Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W (a) DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 0.65+/-0.2 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz INDEX MARK [Gate] •High Efficiency: 50%min. (520MHz) •Integrated gate protection diode 4.2+/-0.2 (d) 5.6+/-0.2 6.2+/-0.2 (3.6) 8.0+/-0.2 2.6+/-0.2 0.95+/-0.2 (c) TOP VIEW SIDE VIEW BOTTOM VIEW 0.7+/-0.1 1.8+/-0.1 DETAIL A Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source For output stage of high power amplifiers in UHF band mobile radio sets. SIDE VIEW RoHS COMPLIANT Standoff = max 0.05 APPLICATION UNIT:mm DETAIL A NOTES: 1. ( ) Typical value RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS ID Pin Pch Tj Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Drain Current Input Power Channel dissipation Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Zg=Zl=50Ω Tc=25°C Junction to case RATINGS 40 -5 to +10 4.0 1.6 83 150 -40 to +125 1.5 UNIT V V A W W D G °C °C °C/W S SCHEMATIC DRAWING Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency VSWRT Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz , VDD=7.2V Pin=0.8W,Idq=1.0A VDD=9.5V,Po=8W(Pin Control) f=520MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 0.5 8 50 LIMITS TYP MAX. 10 1 2.5 9 No destroy UNIT uA uA V W % - Note: Above parameters, ratings, limits and conditions are subject to change. RD09MUP2 17 Aug 2010 1/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE CHANNEL DISSIPATION Pch(W) ,,, 60 Vgs-Ids CHARACTERISTICS 8 Ta=+25°C Vds=10V *PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm) Thermal sheet: GELTEC COOH-4000(t=0.5mm) 50 Ids 6 30 Ids(A),GM(S) 40 On PCB with Termal sheet and Heat-sink (Size : 41 x 55mm, t=7.2 mm) 20 4 GM 2 Free Air 10 0 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(deg:C.) 200 0 Vds-Ids CHARACTERISTICS Ta=+25°C 3 4 160 Vgs=4.5V 8 Ta=+25°C f=1MHz 140 7 120 Ciss(pF) Vgs=4.0V 6 Ids(A) 2 Vgs(V) Vds VS. Ciss CHARACTERISTICS 9 5 Vgs=3.5V 4 3 Vgs=3.0V 100 80 60 2 40 1 20 0 0 0 1 2 3 4 5 Vds(V) 6 7 8 9 0 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 20 160 Ta=+25°C f=1MHz 140 Ta=+25°C f=1MHz 18 16 120 14 100 Crss(pF) Coss(pF) 1 80 60 12 10 8 6 40 4 20 2 0 0 0 5 10 Vds(V) 15 0 20 RD09MUP2 5 10 Vds(V) 15 20 17 Aug 2010 2/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=520MHz 20 Ta=+25°C f=520MHz Vdd=7.2V Idq=1.0A 80 Po 15 30 ηｄ 20 40 Gp 10 Pout(W) , Idd(A) 60 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 40 80 Ta=25°C f=520MHz Vdd=7.2V Idq=1.0A 70 ηd 60 10 40 30 5 20 50 Po 20 Idd Ｉｄｄ 10 0 0 0 0 5 10 15 20 Pin(dBm) ηd(%) Pin-Po CHARACTERISTICS @f=520MHz 25 30 0.0 35 0.5 1.0 Pin(W) 1.5 0 2.0 Vdd-Po CHARACTERISTICS @f=520MHz 20 10 Po(W) 15 Po 8 10 5 Idd 5 Idd(A) Ta=25°C f=520MHz Pin=1.0W Idq=1.0A Zg=ZI=50 ohm 3 0 0 4 6 8 Vdd(V) 10 12 RD09MUP2 17 Aug 2010 3/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W TEST CIRCUIT (f=520MHz) Vgg Vdd C1 C2 19mm W W 19mm RD09MUP2 520MHz L 5pF 4.7K Ohm RF-in 13mm 14.5mm 3.5mm RF-out 6mm 3mm 330pF 5pF 22uF,50V 47pF 33pF 5mm 21mm 7mm 330pF 5pF Note:Board material= glass-Epoxy Substrate L:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter) Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm C1,C2:2200pF W:Line width=1.0mm RD09MUP2 17 Aug 2010 4/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA) Freq. [MHz] 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760 780 800 820 840 860 880 900 920 940 960 980 1000 S11 (mag) 0.900 0.901 0.905 0.908 0.909 0.912 0.916 0.918 0.922 0.923 0.928 0.930 0.933 0.936 0.937 0.939 0.939 0.945 0.947 0.950 0.952 0.950 0.952 0.953 0.953 0.956 0.957 0.961 0.957 0.961 0.962 0.960 0.962 0.963 0.963 0.964 0.962 0.964 0.965 0.965 0.962 0.967 0.963 0.964 0.966 0.964 S21 (ang) -175.7 -176.4 -176.7 -177.2 -177.5 -177.6 -178.0 -178.5 -178.7 -178.9 -179.0 -179.1 -179.3 -179.6 179.9 179.7 179.3 179.1 178.9 178.8 178.7 178.3 178.1 177.6 177.2 177.0 177.0 176.9 176.8 176.5 176.2 176.0 175.5 175.3 175.2 175.0 175.0 174.7 174.5 174.1 173.8 173.5 173.5 173.2 173.1 173.0 (mag) 4.425 3.651 3.056 2.614 2.273 2.003 1.787 1.602 1.442 1.297 1.176 1.075 0.989 0.910 0.841 0.775 0.718 0.667 0.622 0.582 0.548 0.513 0.480 0.455 0.427 0.402 0.383 0.362 0.344 0.326 0.311 0.298 0.283 0.269 0.259 0.247 0.237 0.230 0.220 0.211 0.202 0.193 0.189 0.180 0.176 0.170 S12 (ang) 75.0 71.1 67.4 64.2 61.4 58.7 55.9 53.3 50.6 48.0 45.8 44.1 42.3 40.0 37.9 36.3 34.7 33.4 32.1 30.7 29.2 28.0 26.8 25.7 24.4 23.7 23.2 22.1 21.3 20.4 19.5 19.0 18.6 17.5 17.2 16.9 16.5 15.8 16.2 15.4 15.1 15.0 14.4 13.8 14.6 14.0 RD09MUP2 (mag) 0.016 0.014 0.014 0.013 0.013 0.011 0.011 0.010 0.010 0.009 0.008 0.008 0.008 0.008 0.007 0.008 0.008 0.008 0.009 0.009 0.010 0.011 0.012 0.012 0.012 0.014 0.014 0.015 0.015 0.016 0.017 0.018 0.019 0.019 0.020 0.021 0.022 0.022 0.023 0.024 0.025 0.026 0.026 0.027 0.028 0.029 S22 (ang) -7.1 -8.2 -10.4 -10.9 -10.0 -8.4 -6.0 -4.1 -5.6 0.6 2.6 8.2 15.1 25.3 27.2 35.5 40.1 45.0 51.3 56.2 56.9 59.9 64.2 67.0 66.6 68.9 70.7 70.9 72.1 72.0 74.3 74.2 74.5 74.9 74.1 72.8 75.4 75.1 76.0 75.8 75.0 75.8 75.8 75.6 76.0 76.5 (mag) 0.798 0.804 0.808 0.812 0.819 0.830 0.842 0.851 0.857 0.859 0.863 0.866 0.878 0.889 0.895 0.897 0.899 0.900 0.906 0.913 0.919 0.921 0.924 0.925 0.924 0.928 0.933 0.937 0.939 0.936 0.937 0.937 0.938 0.943 0.944 0.949 0.946 0.946 0.944 0.948 0.949 0.952 0.952 0.949 0.951 0.952 (ang) -173.9 -174.4 -174.9 -175.1 -175.2 -175.1 -175.3 -175.3 -175.8 -176.1 -176.3 -176.8 -177.1 -177.4 -177.8 -178.1 -178.6 -178.8 -179.3 -179.5 179.8 179.6 179.0 178.8 178.6 178.2 177.7 177.3 177.0 176.7 176.4 176.1 175.8 175.5 175.0 174.7 174.7 174.5 174.1 173.8 173.4 172.8 172.7 172.7 172.6 172.2 17 Aug 2010 5/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760 780 800 820 840 860 880 900 920 940 960 980 1000 S11 (mag) 0.914 0.918 0.920 0.922 0.921 0.921 0.922 0.925 0.924 0.928 0.929 0.936 0.935 0.936 0.937 0.937 0.939 0.941 0.944 0.946 0.948 0.950 0.949 0.948 0.950 0.952 0.954 0.958 0.954 0.957 0.956 0.955 0.956 0.959 0.958 0.959 0.962 0.962 0.961 0.960 0.961 0.961 0.960 0.962 0.962 0.960 S21 (ang) -176.9 -177.4 -178.0 -178.3 -178.6 -178.8 -179.3 -179.4 -179.8 180.0 -180.0 180.0 179.8 179.4 179.0 178.9 178.5 178.5 178.3 178.1 178.0 177.9 177.5 177.1 177.0 176.6 176.5 176.5 176.4 176.3 176.0 175.5 175.2 174.9 175.0 174.8 174.8 174.5 174.3 174.0 173.6 173.3 173.3 173.1 172.9 172.8 (mag) 4.363 3.638 3.060 2.614 2.287 2.039 1.840 1.665 1.503 1.364 1.240 1.144 1.064 0.993 0.923 0.851 0.795 0.738 0.696 0.654 0.619 0.585 0.549 0.518 0.491 0.467 0.444 0.426 0.400 0.382 0.367 0.350 0.334 0.319 0.308 0.293 0.281 0.271 0.261 0.252 0.244 0.233 0.225 0.219 0.211 0.206 S12 (ang) 78.5 74.9 71.4 68.8 66.7 64.6 62.1 59.6 56.8 54.7 52.9 51.1 49.4 47.2 45.2 43.5 41.7 40.4 39.3 38.0 36.5 34.8 33.5 32.2 31.1 30.3 29.5 28.5 27.2 26.3 25.6 24.9 23.9 23.4 22.3 22.0 21.5 21.0 20.4 20.0 19.5 18.9 18.5 18.2 17.5 18.0 RD09MUP2 (mag) 0.012 0.012 0.011 0.011 0.011 0.010 0.010 0.010 0.009 0.009 0.009 0.009 0.009 0.009 0.009 0.009 0.009 0.009 0.010 0.011 0.011 0.012 0.012 0.014 0.014 0.014 0.015 0.016 0.017 0.017 0.018 0.019 0.019 0.020 0.021 0.021 0.022 0.023 0.023 0.025 0.025 0.026 0.027 0.027 0.029 0.029 S22 (ang) 0.2 -0.6 0.3 1.6 4.4 6.5 8.5 8.0 10.9 13.1 18.6 26.6 27.8 32.4 34.4 40.1 47.0 52.8 50.3 56.9 59.5 62.7 63.1 63.6 65.6 66.3 67.6 69.8 69.8 70.8 71.9 72.4 72.5 73.0 72.7 74.0 73.9 74.2 74.1 73.9 74.6 74.4 74.7 74.7 74.3 74.4 (mag) 0.825 0.833 0.832 0.829 0.833 0.846 0.863 0.870 0.868 0.864 0.860 0.866 0.879 0.891 0.896 0.896 0.895 0.892 0.898 0.908 0.912 0.914 0.915 0.916 0.918 0.919 0.924 0.930 0.932 0.929 0.929 0.931 0.930 0.934 0.939 0.944 0.939 0.938 0.939 0.940 0.942 0.944 0.945 0.945 0.948 0.948 (ang) -175.5 -176.2 -177.1 -177.3 -177.4 -177.2 -177.4 -177.5 -177.9 -178.2 -178.1 -178.4 -178.8 -179.0 -179.4 -179.7 -179.8 -180.0 179.6 179.3 178.8 178.4 178.1 178.0 177.8 177.6 177.0 176.4 176.3 176.0 175.9 175.8 175.3 174.8 174.5 174.3 174.1 174.0 173.9 173.4 173.0 172.5 172.3 172.3 172.4 172.0 17 Aug 2010 6/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD09MUP2 17 Aug 2010 7/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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