MITSUBISHI MGFS38E2325-01

Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Outline Drawing
DESCRIPTION
MGFS38E2325 is a GaAs RF amplifier designed
for WiMAX CPE.
DIM in mm
1.0
4.0
•
•
•
•
•
•
•
•
InGaP HBT Device
5V Operation
28.5dBm Linear Output Power (64QAM, EVM=2.5%)
36dB Linear Gain
Integrated Output Power Detector
Integrated 1-bit Step Attenuator
Surface Mount Package
RoHS Compliant Package
4.0
FEATURES
10
9
8
7
6
4
5
1
2
3
4
5
6
7
8
9
10
APPLICATIONS
IEEE802.16-2004
IEEE802.16e-2005
GND
1
2
3
Pin
Vc1, Vcb
Vc2
Vc3
Vc4
Pout
Vdet
GND
Vref
Vcont
X-ray Top View
FUNCTIONAL BLOCK DIAGRAM
Gain control
Pout
Pin
Vcont
(0V/3.3V)
Power
Detector
Vc1,Vcb
(5V)
Bias Circuit
Vdet
Detector Circuit
Vc2(5V) Vref(2.85V)
Vc3(5V) Vc4(5V)
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORPORATION
(1/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vc1,Vc2,Vc3,
Vc4,Vcb
Vref
Vcont
Ic1+Icb
Ic2
Ic3
Ic4
Pin
Tc(op)
Tstg
-
Conditions
Value
Collector Supply Voltage
-
Min.
-
Reference Voltage
ATT Control Voltage
-
-
Operation Current
-
Input Power
Operation Temperature
Storage Temperature
Duty Cycle
Pout28.5dBm
-
-40
-40
-
Max.
8
3
3.5
100
100
300
1000
3
+85
+125
50
Unit
V
V
V
mA
mA
mA
mA
dBm
C
C
%
*NOTE : Ta=25C unless otherwise noted, Zin=Zout=50
Each maximum rating is guaranteed independently.
Please take care that MGFS38E2325 is operated under these conditions at the worst
case on your terminal.
ELECTRICAL CHARACTERISTICS
Value
Symbol
Parameter
Test Conditions
Unit
Min
f
Frequency
Gp
Gain
EVM
EVM
Vdet
Typ
2300
Power Detector Voltage
Vc1=Vc2=Vc3=Vc4=5V,
Vref=2.85V, Vcont=0V
Pout=28.5dBm
64QAM OFDM Modulation
Duty Cycle <= 50%
Max
2500
MHz
36.0
dB
2.5
%
1.5
V
ATT
Control Gain Step
25
dB
Ict
Operating Current
950
mA
*NOTE : Ta=25C unless otherwise noted, Zin=Zout=50
**ATT=Gain(@Vcont=0V)－Gain(@Vcont=3.3V)
MOISTURE SENSITIVITY LEVEL : LEVEL3
MITSUBISHI ELECTRIC CORPORATION
(2/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
PERFORMANCE DATA (WiMAX OFDM 64QAM signal input)
Vc=5V, Vref=2.85V, Vcont=0V, Duty Cycle=50%, Ta=25deg.C
Gain vs. Output Power
Operating Current vs. Output Power
44
1200
42
1000
40
800
36
34
2.3GHz
2.4GHz
2.5GHz
32
30
Ict (mA)
Gain (dB)
38
600
2.3GHz
2.4GHz
2.5GHz
400
28
200
26
0
24
20
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
EVM vs. Output Power
21
22
23
24
25
26
27
28
29
30
31
32
Output Power(dBm)
Detector Voltage vs. Output Power
3.0
10.0
9.0
2.5
2.3GHz
2.4GHz
2.5GHz
8.0
7.0
2.0
Vdet (V)
6.0
EVM (%)
2.3GHz
2.4GHz
2.5GHz
5.0
1.5
4.0
1.0
3.0
2.0
0.5
1.0
0.0
0.0
20 21 22 23 24 25 26 27 28 29 30
Output Power(dBm)
20
31 32
21
22
23
24
25
26
27
28
29
30
31
32
Output Power(dBm)
ACP Characteristics
-15
2.3GHz
2.4GHz
2.5GHz
-25
-30
-35
-20
ACP @11.5MHz (dBm)
ACP @10.5MHz (dBm)
-20
-15
-25
2.3GHz
2.4GHz
2.5GHz
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
-45
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(3/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Attenuation Performance
40
35
30
Gain(dB)
25
Vcont=0V
Vcont=3.3V
20
15
10
5
0
2.0
2.2
2.4
2.6
2.8
3.0
freq.(GHz)
MITSUBISHI ELECTRIC CORPORATION
(4/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Vc=5V, Vref=2.85V, Vcont=0V, Duty Cycle=50%, f=2.3GHz
Gain vs. Output Power
Operating Current vs. Output Power
44
1200
42
1000
40
800
36
Ict (mA)
Gain (dB)
38
34
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
32
30
28
26
400
200
24
0
20 21 22 23 24 25 26 27 28 29 30 31 32
20
Output Power(dBm)
21
22
23
24
25
26
27
28
29
30
31
32
29
30
31
32
Output Power(dBm)
EVM vs. Output Power
Detector Voltage vs. Output Power
3.0
10
9
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
7
6
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
2.5
2.0
Vdet (V)
8
EVM (%)
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
600
5
4
1.5
1.0
3
2
0.5
1
0.0
0
20
21
22
23
24 25 26 27 28
Output Power(dBm)
29
30
31
20
32
21
22
23
24
25
26
27
28
Output Power(dBm)
ACP Characteristics
[email protected] (dBm)
-20
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-15
-20
[email protected] (dBm)
-15
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(5/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Vc=5V, Vref=2.85V, Vcont=0V, Duty Cycle=50%, f=2.4GHz
Gain vs. Output Power
Operating Current vs. Output Power
1200
44
42
1000
40
38
800
Ict (mA)
Gain (dB)
36
34
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
32
30
28
26
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
600
400
200
24
0
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21
22 23 24
Output Power(dBm)
EVM vs. Output Power
28 29 30
31 32
Detector Voltage vs. Output Power
3.0
10.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
8.0
7.0
6.0
5.0
4.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
2.5
2.0
Vdet (V)
9.0
EVM (%)
25 26 27
Output Power(dBm)
1.5
1.0
3.0
0.5
2.0
1.0
0.0
0.0
20
20 21 22 23 24 25 26 27 28 29 30 31 32
21
22
23
24
25
26
27
28
29
30
31
32
Output Power(dBm)
Output Power(dBm)
ACP Characteristics
-15
-25
-30
-35
-20
[email protected] (dBm)
[email protected] (dBm)
-20
-15
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(6/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Vc=5V, Vref=2.85V, Vcont=0V, Duty Cycle=50%, f=2.5GHz
Gain vs. Output Power
Operating Current vs. Output Power
1200
44
42
1000
40
800
36
Ict (mA)
Gain (dB)
38
34
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
32
30
28
600
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
400
200
26
24
0
20 21 22 23 24 25 26 27 28 29 30 31 32
20
21
22
23
24
Output Power(dBm)
EVM vs. Output Power
26
27
28
29
30
31
32
30
31
32
Detector Voltage vs. Output Power
3.0
10.0
9.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
7.0
6.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
2.5
2.0
Vdet (V)
8.0
EVM (%)
25
Output Power(dBm)
5.0
4.0
1.5
1.0
3.0
0.5
2.0
1.0
0.0
0.0
20 21
22 23
24 25 26 27 28 29 30
Output Power(dBm)
20
31 32
21
22
23
24
25
26
27
28
29
Output Power(dBm)
ACP Characteristics
[email protected] (dBm)
-20
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-15
-20
[email protected] (dBm)
-15
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(7/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
PERFORMANCE DATA (WiMAX OFDM 64QAM signal input)
Vc=5V, Vref=2.8V, Vcont=0V, Duty Cycle=50%, Ta=25deg.C
Gain vs. Output Power
Operating Current vs. Output Power
40
1200
39
1000
38
37
Ict (mA)
Gain (dB)
800
36
35
2.3GHz
2.4GHz
2.5GHz
34
33
600
2.3GHz
2.4GHz
2.5GHz
400
32
200
31
30
0
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
EVM vs. Output Power
20
22
23
24
25
26
27
28
29
30
31
32
Output Power(dBm)
Detector Voltage vs. Output Power
3.0
6.0
2.5
5.0
2.3GHz
2.4GHz
2.5GHz
2.3GHz
2.4GHz
2.5GHz
2.0
Vdet (V)
4.0
EVM (%)
21
3.0
1.5
2.0
1.0
1.0
0.5
0.0
0.0
20
21
22
23
24 25 26 27 28
Output Power(dBm)
29 30
31
20 21 22 23 24 25 26 27 28 29 30 31 32
32
Output Power(dBm)
ACP Characteristics
-15
-15
2.3GHz
2.4GHz
2.5GHz
-25
-30
-35
-20
ACP @11.5MHz (dBm)
ACP @10.5MHz (dBm)
-20
-25
2.3GHz
2.4GHz
2.5GHz
-30
-35
-40
-40
-45
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(8/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Vc=5V, Vref=2.8V, Vcont=0V, Duty Cycle=50%, f=2.3GHz
Gain vs. Output Power
Operating Current vs. Output Power
1200
44
42
1000
40
800
36
Ict (mA)
Gain (dB)
38
34
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
32
30
28
26
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
600
400
200
24
0
20 21 22 23 24 25 26 27 28 29 30 31 32
20
21
22
23
24
Output Power(dBm)
EVM vs. Output Power
26
27
28
29
30
31
32
29
30
31
32
Detector Voltage vs. Output Power
3.0
10.0
9.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
7.0
6.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
2.5
2.0
Vdet (V)
8.0
EVM (%)
25
Output Power(dBm)
5.0
4.0
1.5
1.0
3.0
2.0
0.5
1.0
0.0
0.0
20 21 22 23 24 25 26 27 28 29 30
Output Power(dBm)
20
31 32
21
22
23
24
25
26
27
28
Output Power(dBm)
ACP Characteristics
-15
-15
-25
-30
-35
-20
[email protected] (dBm)
[email protected] (dBm)
-20
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(9/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Vc=5V, Vref=2.8V, Vcont=0V, Duty Cycle=50%, f=2.4GHz
Gain vs. Output Power
Operating Current vs. Output Power
1200
44
42
1000
40
800
36
Ict (mA)
Gain (dB)
38
34
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
32
30
28
600
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
400
200
26
24
0
20 21 22 23 24 25 26 27 28 29 30 31 32
20
21
22
23
24
Output Power(dBm)
EVM vs. Output Power
26
27
28
29
30
31
32
30
31
32
Detector Voltage vs. Output Power
3.0
10.0
9.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
7.0
6.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
2.5
2.0
Vdet (V)
8.0
EVM (%)
25
Output Power(dBm)
5.0
4.0
1.5
1.0
3.0
0.5
2.0
1.0
0.0
0.0
20
21 22 23
24 25 26 27 28 29
Output Power(dBm)
30
31
20
32
21
22
23
24
25
26
27
28
29
Output Power(dBm)
ACP Characteristics
-15
-15
-25
-20
[email protected] (dBm)
[email protected] (dBm)
-20
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(10/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Vc=5V, Vref=2.8V, Vcont=0V, Duty Cycle=50%, f=2.5GHz
Gain vs. Output Power
Operating Current vs. Output Power
44
1200
42
1000
40
800
36
Ict (mA)
Gain (dB)
38
34
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
32
30
28
26
600
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
400
200
24
0
20 21 22 23 24 25 26 27 28 29 30 31 32
20
21
22
23
24
Output Power(dBm)
EVM vs. Output Power
26
27
28
29
30
31
32
29
30
31
32
Detector Voltage vs. Output Power
3.0
10.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
8.0
7.0
6.0
5.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
2.5
2.0
Vdet (V)
9.0
EVM (%)
25
Output Power(dBm)
1.5
4.0
1.0
3.0
2.0
0.5
1.0
0.0
0.0
20
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
21
22
23
24
25
26
27
28
Output Power(dBm)
ACP Characteristics
-15
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-20
[email protected] (dBm)
[email protected] (dBm)
-20
-15
-30
-35
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(11/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
PERFORMANCE DATA (WiMAX OFDM 64QAM signal input)
Vc=5V, Vref=2.9V, Vcont=0V, Duty Cycle=50%, Ta=25deg.C
Gain vs. Output Power
Operating Current vs. Output Power
1200
40
39
1000
38
800
36
35
Ict (mA)
Gain (dB)
37
2.3GHz
2.4GHz
2.5GHz
34
600
2.3GHz
2.4GHz
2.5GHz
400
33
32
200
31
0
30
20
21
22 23
24 25 26 27 28
Output Power(dBm)
29
30 31
20
32
22
23
24
25
26
27
28
29
30
31
32
Output Power(dBm)
EVM vs. Output Power
Detector Voltage vs. Output Power
3.0
6.0
2.5
5.0
2.3GHz
2.4GHz
2.5GHz
2.3GHz
2.4GHz
2.5GHz
2.0
Vdet (V)
4.0
EVM (%)
21
3.0
1.5
1.0
2.0
0.5
1.0
0.0
0.0
20
21
22
23 24 25 26 27 28 29
Output Power(dBm)
30
20 21 22 23 24 25 26 27 28 29 30 31 32
31 32
Output Power(dBm)
ACP Characteristics
-15
-15
2.3GHz
2.4GHz
2.5GHz
-25
-30
-35
-20
ACP @11.5MHz (dBm)
ACP @10.5MHz (dBm)
-20
-25
2.3GHz
2.4GHz
2.5GHz
-30
-35
-40
-45
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(12/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Vc=5V, Vref=2.9V, Vcont=0V, Duty Cycle=50%, f=2.3GHz
Gain vs. Output Power
Operating Current vs. Output Power
1200
44
42
1000
40
800
36
Ict (mA)
Gain (dB)
38
34
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
32
30
28
26
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
600
400
200
24
0
20 21 22 23 24 25 26 27 28 29 30 31 32
20
21
22
23
24
Output Power(dBm)
EVM vs. Output Power
26
27
28
29
30
31
32
29
30
31
32
Detector Voltage vs. Output Power
3.0
10.0
9.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
7.0
6.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
2.5
2.0
Vdet (V)
8.0
EVM (%)
25
Output Power(dBm)
5.0
4.0
1.5
1.0
3.0
2.0
0.5
1.0
0.0
0.0
20 21 22 23 24 25 26 27 28 29 30
Output Power(dBm)
20
31 32
21
22
23
24
25
26
27
28
Output Power(dBm)
ACP Characteristics
-15
-15
-25
-30
-35
-20
[email protected] (dBm)
[email protected] (dBm)
-20
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(13/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Vc=5V, Vref=2.9V, Vcont=0V, Duty Cycle=50%, f=2.4GHz
Gain vs. Output Power
Operating Current vs. Output Power
44
1200
42
1000
40
800
36
Ict (mA)
Gain (dB)
38
34
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
32
30
28
26
400
200
24
0
20 21 22 23 24 25 26 27 28 29 30 31 32
20
Output Power(dBm)
21
22
23
24
25
26
27
28
29
30
31
32
31
32
Output Power(dBm)
EVM vs. Output Power
Detector Voltage vs. Output Power
3.0
10.0
9.0
6.0
2.0
Vdet (V)
7.0
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
2.5
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
8.0
EVM (%)
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
600
5.0
4.0
1.5
1.0
3.0
0.5
2.0
1.0
0.0
0.0
20
21 22 23
24 25 26 27 28 29
Output Power(dBm)
20
30 31 32
21
22
23
24
25
26
27
28
29
30
Output Power(dBm)
ACP Characteristics
-15
-25
-30
-35
-15
-20
[email protected] (dBm)
[email protected] (dBm)
-20
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(14/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
Vc=5V, Vref=2.9V, Vcont=0V, Duty Cycle=50%, f=2.5GHz
Gain vs. Output Power
Operating Current vs. Output Power
1200
44
42
1000
40
800
36
Ict (mA)
Gain (dB)
38
34
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
32
30
28
26
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
600
400
200
24
0
20 21 22 23 24 25 26 27 28 29 30 31 32
20
21
22
23
24
Output Power(dBm)
EVM vs. Output Power
3.0
7.0
EVM (%)
6.0
27
28
29
30
31
32
5.0
4.0
30
31
32
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
2.5
2.0
Vdet (V)
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
8.0
26
Detector Voltage vs. Output Power
10.0
9.0
25
Output Power(dBm)
1.5
1.0
3.0
2.0
0.5
1.0
0.0
0.0
20
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
21
22
23
24
25
26
27
28
29
Output Power(dBm)
ACP Characteristics
-15
-15
-25
-30
-35
-20
[email protected] (dBm)
[email protected] (dBm)
-20
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-25
-40deg.C
-30deg.C
0deg.C
25deg.C
60deg.C
85deg.C
-30
-35
-40
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(15/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
EXAMPLE LAYOUT OF EVALUATION BOARD
(40mm X 40mm, t=0.2mm(RF), Er=4.2, FR-4)
Vref(2.85V) Vdet
Vcont(0/3.3V)
C3
C2
C1
R1
RF IN
RF OUT
Q1
C7
C6
C4
C5
C8
C9
C10
C11
Vc1
Vcb
Vc(5V)
ITEM
Q1
C1, C2, C3
C4, C5, C6, C7
C8, C9, C10, C11
R1
DESCRIPTION
MGFS38E2325
1nF, 1005
22 nF, 1005
47 uF, 3225
160K, 1005
NOTE
4mmX4mm
Murata, GRM155B11H102K
Murata, GRM155B11C223K
Murata, GRM31CB30J476K
Taiyosha, RPC03T164J
MITSUBISHI ELECTRIC CORPORATION
(16/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
APPLICATION CIRCUIT EXAMPLE
50ohms
RF Input
47uF
Supply
Voltage
Pin
22nF
C8
C4
C9
C5
C10
C6
C11
C7
C1,C2,C3
:1000pF
C4,C5,C6,C7:22nF
C8,C9,C10,C11:47uF
Vc1,Vcb
Vcont
Vref
Vc2
GND
Vc3
Vdet
Vc4
Pout
1000pF
Attenuator
Control
C2
1000pF
Reference
Voltage
R1
TRL2
TRL1
C1
160k
ohms
50ohms
Detector
Out
C3 Voltage
1000pF
RF Output
TRL1: Z=54 Ohms E=8.3deg. f=2.5GHz
TRL2: Z=65 Ohms E=16.6deg. f=2.5GHz
Put C1, C2, C4, C5, and C6 as close as possible to the device.
Put C3 as close as possible to R1.
NOTE:
<Layout>
A properly designed PC board is essential to any RF/microwave circuit. Be sure to use controlled impedance lines on all
high-frequency inputs and outputs. A ground plane should be present on both the top and bottom of the PC board and
plated-through via holes connecting the top and bottom ground planes should be distributed. GND pins and ground paddle of
the package should be connected to the bottom ground plane with plated-through via holes close to the package. To improve
the heat resistance, place as many plated-through via holes as possible under the ground paddle (See page. 6).
<Bias circuit>
Each Vc node on the board should have its own decoupling capacitor to minimize supply coupling from one section of the
MMIC to another. A bypass capacitor with low ESR at the RF frequency of operation is located close to the package to reject
the RF noise.
MITSUBISHI ELECTRIC CORPORATION
(17/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
PACKAGE OUTLINE
3.8
3.65
3.4
1.7
1.0
4.0
3.4
4.0
2.55
0.3
0.4
0.3
0.4
Top View
Side View
Bottom View
PACKAGE PIN ASSIGN
10
9
8
7
6
4
5
GND
1
2
3
1
2
3
4
5
6
7
8
9
10
Pin
Vc1, Vcb
Vc2
Vc3
Vc4
Pout
Vdet
GND
Vref
Vcont
X-ray Top View
Mitsubishi Electric Corp. reserves the right to make changes to the product and its related material at any time
without notice.
Pin
Function
1
Pin
2
Vc1,Vcb
3
Vc2
4
Vc3
5
Vc4
6
Pout
7
Vdet
8
9
GND
Vref
10
Vcont
Description
This is a RF input terminal.
This is a collector voltage of the 1st stage and the supply voltage for base bias circuits.(5V)
This is a collector voltage of the 2nd stage. (5V)
This is a collector voltage of the 3rd stage. (5V)
This is a collector voltage of the 4th stage. (5V)
This is a RF output pin.
This is an output port of the detector sampled at the output of the 3rd stage, and do not apply
voltage. If you don’t use the detector function, this pin should be connected to nothing.
This pin is internally grounded inside the package and it is recommended to ground it.
This is a reference voltage and power up/down control pin. DC duty cycle is controlled with this
pin.(2.85V/0V)
This is a control voltage for attenuator. (0V/3.3V)
MITSUBISHI ELECTRIC CORPORATION
(18/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
EXAMPLE METAL LAND PATTERN
Note:
UNIT : mm
Through holes with 200um diameter should be put with a distance of 500um among them.
It is recommended that they have metallization of 25um thick on the inside wall.
MITSUBISHI ELECTRIC CORPORATION
(19/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
RECOMMENDED PULSE CONDITION
5V
Vc
2.85V
Duty Cycle <50%
Vref
0V
some delay time
Input Signal
off
time
•
•
•
This figure shows the timing chart between Vref and input signal.
Only while the reference voltage is 2.85V, the device transmits the input signal (*1).
Because the device needs appropriate set-up time before signal amplification, please note that there is some delay
time (e.g. about the rise time of Vref) between the rise edge of Vref and that of the input signal.
•
We recommend the device operate with less than 50% duty cycle of a 5msec period in order to ensure specified
reliability.
*1: In case the device is operated under the Vref conditions of more than 50% duty cycle, self-heating will cause
reliability problem, thereby degrading both power gain and EVM performance unexpectedly.
TEST SET-UP
Power Meter
Oscilloscope
Coupler
Vcont
DUT
•
Attenuator
Coupler
Power Meter
Vref
Vcc
DC Power Supply
•
•
Attenuator
Vdet
Attenuator
Vector Signal
Generator
Vector Signal Analyzer
Pulse Power Supply
Oscilloscope
Calibrate power meters at input/output ports on the EVB.
Apply DC voltage to Vc (Vcb, Vc1~Vc4) and Vcont, where pulsed power supply should be applied to Vref for pulsed
operation. .
Monitor DC output voltage from Vdet using an oscilloscope or a multimeter.
<Power up sequence>
GND->Vc->Vref->Vcont
(1)Apply 5V to Vc, where stepping up from 0 to 5V is preferable.
(2)Supply pulsed voltage between 0 and 2.85V for Vref.
Please check the voltage level of Vref close to EVB and the timing chart between
Vref and input signal using an oscilloscope. Also please do not apply supply
voltage exceeding 3V(absolute maximum rating) to the Vref terminal.
(3)Supply Vcont with 3.3V for the attenuation mode. In the thru-mode, apply 0V to Vcont
or keep it open.
<Power off sequence>
Vcont->Vref->Vc->GND
The reverse procedure is recommended for bias off.
MITSUBISHI ELECTRIC CORPORATION
(20/21)
Rev. 1.1
Sep. -2010
Mitsubishi Semiconductors
MGFS38E2325-01
2.3 - 2.5GHz HBT MMIC MODULE
Specifications are subject to change without notice.
HANDLING PRECAUTION
1) Work desk, test equipment, soldering iron and worker should be grounded before mounting
and testing. Please note that electric discharge of GaAs (InGaP) HBT is much more sensitive than
that of Si transistor. Handling without ground possibly damages GaAs HBT.
2) The surface of a board on which this product is mounted should be as flat and clean as possible
to prevent a substrate from cracking by bending this product.
3) IR reflow soldering condition is confirmed following profile (Max. two times). The PA surface temperatures are
shown in the profile.
Peak 245deg.C
240deg.C
217deg.C
 30 sec
60～150 sec
 3deg.C/sec.
150～200 deg .C
60～120sec
 6deg.C/sec.
4) Handling precaution at high temperature
In case of heating this product, please keep the same heat profile as recommended reflow one.
Please note that crack, flaw or modification may be generated if softened epoxy resin part is handled
with tweezers and etc at high temperature.
5) Cleaning condition
Please select after confirming administrative guidance, legal restrictions, and the mass of the residual
ion contaminant etc., and use it.
6) After soldering, please remove the flux. Please take care that solvent does not penetrate into this
product.
7) GaAs HBT contains As (Arsenic). This product should be dumped as particular industrial waste.
MITSUBISHI ELECTRIC CORPORATION
(21/21)
Rev. 1.1
Sep. -2010