<TRANSISTOR ARRAY> M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION PIN CONFIGURATION M54522FP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. NC Both the semiconductor integrated circuits perform high-current 1 ○ 20 NC IN1→ 2 19 →O1 IN2→ 3 18 →O2 IN3→ 4 17 →O3 IN4→ 5 16 →O4 IN5→ 6 15 →O5 ● High-current driving (Ic(max) = 400mA) IN6→ 7 14 →O6 ● With clamping diodes IN7→ 8 13 →O7 IN8→ 9 12 →O8 driving with extremely low input-current supply. INPUT FEATURES ● High breakdown voltage (BVCEO > 40V) ● Driving available with PMOS IC output GND 11 10 Package type OUTPUT COM COMMON 20P2N-A NC : No connection APPLICATIONS Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between microcomputer output and high-current or high-voltage systems CIRCUIT DIAGRAM COM FUNCTION OUTPUT The M54522FP each have eight circuits consisting of NPN 20K Darlington transistors. This ICs have resistance of 20kΩ INPUT between input transistor bases and input pins. A spike-killer clamping diode is provided between each output 20K pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 10). 2K The collector current is 400mA maximum. Collector-emitter GND supply voltage is 40V maximum. The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol VCEO IC VI IF VR Pd Topr Tstg 2012.May Parameter Collector-emitter voltage Output current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Conditions Output , H Current per circuit output, L Ta = 25℃, when mounted on board 1 Ratings –0.5 ～ +40 400 –0.5 ～ +40 400 40 1.10 –20 ～ +75 –55 ～ +125 Unit V mA V mA V W ℃ ℃ <TRANSISTOR ARRAY> M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol VO Parameter Output voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) IC VIH “H” input voltage VIL “L” input voltage min 0 Limits typ － max 40 0 － 400 0 － 200 8 4 0 － － Duty Cycle no more than 5% Duty Cycle no more than 20% IC < 400mA IC < 200mA Unit V mA 30 V 0.5 V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃） Symbol Parameter V (BR)CEO VCE(sat) Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor II VF IR hFE Test conditions min Limits typ ＊ Unit max V ICEO = 100μA 40 — — VI = 8V, IC = 400mA VI = 4V, IC = 200mA VI = 17V — — 0.3 1.15 0.95 0.85 2.4 1.6 1.8 mA IF = 400mA — 1.5 2.4 V VR = 40V — — 100 μA 1000 8000 — — VCE = 4V, IC = 300mA, Ta = 25℃ V *：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃） Symbol ton toff Parameter Turn-on time Turn-off time Test conditions min — — CL = 15pF（note 1） Limits typ 30 930 Unit max — — ｎｓ ｎｓ TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT VO INPUT RL Measured device 50% 50% OPEN OUTPUT PG 50Ω OUTPUT CL 50% ｔon (1) Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI N= 0 to 8V (2) Input-output conditions : RL = 25Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes 2012.May 2 50% ｔoff <TRANSISTOR ARRAY> M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE TYPICAL CHARACTERISTICS Output Saturation Voltage Thermal Derating Factor Characteristics Collector Current Characteristics 500 2.0 IC(mA) 1.5 Collector current Power dissipation Pd(W) VI=4V 1.0 0.5 0 300 Ta=75℃ 200 Ta=25℃ Ta=-20℃ 100 0 0 25 50 75 Ambient temperature 100 0 Ta(℃) 0.5 1.0 1.5 Collector saturation voltage Duty-Cycle- Collector current Characteristics 2.0 VCE(sat)(V) Duty-Cycle- Collector current Characteristics 500 500 Collector current IC (mA) Collector current IC (mA) 400 ① 400 300 ② ③ ④ ⑤ ⑥ ⑦ ⑧ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25℃ 100 0 0 20 40 60 400 ① 300 ② 200 100 0 80 100 ③ ④ ⑤⑥ ⑦ ⑧ •The collector current values represent the current per circuit. •Repeated frequency ≥10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75℃ 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 7 5 400 VCE=4V VCE=4V Collector current IC (mA) DC amplification factor hFE 10 5 3 2 10 4 7 5 Ta=75℃ 3 2 10 Ta=25℃ 3 7 5 Ta=-20℃ 3 300 Ta=75℃ Ta=25℃ Ta=-20℃ 200 100 2 10 0 2 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 1 2 3 Input voltage VI (V) Collector current IC (mA) 2012.May 0 3 4 <TRANSISTOR ARRAY> M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE Clamping Diode Characteristics Input Characteristics 400 Forward bias current IF (mA) Input current II (mA) 2.0 1.5 Ta=-20℃ 1.0 Ta=25℃ 0.5 0 Ta=75℃ 0 5 10 15 20 200 Ta=25℃ 100 Ta=75℃ 0 25 Input voltage VI (V) 2012.May 300 0 0.5 Ta=-20℃ 1.0 1.5 Forward bias voltage VF (V) 4 2.0 <TRANSISTOR ARRAY> M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE PACKAGE OUTLINE 2012.May 5 <TRANSISTOR ARRAY> M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE Keep safety first in your circuit designs! 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