MITSUBISHI M54563FP

<TRANSISTOR ARRAY>
M54563FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
DESCRIPTION
PIN CONFIGURATION
M54563FP is an eight-circuit output-sourcing darlington
transistor array. The circuits are made of PNP and NPN
NC
transistors. This semiconductor integrated circuit performs high
1
○
NC
20
IN1→ 2
19 →O1
IN2→ 3
18 →O2
IN3→ 4
17 →O3
IN4→ 5
16 →O4
IN5→ 6
15 →O5
● With clamping diodes
IN6→ 7
14 →O6
● Driving available with PMOS IC output of 6 ~ 16V or
IN7→ 8
13 →O7
IN8→ 9
12 →O8
current driving with extremely low input-current supply.
FEATURES
● High breakdown voltage (BVCEO > 50V)
INPUT
● High-current driving (Io(max) = –500mA)
with TTL output
● Output current-sourcing type
Vs
11
10
Package type
APPLICATIONS
OUTPUT
GND
20P2N-A
NC : No connection
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic systems
CIRCUIT DIAGRAM
and relays, solenoids, or small motors.
VS
FUNCTION
20K
The M54563FP each have eight circuits, which are made of
input inverters and current-sourcing outputs.
3K
The outputs are made of PNP transistors and NPN
INPUT
Darlington transistors. The PNP transistor base current is
7.2K
3K
1.5K
constant. A clamping diode is provided between each output
OUTPUT
and GND. VS and GND are used commonly among the eight
GND
circuits.
The inputs have resistance of 3kΩ, and voltage of up to 10V is
The eight circuits share the VS and GND.
applicable. Output current is 500 mA maximum. Supply voltage
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit :Ω
VS is 50V maximum.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO #
VS
VI
IO
IF
#
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output , L
Current per circuit output, H
Ta = 25℃, when mounted on board
# : Unused Input pins must be connected to GND.
2012.May
1
Ratings
–0.5 ~ +50
50
–0.5 ~ +10
– 500
– 500
50
1.10
–20 ~ +75
–55 ~ +125
Unit
V
V
V
mA
mA
V
W
℃
℃
<TRANSISTOR ARRAY>
M54563FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃)
Symbol
Parameter
VS
Supply voltage
Output current (Current per 1
circuit when 8 circuits are
coming on simultaneously)
IO
min
0
Limits
typ
-
max
50
0
-
–350
0
-
–100
Duty Cycle
no more than 5%
Duty Cycle
no more than 30%
Unit
V
mA
VIH
“H” input voltage
2.4
-
10
V
VIL
“L” input voltage
0
-
0.2
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -20~+75℃)
Symbol
Parameter
IS(leak) #
Supply leak current
VCE(sat)
Collector-emitter saturation
voltage
II
Input current
IS
Supply current
Clamping diode forward voltage
Clamping diode reverse current
VF
#
IR
Test conditions
VS = 50V,
VS = 10V,
VS = 10V,
VI = 5V
VI = 25V
VS = 50V,
VI = 0.2V
VI = 2.4V, IO = -350mA
VI = 2.4V, IO = -100mA
VI = 3V (all input)
IF = -350mA
VR = 50V
min
Limits
typ*
max
—
—
—
—
—
—
—
1.6
1.45
0.6
3.0
5.6
100
2.4
2.0
1.0
5.0
15.0
—
-1.35
-2.4
V
100
μA
—
—
Unit
μA
V
mA
mA
*:The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions.
# : Unused Input pins must be connected to GND.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃)
Symbol
ton
toff
Parameter
Test conditions
Turn-on time
Turn-off time
CL = 15pF(note 1)
max
—
—
VS
Measured
device
INPUT
50%
50%
OUTPUT
PG
50Ω
RL
OUTPUT
CL
50%
ton
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10ms, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 0 to 2.4V
(2) Input-output conditions : RL = 30Ω, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
2012.May
Limits
typ
100
4800
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
min
—
—
2
50%
toff
Unit
ns
ns
<TRANSISTOR ARRAY>
M54563FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Thermal Derating Factor Characteristics
Collector Current Characteristics
-500
2.0
Output current IO (mA)
Power dissipation Pd (W)
VS=10V
VI=2.4V
1.5
1.0
0.5
-400
-300
Ta=75℃
-200
Ta=25℃
-100
Ta=-20℃
0
0
25
50
75
Ambient temperature
0
100
0
0.5
1.0
1.5
2.0
2.5
Collector saturation voltage VCE(sat) (V)
Ta(℃)
Duty-Cycle-Output current Characteristics
Duty-Cycle-Output current Characteristics
-500
-500
Output current IO (mA)
Output current IO (mA)
①
-400
-300
②
-200
③
④
⑤
⑦⑥
⑧
•The collector current values
represent the current per circuit.
•Repeated frequency ≥10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25℃
-100
0
0
20
40
60
-400
-300
①
-200
-100
0
80
100
0
20
80
100
500
-500
Forward bias current IF (mA)
VS=20V
VS-VO=4V
Output current IO (mA)
60
Clamping Diode Characteristics
Grounded Emitter Transfer Characteristics
-400
-300
Ta=75℃
-200
Ta=25℃
Ta=-20℃
-100
0
0.2
0.4
0.6
0.8
400
300
200
Ta=25℃
Ta=75℃
Ta=-20℃
100
0
1.0
Input voltage VI (V)
2012.May
40
Duty cycle (%)
Duty cycle (%)
0
②
③
④⑤
⑥⑦
⑧
•The collector current
values represent the
current per circuit.
•Repeated frequency ≥10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75℃
0
0.5
1.0
1.5
Forward bias voltage VF (V)
3
2.0
<TRANSISTOR ARRAY>
M54563FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
Input Characteristics
Input Characteristics
1.0
5
Input current II (mA)
Input current II (mA)
VS=20V
VS=20V
0.8
0.6
0.4
Ta=75℃
Ta=25℃
0.2
4
3
Ta=-20℃
2
Ta=25℃
Ta=75℃
1
Ta=-20℃
0
0
1
2
3
4
0
5
Input voltage VI (V)
2012.May
0
2
4
6
Input voltage VI (V)
4
8
10
<TRANSISTOR ARRAY>
M54563FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
PACKAGE OUTLINE
2012.May
5
<TRANSISTOR ARRAY>
M54563FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
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© 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
2012.May
6