortion (THD) performance and consumes very low
power. These features make this device suitable for
portable audio applications.
D Isolation in the Power-Down Mode, V+ = 0
Applications
D Cell Phones
D PDAs
D Portable Instrumentation
D Audio and Video Signal Routing
D Low-Voltage Data Acquisition Systems
D Communication Circuits
D Modems
D Hard Drives
D Computer Peripherals
D Wireless Terminals and Peripherals
D 1.65-V to 5.5-V Single-Supply Operation
YEP OR YZP PACKAGE
(BOTTOM VIEW)
GND
4
NO2
3
Logic
Control
D Specified Break-Before-Make Switching
D Low ON-State Resistance (1 W)
D Control Inputs Are 5.5-V Tolerant
D Low Charge Injection
D Excellent ON-State Resistance Matching
D Low Total Harmonic Distortion (THD)
D Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
D ESD Performance Tested Per JESD 22
− 2000-V Human-Body Model
(A114-B, Class II)
− 1000-V Charged-Device Model (C101)
Summary of Characteristics
V+ = 5 V, TA = 25°C
Triple 3:1 Multiplexer/
Demultiplexer
(1 SP3T)
Configuration
DCT OR DCU PACKAGE
(TOP VIEW)
Number of channels
1
ON-state resistance (ron)
1.1 Ω
0.1 Ω
5
IN2
NO0 1
8 V+
ON-state resistance match (∆ron)
6
IN1
NO1 2
7 COM
ON-state resistance flatness (ron(flat))
6 IN1
Turn-on/turn-off time (tON/tOFF)
5 IN2
Break-before-make time (tBBM)
NO1
2
7
NO0
1
8
COM
V+
NO2 3
GND 4
Logic Control
Charge injection (QC)
Bandwidth (BW)
FUNCTION TABLE
IN2
IN1
COM TO NO,
NO TO COM
L
L
OFF
L
H
COM = NO0
H
L
COM = NO1
H
H
COM = NO2
0.15 Ω
40 ns/35 ns
1 ns
40 pC
100 MHz
OFF isolation (OISO)
−65 dB at 1 MHz
Crosstalk (XTALK)
−66 dB at 1 MHz
Total harmonic distortion (THD)
0.01%
Leakage current(ICOM(OFF)/INO(OFF))
±20 nA
Power-supply current (I+)
0.1 µA
Package option
8-pin, DCT, DCU, YEP,
or YZP
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
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Copyright  2005, Texas Instruments Incorporated
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SCDS214 – OCTOBER 2005
ORDERING INFORMATION
PACKAGE(1)
TA
ORDERABLE PART NUMBER
NanoStar − WCSP (DSBGA)
0.23-mm Large Bump − YEP
−40°C to 85°C
NanoFree − WCSP (DSBGA)
0.23-mm Large Bump − YZP (Pb-free)
TOP-SIDE MARKING(2)
TS5A3359YEPR
Tape and reel
PREVIEW
TS5A3359YZPR
SSOP − DCT
Tape and reel
TS5A3359DCTR
PREVIEW
VSSOP − DCU
Tape and reel
TS5A3359DCUR
JAL_
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package.
(2) DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.
DCU: The actual top-side marking has one additional character that designates the assembly/test site.
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character
to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
Absolute Minimum and Maximum Ratings(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
VNO
VCOM
IK
Supply voltage range(3)
−0.5
6.5
V
Analog voltage range(3)(4)(5)
−0.5
V+ + 0.5
V
INO
ICOM
On-state switch current
VI
IIK
Analog port diode current
VNO, VCOM < 0
On-state peak switch current(6)
Digital input voltage range(3)(4)
VNO, VCOM = 0 to V+
Digital input clamp current
VI < 0
I+
IGND
Continuous current through V+
θJA
Package thermal impedance(7)
−50
UNIT
mA
−200
200
−400
400
−0.5
6.5
−50
mA
V
mA
100
Continuous current through GND
−100
100
DCT/DCU package
227
YEP/YZP package
140
mA
°C/W
Tstg
Storage temperature range
−65
150
°C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified
is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle.
(7) The package thermal impedance is calculated in accordance with JESD 51-7.
2
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SCDS214 – OCTOBER 2005
Electrical Characteristics for 5-V Supply(1)
V+ = 4.5 V to 5.5 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO
0
Peak ON
resistance
rpeak
0 ≤ (VNO) ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
25 °C
ON-state
resistance
VNO = 2.5 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
ron
VNO = 2.5 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
∆ron
0 ≤ (VNO) ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
VNO = 1 V, 1.5 V, 2.5 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
VNO = 1 V, VCOM = 1 V to 4.5 V,
or
VNO = 4.5 V, VCOM = 1 V to 4.5 V,
Switch OFF,
See Figure 14
25°C
Switch OFF,
See Figure 14
25°C
VNO = 1 V, VCOM = Open,
or
VNO = 4.5 V, VCOM = Open,
Switch ON,
See Figure 15
25°C
VNO = 4.5 V, VCOM = 1 V to 4.5 V,
or
VNO = 1 V, VCOM = 1 V to 4.5 V,
Switch OFF,
See Figure 14
25°C
Switch OFF,
See Figure 14
25°C
Switch ON,
See Figure 15
25°C
ON-state
resistance match
between channels
ON-state
resistance flatness
NO
OFF leakage
current
NO
ON leakage
current
COM
OFF leakage
current
COM
ON leakage
current
ron(flat)
INO(OFF)
VNO = 0 to 5.5 V,
INO(PWROFF)
VCOM = 5.5 V to 0,
INO(ON)
ICOM(OFF)
VCOM = 0 to 5.5 V,
ICOM(PWROFF)
VNO = 5.5 V to 0,
ICOM(ON)
VNO = Open, VCOM = 1 V,
or
VNO = Open, VCOM = 4.5 V,
Full
Full
V+
0.8
4.5 V
1.1
1.5
0.7
4.5 V
0.9
1.1
0.1
0.1
25°C
4.5 V
0.1
0.25
Ω
Ω
0.25
−20
5
20
5.5 V
Full
nA
−150
−1
0V
150
0.8
−25
−30
1
25
5
Full
nA
−220
−25
220
8
25
5.5 V
Full
nA
−250
−8
0V
µA
A
30
5.5 V
Full
Ω
0.15
Full
Full
Ω
0.1
4.5 V
Full
V
250
0.1
−50
−30
8
50
5
µA
A
30
5.5 V
nA
Full
−220
220
Full
2.4
5.5
V
Full
0
0.8
V
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Input leakage
current
IIH, IIL
25°C
VI = 5.5 V or 0
Full
5.5 V
−2
2
−20
20
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications
of Slow or Floating CMOS Inputs, literature number SCBA004.
3
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SCDS214 – OCTOBER 2005
Electrical Characteristics for 5-V Supply(1) (continued)
V+ = 4.5 V to 5.5 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
2.5
MAX
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
5V
1
tON
Full
4.5 V to 5.5 V
1
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
5V
1
tOFF
Full
4.5 V to 5.5 V
1
Break-beforemake time
VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C
5V
0.5
tBBM
Full
4.5 V to 5.5 V
0.5
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
25°C
5V
20
pC
Charge
injection
21
23.5
6
10.5
12
8.5
ns
ns
18
23
ns
NO
OFF
capacitance
CNO(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
18
pF
COM
OFF
capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
54
pF
NO
ON
capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
78
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
78
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
5V
2.5
pF
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
5V
75
MHz
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
25°C
5V
−64
dB
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
25°C
5V
−64
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
5V
0.005
%
Bandwidth
OFF isolation
Crosstalk
Total harmonic
distortion
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
5.5 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
4
16
50
1200
nA
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SCDS214 – OCTOBER 2005
Electrical Characteristics for 3.3-V Supply(1)
V+ = 3 V to 3.6 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO,
VNC
0
Peak ON
resistance
rpeak
0 ≤ (VNO) ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
25 °C
ON-state
resistance
VNO = 2 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
ron
VNO = 2 V, 0.8 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
∆ron
0 ≤ (VNO) ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
VNO = 2 V, 0.8 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
VNO = 1 V, VCOM = 1 V to 3 V,
or
VNO = 3 V, VCOM = 1 V to 3 V,
Switch OFF,
See Figure 14
25°C
Switch OFF,
See Figure 14
25°C
VNO = 1 V, VCOM = Open,
or
VNO = 3 V, VCOM = Open,
Switch ON,
See Figure 15
25°C
VNO = 0 V to 3.6 V, VCOM = 1 V,
or
VNO = 3.6 V to 0 V, VCOM = 3 V,
Switch OFF,
See Figure 14
25°C
Switch OFF,
See Figure 14
25°C
Switch ON,
See Figure 15
25°C
ON-state
resistance match
between channels
ON-state
resistance flatness
NO
OFF leakage
current
NO
ON leakage
current
COM
OFF leakage
current
COM
ON leakage
current
ron(flat)
INO(OFF)
VNO = 0 to 3.6 V,
INO(PWROFF)
VCOM = 3.6 V to 0,
INO(ON)
ICOM(OFF)
VCOM = 0 to 3.6 V,
ICOM(PWROFF)
VNO = 3.6 V to 0,
ICOM(ON)
VNO = Open, VCOM = 1 V,
or
VNO = Open, VCOM = 3 V,
Full
Full
V+
1.3
3V
1.6
2
1.2
3V
1.6
1.8
0.1
0.15
25°C
3V
0.2
0.35
Ω
Ω
0.35
−15
3
15
3.6 V
Full
nA
−30
−1
0V
30
0.2
−10
−15
1
10
3
Full
nA
−40
−15
40
3
15
3.6 V
Full
nA
−75
−1
0V
µA
A
15
3.6 V
Full
Ω
0.2
Full
Full
Ω
0.15
3V
Full
V
75
0.2
−20
−15
1
20
4
µA
A
15
3.6 V
nA
Full
−40
40
Full
2
5.5
V
Full
0
0.8
V
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Input leakage
current
IIH, IIL
25°C
VI = 5.5 V or 0
Full
3.6 V
−2
2
−20
20
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications
of Slow or Floating CMOS Inputs, literature number SCBA004.
5
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SCDS214 – OCTOBER 2005
Electrical Characteristics for 3.3-V Supply(1) (continued)
V+ = 3 V to 3.6 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
16
30.5
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
3.3 V
1
tON
Full
3 V to 3.6 V
1
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
3.3 V
1
tOFF
Full
3 V to 3.6 V
1
Break-beforemake time
VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C
3.3 V
0.5
tBBM
Full
3 V to 3.6 V
0.5
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
25°C
3.3 V
12
pC
Charge injection
QC
34
6
11.5
12.5
13
ns
ns
26
30
ns
NO
OFF
capacitance
CNO(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
18
pF
COM
OFF
capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
55
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
78
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
78
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
3.3 V
2.5
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
3.3 V
73
MHz
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
25°C
3.3 V
−64
dB
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
25°C
3.3 V
−64
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
3.3 V
0.010
%
OFF isolation
Crosstalk
Total harmonic
distortion
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
3.6 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
6
2
20
350
nA
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SCDS214 – OCTOBER 2005
Electrical Characteristics for 2.5-V Supply(1)
V+ = 2.3 V to 2.7 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO
0
Peak ON
resistance
rpeak
0 ≤ (VNO) ≤ V+,
ICOM = −8 mA,
Switch ON,
See Figure 13
25 °C
ON-state
resistance
VNO = 1.8 V,
ICOM = −8 mA,
Switch ON,
See Figure 13
25°C
ron
ON-state
resistance
match
between
channels
∆ron
VNO = 1.8 V,
ICOM = −8 mA,
Switch ON,
See Figure 13
0 ≤ (VNO ) ≤ V+,
ICOM = −8 mA,
Switch ON,
See Figure 13
VNO = 0.8 V, 1.8 V,
ICOM = −8 mA,
Switch ON,
See Figure 13
25°C
VNO = 0.5 V, VCOM = 0.5 V to 2.3 V,
Switch OFF,
or
See Figure 14
VNO = 2.3 V, VCOM = 0.5 V to 2.3 V,
25°C
ON-state
resistance
flatness
NO
OFF leakage
current
NO
ON leakage
current
COM
OFF leakage
current
COM
ON leakage
current
Full
1.8
2.3 V
ron(flat)
INO(OFF)
1.5
2.3 V
INO(ON)
2.4
ICOM(OFF)
25°C
ICOM(ON)
Input logic
high
VIH
Input logic low
VIL
IIH, IIL
VI = 5.5 V or 0
0.6
2.3 V
0.6
1
−15
3
15
nA
−30
−1
0V
30
0.1
−10
−15
1
10
3
nA
−35
Full
−15
35
3
15
2.7 V
Full
25°C
Switch ON,
See Figure 15
25°C
Full
nA
−60
−1
0V
µA
A
15
2.7 V
Switch OFF,
See Figure 14
Ω
1
Full
VNO = 0.3 V to 2.3 V, VCOM = 0.5 V,
Switch OFF,
or
See Figure 14
VNO = 0.3 V to 2.3 V, VCOM = 2.3 V,
Ω
0.2
2.7 V
25°C
Ω
0.2
Full
Full
V
Ω
25°C
Switch ON,
See Figure 15
VCOM = 0 to 2.7 V,
ICOM(PWROFF)
VNO = 2.7 V to 0,
0.15
Full
25°C
VNO = 0.5 V, VCOM = Open,
or
VNO = 2.2 V, VCOM = Open,
2
2.3 V
Switch OFF,
See Figure 14
VNO = 0 to 2.7 V,
INO(PWROFF)
VCOM = 2.7 V to 0,
2.5
2.7
25°C
VNO = Open, VCOM = 0.5 V,
or
VNO = Open V, VCOM = 2.2 V,
Digital Control Inputs (IN1, IN2)(2)
Input leakage
current
Full
V+
60
0.1
−10
−15
1
10
3.5
µA
A
15
2.7 V
nA
Full
−40
40
Full
1.8
5.5
V
Full
0
0.6
V
25°C
1
1
10
10
Full
2.7 V
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications
of Slow or Floating CMOS Inputs, literature number SCBA004.
7
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SCDS214 – OCTOBER 2005
Electrical Characteristics for 2.5-V Supply(1) (continued)
V+ = 2.3 V to 2.7 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
4.5
MAX
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
2.5 V
2
tON
Full
2.3 V to 2.7 V
2
43
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
2.5 V
2
tOFF
Full
2.3 V to 2.7 V
2
Break-beforemake time
VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C
2.5 V
0.5
tBBM
Full
2.3 V to 2.7 V
0.5
CL = 1 nF,
See Figure 22
25°C
2.5 V
8
pC
See Figure 16
25°C
2.5 V
18.5
pF
47.5
8.5
11
12.5
18.5
ns
ns
38.5
43
ns
Charge injection
QC
NO
OFF capacitance
CNO(OFF)
VGEN = 0,
RGEN = 0,
VNO = V+ or GND,
Switch OFF,
COM
OFF capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
55
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
78
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
78
pF
VI = V+ or GND,
See Figure 16
25°C
2.5 V
3
pF
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
2.5 V
73
MHz
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
25°C
2.5 V
−64
dB
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
25°C
2.5 V
−64
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
2.5 V
0.030
%
Digital input
capacitance
Bandwidth
OFF isolation
Crosstalk
Total harmonic
distortion
CI
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
2.7 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
8
1
10
250
nA
W www.ti.com
SCDS214 – OCTOBER 2005
Electrical Characteristics for 1.8-V Supply(1)
V+ = 1.65 V to 1.95 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO
V
Peak ON
resistance
rpeak
0 ≤ (VNO) ≤ V+,
ICOM = −2 mA,
Switch ON,
See Figure 13
25 °C
ON-state
resistance
VNO = 1.5 V,
ICOM = −2 mA,
Switch ON,
See Figure 13
25°C
ron
ON-state
resistance
match
between
channels
∆ron
VNO = 1.5 V,
ICOM = −2 mA,
Switch ON,
See Figure 13
0 ≤ (VNO) ≤ V+,
ICOM = −2 mA,
Switch ON,
See Figure 13
VNO = 0.6 V, 1.5 V,
ICOM = −2 mA,
Switch ON,
See Figure 13
25°C
VNO = 0.3 V, VCOM = 0.3 V to 1.65 V,
or
VNO = 1.65 V, VCOM = 0.3 V to 1.65 V,
Switch OFF,
See Figure 14
25°C
VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
Switch OFF,
See Figure 14
25°C
VNO = 0.3 V, VCOM = Open,
or
VNO = 1.65 V, VCOM = Open,
Switch ON,
See Figure 15
25°C
VNO = 0.3 V to 1.65 V, VCOM = 0.3 V,
or
VNO = 0.3 V to 1.65 V, VCOM = 1.65 V,
Switch OFF,
See Figure 14
25°C
VCOM = 0 to 1.95 V,
VNO = 1.95 V to 0,
Switch OFF,
See Figure 14
25°C
Switch ON,
See Figure 15
25°C
ON-state
resistance
flatness
NO
OFF leakage
current
COM
OFF leakage
current
ron(flat)
INO(OFF)
INO(ON)
ICOM(OFF)
ICOM(PWROFF)
COM
ON leakage
current
VNO = Open, VCOM = 0.3 V,
or
VNO = Open, VCOM = 1.65 V,
Digital Control Inputs (IN1, IN2)(2)
ICOM(ON)
Input logic
high
VIH
Input logic low
VIL
Input leakage
current
Full
5
1.65 V
30
2
1.65 V
IIH, IIL
VI = 5.5 V or 0
2.5
3.5
25°C
INO(PWROFF)
NO
ON leakage
current
Full
0.15
Ω
Full
0.4
25°C
5
1.65 V
4.5
Full
TBD
Ω
TBD
−15
3
15
1.95 V
Full
nA
−30
−1
0V
30
0.1
−15
−15
1
15
3
nA
−30
Full
−15
30
3
15
1.95 V
Full
nA
−50
−1
0V
µA
A
15
1.95 V
Full
Ω
0.4
1.65 V
Full
Ω
50
0.1
−10
−15
1
10
3
µA
A
15
1.95 V
nA
Full
−30
30
Full
1.5
5.5
V
Full
0
0.6
V
25°C
−2
2
20
20
Full
1.95 V
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications
of Slow or Floating CMOS Inputs, literature number SCBA004.
9
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SCDS214 – OCTOBER 2005
Electrical Characteristics for 1.8-V Supply(1) (continued)
V+ = 1.65 V to 1.95 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
38.5
85
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
1.8 V
3
tON
Full
1.65 V to 1.95 V
3
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
1.8 V
2
tOFF
Full
1.65 V to 1.95 V
2
Break-beforemake time
VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C
1.8 V
1
tBBM
Full
1.65 V to 1.95 V
1
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
25°C
1.8 V
5
pC
Charge
injection
90
8.5
16
18
33
ns
ns
75
80
ns
NO
OFF
capacitance
CNO(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
18.5
pF
COM
OFF
capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
55
pF
NO
ON
capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
78
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
78
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
1.8 V
3
pF
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
1.8 V
73
MHz
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
25°C
1.8 V
−64
dB
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
25°C
1.8 V
−64
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
1.8 V
0.080
%
Bandwidth
OFF isolation
Crosstalk
Total harmonic
distortion
Supply
25°C
Positive
I+
VI = V+ or GND,
Switch ON or OFF
1.95 V
supply current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
10
1
200
nA
W www.ti.com
SCDS214 – OCTOBER 2005
TYPICAL PERFORMANCE
1.4
3.5
V+ = 1.8 V
3.0
1.0
2.0
ron (W)
ron (Ω)
2.5
V+ = 2.5 V
1.5
V+ = 3.3 V
0.8
0.6
TA = –405C
0.4
1.0
0.5
VCC = 5 V
0.0
0.0
0.5
0.2
1.0
VCOM (V)
1.5
0.0
0.0
2.0
Figure 1. ron vs VCOM
0.5
1.0
1.5
2.0
VCOM (V)
2.5
3.0
3.5
Figure 2. ron vs VCOM (V+ = 3.3 V)
1.0
60
40
Leakage Current (nA)
TA = 255C
TA = 855C
0.8
ron (W)
TA = 855C
TA = 255C
1.2
0.6
TA = –405C
0.4
0.2
TA = –405C
TA = 255C
20
0
−20
−40
−60
TA = 855C
−80
−100
−120
−140
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
VCOM (V)
250
50
200
40
150
100
TA = –405C
TA = 255C
50
0
−50
4
5
6
Figure 4. Leakage Current vs Temperature
Leakage Current (nA)
Leakage Current (nA)
Figure 3. ron vs VCOM (V+ = 5 V)
3
ICOM(OFF)
TA = 855C
−100
30
20
TA = –405C
TA = 255C
10
0
−10
TA = 855C
−20
−30
−40
−150
−50
0
1
2
3
4
5
INO(OFF)
Figure 5. Leakage Current vs Temperature
6
0
1
2
3
ICOM(ON)
4
5
6
Figure 6. Leakage Current vs Temperature
11
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SCDS214 – OCTOBER 2005
30
VCOM = 5 V
VCOM = 3.3 V
20
4000
3500
Charge Injection (pC)
Leakage Current (nA)
4500
TA = 855C
3000
2500
TA = –405C
2000
1500
TA = 255C
1000
500
0
10
VCOM = 2.5 V
0
−10
−20
VCOM = 1.8 V
−30
−40
−50
−60
−500
0
1
2
3
4
ICOM(PWROFF)
5
6
−70
0
1
2
3
4
5
6
Bias Voltage (V)
Figure 7. Leakage Current vs Temperature
Figure 8. Charge Injection (QC) vs VCOM
90
14
80
tOFF
60
50
tON
40
tON
12
tON/tOFF (ns)
tON/tOFF (ns)
70
30
10
20
8
tOFF
6
4
2
10
0
0
0
1
2
3
4
5
6
−40
25
VCC (V)
85
TA (5C)
Figure 9. tON and tOFF vs Supply Voltage
Figure 10. tON and tOFF vs Temperature
2.5
−2
2.0
−4
1.5
Gain (dB)
Logic-Level Threshold (nA)
0
VIN Rising
VIN Falling
1.0
−8
−10
0.5
−12
0.0
0
1
2
3
V+ (V)
4
5
Figure 11. Logic-Level Threshold vs V+
12
−6
6
−14
0.1
1
10
Frequency (MHz)
100
Figure 12. Bandwidth (V+ = 5 V)
1000
W www.ti.com
SCDS214 – OCTOBER 2005
0.010
0
0.009
0.008
0.007
−40
THD (%)
Gain (dB)
−20
−60
0.006
0.005
0.004
0.003
0.002
−80
0.001
−100
0.1
1
10
Frequency (MHz)
100
1000
0.000
0.01
0.1
1
Frequency (kHz)
10
100
Figure 14. Total Harmonic Distortion
vs Frequency
Figure 13. OFF Isolation vs Crosstalk
180
160
140
I+ (nA)
120
100
80
60
40
20
0
−60
−40
−20
0
20
40
60
80
100
TA (5C)
Figure 15. Power-Supply Current vs Temperature
(V+ = 5 V)
13
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SCDS214 – OCTOBER 2005
PIN DESCRIPTION
PIN
NUMBER
NAME
1
NO0
Digital control pin to connect COM to NO
2
NO1
Normally open
3
NO2
Normally open
4
GND
Digital ground
5
IN2
Digital control pin to connect COM to NO
6
IN1
Digital control pin to connect COM to NO
7
COM
8
V+
DESCRIPTION
Common
Power supply
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNO
Voltage at NO
ron
Resistance between COM and NO ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
∆ron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case
input and output conditions
INO(PWROFF)
Leakage current measured at the NO port during the power-down condition, V+ = 0
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NC) in the OFF state under
worst-case input and output conditions
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, or NO) signal when the switch is turning OFF.
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay
between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO, or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ∆VCOM, CL is the load capacitance, and ∆VCOM is the change in analog output voltage.
14
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W SCDS214 – OCTOBER 2005
PARAMETER DESCRIPTION (continued)
SYMBOL
DESCRIPTION
CNO(OFF)
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CI
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency,
with the corresponding channel (NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC). This
is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is −3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean
square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
15
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SCDS214 – OCTOBER 2005
PARAMETER MEASUREMENT INFORMATION
V+
VNO NO0
COM
+
VCOM
Channel ON
NO1 - NO2
r on +
VI
ICOM
IN
VCOM * VNO
W
ICOM
VI = VIH or VIL
+
GND
Figure 16. ON-State Resistance (ron)
V+
VNO NO0
COM
+
NO1 - NO2
VI
VCOM
+
IN
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
+
GND
Figure 17. OFF-State Leakage Current (INC(OFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF))
V+
VNO NO0
COM
+
NO1 - NO2
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 18. ON-State Leakage Current (ICOM(ON), INO(ON))
16
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SCDS214 – OCTOBER 2005
V+
VNO
Capacitance
Meter
NO0
VBIAS = V+ or GND
NO1 - NO2
VI = V+ or GND
VCOM COM
VBIAS
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
IN
VI
GND
Figure 19. Capacitance (CI, CCOM(ON), CNO(OFF), CCOM(OFF), CNO(ON))
V+
VCOM
NO0
VNO
NO1 - NO2
CL(2)
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
RL
IN
VI
CL(2)
Logic
Input(1)
RL
GND
V+
Logic
Input
(VI)
50%
50%
0
tON
tOFF
Switch
Output
( VNO)
90%
90%
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
Figure 20. Turn-On (tON) and Turn-Off Time (tOFF)
V+
Logic
Input
(VI)
VNO
NO0
VCOM
V+
50%
0
COM
NO1 - NO2
CL(2)
VI
Logic
Input(1)
IN
RL
Switch
Output
(VCOM)
90%
90%
tBBM
GND
VNO = V+
RL = 50 Ω
CL = 35 pF
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
Figure 21. Break-Before-Make Time (tBBM)
17
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SCDS214 – OCTOBER 2005
V+
Network Analyzer
50 W
VNO
NO0
COM
Source
Signal
VCOM
Channel ON: NO0 to
COM
V
I = V+ or GND
NO1 - NO2
Network Analyzer Setup
IN
VI
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 22. Bandwidth (BW)
V+
Network Analyzer
50 W
Channel OFF: NO0 to COM
VNO NO0
VI = V+ or GND
COM
Source
Signal
50 W
VCOM
NO1 - NO2
Network Analyzer Setup
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
VI
50 W
+
GND
DC Bias = 350 mV
Figure 23. OFF Isolation (OISO)
V+
Network Analyzer
50 W
Channel ON: NO0 to COM
VNO
NO0
VCOM
Source
Signal
VI = V+ or GND
NO1 - NO2
50 W
VI
+
Channel OFF: NO0-NO1 to
COM
50 W
IN
Network Analyzer Setup
GND
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
Figure 24. Crosstalk (XTALK)
18
W www.ti.com
SCDS214 – OCTOBER 2005
V+
RGEN
VGEN
Logic
Input
(VI)
VIH
OFF
ON
OFF V
IL
NO0
COM
+
VCOM
∆VCOM
VCOM
NO1 - NO2
CL(2)
VI
VGEN = 0 to V+
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
IN
Logic
Input(1)
GND
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
Figure 25. Charge Injection (QC)
Channel ON: COM to NO0
VSOURCE = V+ P-P
VI = VIH or VIL
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz CL = 50 pF
V+/2
V+
Audio Analyzer
RL
10 mF
Source
Signal
10 mF
NO0
COM
600 W
600 W
600 W
NO1 - NO2
VI
CL(1)
IN
GND
(1) CL includes probe and jig capacitance.
Figure 26. Total Harmonic Distortion (THD)
19
PACKAGE OPTION ADDENDUM
www.ti.com
7-Feb-2006
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TS5A3359DCUR
ACTIVE
US8
DCU
8
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3359DCURE4
ACTIVE
US8
DCU
8
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3359DCUT
ACTIVE
US8
DCU
8
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3359DCUTE4
ACTIVE
US8
DCU
8
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,
enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or service without notice. Customers should obtain the latest relevant information before placing
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