< Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz 3.6+/-0.2 2 9+/-0.4 12.3+/-0.6 -tions. 4.8MAX designed for VHF/UHF High power amplifiers applica 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 High Efficiency: 60%typ. on VHF Band 0.5+0.10/-0.15 High Efficiency: 55%typ. on UHF Band APPLICATION 3.1+/-0.6 5deg 9.5MAX 4.5+/-0.5 2.5 2.5 PINS 1:GATE 2:SOURCE 3:DRAIN note: Torelance of no designation means typical value. Dimension in mm. For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD15HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) Publication Date : Oct．2011 1 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 48 W Pin Input power Zg=Zl=50 1.5(Note2) W ID Drain current - 4 A Tch Channel temperature - 150 °C Tstg Storage temperature - -40 to +150 °C Rth j-c Thermal resistance 2.6 °C/W junction to case Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 6W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Tc=25°C , UNLESS OTHERWISE NOTED) CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 100 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold Voltage VDS=12V, IDS=1mA 1.5 2.0 2.5 V Output power VDD=12.5V, Pin=0.6W, 15 18 - W Drain efficiency f=175MHz,Idq=0.5A 55 60 - % Output power VDD=12.5V, Pin=3W, 15 18 - W Drain efficiency f=520MHz,Idq=0.5A 50 55 - % Load VSWR tolerance VDD=15.2V,Po=15W(PinControl) Pout1 D1 Pout2 D2 No destroy - No destroy - f=175MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) Load VSWR tolerance VDD=15.2V,Po=15W(PinControl) f=520MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) Note : Above parameters , ratings , limits and conditions are subject to change. Publication Date : Oct．2011 2 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 10 CHANNEL DISSIPATION Pch(W) 100 8 60 6 Ids(A) 80 40 Ta=+25°C Vds=10V 4 2 20 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 8 10 80 8 Vgs=10V Vgs=9V Vgs=8V Vgs=7V 6 Vgs=6V 4 Vgs=5V Ta=+25°C f=1MHz 60 Ciss(pF) Ta=+25°C Ids(A) 4 6 Vgs(V) Vds VS. Ciss CHARACTERISTICS 10 Vgs=3V 0 0 0 2 4 6 Vds(V) 8 40 20 Vgs=4V 2 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 100 10 Ta=+25°C f=1MHz 80 60 40 6 4 20 2 0 0 0 5 Ta=+25°C f=1MHz 8 Crss(pF) Coss(pF) 2 10 Vds(V) 15 0 20 Publication Date : Oct．2011 3 5 10 Vds(V) 15 20 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 100 100 Po 80 30 60 ηｄ Gp 20 Pout(W) , Idd(A) 40 25 Po 80 ηd 15 60 20 40 10 10 20 5 0 0 0.0 40 Ta=25°C f=175MHz Vdd=12.5V Idq=0.5A ηd(%) Ta=+25°C f=175MHz Vdd=12.5V Idq=0.5A ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 Pin-Po CHARACTERISTICS 20 Idd Ｉｄｄ 0 0 10 20 Pin(dBm) 30 40 1.5 Pin-Po CHARACTERISTICS 100 25 80 20 100 Po 80 60 20 40 ηｄ Gp 10 15 60 Po Ta=25°C f=520MHz Vdd=12.5V Idq=0.5A 10 20 5 0 0 40 ηd(%) 30 Pout(W) , Idd(A) ηd ηd(%) Po(dBm) , Gp(dB) , Idd(A) Ta=+25°C f=520MHz Vdd=12.5V Idq=0.5A 1.0 Pin(W) Pin-Po CHARACTERISTICS 50 0 0.5 20 Idd Ｉｄｄ 0 10 20 Pin(dBm) 30 40 0 0 Vdd-Po CHARACTERISTICS 5 4 20 3 15 Idd 10 2 5 0 6 8 10 Vdd(V) 12 Po(W) Po 15 4 3 Pin(W) 4 5 6 25 Idd(A) Po(W) 20 2 Vdd-Po CHARACTERISTICS 25 Ta=25°C f=175MHz Pin=0.6W Idq=0.5A Zg=ZI=50 ohm 1 5 Ta=25°C f=520MHz Pin=3W Idq=0.5A Zg=ZI=50 ohm 4 Po 3 Idd 10 2 1 5 1 0 0 14 0 4 Publication Date : Oct．2011 4 6 8 10 Vdd(V) 12 14 Idd(A) 0 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 2 10 Vds=10V Tc=-25~+75°C Ids(A) 8 -25°C +25°C 6 +75°C 4 2 0 0 2 4 6 Vgs(V) 8 10 TEST CIRCUIT(f=175MHz) Vdd Vgg C1 9.1kOHM C3 L3 8.2kOHM 100OHM C2 175MHz RD15HVF1 L1 RF-IN L2 RF-OUT 56pF 82pF 56pF 25pF 25pF 10pF 25pF 25pF 7 25pF 25pF 25pF 7 22 12 40 42 45 62 73 74 92 95 100 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel 100 Note:Board material PTFE substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire Publication Date : Oct．2011 5 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TEST CIRCUIT(f=520MHz) Vdd Vgg C1 C3 9.1kOHM L3 100OHM 8.2kOHM 15pF 10pF L1 C2 520MHz RD15HVF1 RF-IN L2 RF-OUT 56pF 56pF 5pF 12pF 7 7 90 90 100 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel 100 Note:Board material PTFE substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire Publication Date : Oct．2011 6 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=175MHz Zout Zo=50ohm f=175MHz Zin Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 175 2.34-j8.01 3.06+j0.74 Po=15W, Vdd=12.5V,Pin=0.6W 520 5.42+j9.22 6.02+j12.34 Po=15W, Vdd=12.5V,Pin=3.0W Publication Date : Oct．2011 7 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W RD15HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 50 100 150 175 200 250 300 350 400 450 500 520 550 800 850 900 950 1000 1050 S11 (mag) 0.717 0.726 0.744 0.748 0.755 0.770 0.787 0.804 0.821 0.838 0.849 0.854 0.862 0.900 0.904 0.909 0.910 0.910 0.911 S21 (ang) -145.9 -163.9 -171.1 -173.6 -175.9 -179.0 177.6 174.6 171.2 168.2 165.1 163.7 161.7 145.0 141.3 137.9 134.6 131.2 127.5 (mag) 23.274 12.054 8.049 6.804 5.886 4.622 3.731 3.092 2.623 2.229 1.938 1.845 1.695 0.971 0.864 0.790 0.738 0.662 0.612 S12 (ang) 101.8 85.7 74.7 70.2 66.3 58.6 51.5 45.3 39.1 33.2 28.3 26.1 22.9 4.2 0.0 -1.4 -4.4 -6.8 -8.4 Publication Date : Oct．2011 8 (mag) 0.023 0.024 0.025 0.025 0.026 0.030 0.036 0.044 0.053 0.062 0.072 0.076 0.082 0.135 0.143 0.153 0.163 0.170 0.178 S22 (ang) 26.0 27.7 36.1 41.8 48.1 57.7 65.3 70.3 73.5 74.6 73.9 73.9 72.6 62.8 59.6 57.8 54.8 51.4 49.4 (mag) 0.556 0.547 0.560 0.571 0.588 0.625 0.647 0.683 0.716 0.734 0.765 0.777 0.788 0.859 0.870 0.877 0.880 0.886 0.892 (ang) -130.2 -150.4 -157.8 -160.1 -161.8 -164.3 -167.5 -170.9 -173.7 -176.8 179.4 178.0 176.3 159.0 155.7 152.4 149.0 145.7 142.1 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 9 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 10