MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION INPUT FEATURES ● Medium breakdown voltage (BV CEO ≥ 30V) ● Output sink current (IC(max) = 30mA) ● Driving available with MOS (PMOS, CMOS) IC output ● Low output saturation voltage (VCE(sat) = 0.35V at IC = 20mA) ● Wide operating temperature range (Ta = –20 to +75°C) IN1→ 1 16 → O1 IN2→ 2 15 → O2 IN3→ 3 14 → O3 IN4→ 4 13 → O4 IN5→ 5 12 → O5 IN6→ 6 11 → O6 IN7→ 7 10 → O7 GND 8 9 OUTPUT VCC Package type 16P4(P) CIRCUIT DIAGRAM APPLICATION Driving of digit drives of indication elements (LEDs and lamps) 10k VCC 23k OUTPUT INPUT 100k 22k GND FUNCTION The M54577P has seven circuits consisting of NPN transistor. This I C uses a predriver stage with a diode and 23kΩ resistor in series to input. The output transistor emitters are all connected to the GND pin (pin 8), and VCC is connected to pin 9. The collector current are capable of sinking 30mA maximum. Collector-emitter supply voltage is 30V maximum. Collector-emitter saturation voltage is below 0.35V (I C = 20mA) Drives active “H” input. ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI Pd Topr Tstg Parameter The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –20 ~ +75 °C) Conditions Supply voltage Collector-emitter voltage Collector current Output, H Current per circuit output, L Input voltage Power dissipation Ta = 25°C, when mounted on board Ratings 13 Unit V –0.5 ~ +30 30 V mA –20 ~ V CC V Operating temperature 1.47 –20 ~ +75 Storage temperature –55 ~ +125 W °C °C Jan.2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 300mA TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol VCC (Unless otherwise noted, Ta = –20 ~ +75°C) Limits Parameter Supply voltage Collector current (Current per 1 circuit) IC VIH “H” input voltage VIL “L” input voltage min typ max 4.5 0 5 10 13 20 3 0 — — VCC 1 Unit V mA V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE(sat) II ICC h FE Limits Test conditions ICEO = 100µA VCC = 4.5V, VI = 3V, IC = 10mA Collector-emitter saturation voltage VCC = 6V, V I = 3V, I C = 20mA Input current VCC = 4.5V, VI = 3V VCC = 4.5V, VI = 3V Supply current VCC = 13V, VI = 3V (Only one time operation) VCE = 4V, VCC = 4.5V, I C = 20mA, Ta = 25°C DC amplification factor min 30 — typ* — — max — 0.25 — 30 — — 500 — — 0.4 1.3 1200 0.35 90 0.9 2.3 — Unit V V µA mA — * : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) Symbol Parameter ton Turn-on time toff Turn-off time Test conditions CL = 15pF (note 1) VCC Limits typ Unit max — 210 — ns — 3200 — ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT min Vo 50% 50% INPUT Measured device RL OUTPUT PG 50Ω CL OUTPUT 50% 50% ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VP = 3VP-P (2)Input-output conditions : RL = 500Ω, Vo = 10V, VCC = 6V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan.2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 300mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS DC Amplification Factor Collector Current Characteristics Thermal Derating Factor Characteristics 104 DC amplification factor hFE Power dissipation Pd (W) 2.0 1.5 1.0 0.5 0 0 25 50 75 7 5 VCC = 4.5V VCE = 4V Ta Ta ==75°C 75°C Ta Ta ==25°C 25°C Ta Ta ==–20°C –20°C 3 103 7 5 3 102 0 10 100 Ambient temperature Ta (°C) 3 5 7 102 Grounded Emitter Transfer Characteristics 40 40 30 20 VI = 3.0V VCC = 4.5V Ta ==75°C Ta 75°C Ta ==25°C Ta 25°C Ta ==–20°C Ta –20°C 10 0 0.02 0.04 0.06 0.08 Output saturation voltage VCE(sat) (V) Collector current Ic (mA) Collector current Ic (mA) 5 7 101 Collector current Ic (mA) Output Saturation Voltage Collector Current Characteristics 0 3 VCC = 4.5V VCE = 4V Ta== 75°C 75°C Ta Ta== 25°C 25°C Ta Ta== –20°C –20°C Ta 30 20 10 0 0 1 2 3 4 Input voltage VI (V) Jan.2000