Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 2 3 APPLICATION +0.05 R1.6+/-0.15 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. 0.1 -0.01 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. RD100HHF1-101 9.6+/-0.3 High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 50 +/-20 176.5 12.5 25 175 -40 to +175 0.85 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS VTH Pout ηD Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=30MHz ,VDD=12.5V Pin=7W, Idq=1.0A VDD=15.2V,Po=100W(Pin Control) f=30MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.5 4.5 100 110 55 60 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD100HHF1 17 Aug 2010 1/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD100HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE Ta=+25°C Vds=10V 160 8 120 6 Ids(A) CHANNEL DISSIPATION Pch(W) ... 200 Vgs-Ids CHARACTERISTICS 10 80 4 2 40 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 1 2 3 4 Vgs(V) 5 6 7 Vds VS. Ciss CHARACTERISTICS 10 300 Vgs=6V Ta=+25°C 8 250 Vgs=5.7V Ta=+25°C f=1MHz Ids(A) 6 Ciss(pF) 200 Vgs=5.4V 4 Vgs=5.1V 150 100 Vgs=4.8V 2 50 Vgs=4.5V Vgs=4.2V 0 0 0 2 4 6 Vds(V) 8 0 10 20 30 Vds(V) Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS 40 500 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 400 30 300 Crss(pF) Coss(pF) 10 200 20 10 100 0 0 0 10 20 0 30 10 20 30 Vds(V) Vds(V) RD100HHF1 17 Aug 2010 2/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD100HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 60 Gp 20 40 10 0 0 10 20 30 Pin(dBm) 0 0 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Idd 40 20 0 4 6 8 10 Vdd(V) 12 40 30 20 2 4 6 Pin(W) 8 10 Vgs-Ids CHARACTERISTICS 2 +25°C Po 60 Ta=25°C f=30MHz Vdd=12.5V Idq=1A 10 Vds=10V Tc=-25~+75°C 8 Ids(A) 80 Idd 0 40 Idd(A) Po(W) 100 50 40 20 140 120 60 60 Vdd-Po CHARACTERISTICS Ta=25°C f=30MHz Pin=7W Idq=1A Zg=ZI=50 ohm ηd 80 20 Ｉｄｄ 70 Po ηd(%) 80 ηｄ 30 80 100 Pout(W) , Idd(A) 40 100 Po ηd(%) Po(dBm) , Gp(dB) , Idd(A) 120 Ta=+25°C f=30MHz Vdd=12.5V Idq=1A 50 Pin-Po CHARACTERISTICS 6 4 +75°C 2 -25°C 0 0 14 RD100HHF1 1 2 3 4 Vgs(V) 5 6 7 17 Aug 2010 3/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD100HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W TEST CIRCUIT(f=30MHz) Vgg Vdd 330uF,50V C1 L2 C1 9.1K OHM 10uF,50V 220pF 180/200pF 20pF 4.7K OHM C1 82/82pF C1 82/330/82pF L1 L3 Pin Pout 1000pF 4.7 OHM 1000pF L4 180pF 82pF 220pF 20pF 200pF 82/330/82pF 82pF 4.5 19 30 18 21 24 68 75 90 93 43 50 53 56 100 93 100 12 8 C1:100pF, 0.022uF, 0.1uF in parallel 14 L1:8Turns,I.D8mm,D1.6mm silver plateted copper wire Dimensions:mm L2:10Turns,I.D8mm,D1.6mm silver plateted copper wire Note:Board material-teflon substrate L3:5Turns,I.D6mm,D0.7mm copper wire P=1mm L4:1Turns,I.D10mm,D1.6mm silver plateted copper wire micro strip line width=4.2mm / 50 OHM,er:2.7,t=1.6mm RD100HHF1 17 Aug 2010 4/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=10Ω f=30MHz Zout f=30MHz Zin Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 30 8.86-j14.31 0.64-j0.01 Po=115W, Vdd=12.5V,Pin=7W RD100HHF1 17 Aug 2010 5/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.835 0.839 0.849 0.886 0.915 0.932 0.945 0.951 0.958 0.960 0.964 0.966 0.970 0.967 0.971 0.970 0.969 0.970 0.976 0.973 0.973 0.977 (ang) -158.6 -171.1 -172.9 -173.9 -175.1 -176.4 -177.3 -178.2 -179.3 -179.8 179.5 178.7 178.2 177.5 177.0 176.5 175.6 175.2 174.5 173.9 173.2 172.6 S21 (mag) (ang) 31.451 94.8 10.628 79.3 6.212 71.0 2.749 54.1 1.541 40.2 0.972 31.6 0.671 24.5 0.481 20.1 0.365 15.2 0.291 13.4 0.243 8.5 0.195 6.8 0.154 5.2 0.133 4.8 0.119 1.0 0.109 -1.3 0.092 0.6 0.080 -4.0 0.073 -1.9 0.067 -5.4 0.058 4.1 0.049 -8.7 RD100HHF1 S12 (mag) 0.014 0.014 0.012 0.012 0.009 0.007 0.006 0.005 0.003 0.003 0.004 0.003 0.004 0.005 0.003 0.006 0.007 0.005 0.007 0.008 0.008 0.011 S22 (ang) 5.2 -9.9 -20.7 -34.1 -27.8 -36.9 -54.4 -30.4 13.1 -18.0 45.3 42.3 78.6 80.1 72.0 61.3 67.2 82.2 78.7 69.9 86.8 78.7 (mag) 0.770 0.764 0.786 0.842 0.880 0.908 0.946 0.941 0.952 0.974 0.963 0.971 0.975 0.965 0.972 0.973 0.964 0.974 0.969 0.973 0.973 0.971 (ang) -162.1 -171.6 -171.4 -171.4 -173.6 -174.3 -176.2 -177.4 -178.3 -179.8 179.6 178.6 177.5 176.8 176.0 175.1 174.9 173.9 173.3 172.6 171.5 171.7 17 Aug 2010 6/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD100HHF1 17 Aug 2010 7/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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RD100HHF1 17 Aug 2010 8/8