MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW) INPUTS FEATURES High breakdown voltage (BVCEO ≥ 40V) ● High-current driving (Io(max) = –300mA) ● With output clamping diodes ● Active “L” input ● Wide operating temperature range (Ta = –20 to +75°C) ● IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 8 VS 9 OUTPUTS SUB Outline 16P4 CIRCUIT SCHEMATIC APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors VS 27k 20k INPUT FUNCTION The M54561P have seven circuits of current-sourcing outputs. Darlington transistor, which are made of PNP transistor and NPN transistor. Resistance of 20kΩ is connected between PNP transistor base and input pin. PNP transistor emitters and NPN transistor collector is connected V S (pin 8), and spike killer clamping diode is provided between each output pins. Output currene is 300mA maximum and supply voltage VS is 40V maximum operate Active “L” input. 7k 3k OUTPUT SUB* * SUB must be the lowest voltage in a circuit. The seven circuits share the VS and SUB. The diodes shown by broken line are parasite diodes and must not be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol VCEO VS VI Parameter Collector-emitter voltage Supply voltage Input voltage IO IF Output current Clamping diode forward current VR Pd Clamping diode reverse voltage Power dissipation Topr Operating temperature Storage temperature Tstg Conditions Output, L Current per circuit output, H Ta = 25°C, when mounted on board Ratings Unit –0.5 ~ VS V 40 –0.5 ~ VS V V –300 –300 mA mA 40 1.47 V W –20 ~ +75 °C –55 ~ +125 °C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C) Parameter Symbol Limits typ min max Unit VS Supply voltage 0 — 40 Percent duty cycle less Output current than 10% per channel Percent duty cycle less than 50% 0 — –300 IO 0 — –100 — VS+0.3 V — V S–3 V VIH VIL 0 ELECTRICAL CHARACTERISTICS Symbol mA VS–0.2 “H” input voltage “L” input voltage V (Unless otherwise noted, Ta = –20 ~ +75°C) min Limits typ+ max VS = 40V VI = VS–3V, I O = –300mA — — — 1.65 100 2.4 VI = VS–3V, I O = –100mA VI = VS–3.5V, — — 1.45 –150 2.0 –250 µA IF = –300mA VR = 40V — — –1.6 — –2.4 100 V µA 1000 8000 — — Parameter Test conditions IS (leak) Supply leak current VCE (sat) Collector-emitter saturation voltage II VF Input current Clamping diode forward voltage IR h FE Clamping diode reverse current DC amplification factor VCE = 4V, I O = –300mA, Ta =25°C Unit µA V + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter ton Turn-on time toff Turn-off time Test conditions CL = 15pF (note 1) NOTE 1 TEST CIRCUIT INPUT Limits typ max — 200 — ns — 2500 — ns min Unit TIMING DIAGRAM VS INPUT 50% 50% Measured device OPEN OUTPUT PG 50Ω RL CL 50% 50% OUTPUT ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VIN = 7 to 10.3V (2) Input-output conditions : RL = 40Ω, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Output Current Characteristics Thermal Derating Factor Characteristics –400 VS = 10V VI = 7V Output current IO (mA) Power dissipation Pd (W) 2.0 1.5 1.0 0.5 0 0 25 50 75 –100 0 0.5 1.5 2.0 Output saturation voltage VCE (sat) (V) Duty-Cycle-Output Current Characteristics Duty-Cycle-Output Current Characteristics –400 3 –200 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C –100 0 20 40 60 80 4 5 6 7 Output current IO (mA) 1, 2 –300 0 –300 1 –200 2 –100 0 100 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 0 20 Duty cycle (%) 40 60 80 3 4 5 6 7 100 Duty cycle (%) DC Amplification Factor output Current Characteristics Grounded Emitter Transfer Characteristics 104 –400 7 5 3 103 7 5 VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C 3 102 1 –10 –3 –5 –7–102 –3 –5 –7–103 Output current IO (mA) Output current IO (mA) DC amplification factor hFE 1.0 Ambient temperature Ta (°C) –400 Output current IO (mA) –200 0 100 Ta = 75°C Ta = 25°C Ta = –20°C –300 VS = 20V VCE = 4V –300 Ta = 75°C Ta = 25°C Ta = –20°C –200 –100 0 0 0.5 1.0 1.5 2.0 VS-Input Voltage VS-VI (V) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics Clamping Diode Characteristics 400 –2.0 Ta = 75°C Ta = 25°C Ta = –20°C –1.5 Forward bias current IF (mA) Input corrent II (mA) VS = 20V –1.0 –0.5 0 0 5 10 15 VS-Input voltage VS-VI (V) 20 Ta = 75°C Ta = 25°C Ta = –20°C 300 200 100 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug. 1999