MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63836FP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63836FP/KP 8-channel sinkdriver, consists of 8 PNP and 16 NPN transistors connected to from eight high current gain driver pairs. PIN CONFIGURATION FEATURES ● High breakdown voltage (BV CEO ≥ 50V) ● High-current driving (IC(max) = 500mA) ● 3V micro computer compatible input ● “L” active level input ● With input diode ● With clamping diodes ● Wide operating temperature range (Ta = –40 to +85°C) NC 1 20 COM COMMON IN1 2 19 O1 IN2 3 18 O2 IN3 4 17 O3 IN4 5 16 O4 IN5 6 15 O5 IN6 7 14 O6 IN7 8 13 O7 IN8 9 12 O8 GND 10 11 VCC INPUT OUTPUT NC : No connection 20P2N-A(FP) Package type 20P2E-A(KP) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. CIRCUIT DIAGRAM VCC FUNCTION The M63836FP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5kΩ is connected between the input and the base of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of current from the input to the Vcc. without this diode, the current flows from “H” input to the Vcc and the “L” input circuit is activated, in such a case where one of the inputs of the 8 circuit is “H” and the other are “L” to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI IF VR Pd Topr Tstg COM INPUT OUTPUT 3.5K 1.05K 7.2K 3K GND The eight circuits share the Vcc, COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –40 ~ +85°C) Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature 20K Conditions Output, H Current per circuit output, L Ta = 25°C, when mounted on board Ratings 7 –0.5 ~ +50 500 –0.5 ~ VCC 500 50 Unit V 1.10(FP)/0.68(KP) –40 ~ +85 –55 ~ +125 W V mA V mA V °C °C Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63836FP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VCC (Unless otherwise noted, Ta = –40 ~ +85°C) Limits Parameter min 2.7 typ max 3.0 3.6 Duty Cycle FP : no more than 4% KP : no more than 2% 0 — 400 Duty Cycle FP : no more than 15% KP : no more than 6% 0 Supply voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) IC VIH VIL Unit V mA VCC-0.5 “H” input voltage “L” input voltage 0 — 200 — — VCC-2.2 VCC V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol V (BR) CEO VCE(sat) Parameter Limits Test conditions min 50 — — — — — — 2000 Collector-emitter breakdown voltage ICEO = 100µA VCC = 2.7V, VI = 0.5V, IC = 400mA Collector-emitter saturation voltage VCC = 2.7V, VI = 0.5V, IC = 200mA Input current VI = VCC-2.2V Clamping diode forward volltage IF = 400mA Clamping diode reverse current VR = 50V Supply current (AN only Input) VCC = 3.6V, VI = 0.5V DC amplification factor VCC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C II VF IR ICC hFE ✽ : Typical values are at Ta = 25°C SWITCHING CHARACTERISTICS Symbol ton V V µA V µA mA — Limits Test conditions CL = 15pF (note 1) min — typ 120 max — — 4500 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Unit max — 2.4 1.6 –600 2.4 100 4.0 — (Unless otherwise noted, Ta = 25°C) Parameter Turn-on time Turn-off time toff typ ✽ — 1.15 0.93 –220 1.4 0.1 2.6 10000 VCC VO INPUT 50% Measured device 50% RL OPEN OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30Ω, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63836FP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 Vcc=2.7V VI=0.5V Collector current Ic (mA) Power dissipation Pd(max) (W) 2.0 1.5 M63836FP 1.10 1.0 M63836KP 0.68 0.572 0.5 0.354 0 0 25 75 85 50 400 300 200 Ta= 25°C 100 0 100 Ta= –20°C Ta= 85°C 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (°C) Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63836FP) Duty Cycle-Collector Characteristics (M63836GFP) 500 500 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 25°C 100 0 Collector current Ic (mA) 2 0 20 40 60 80 3 4 5 6 7 8 Collector current Ic (mA) 300 400 300 40 60 80 Duty Cycle-Collector Characteristics (M63836KP) Duty Cycle-Collector Characteristics (M63836KP) 400 1 300 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 25°C 0 20 Duty cycle (%) 400 0 0 Duty cycle (%) 500 20 40 60 Duty cycle (%) 80 3 4 5 6 7 8 100 4 5 6 7 8 100 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneouslyoperated circuit. •Vcc = 3V •Ta = 85°C 300 1 200 2 3 4 5 6 7 8 100 0 2 3 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 85°C 100 500 100 1 200 0 100 Collector current Ic (mA) Collector current Ic (mA) 1 400 0 20 40 60 80 100 Duty cycle (%) Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63836FP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics Output Current Characteristics 500 7 5 3 2 VCE=2V VCE=2V Collector current IC (mA) DC amplification factor hFE 105 Ta=85°C 104 7 5 3 2 Ta=–40°C 103 7 5 3 2 Ta=25°C 102 1 10 2 5 7 102 3 2 3 400 300 Ta=25°C 200 Ta=–40°C 100 0 5 7 103 Ta=85°C 0 0.8 1.2 1.6 Collector current IC (mA) Input voltage Vcc-VI (V) Input Characteristics Driver Supply Characteristics 2.0 20.0 –0.6 VI=0.5V VCC=3V Supply Current Icc (mA) –0.5 Input Current II (mA) 0.4 –0.4 –0.3 Ta=85°C –0.2 Ta=25°C –0.1 16.0 12.0 Ta=25°C Ta=–40°C 8.0 4.0 Ta=85°C Ta=–40°C 0 0 1 2 3 0 0 2 4 6 8 10 Supply voltage Vcc (V) Input voltage Vcc-VI (V) Clamping Diode Characteristics Forward bias current IF (mA) 500 400 300 200 Ta=25°C 100 0 Ta=–40°C Ta=85°C 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Sep. 2001